2N379晶体管资料
2N379别名：2N379三极管、2N379晶体管、2N379晶体三极管
2N379生产厂家：美国电子晶体管公司_美国摩托罗拉半导体公司_美国硅
2N379制作材料：Ge-PNP
2N379性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2N379封装形式：直插封装
2N379极限工作电压：80V
2N379最大电流允许值：5A
2N379最大工作频率：<1MHZ或未知
2N379引脚数：2
2N379最大耗散功率：106W
2N379放大倍数：
2N379图片代号：E-44
2N379vtest：80
2N379htest：999900
- 2N379atest：5
2N379wtest：106
2N379代换 2N379用什么型号代替：2N1531,2N1536,2N1537,2N1538,2N1546,2N1547,2N1548,2N3615,2N3616,2N3617,2N3618,3AD57B,
2N379价格
参考价格：￥20.9563
型号：2N3790 品牌：Central 备注：这里有2N379多少钱，2026年最近7天走势，今日出价，今日竞价，2N379批发/采购报价，2N379行情走势销售排行榜，2N379报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SILICON PNP POWER TRANSISTORS SILICON PNP POWER TRANSISTORS 10 AMPERE POWER TRANSISTORS PNP SILICON 60-80 VOLTS 150 WATTS | BOCA 博卡 |   | ||
PNP POWER TRANSISTORS JEDEC TO-3 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3789, 2N3790, 2N3791, and 2N3792 are silicon PNP power transistors, manufactured by the epitaxial planar process, designed for medium speed switching and amplifier applications. | CENTRAL | | ||
EPITAXIAL-BASE NPN - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP types are 2N3789, 2N3790, 2N3791 and 2N3792 respectively. | COMSET | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SILICON PNP POWER TRANSISTORS SILICON PNP POWER TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N3715 ,2N3716 • Excellent safe operating area APPLICATIONS • Designed for medium-speed switching and amplifier applications | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N3715 ,2N3716 • Excellent safe operating area APPLICATIONS • Designed for medium-speed switching and amplifier applications | ISC 无锡固电 | | ||
SILICON PNP POWER TRANSISTORS SILICON PNP POWER TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Bipolar PNP Device in a Hermetically sealed TO3 Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. Bipolar PNP Device. VCEO = 60V IC = 10A | SEME-LAB | | ||
PNP Silicon High-Power -60V to -80V, -10A This specification covers the performance requirements for power PNP silicon 2N3791 and 2N3792 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/379. The device packages for the encapsulated device | MICROCHIP 微芯科技 | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
EPITAXIAL-BASE NPN - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP types are 2N3789, 2N3790, 2N3791 and 2N3792 respectively. | COMSET | | ||
PNP HIGH POWER SILICON TRANSISTOR PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/379 | MICROSEMI 美高森美 | | ||
SILICON PNP POWER TRANSISTORS SILICON PNP POWER TRANSISTORS 10 AMPERE POWER TRANSISTORS PNP SILICON 60-80 VOLTS 150 WATTS | BOCA 博卡 | | ||
PNP POWER TRANSISTORS JEDEC TO-3 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3789, 2N3790, 2N3791, and 2N3792 are silicon PNP power transistors, manufactured by the epitaxial planar process, designed for medium speed switching and amplifier applications. | CENTRAL | | ||
Bipolar PNP Device in a Hermetically sealed Bipolar PNP Device in a Hermetically sealed Ceramic Surface Mount Package for High Reliability Applications Bipolar PNP Device. VCEO = 60V IC = 10A | SEME-LAB | | ||
SILICON PNP POWER TRANSISTORS SILICON PNP POWER TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
PNP SILICON POWER TRANSISTOR P-N-P SILICON POWER TRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N3715 ,2N3716 • Excellent safe operating area APPLICATIONS • Designed for medium-speed switching and amplifier applications | SAVANTIC | | ||
PNP SILICON EPITAXIAL BASE POWER TANSISTORS APPLICATIONS Linear Power and Switching Applications | SEME-LAB | | ||
