2N2906晶体管资料

  • 2N2906别名:2N2906三极管、2N2906晶体管、2N2906晶体三极管

  • 2N2906生产厂家:德国AEG公司_DIT_美国、法国费兰第有限公司_美国通

  • 2N2906制作材料:Si-PNP

  • 2N2906性质:通用型 (Uni)

  • 2N2906封装形式:直插封装

  • 2N2906极限工作电压:60V

  • 2N2906最大电流允许值:0.6A

  • 2N2906最大工作频率:<1MHZ或未知

  • 2N2906引脚数:3

  • 2N2906最大耗散功率:0.4W

  • 2N2906放大倍数:β=120

  • 2N2906图片代号:D-8

  • 2N2906vtest:60

  • 2N2906htest:999900

  • 2N2906atest:.6

  • 2N2906wtest:.4

  • 2N2906代换 2N2906用什么型号代替:BC528,BC638,BSW24,BSV47,BSV48,2N3485,3DK9D,

2N2906价格

参考价格:¥5.5884

型号:2N2906A 品牌:MULTICOMP 备注:这里有2N2906多少钱,2024年最近7天走势,今日出价,今日竞价,2N2906批发/采购报价,2N2906行情走势销售排行榜,2N2906报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2N2906

PNPswitchingtransistors

PNPswitchingtransistorinaTO-18metalpackage.NPNcomplements:2N2222and2N2222A.High-speedswitching,Driverapplicationsforindustrialservice. FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.60V). APPLICATIONS •High-speedswitching •Driverapplication

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
2N2906

1.8WPNPGENERALPURPOSESAMLLSIGNALTRANSISTORS

1.8WPNPGENERALPURPOSESAMLLSIGNALTRANSISTORS ThesetransistoraresiliconplanarpitaxialpnpdevicesconformingtoJEDECTO-18,BSSO-132AandIECC7/B11outlines. Theyaredesignedforhighspeedsaturatedswitchingandgeneralpurposeapplication.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
2N2906

ChipType2C2904AGeometry0600PolarityPNP

Chiptype2C2904AbySemicoaSemiconductorsprovidesperformancesimilartothesedevices. ProductSummary: APPLICATIONS:Designedforgeneralpurposeswitchingandamplifierapplications.

Semicoa

SEMICOA

Semicoa
2N2906

PNPSILICONGENERALPURPOSEAMPLIFIERSANDSWITCHES

PNPSILICONGENERALPURPOSEAMPLIFIERANDSWITCHES

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS
2N2906

PNPSILICONPLANARSWITCHINGTRANSISTORS

PNPSILICONPLANARSWITCHINGTRANSISTORS SwitchingandLinearApplication

CDIL

CDIL

CDIL
2N2906

GENERALPURPOSEAMPLIFIERSTRANSISTORS

GENERALPURPOSEAMPLIFIERSTRANSISTORS The2N2906and2N2906AarePNPtransistorsmountedinTO-18metalpackage. Theyareintendedforhighspeedswitchingandgeneralpurposeapplications. NPNcomplementsare2N2221and2N2221A. CompliancetoRoHS

COMSET

Comset Semiconductor

COMSET
2N2906

20STERNAVESPRINGFIELD,NEWJERSEY07081U.S.A

GENERALPURPOSETRANSISTOR PNPSILICON

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2N2906

封装/外壳:TO-206AA,TO-18-3 金属罐 包装:管件 描述:TRANS PNP 40V 0.6A TO18 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N2906

封装/外壳:TO-206AA,TO-18-3 金属罐 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:SMALL-SIGNAL BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MicrochipMicrochip Technology Inc.

微芯科技微芯科技股份有限公司

Microchip
2N2906

PNPSILICONTRANSISTOR

文件:531.8 Kbytes Page:2 Pages

CentralCentral Semiconductor Corp

美国中央半导体

Central
2N2906

MediumCurrentGeneralPurposeAmplifiersandSwitches

文件:777.48 Kbytes Page:12 Pages

RAYTHEONRaytheon Company.

