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2N376晶体管资料

  • 2N376别名:2N376三极管、2N376晶体管、2N376晶体三极管

  • 2N376生产厂家:美国电子晶体管公司_美国摩托罗拉半导体公司_美国硅

  • 2N376制作材料:Ge-PNP

  • 2N376性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2N376封装形式:直插封装

  • 2N376极限工作电压:40V

  • 2N376最大电流允许值:3A

  • 2N376最大工作频率:<1MHZ或未知

  • 2N376引脚数:2

  • 2N376最大耗散功率:90W

  • 2N376放大倍数

  • 2N376图片代号:E-44

  • 2N376vtest:40

  • 2N376htest:999900

  • 2N376atest:3

  • 2N376wtest:90

  • 2N376代换 2N376用什么型号代替:2N1539,2N1530,2N1531,2N1532,2N1533,2N1534,2N1535,2N1536,2N1537,2N1538,2N1539,2N1540,2N1541,2N1542,2N1543,2N1544,2N1545,2N1546,2N1547,2N1548,2N2138,2N2139,2N2140,2N2141,2N2143,2N2144,2N2145,2N2146,3AD57B,

型号 功能描述 生产厂家 企业 LOGO 操作
2N376

GERMANIUM POWER TRANSISTORS

4 AMP GERMANIUM PNP 5 AMP GERMANIUM PNP 6 AMP GERMANIUM PNP

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N376

GERMANIUM POWER TRANSISTORS

4 AMP GERMANIUM PNP 5 AMP GERMANIUM PNP 6 AMP GERMANIUM PNP

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N376

GERMANIUM POWER TRANSISTORS

4 AMP GERMANIUM PNP 5 AMP GERMANIUM PNP 6 AMP GERMANIUM PNP

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N376

GERMANIUM PNP TRANSISTORS

文件:2.44311 Mbytes Page:6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SI PNP POWER BJT

Collector connected to case

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Type 2N3762 Geometry 6706 Polarity PNP

Features: • General-purpose transistor for switching and amplifier applicatons. • Housed in a TO-39 case. • Also available in chip form using the 6706 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/396 which Semicoa meets in all cases.

SEMICOA

PNP SWITCHING SILICON TRANSISTOR

PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396

MICROSEMI

美高森美

Small Signal Transistors

Small Signal Transistors TO-39 Case

CENTRAL

SPRINGFIELD, NEW JERSEY 07081

Collector connected to case

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP SWITCHING SILICON TRANSISTOR

PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396

MICROSEMI

美高森美

Type 2N3762L Geometry 6706 Polarity PNP

Features: • General-purpose transistor for switching and amplifier applicatons. • Housed in a TO-5 case. • Also available in chip form using the 6706 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/396 which Semicoa meets in all cases.

SEMICOA

Type 2N3763 Geometry 6706 Polarity PNP

Features: • General-purpose transistor for switching and amplifier applicatons. • Housed in a TO-39 case. • Also available in chip form using the 6706 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/396 which Semicoa meets in all cases.

SEMICOA

PNP SWITCHING SILICON TRANSISTOR

PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396

MICROSEMI

美高森美

Small Signal Transistors

Small Signal Transistors TO-39 Case

CENTRAL

SPRINGFIELD, NEW JERSEY 07081

Collector connected to case

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP Silicon Switching -40V to -60V, -1.5A

This specification covers the performance requirements for PNP silicon switching 2N3762, 2N3763, 2N3764 and 2N3765 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/396 and two levels of product as

MICROCHIP

微芯科技

PNP SWITCHING SILICON TRANSISTOR

PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396

MICROSEMI

美高森美

Type 2N3763L Geometry 6706 Polarity PNP

Features: • General-purpose transistor for switching and amplifier applicatons. • Housed in a TO-5 case. • Also available in chip form using the 6706 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/396 which Semicoa meets in all cases.

SEMICOA

Type 2N3764 Geometry 6706 Polarity PNP

Features: • General-purpose transistor for switching and amplifier applicatons. • Housed in a TO-46 case. • Also available in chip form using the 6706 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/396 which Semicoa meets in all cases.

SEMICOA

Small Signal Transistors

Small Signal Transistors TO-39 Case

CENTRAL

PNP SWITCHING SILICON TRANSISTOR

PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396

MICROSEMI

美高森美

SPRINGFIELD, NEW JERSEY 07081

Collector connected to case

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SPRINGFIELD, NEW JERSEY 07081

Collector connected to case

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP SWITCHING SILICON TRANSISTOR

PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396

MICROSEMI

美高森美

Type 2N3765 Geometry 6706 Polarity PNP

Features: • General-purpose transistor for switching and amplifier applicatons. • Housed in a TO-46 case. • Also available in chip form using the 6706 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/396 which Semicoa meets in all cases.

SEMICOA

isc Silicon NPN Power Transistor

DESCRIPTION • Continuous Collector Current IC= 4A • Collector Power Dissipation- : PC= 20W @TC= 25℃ APPLICATIONS • Designed for power amplifier and medium speed switching applications.

