P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

DUAL MONOLITHIC MATCHED NPN SILICON

GENERAL DESCRIPTION Dual monolithic matched NPN silicon planar transistors used for differential applications.

SPRINGFIELD, NEW JERSEY 07081

Thyristors

SCR, V(DRM) = 600V TO 699.9V

Thyristors

5-A SILICON CONTROLLED RECTIFIERS

5-A Silicon Controlled Rectifiers For Low-Cost Power-Control and Power-Switching Applications Features ■ High di/dt and dv/dt capabilities ■ Low leakage currents, both forward and reverse ■ Low forward voltage drop at high current levels ■ Low thermal resistance

SPRINGFIELD, NEW JERSEY 07081

Thyristors

SCR, V(DRM) = 600V TO 699.9V

Thyristors

SILICON CONTROLLED RECTIFIER 16AMPS 220 THRU 800 VOLTS JEDEC TO-3 CASE

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isc Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • Low Collector-Emitter Saturation Voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS • Designed for general-purpose switching and amplifier applications

isc Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • Low Collector-Emitter Saturation Voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS • Designed for general-purpose switching and amplifier applications

N-Channel Silicon Junction Field-Effect Transistor

General Information

N-Channel JFET General Purpose Amplifier

FEATURES • Low Leakage • Low Capacitance

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

N-Channel Silicon Junction Field-Effect Transistor

N-Channel Silicon Junction Field-Effect Transistor ● Audio Amplifiers ● Ultra-High Input Impedance Amplifiers

N-Channel Silicon Junction Field-Effect Transistor

N-Channel Silicon Junction Field-Effect Transistor ● Audio Amplifiers ● Ultra-High Input Impedance Amplifiers

an Ultra-High Input Impedance N-Channel JFET

The LS4117A is an Ultra-High Input Impedance N-Channel JFET The LS4117A provides ultra-high input impedance. The device is specified with a 1-pA limit and typically operates at 0.2 pA. The part is ideal for use as a high impedance sensitivefront-end amplifier. LS4117A Benefits: ƒ Ins

N-Channel JFET General Purpose Amplifier

FEATURES • Low Leakage • Low Capacitance

N-Channel JFETs

DESCRIPTION The 2N/PN/SST4117A series of n-channel JFETs provide ultra-high input impedance. These devices are specified with a 1-pA limit and typically operate at 0.2 pA. This makes them perfect choices for use as high-impedance sensitive front-end amplifiers. FEATURES ● Ultra-Low Leakag

N-Channel JFET General Purpose Amplifier

FEATURES • Low Leakage • Low Capacitance

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

N-Channel Silicon Junction Field-Effect Transistor

N-Channel Silicon Junction Field-Effect Transistor ● Audio Amplifiers ● Ultra-High Input Impedance Amplifiers

N-Channel Silicon Junction Field-Effect Transistor

N-Channel Silicon Junction Field-Effect Transistor ● Audio Amplifiers ● Ultra-High Input Impedance Amplifiers

N-Channel JFETs

DESCRIPTION The 2N/PN/SST4117A series of n-channel JFETs provide ultra-high input impedance. These devices are specified with a 1-pA limit and typically operate at 0.2 pA. This makes them perfect choices for use as high-impedance sensitive front-end amplifiers. FEATURES ● Ultra-Low Leakag

N-Channel JFET General Purpose Amplifier

FEATURES • Low Leakage • Low Capacitance

N-Channel JFET General Purpose Amplifier

FEATURES • Low Leakage • Low Capacitance

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

N-Channel Silicon Junction Field-Effect Transistor

N-Channel Silicon Junction Field-Effect Transistor ● Audio Amplifiers ● Ultra-High Input Impedance Amplifiers

N-Channel Silicon Junction Field-Effect Transistor

N-Channel Silicon Junction Field-Effect Transistor ● Audio Amplifiers ● Ultra-High Input Impedance Amplifiers

N-Channel JFET General Purpose Amplifier

FEATURES • Low Leakage • Low Capacitance

N-Channel JFETs

DESCRIPTION The 2N/PN/SST4117A series of n-channel JFETs provide ultra-high input impedance. These devices are specified with a 1-pA limit and typically operate at 0.2 pA. This makes them perfect choices for use as high-impedance sensitive front-end amplifiers. FEATURES ● Ultra-Low Leakag

Small Signal Transistors

Small Signal Transistors

NPN EPITAXIAL SILICON TRANSISTOR

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA.

