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2N371晶体管资料
2N371别名：2N371三极管、2N371晶体管、2N371晶体三极管
2N371生产厂家：美国无线电公司
2N371制作材料：Ge-PNP
2N371性质：射频/高频放大 （HF）
2N371封装形式：直插封装
2N371极限工作电压：24V
2N371最大电流允许值：0.01A
2N371最大工作频率：30MHZ
2N371引脚数：4
2N371最大耗散功率：0.08W
2N371放大倍数：
2N371图片代号：C-36
2N371vtest：24
2N371htest：30000000
- 2N371atest：0.01
2N371wtest：0.08
2N371代换 2N371用什么型号代替：AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,3AG54A,
2N371价格
参考价格：￥22.7027
型号：2N3710 品牌：Centralr 备注：这里有2N371多少钱，2025年最近7天走势，今日出价，今日竞价，2N371批发/采购报价，2N371行情走势销售排行榜，2N371报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N371 | GERMANIUM PNP TRANSISTORS 文件：2.44311 Mbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 |   | |
Small Signal Transistors Small Signal Transistors | Central | | ||
NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS NPN / PNP SILICON AF SMALL SIGNAL TRANSISTORS | MICRO-ELECTRONICS | | ||
Small Signal Transistors Small Signal Transistors | Central | | ||
NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS NPN / PNP SILICON AF SMALL SIGNAL TRANSISTORS | MICRO-ELECTRONICS | | ||
SILICON NPN POWER TRANSISTORS SILICON NPN POWER TRANSISTORS 10 AMPERE POWER TRANSISTORS NPN SILICON 60-80 VOLTS 150 WATTS | boca 博卡 | | ||
POWER TRANSISTORS(10A,150W) 10 AMPERE POWER TRANSISTORS NPN SILICON 60-80 VOLTS 150 WATTS | MOSPEC 统懋 | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
EPITAXIAL-BASE NPN - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP types are 2N3789, 2N3790, 2N3791 and 2N3792 respectively. | COMSET | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Excellent Safe Operating Area • Low Collector-Emitter Saturation Voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS • Designed for medium-speed switching and amplifier applications. | ISC 无锡固电 | | ||
NPN SILICON POWER TRANSISTORS NPN silicon power transistors for medium - speed switching and amplifier applications. Complement to PNP type 2N3789 thru 2N3792. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SILICON NPN TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N3715, and 2N3716 are silicon NPN power transistors manufactured by the epitaxial-base process, mounted in a hermetically sealed metal package designed for medium speed switching and amplifier applications. | Central | | ||
SILICON NPN TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N3715, and 2N3716 are silicon NPN power transistors manufactured by the epitaxial-base process, mounted in a hermetically sealed metal package designed for medium speed switching and amplifier applications. | Central | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Excellent Safe Operating Area • Low Collector-Emitter Saturation Voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS • Designed for medium-speed switching and amplifier applications. | ISC 无锡固电 | | ||
EPITAXIAL-BASE NPN - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP types are 2N3789, 2N3790, 2N3791 and 2N3792 respectively. | COMSET | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Bipolar NPN Device in a Hermetically sealed TO3 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. Bipolar NPN Device. VCEO = 80V IC = 10A | SEME-LAB | | ||
SILICON NPN POWER TRANSISTORS SILICON NPN POWER TRANSISTORS 10 AMPERE POWER TRANSISTORS NPN SILICON 60-80 VOLTS 150 WATTS | boca 博卡 | | ||
Bipolar NPN Device in a Hermetically sealed Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount Package for High Reliability Applications Bipolar NPN Device. VCEO = 80V IC = 10A | SEME-LAB | | ||
