10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 VOLTS 150 WATTS

Silicon NPN Power Transistors . . . designed for medium–speed switching and amplifier applications. These devices feature: • Total Switching Time at 3 A typically 1.15 µs • Gain Ranges Specified at 1 A and 3 A • Low VCE(sat): typically 0.5 V at IC = 5 A and IB = 0.5 A • Excellent Safe Operati

SILICON NPN POWER TRANSISTORS

SILICON NPN POWER TRANSISTORS 10 AMPERE POWER TRANSISTORS NPN SILICON 60-80 VOLTS 150 WATTS

Power Transistors

Power Transistors

EPITAXIAL-BASE NPN - PNP

EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP types are 2N3789, 2N3790, 2N3791 and 2N3792 respectively.

SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N3715, and 2N3716 are silicon NPN power transistors manufactured by the epitaxial-base process, mounted in a hermetically sealed metal package designed for medium speed switching and amplifier applications.

NPN High Power Silicon Transistor

Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/408 • TO-3 (TO-204AA) Package

isc Silicon NPN Power Transistors

DESCRIPTION • DC Current Gain- : hFE= 50-150@IC= 1A • Wide Area of Safe Operation • Low Collector Saturation Voltage- : VCE(sat)= 0.8V(Max.)@ IC= 5A • Complement to Type 2N3791/3792 APPLICATIONS • Designed for medium-speed switching and amplifier applications

EPITAXIAL-BASE TRANSISTORS

文件：82.55 Kbytes Page：4 Pages

Bipolar NPN Device in a Hermetically sealed TO3

文件：15.52 Kbytes Page：1 Pages

封装/外壳：TO-204AA，TO-3 包装：散装 描述：TRANS NPN 60V 0.001A TO3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN HIGH POWER SILICON TRANSISTOR

文件：64.18 Kbytes Page：2 Pages

封装/外壳：TO-204AA，TO-3 包装：管件 描述：TRANS NPN 60V 10A TO-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Bipolar NPN Device in a Hermetically sealed

文件：14.66 Kbytes Page：1 Pages