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

NPN Silicon General Purpose Transistor 625mW

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Through Hole TO-92 Package • Capable of 625mWatts of Power Dissipation • Epoxy meets UL 94 V-0 flammability rating • Mois

NPN Silicon General Purpose Transistor 625mW

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Through Hole TO-92 Package • Capable of 625mWatts of Power Dissipation • Epoxy meets UL 94 V-0 flammability rating • Mois

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High DC Current Gain ● High Transition Frequency

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Small Signal Transistors (NPN)

FEATURES ♦ NPN Silicon Epitaxial Transistor for switching and amplifier applications. ♦ Especially suitable for AF-driver and low-power output stages. ♦ As complementary type, the PNP transistor 2N4126 is recommended.

Silicon NPN Power Transistor

DESCRIPTION Collector-Emitter Breakdown Voltage -V(BR)CEO= 25V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):0.3V(Max) @IC= 50mA APPLICATIONS ·Power switching ·General Purpose Amplifier

NPN EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCEO = 25V • Collector Dissipation: PC (max) = 625mW

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

NPN general purpose transistor

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complement: 2N4126. FEATURES • Low current (max. 200 mA) • Low voltage (max. 25 V). APPLICATIONS • General purpose switching and amplification, e.g. small-signal audio-frequency applications.

Small Signal Transistors

Small Signal Transistors

NPN SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCH

NPN SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCH

NPN Plastic Encapsulated Transistor

0.2 A, 30 V NPN Plastic Encapsulated Transistor FEATURES ● High DC Current Gain ● High Transition Frequency

NPN SMALL SIGNAL TRANSISTOR

FEATURES For General Purpose Switching and Amplifier Applications Especially Suitable for AF Driver and Low Power Output Stages

Small Signal Transistors

Small Signal Transistors

PNP EPITAXIAL SILICON TRANSISTOR

AMPLIIFER TRANSISTOR • Collector-Emitter Voltage: VCEO = 30V • Collector Dissipation: PC(max) = 625mW

PNP General Purpose Amplifier

PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents of 10 µA to 100 mA.

PNP General Purpose Amplifier

PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier.

PNP general purpose transistor

DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: 2N4124. FEATURES • Low current (max. 200 mA) • Low voltage (max. 25 V). APPLICATIONS • General purpose switching and amplification, e.g. small-signal audio-frequency applications.

PNP EPITAXIAL SILICON TRANSISTOR

Small Signal Transistor (PNP)

Features • PNP Silicon Epitaxial Transistor for switching and amplifier applications. • Especially suitable for AF-driver and low-power output stages. • As complementary type, the NPN transistor 2N4124 is recommended.

Small Signal Transistors

Small Signal Transistors

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● PNP Silicon Epitaxial Transistor for Switching and Amplifier Applications. ● As Complementary Type, The NPN Transistor 2N4124 is Recommended.

Small Signal Transistors (PNP)

FEATURES ♦ PNP Silicon Epitaxial Transistor for switching and amplifier applications. Especially suit-able for AF-driver and low-power output stages. ♦ As complementary type, the NPN transistor 2N4124 is recommended.

PNP Plastic Encapsulated Transistor

FEATURES ● PNP Silicon Epitaxial Transistor for Switching and Amplifier Applications. ● Complementary of the 2N4124

SI PNP LP HF BJT

PNP SMALL SIGNAL TRANSISTOR