雷神

RAYTHEON
2N2906

PNPSILICONPLANARTRANSISTORS

文件:41.15 Kbytes Page:2 Pages

SIEMENS

Siemens Ltd

SIEMENS
2N2906

PNPSILICONTRANSISTOR

文件:531.8 Kbytes Page:2 Pages

CentralCentral Semiconductor Corp

美国中央半导体

Central
2N2906

SILICONPLANAREPITAXIALPNPTRANSISTOR

文件:239.36 Kbytes Page:3 Pages

SEME-LAB

Seme LAB

SEME-LAB

SILICONPLANAREPITAXIALPNPTRANSISTOR

•LowPower •HermeticTO-18Metalpackage. •IdeallysuitedforHighSpeedSwitchingandGeneralPurposeApplications •ScreeningOptionsAvailable

SEME-LAB

Seme LAB

SEME-LAB

PNPSILICONPLANARSWITCHINGTRANSISTORS

SwitchingAndLinearApplicationDCtoVHFAmplifierApplications

bocaBoca semiconductor corporation

博卡博卡半导体公司

boca

PNPswitchingtransistors

PNPswitchingtransistorinaTO-18metalpackage.NPNcomplements:2N2222and2N2222A.High-speedswitching,Driverapplicationsforindustrialservice. FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.60V). APPLICATIONS •High-speedswitching •Driverapplication

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

PNPSILICONGENERALPURPOSEAMPLIFIERSANDSWITCHES

PNPSILICONGENERALPURPOSEAMPLIFIERANDSWITCHES

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS

PNPSILICONPLANARTRANSISTORS

PNPSiliconPlanarTransistors

SIEMENS

Siemens Ltd

SIEMENS

ChipType2C2904AGeometry0600PolarityPNP

Chiptype2C2904AbySemicoaSemiconductorsprovidesperformancesimilartothesedevices. ProductSummary: APPLICATIONS:Designedforgeneralpurposeswitchingandamplifierapplications.

Semicoa

SEMICOA

Semicoa

SmallSignalTransistors

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N3011isasiliconepitaxialplanarNPNtransistordesignedforultrahighspeedsaturatedswitchingapplications. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美国中央半导体

Central

PNPSMALLSIGNALSILICONTRANSISTOR

RADIATIONHARDENEDPNPSILICONSWITCHINGTRANSISTOR QualifiedperMIL-PRF-19500/291

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

PNPSILICONPLANARSWITCHINGTRANSISTORS

SwitchingAndLinearApplicationDCtoVHFAmplifierApplications

CDIL

CDIL

CDIL

GENERALPURPOSEAMPLIFIERSTRANSISTORS

GENERALPURPOSEAMPLIFIERSTRANSISTORS The2N2906and2N2906AarePNPtransistorsmountedinTO-18metalpackage. Theyareintendedforhighspeedswitchingandgeneralpurposeapplications. NPNcomplementsare2N2221and2N2221A. CompliancetoRoHS

COMSET

Comset Semiconductor

COMSET

PNPSMALLSIGNALSILICONTRANSISTOR

RADIATIONHARDENEDPNPSILICONSWITCHINGTRANSISTOR QualifiedperMIL-PRF-19500/291

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

PNPSMALLSIGNALSILICONTRANSISTOR

RADIATIONHARDENEDPNPSILICONSWITCHINGTRANSISTOR QualifiedperMIL-PRF-19500/291

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

PNPSMALLSIGNALSILICONTRANSISTOR

RADIATIONHARDENEDPNPSILICONSWITCHINGTRANSISTOR QualifiedperMIL-PRF-19500/291

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

SiliconPNPTransistor

Description SemicoaSemiconductorsoffers: •ScreeningandprocessingperMIL-PRF-19500AppendixE •JANlevel(2N2906AUBJ) •JANTXlevel(2N2906AUBJX) •JANTXVlevel(2N2906AUBJV) •JANSlevel(2N2906AUBJS) •QCItotheapplicablelevel •100dievisualinspectionperMIL-STD-750method2

Semicoa

SEMICOA

Semicoa

EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,SWITCHING)

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •LowLeakageCurrent :ICEX=-50nA(Max.),IBL=-50nA(Max.) @VCE=-30V,VEB=-3V. •ExcellentDCCurrentGainLinearity. •LowSaturationVoltage :VCE(sat)=-0.4V(Max.)@IC=-50mA,IB=-5mA. •LowCollectorOutputCapacita

