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2N4232晶体管资料
2N4232别名：2N4232三极管、2N4232晶体管、2N4232晶体三极管
2N4232生产厂家：美国、法国费兰第有限公司
2N4232制作材料：Si-NPN
2N4232性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2N4232封装形式：直插封装
2N4232极限工作电压：70V
2N4232最大电流允许值：3A
2N4232最大工作频率：>4MHZ
2N4232引脚数：2
2N4232最大耗散功率：35W
2N4232放大倍数：
2N4232图片代号：E-44
2N4232vtest：70
2N4232htest：4000100
- 2N4232atest：3
2N4232wtest：35
2N4232代换 2N4232用什么型号代替：BD241A,BD243B,BD537,BD539B,BD599,BD609,2N305A,3DD30A,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N4232 | Power Transistors Power Transistors TO-66 Case | Central |   | |
2N4232 | Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
2N4232 | 包装：散装 描述：POWER BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Microchip 微芯科技 | | |
2N4232 | Trans GP BJT NPN 60V 3A 3-Pin(2+Tab) TO-66 Sleeve | NJS | | |
2N4232 | Bipolar Junction Transistors | TTELEC | | |
2N4232 | Bipolar NPN Device in a Hermetically sealed TO66 Metal Package 文件：11.91 Kbytes Page：1 Pages | SEME-LAB Seme LAB | | |
POWER TRANSISTORS(5A,75W) COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0. | MOSPEC 统懋 | | ||
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0. | boca 博卡 | | ||
Bipolar NPN Device in a Hermetically sealed TO66 Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. Bipolar NPN Device. VCEO = 60V IC = 5A | SEME-LAB Seme LAB | | ||
Power Transistors Power Transistors TO-66 Case | Central | | ||
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Excellent Safe Operating Area • Low Collector-Emitter Saturation Voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS • Designed for general-purpose power amplifier and switching applications | ISC 无锡固电 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS 文件：344.67 Kbytes Page：2 Pages | Central | | ||
包装：散装 描述：PNP TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Microchip 微芯科技 | | ||
Bipolar Junction Transistors | TTELEC | |
2N4232产品属性
- 类型
描述
- 型号
2N4232
- 制造商
Motorola
- 功能描述
2N4232 MOT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
N/A |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
MOT |
25+23+ |
38327 |
绝对原装正品全新进口深圳现货 |
||||
ASI |
QQ咨询 |
TO-02 |
226 |
全新原装 研究所指定供货商 |
|||
8836 |
3 |
公司优势库存 热卖中! |
|||||
NES |
新 |
15 |
全新原装 货期两周 |
||||
24+ |
TO-66 |
10000 |
全新 |
||||
ASI |
24+ |
TO-02 |
1500 |
AI芯片,车规MCU原装现货/为新能源汽车电子行业采购保驾护航 |
|||
TI |
BGA |
6850 |
莱克讯每片来自原厂原盒原包装假一罚十价优 |
||||
N/A |
24+/25+ |
37 |
原装正品现货库存价优 |
||||
ASI |
24+ |
TO-02 |
200 |
进口原装正品优势供应 |
2N4232规格书下载地址
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DdatasheetPDF页码索引
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