POWER TRANSISTORS(10A,150W)

SILICON PNP POWER TRANSISTORS 10 AMPERE POWER TRANSISTORS PNP SILICON 60-80 VOLTS 150 WATTS

PNP SILICON EPITAXIAL BASE POWER TANSISTORS

APPLICATIONS Linear Power and Switching Applications

SILICON PNP POWER TRANSISTORS

SILICON PNP POWER TRANSISTORS 10 AMPERE POWER TRANSISTORS PNP SILICON 60-80 VOLTS 150 WATTS

PNP HIGH POWER SILICON TRANSISTOR

PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/379

Power Transistors

Power Transistors

PNP POWER TRANSISTORS JEDEC TO-3 CASE

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3789, 2N3790, 2N3791, and 2N3792 are silicon PNP power transistors, manufactured by the epitaxial planar process, designed for medium speed switching and amplifier applications.

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N3715 ,2N3716 • Excellent safe operating area APPLICATIONS • Designed for medium-speed switching and amplifier applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N3715 ,2N3716 • Excellent safe operating area APPLICATIONS • Designed for medium-speed switching and amplifier applications

EPITAXIAL-BASE NPN - PNP

EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP types are 2N3789, 2N3790, 2N3791 and 2N3792 respectively.

PNP SILICON POWER TRANSISTOR

P-N-P SILICON POWER TRANSISTOR

SILICON PNP POWER TRANSISTORS

SILICON PNP POWER TRANSISTORS

Bipolar Transistor

Description: PNP Silicon power transistor in a TO-3 package. Designed for medium-speed switching and amplifier applications. Features: • Excellent safe operating areas • hfe (Min.) 25 and 50 @ Ic = 1A Description Power Transistor, Silicon, TO-3, PNP, 10A, 80V

PNP Silicon High-Power -60V to -80V, -10A

This specification covers the performance requirements for power PNP silicon 2N3791 and 2N3792 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/379.The device packages for the encapsulated device

封装/外壳：TO-204AA，TO-3 包装：卷带（TR） 描述：TRANS PNP 80V 10A TO3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

EPITAXIAL-BASE TRANSISTORS

文件：82.33 Kbytes Page：4 Pages

Silicon PNP Power Transistors

文件：113.68 Kbytes Page：3 Pages

SILICON PNP POWER TRANSISTORS

文件：494.36 Kbytes Page：2 Pages

封装/外壳：TO-204AA，TO-3 包装：管件 描述：TRANS PNP 80V 10A TO-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP SILICON EPITAXIAL BASE POWER TANSISTORS

文件：20.29 Kbytes Page：2 Pages

Trans GP BJT PNP 80V 10A 3-Pin(2+Tab) TO-3 Sleeve

Bipolar Junction Transistors

Bipolar PNP Device in a Hermetically sealed

文件：14.67 Kbytes Page：1 Pages

PNP HIGH POWER SILICON TRANSISTOR

PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/379

PNP HIGH POWER SILICON TRANSISTOR

PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/379