HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

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SILICON PLANAR EPITAXIAL PNP TRANSISTOR

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2N2907ACSM - 单晶体管 双极, PNP, -60 V, 500 mW, -600 mA, 100 hFE

1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS

1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS These transistor are silicon planar pitaxial pnp devices conforming to JEDEC TO-18, BS SO-132A and IEC C7/B11 outlines. They are designed for high speed saturated switching and general purpose application.

PNP switching transistors

DESCRIPTION PNP switching transistor in a TO-18 metal package. NPN complements: 2N2222 and 2N2222A. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification.

Chip Type 2C2907A Geometry 0600 Polarity PNP

Chip type 2C2907A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications. Features: Radiation graphs available

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

PNP SILICON PLANAR EPITAXIAL TRANSISTORS THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS.

PNP SILICON PLANAR TRANSISTORS

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SILICON PLANAR EPITAXIAL PNP TRANSISTOR

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SILICON PLANAR EPITAXIAL PNP TRANSISTOR

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Bipolar Junction Transistors

Bipolar Junction Transistors

SILICON PLANAR EPITAXIAL PNP TRANSISTOR

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