EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. • Low Collector Output Capacita

Laser Marking

文件：21.86 Kbytes Page：1 Pages

EPITAXIAL PLANAR PNP TRANSISTOR

Laser Marking

文件：21.86 Kbytes Page：1 Pages

PNP switching transistors

PNP switching transistor in a TO-18 metal package. NPN complements: 2N2222 and 2N2222A. High-speed switching , Driver applications for industrial service. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • High-speed switching • Driver application

Chip Type 2C2904A Geometry 0600 Polarity PNP

Chip type 2C2904A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS

1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS These transistor are silicon planar pitaxial pnp devices conforming to JEDEC TO-18, BS SO-132A and IEC C7/B11 outlines. They are designed for high speed saturated switching and general purpose application.

Chip Type 2C2904A Geometry 0600 Polarity PNP

Chip type 2C2904A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

PNP switching transistors

PNP switching transistor in a TO-18 metal package. NPN complements: 2N2222 and 2N2222A. High-speed switching , Driver applications for industrial service. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • High-speed switching • Driver application