PNP POWER TRANSISTORS JEDEC TO-3 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3789, 2N3790, 2N3791, and 2N3792 are silicon PNP power transistors, manufactured by the epitaxial planar process, designed for medium speed switching and amplifier applications. | CENTRAL | | ||
PNP HIGH POWER SILICON TRANSISTOR PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/379 | MICROSEMI 美高森美 | | ||
SILICON PNP POWER TRANSISTORS SILICON PNP POWER TRANSISTORS 10 AMPERE POWER TRANSISTORS PNP SILICON 60-80 VOLTS 150 WATTS | BOCA 博卡 | | ||
EPITAXIAL-BASE NPN - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP types are 2N3789, 2N3790, 2N3791 and 2N3792 respectively. | COMSET | | ||
Bipolar Transistor Description: PNP Silicon power transistor in a TO-3 package. Designed for medium-speed switching and amplifier applications. Features: • Excellent safe operating areas • hfe (Min.) 25 and 50 @ Ic = 1A Description Power Transistor, Silicon, TO-3, PNP, 10A, 80V | MULTICOMP 易络盟 | | ||
POWER TRANSISTORS(10A,150W) SILICON PNP POWER TRANSISTORS 10 AMPERE POWER TRANSISTORS PNP SILICON 60-80 VOLTS 150 WATTS | MOSPEC 统懋 | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N3715 ,2N3716 • Excellent safe operating area APPLICATIONS • Designed for medium-speed switching and amplifier applications | ISC 无锡固电 | | ||
MOSFET LOW-POWER AUDIO MOSFET LOW-POWER AUDIO N-CHANNEL - DEPLETION | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
MOSFET LOW-POWER AUDIO MOSFET LOW-POWER AUDIO N-CHANNEL - DEPLETION | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
PNP SILICON ANNULAR TRANSISTORS PNP SILICON ANNULAR TRANSISTORS ... designed for low-level, low-noise amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Chip Type 2C2605 Geometry 0220 Polarity NPN Chip type 2C2605 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high speed switching applications. Features: • High speed switching capabilities | SEMICOA | | ||
PNP SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3798, 2N3799 series devices are silicon PNP epitaxial planar transistors designed for low noise amplifier applications. MARKING: FULL PART NUMBER | CENTRAL | | ||
Small Signal Transistors Small Signal Transistors TO-18 Case (Continued) | CENTRAL | | ||
PNP SILICON ANNULAR TRANSISTORS PNP SILICON ANNULAR TRANSISTORS ... designed for low-level, low-noise amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
PNP, LOW NOISE AMPLIFIER TRANSISTOR FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR • CECC SCREENING OPTIONS • LOW NOISE AMPLIFIER APPLICATIONS: • Low Level Amplifier • Instrumentation Amplifiers • General Purpose | SEME-LAB | | ||
PNP SILICON ANNULAR TRANSISTORS PNP SILICON ANNULAR TRANSISTORS ... designed for low-level, low-noise amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
PNP SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3798, 2N3799 series devices are silicon PNP epitaxial planar transistors designed for low noise amplifier applications. MARKING: FULL PART NUMBER | CENTRAL | | ||
Chip Type 2C2605 Geometry 0220 Polarity NPN Chip type 2C2605 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high speed switching applications. Features: • High speed switching capabilities | SEMICOA | | ||
Small Signal Transistors Small Signal Transistors TO-18 Case (Continued) | CENTRAL | | ||
PNP SILICON ANNULAR TRANSISTORS PNP SILICON ANNULAR TRANSISTORS ... designed for low-level, low-noise amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
