Transistor NPN, TO-3

Features: •Power dissipation - Pd = 115W at Tc = 25°C •DC current gain hFE = 20 ~ 70 at Ic = 4A •VCE(Sat) = 1.1V (max.) at Ic = 4A, IB = 400mA •Designed for use in general-purpose amplifier and switching applications

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS 2N3055 (NPN) MJ2955(PNP) designed for general–purpose switching and amplifier applications. 1. DC Current Gain — hFE= 20 – 70 @ IC= 4 Adc 2. Collector–Emitter Saturation Voltage — VCE(sat)= 1.1 Vdc (Max) @ IC= 4 Adc

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, d

COMPLEMENTARY SILICON POWER TRANSISTORS

Description The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audi

NPN TRANSISTOR FOR POWERFUL AF OUTPUT STAGES

NPN Transistor for Powerful AF Output Stage 2 N 3055 is a single diffused NPN silicon transistor in TO 3 case (3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for use in powerful AF output stages and in stabilized power supply units.

POWER TRANSISTORS(15A,50V,115W)

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COMPLEMENTARY SILICON POWER TRANSISTORS

Description The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audi