ISC

无锡固电

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

NPN Power Silicon Transistor

Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/518 • TO-66 (TO-213AA) Package

MA-COM

Power Transistors

Power Transistors TO-66 Case

CENTRAL

NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/518

MICROSEMI

美高森美

NPN SILICON POWER TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3766 and 2N3767 are silicon NPN power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. MARKING: FULL PART NUMBER

CENTRAL

SI NPN POWER BJT

Description: Si NPN Power BJT I(C) = 1 A to 2.4 A

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON POWER TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3766 and 2N3767 are silicon NPN power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. MARKING: FULL PART NUMBER

CENTRAL

Power Transistors

Power Transistors TO-66 Case

CENTRAL

NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/518

MICROSEMI

美高森美

NPN Power Silicon Transistor

Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/518 • TO-66 (TO-213AA) Package

MA-COM

SPRINGFIELD, NEW JERSEY 07081

EPITAXIAL-BASE TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

isc Silicon NPN Power Transistor

DESCRIPTION • Continuous Collector Current IC= 4A • Collector Power Dissipation- : PC= 20W @TC= 25℃ APPLICATIONS • Designed for power amplifier and medium speed switching applications.

ISC

无锡固电

GERMANIUM POWER TRANSISTORS

4 AMP GERMANIUM PNP 5 AMP GERMANIUM PNP 6 AMP GERMANIUM PNP

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

GERMANIUM POWER TRANSISTORS

4 AMP GERMANIUM PNP 5 AMP GERMANIUM PNP 6 AMP GERMANIUM PNP

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

GERMANIUM POWER TRANSISTORS

4 AMP GERMANIUM PNP 5 AMP GERMANIUM PNP 6 AMP GERMANIUM PNP

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP SILICON TRANSISTOR

文件:77.15 Kbytes Page:2 Pages

CENTRAL

PNP SILICON TRANSISTOR

文件:77.15 Kbytes Page:2 Pages

CENTRAL

PNP Transistor

MICROCHIP

微芯科技

包装:散装 描述:PNP TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

封装/外壳:3-SMD,无引线 包装:卷带(TR) 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

Bipolar PNP Device in a Hermetically sealed TO39 Metal Package.

文件:18.88 Kbytes Page:1 Pages

SEME-LAB

PNP SILICON TRANSISTOR

文件:77.15 Kbytes Page:2 Pages

CENTRAL

PNP Transistor

MICROCHIP

微芯科技

Bipolar NPN Device in a Hermetically sealed TO66

文件:15.16 Kbytes Page:1 Pages

SEME-LAB

SILICON NPN POWER TRANSISTORS

文件:344.26 Kbytes Page:2 Pages

CENTRAL

SILICON NPN POWER TRANSISTORS

文件:344.26 Kbytes Page:2 Pages

CENTRAL

Bipolar NPN Device in a Hermetically sealed

文件:14.66 Kbytes Page:1 Pages

SEME-LAB

Bipolar NPN Device in a Hermetically sealed

文件:15.41 Kbytes Page:1 Pages

SEME-LAB

SILICON NPN TRANSISTOR

文件:163.29 Kbytes Page:2 Pages

SEME-LAB

Bipolar NPN Device in a Hermetically sealed TO66 Metal Package

文件:11.92 Kbytes Page:1 Pages

SEME-LAB

SILICON NPN POWER TRANSISTORS

文件:344.26 Kbytes Page:2 Pages

CENTRAL

SILICON NPN TRANSISTOR

文件:163.29 Kbytes Page:2 Pages

SEME-LAB

NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS

文件:23.38 Kbytes Page:2 Pages

SEME-LAB

2N376产品属性

  • 类型

    描述

  • 型号

    2N376

  • 制造商

    Microsemi Corporation

  • 功能描述

    TRANS GP BJT PNP 40V 1.5A 3PIN TO-39 - Bulk

  • 功能描述

    2N3762JAN

  • 制造商

    Motorola Inc

更新时间:2026-5-15 15:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOTOROLA/摩托罗拉
25+
CAN
18000
全新原装现货,假一赔十
MOTOROLA/摩托罗拉
21+
CAN
1638
只做原装正品,不止网上数量,欢迎电话微信查询!
mot
25+
500000
行业低价,代理渠道
MOT
2023+
CAN
50000
全新原装现货
MICROSEMI
24+
SMD
1680
MICROSEMI专营品牌进口原装现货假一赔十
MOTOROLA/摩托罗拉
22+
CAN
12245
现货,原厂原装假一罚十!
MOTOROLA/摩托罗拉
22+
CAN
8000
原装正品支持实单
2N3766
25+
2
2
MOTOROLA/摩托罗拉
25+
CAN
880000
明嘉莱只做原装正品现货
MICROCHIP
23+
7300
专注配单,只做原装进口现货

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