15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS 2N3055 (NPN) MJ2955(PNP) designed for general–purpose switching and amplifier applications. 1. DC Current Gain — hFE= 20 – 70 @ IC= 4 Adc 2. Collector–Emitter Saturation Voltage — VCE(sat)= 1.1 Vdc (Max) @ IC= 4 Adc

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, d

COMPLEMENTARY SILICON POWER TRANSISTORS

Description The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audi

NPN TRANSISTOR FOR POWERFUL AF OUTPUT STAGES

NPN Transistor for Powerful AF Output Stage 2 N 3055 is a single diffused NPN silicon transistor in TO 3 case (3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for use in powerful AF output stages and in stabilized power supply units.

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON POWER TRANSISTORS 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 115 WATTS

Complementary Silicon Power Transistors

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage −VCE(sat

TO-3 Power Package Transistors (NPN)

TO-3 Power Package Transistors (NPN)

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Bipolar NPN Device. VCEO = 100V IC = 15A

Complementary Silicon Power Transistors

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage −VCE(sat

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Complement to type MJ2955 ·DC Current Gain -hFE = 20–70 @ IC = 4 Adc ·Collector–Emitter Saturation Voltage -VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc ·Excellent Safe Operating Area APPLICATIONS ·Designed for general–purpose switching and amplifier

NPN POWER SILICON TRANSISTOR

Power Transistors

Power Transistors

POWER LINEAR AND SWITCHING APPLICATIONS

The 2N3055 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. Designed for general purpose, moderate speed, switching and amplifier applications Compliance to RoHS.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Complement to type MJ2955 ·DC Current Gain -hFE = 20–70 @ IC = 4 Adc ·Collector–Emitter Saturation Voltage -VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc ·Excellent Safe Operating Area APPLICATIONS ·Designed for general–purpose switching and amplif

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3055 and MJ2955 are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose switching and amplifier applications.

Silicon NPN Power Transistor

DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955 APPLICATIONS ·Designed for general-purpose switching and amplifier applications

SILICON PLANAR POWER TRANSISTORS

General Purpose Switching and Amplifier Applications 2N3055 NPN MJ2955 PNP

NPN SILICON PHOTO TRANSISTOR

NPN SILICON POWER TRANSISTOR

Complementary Silicon power transistors

DESCRIPTION The 2N3055 is a silicon epitaxial-base planar NPN transistor mounted in JEDEC TO-3 metal case. lt is intended for power switching circuits, and shunt regulators, output stages and amplifiers. series fidelity amplifiers The complementary PNP type is MJ2955. FEATURES Design

SILICON NPN POWER TRANSISTOR

Bipolar NPN Device. VCEO = 100V IC = 15A

NPN Transistor Bare Die

Features Collector current up to 15A High DC Current Gain, hFE = 20-70 @ IC = 4A Low VCE(sat) = 1.1V Max @ IC = 4A Solderable back metal High Reliability tested grades for Military + Space

Silicon NPN Power Transistor

DESCRIPTION ◇Excellent Safe Operating Area ◇DC Current Gain-hFE=20-70@IC = 4A ◇Collector-Emitter Saturation Voltage-: VCE(sat)= 1.1 V(Max)@ IC = 4A ◇Complement to Type 2N2955 APPLICATIONS ◇Designed for general-purpose switching and amplifierapplications

Transistor NPN, TO-3

Features: •Power dissipation - Pd = 115W at Tc = 25°C •DC current gain hFE = 20 ~ 70 at Ic = 4A •VCE(Sat) = 1.1V (max.) at Ic = 4A, IB = 400mA •Designed for use in general-purpose amplifier and switching applications

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. The complementary PNP type is MJ2955.

Bipolar Transistor

NPN Silicon Power 70V, 15A

NPN TRANSISTOR FOR POWERFUL AF OUTPUT STAGES

Complementary power transistors

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GERMANIUM PNP TRANSISTORS

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silicon NPN triple diffused type

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NPN Power Silicon Transistor

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Silicon NPN Power Transistors

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COMPLEMENTARY SILICON POWER TRANSISTORS

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Silicon NPN Power Transistors

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NPN SILICON DARLINGTONS

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封装/外壳：TO-204AA，TO-3 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 60V 15A TO3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-204AA，TO-3 包装：卷带（TR） 描述：TRANS NPN 70V 15A TO3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SILICON PLANAR POWER TRANSISTORS

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SILICON NPN TRANSISTORS

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POWER TRANSISTORS(15A,50V,115W)

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Transistor NPN, TO-3

Features: •Power dissipation - Pd = 115W at Tc = 25°C •DC current gain hFE = 20 ~ 70 at Ic = 4A •VCE(Sat) = 1.1V (max.) at Ic = 4A, IB = 400mA •Designed for use in general-purpose amplifier and switching applications

COMPLEMENTARY SILICON POWER TRANSISTORS

Description The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audi

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS 2N3055 (NPN) MJ2955(PNP) designed for general–purpose switching and amplifier applications. 1. DC Current Gain — hFE= 20 – 70 @ IC= 4 Adc 2. Collector–Emitter Saturation Voltage — VCE(sat)= 1.1 Vdc (Max) @ IC= 4 Adc

TO-3 Power Package Transistors (NPN)

TO-3 Power Package Transistors (NPN)

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

2N3055A,MJ15015 --> NPN MJ15016,MJ2955A --> PNP 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTOR 60, 120 VOLTS 115, 180 WATTS

POWER TRANSISTORS(15A)

2N3055A(NPN) MJ15015(NPN) MJ2955A(PNP) NJ15016(PNP)

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, d

COMPLEMENTARY SILICON POWER TRANSISTORS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, d

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Complement to type MJ2955A ·Excellent Safe Operating Area APPLICATIONS ·For high power audio ,stepping motor and other linear applications ·Relay or solenoid drviers ·DC-DC converters inverters

Bipolar NPN Device in a Hermetically sealed TO3

Bipolar NPN Device. VCEO = 60V IC = 15A

COMPLEMENTARY SILICON HIGH - POWER TRANSISTORS

2N3055A,MJ15015 --> NPN MJ15016,MJ2955A --> PNP 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTOR 60, 120 VOLTS 115, 180 WATTS

Complementary Silicon High-Power Transistors

These PowerBase complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc−to−dc converters, inverters, or for inductive loads requiring higher safe oper

N-P-N SILICON POWER TRANSISTOR

NPN SILICON POWER TRANSISTOR

Bipolar NPN Device in a Hermetically sealed

Bipolar NPN Device. VCEO = 60V IC = 15A

Complementary Silicon Power Transistors

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage −VCE(sat

Complementary Silicon Power Transistors

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage −VCE(sat

Complementary Silicon Power Transistors

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage −VCE(sat

isc Silicon NPN Power Transistor

DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage-: VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS ·Designed for general-purpose switching and amplifier Applications.

SILICON N-P-N GENERAL - PURPOSE

SILICON NPN GENERAL PURPOSE 2N3055 are Homataxial-base type useful for power switching circuits, for series- and shunt-regulator driver and output stages, and for high-fidelity amplifiers.