EPITAXIAL-BASE NPN - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP types are 2N3789, 2N3790, 2N3791 and 2N3792 respectively. | COMSET | | ||
isc Silicon NPN Power Transistors DESCRIPTION • DC Current Gain- : hFE= 50-150@IC= 1A • Wide Area of Safe Operation • Low Collector Saturation Voltage- : VCE(sat)= 0.8V(Max.)@ IC= 5A • Complement to Type 2N3791/3792 APPLICATIONS • Designed for medium-speed switching and amplifier applications | ISC 无锡固电 | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 VOLTS 150 WATTS Silicon NPN Power Transistors . . . designed for medium–speed switching and amplifier applications. These devices feature: • Total Switching Time at 3 A typically 1.15 µs • Gain Ranges Specified at 1 A and 3 A • Low VCE(sat): typically 0.5 V at IC = 5 A and IB = 0.5 A • Excellent Safe Operati | Motorola 摩托罗拉 | | ||
SILICON NPN POWER TRANSISTORS SILICON NPN POWER TRANSISTORS 10 AMPERE POWER TRANSISTORS NPN SILICON 60-80 VOLTS 150 WATTS | boca 博卡 | | ||
SILICON NPN TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N3715, and 2N3716 are silicon NPN power transistors manufactured by the epitaxial-base process, mounted in a hermetically sealed metal package designed for medium speed switching and amplifier applications. | Central | | ||
NPN High Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/408 • TO-3 (TO-204AA) Package | MA-COM | | ||
Silicon NPN Power Transistors DESCRIPTION • DC Current Gain- : hFE= 50-150@IC= 1A • Wide Area of Safe Operation • Low Collector Saturation Voltage- : VCE(sat)= 0.8V(Max.)@ IC= 5A • Complement to Type 2N3791/3792 APPLICATIONS • Designed for medium-speed switching and amplifier applications | ISC 无锡固电 | | ||
SILICON NPN POWER TRANSISTORS SILICON NPN POWER TRANSISTORS 10 AMPERE POWER TRANSISTORS NPN SILICON 60-80 VOLTS 150 WATTS | boca 博卡 | | ||
POWER TRANSISTORS(10A,150W) 10 AMPERE POWER TRANSISTORS NPN SILICON 60-80 VOLTS 150 WATTS | MOSPEC 统懋 | | ||
10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 VOLTS 150 WATTS Silicon NPN Power Transistors . . . designed for medium–speed switching and amplifier applications. These devices feature: • Total Switching Time at 3 A typically 1.15 µs • Gain Ranges Specified at 1 A and 3 A • Low VCE(sat): typically 0.5 V at IC = 5 A and IB = 0.5 A • Excellent Safe Operati | Motorola 摩托罗拉 | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
isc Silicon NPN Power Transistors DESCRIPTION • DC Current Gain- : hFE= 50-150@IC= 1A • Wide Area of Safe Operation • Low Collector Saturation Voltage- : VCE(sat)= 0.8V(Max.)@ IC= 5A • Complement to Type 2N3791/3792 APPLICATIONS • Designed for medium-speed switching and amplifier applications | ISC 无锡固电 | | ||
NPN High Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/408 • TO-3 (TO-204AA) Package | MA-COM | | ||
NPN SILICON POWER TRANSISTORS NPN silicon power transistors for medium - speed switching and amplifier applications. Complement to PNP type 2N3789 thru 2N3792. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SILICON NPN TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N3715, and 2N3716 are silicon NPN power transistors manufactured by the epitaxial-base process, mounted in a hermetically sealed metal package designed for medium speed switching and amplifier applications. | Central | | ||
EPITAXIAL-BASE NPN - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP types are 2N3789, 2N3790, 2N3791 and 2N3792 respectively. | COMSET | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package APPLICATIONS • They are intended for use in power linear and switching applications | SAVANTIC | | ||
Small Signal Transistors Small Signal Transistors TO-39 Case | Central | | ||