PNP, LOW NOISE AMPLIFIER TRANSISTOR FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR • CECC SCREENING OPTIONS • LOW NOISE AMPLIFIER APPLICATIONS: • Low Level Amplifier • Instrumentation Amplifiers • General Purpose | SEME-LAB | | ||
SILICON PLANAR EPITAXIAL PNP TRANSISTOR FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR • CECC SCREENING OPTIONS • LOW NOISE AMPLIFIER APPLICATIONS: • Low Level Amplifier • Instrumentation Amplifiers • General Purpose | TTELEC | | ||
Bipolar PNP Device in a Hermetically sealed TO3 文件：15.52 Kbytes Page：1 Pages | SEME-LAB | | ||
isc Silicon PNP Power Transistor 文件：261.519 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
SILICON PNP POWER TRANSISTORS 文件：494.36 Kbytes Page：2 Pages | CENTRAL | | ||
EPITAXIAL-BASE TRANSISTORS 文件：82.33 Kbytes Page：4 Pages | COMSET | | ||
Bipolar PNP Device in a Hermetically sealed 文件：14.67 Kbytes Page：1 Pages | SEME-LAB | | ||
Bipolar PNP Device in a Hermetically sealed TO3 文件：15.52 Kbytes Page：1 Pages | SEME-LAB | | ||
Bipolar Junction Transistors | TTELEC | | ||
Bipolar Junction Transistors | TTELEC | | ||
Bipolar PNP Device in a Hermetically sealed 文件：14.67 Kbytes Page：1 Pages | SEME-LAB | | ||
封装/外壳：TO-3 包装：卷带（TR） 描述：TRANS PNP 60V 10A TO3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | MICROCHIP 微芯科技 | | ||
Silicon PNP Power Transistors 文件：113.68 Kbytes Page：3 Pages | SAVANTIC | | ||
EPITAXIAL-BASE TRANSISTORS 文件：82.33 Kbytes Page：4 Pages | COMSET | | ||
SILICON PNP POWER TRANSISTORS 文件：494.36 Kbytes Page：2 Pages | CENTRAL | | ||
封装/外壳：TO-204AA，TO-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 10A TO-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | CENTRAL | | ||
Silicon PNP Power Transistors 文件：113.68 Kbytes Page：3 Pages | SAVANTIC | | ||
EPITAXIAL-BASE TRANSISTORS 文件：82.33 Kbytes Page：4 Pages | COMSET | | ||
SILICON PNP POWER TRANSISTORS 文件：494.36 Kbytes Page：2 Pages | CENTRAL | |
2N379产品属性
- 类型
描述
- Maximum Transition Frequency：
4(Min)MHz
- Maximum Power Dissipation：
150000mW
- Maximum DC Collector Current：
10A
- Maximum Collector Emitter Voltage：
80V
- Maximum Collector Emitter Saturation Voltage：
1@5AV
- Maximum Collector Base Voltage：
100V
- Configuration：
Single
- Category：
Bipolar Power
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MSC |
25+ |
192 |
公司优势库存 热卖中!!! |
||||
MSC |
0426+ |
TO-2 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MSC |
23+ |
TO-2 |
310 |
全新原装正品现货,支持订货 |
|||
MSC |
23+ |
TO-2 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
MOTOROLA/摩托罗拉 |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
MOTOROLA/摩托罗拉 |
23+ |
TO-3 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
MOTOROLA/摩托罗拉 |
专业铁帽 |
TO-3 |
300 |
原装铁帽专营,代理渠道量大可订货 |
|||
26+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
MOT |
25+ |
66880 |
原装正品，欢迎询价 |
||||
MICROSEMI |
24+ |
SMD |
1680 |
MICROSEMI专营品牌进口原装现货假一赔十 |
2N379规格书下载地址
2N379参数引脚图相关
- 4921
- 4899
- 485接口
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- 2N3809
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- 2N3803
- 2N3802
- 2N3801
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- 2N380
- 2N38(A)
- 2N3799X
- 2N3799A
- 2N3799
- 2N3798A
- 2N3798
- 2N3797
- 2N3796
- 2N3795
- 2N3794
- 2N3793
- 2N3792
- 2N3791
- 2N3790X
- 2N3790
- 2N3789
- 2N3788
- 2N3785
- 2N3784
- 2N3783
- 2N3782
- 2N3781
- 2N3780
- 2N378
- 2N377A
- 2N3779
- 2N3778
- 2N3777
- 2N3776
- 2N3775
- 2N3774
- 2N3773L
- 2N3773G
- 2N3773
- 2N3772J
- 2N3772G
- 2N3772
- 2N3771G
- 2N3771
- 2N3770
- 2N376A
- 2N3767
- 2N3766
- 2N3765
- 2N3764
- 2N3763L
- 2N3763
- 2N3762L
2N379数据表相关新闻
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2019-4-16
DdatasheetPDF页码索引
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