SILICON NPN POWER TRANSISTORS

SILICON NPN POWER TRANSISTORS 10 AMPERE POWER TRANSISTORS NPN SILICON 60-80 VOLTS 150 WATTS

SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N3715, and 2N3716 are silicon NPN power transistors manufactured by the epitaxial-base process, mounted in a hermetically sealed metal package designed for medium speed switching and amplifier applications.

NPN High Power Silicon Transistor

Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/408 • TO-3 (TO-204AA) Package

10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 VOLTS 150 WATTS

Silicon NPN Power Transistors . . . designed for medium–speed switching and amplifier applications. These devices feature: • Total Switching Time at 3 A typically 1.15 µs • Gain Ranges Specified at 1 A and 3 A • Low VCE(sat): typically 0.5 V at IC = 5 A and IB = 0.5 A • Excellent Safe Operati

EPITAXIAL-BASE NPN - PNP

EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP types are 2N3789, 2N3790, 2N3791 and 2N3792 respectively.

Power Transistors

Power Transistors

isc Silicon NPN Power Transistors

DESCRIPTION • DC Current Gain- : hFE= 50-150@IC= 1A • Wide Area of Safe Operation • Low Collector Saturation Voltage- : VCE(sat)= 0.8V(Max.)@ IC= 5A • Complement to Type 2N3791/3792 APPLICATIONS • Designed for medium-speed switching and amplifier applications

Bipolar NPN Device in a Hermetically sealed TO3

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封装/外壳：TO-204AA，TO-3 包装：散装 描述：TRANS NPN 60V 0.001A TO3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

EPITAXIAL-BASE TRANSISTORS

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NPN HIGH POWER SILICON TRANSISTOR

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NPN Silicon High-Power 60V to 80V, 10A

封装/外壳：TO-204AA，TO-3 包装：管件 描述：TRANS NPN 60V 10A TO-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Bipolar NPN Device in a Hermetically sealed

文件：14.66 Kbytes Page：1 Pages