KECKEC CORPORATION

KEC株式会社

KEC

EPITAXIALPLANARPNPTRANSISTOR

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES ●LowLeakageCurrent :ICEX=-50nA(Max.),IBL=-50nA(Max.) @VCE=-30V,VEB=-3V. ●ExcellentDCCurrentGainLinearity. ●LowSaturationVoltage :VCE(sat)=-0.4V(Max.)@IC=-50mA,IB=-5mA. ●LowCollector

KECKEC CORPORATION

KEC株式会社

KEC

PNPSILICONTRANSISTOR

文件:531.8 Kbytes Page:2 Pages

CentralCentral Semiconductor Corp

美国中央半导体

Central

PNPSILICONTRANSISTOR

文件:531.8 Kbytes Page:2 Pages

CentralCentral Semiconductor Corp

美国中央半导体

Central

MediumCurrentGeneralPurposeAmplifiersandSwitches

文件:777.48 Kbytes Page:12 Pages

RAYTHEONRaytheon Company.

雷神

RAYTHEON

PNPSILICONTRANSISTOR

文件:531.8 Kbytes Page:2 Pages

CentralCentral Semiconductor Corp

美国中央半导体

Central

PNPSILICONTRANSISTOR

文件:531.8 Kbytes Page:2 Pages

CentralCentral Semiconductor Corp

美国中央半导体

Central

SiliconPNPTransistor

文件:212.47 Kbytes Page:2 Pages

Semicoa

SEMICOA

Semicoa

RADIATIONHARDENED

文件:105.73 Kbytes Page:6 Pages

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

SiliconPNPTransistor

文件:212.47 Kbytes Page:2 Pages

Semicoa

SEMICOA

Semicoa

RADIATIONHARDENED

文件:105.73 Kbytes Page:6 Pages

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

SILICONPLANAREPITAXIALPNPTRANSISTOR

文件:162.76 Kbytes Page:3 Pages

SEME-LAB

Seme LAB

SEME-LAB

DualBipolarPNPDevicesinahermeticallysealed

文件:15.06 Kbytes Page:1 Pages

SEME-LAB

Seme LAB

SEME-LAB

MediumCurrentGeneralPurposeAmplifiersandSwitches

文件:777.48 Kbytes Page:12 Pages

RAYTHEONRaytheon Company.

雷神

RAYTHEON

RADIATIONHARDENED

文件:105.73 Kbytes Page:6 Pages

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

RADIATIONHARDENED

文件:105.73 Kbytes Page:6 Pages

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

RADIATIONHARDENED

文件:105.73 Kbytes Page:6 Pages

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

RADIATIONHARDENED

文件:105.73 Kbytes Page:6 Pages

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

BipolarPNPDeviceinaHermeticallysealedLCC1

文件:14.88 Kbytes Page:1 Pages

SEME-LAB

Seme LAB

SEME-LAB

DualBipolarPNPDevicesinahermeticallysealed

文件:15.05 Kbytes Page:1 Pages

SEME-LAB

Seme LAB

SEME-LAB

LaserMarking

文件:21.86 Kbytes Page:1 Pages

KECKEC CORPORATION

KEC株式会社

KEC

LaserMarking

文件:21.86 Kbytes Page:1 Pages

KECKEC CORPORATION

KEC株式会社

KEC

MediumCurrentGeneralPurposeAmplifiersandSwitches

文件:777.48 Kbytes Page:12 Pages

RAYTHEONRaytheon Company.

雷神

RAYTHEON

EPITAXIALPLANARPNPTRANSISTOR

文件:782.96 Kbytes Page:4 Pages

KECKEC CORPORATION

KEC株式会社

KEC

2N2906产品属性

  • 类型

    描述

  • 型号

    2N2906

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR TO-18 PNP60V .6A .4W

更新时间:2024-4-27 10:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CGO
7214
1
CTR
05+
原厂原装
2551
只做全新原装真实现货供应
HGF
18+
TO-92
9862
全新原装现货/假一罚百!
23+
N/A
85100
正品授权货源可靠
MOT
2023+
CAN
50000
全新原装现货
ON
23+
TO-18
15000
正品原装货价格低qq:2987726803
Microchip Technology
23+
4-SMD,无引线
30000
晶体管-分立半导体产品-原装正品
ON
22+
CAN
10
正规渠道,只有原装!
TI
专业铁帽
CAN10
10000
原装铁帽专营,代理渠道量大可订货
ON
22+
CAN
25000
原装现货,价格优惠,假一罚十

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