Silicon PNP Power Transistors DESCRIPTION: These power transistors are produced by PPCs DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use | Microsemi 美高森美 | | ||
POWER TRANSISTORS PNP SILICON 3 AMPERE POWER TRANSISTORS PNP SILICON 40, 60, 80 VOLTS 6 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SILICON NPN TRANSISTORS 文件：328.05 Kbytes Page：2 Pages | Central | | ||
SILICON NPN TRANSISTORS 文件：328.05 Kbytes Page：2 Pages | Central | | ||
SI NPN LO-PWR BJT 文件：92.62 Kbytes Page：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
360mW NPN silicon general purpose AF transistor | MICRO-ELECTRONICS | | ||
Bipolar Junction Transistors | TTELEC | | ||
EPITAXIAL-BASE TRANSISTORS 文件：82.55 Kbytes Page：4 Pages | COMSET | | ||
Bipolar NPN Device in a Hermetically sealed TO3 文件：15.51 Kbytes Page：1 Pages | SEME-LAB | | ||
EPITAXIAL-BASE TRANSISTORS 文件：82.55 Kbytes Page：4 Pages | COMSET | | ||
Trans GP BJT NPN 60V 10A 3-Pin(2+Tab) TO-3 Sleeve | NJS | | ||
Bipolar NPN Device in a Hermetically sealed 文件：14.66 Kbytes Page：1 Pages | SEME-LAB | | ||
EPITAXIAL-BASE TRANSISTORS 文件：82.55 Kbytes Page：4 Pages | COMSET | | ||
EPITAXIAL-BASE TRANSISTORS 文件：82.55 Kbytes Page：4 Pages | COMSET | | ||
封装/外壳：TO-204AA，TO-3 包装：散装 描述：TRANS NPN 60V 0.001A TO3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Microchip 微芯科技 | | ||
Bipolar NPN Device in a Hermetically sealed TO3 文件：15.52 Kbytes Page：1 Pages | SEME-LAB | | ||
NPN HIGH POWER SILICON TRANSISTOR 文件：64.18 Kbytes Page：2 Pages | Microsemi 美高森美 | | ||
封装/外壳：TO-204AA，TO-3 包装：管件 描述：TRANS NPN 60V 10A TO-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Central | | ||
Bipolar NPN Device in a Hermetically sealed 文件：14.66 Kbytes Page：1 Pages | SEME-LAB | | ||
EPITAXIAL-BASE TRANSISTORS 文件：82.55 Kbytes Page：4 Pages | COMSET | | ||
Silicon NPN Power Transistors 文件：111.74 Kbytes Page：3 Pages | SAVANTIC | | ||
NPN HIGH POWER SILICON TRANSISTOR 文件：64.18 Kbytes Page：2 Pages | Microsemi 美高森美 | |
2N371产品属性
- 类型
描述
- 型号
2N371
- 功能描述
两极晶体管 - BJT NPN Gen Pur SS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
24+ |
TO-3 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
MICROSEMI |
16+ |
TO3 |
40 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
CENTRAL |
24+ |
NA/ |
3265 |
原装现货,当天可交货,原型号开票 |
|||
ST/意法 |
25+ |
TO-3 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
ST/意法 |
24+ |
TO-3 |
990000 |
明嘉莱只做原装正品现货 |
|||
N/A |
24+/25+ |
20 |
原装正品现货库存价优 |
||||
SSI |
23+ |
TO |
6850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
CENTRAL |
18+ |
TO-3 |
33994 |
全新原装现货,可出样品,可开增值税发票 |
|||
SSI |
23+ |
TO |
2592 |
原厂原装正品 |
2N371规格书下载地址
2N371参数引脚图相关
- 4921
- 4899
- 485接口
- 47471
- 4735
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- 4591
- 4536
- 4313
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- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2n3904
- 2N3730
- 2N3728
- 2N3727
- 2N3726
- 2N3725A
- 2N3725
- 2N3724A
- 2N3724
- 2N3723
- 2N3722
- 2N3721
- 2N3720
- 2N372/33
- 2N372
- 2N3719
- 2N3718
- 2N3717
- 2N3716X
- 2N3716
- 2N3715
- 2N3714
- 2N3713
- 2N3712(S)
- 2N3711
- 2N3710
- 2N371/33
- 2N3709
- 2N3708
- 2N3707
- 2N3706
- 2N3705
- 2N3704
- 2N3703
- 2N3702
- 2N3701
- 2N3700S
- 2N3700
- 2N370/33
- 2N370
- 2N37
- 2N36SS
- 2N36S8
- 2N36S7
- 2N3694
- 2N3693
- 2N3692
- 2N3691
- 2N3690
- 2N3689
- 2N3688
- 2N3687
- 2N3686
- 2N3685
- 2N3683
2N371数据表相关新闻
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2023-2-212N3773
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2019-4-16
DdatasheetPDF页码索引
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