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2N2906晶体管资料

  • 2N2906别名:2N2906三极管、2N2906晶体管、2N2906晶体三极管

  • 2N2906生产厂家:德国AEG公司_DIT_美国、法国费兰第有限公司_美国通

  • 2N2906制作材料:Si-PNP

  • 2N2906性质:通用型 (Uni)

  • 2N2906封装形式:直插封装

  • 2N2906极限工作电压:60V

  • 2N2906最大电流允许值:0.6A

  • 2N2906最大工作频率:<1MHZ或未知

  • 2N2906引脚数:3

  • 2N2906最大耗散功率:0.4W

  • 2N2906放大倍数:β=120

  • 2N2906图片代号:D-8

  • 2N2906vtest:60

  • 2N2906htest:999900

  • 2N2906atest:0.6

  • 2N2906wtest:0.4

  • 2N2906代换 2N2906用什么型号代替:BC528,BC638,BSW24,BSV47,BSV48,2N3485,3DK9D,

2N2906价格

参考价格:¥5.5884

型号:2N2906A 品牌:MULTICOMP 备注:这里有2N2906多少钱,2026年最近7天走势,今日出价,今日竞价,2N2906批发/采购报价,2N2906行情走势销售排行榜,2N2906报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2N2906

PNP switching transistors

PNP switching transistor in a TO-18 metal package. NPN complements: 2N2222 and 2N2222A. High-speed switching , Driver applications for industrial service. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • High-speed switching • Driver application

PHILIPS

飞利浦

2N2906

PNP SILICON PLANAR SWITCHING TRANSISTORS

PNP SILICON PLANAR SWITCHING TRANSISTORS Switching and Linear Application

CDIL

2N2906

Chip Type 2C2904A Geometry 0600 Polarity PNP

Chip type 2C2904A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

SEMICOA

2N2906

GENERAL PURPOSE AMPLIFIERS TRANSISTORS

GENERAL PURPOSE AMPLIFIERS TRANSISTORS The 2N2906 and 2N2906A are PNP transistors mounted in TO-18 metal package. They are intended for high speed switching and general purpose applications. NPN complements are 2N2221 and 2N2221A . Compliance to RoHS

COMSET

2N2906

PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES

PNP SILICON GENERAL PURPOSE AMPLIFIER AND SWITCHES

MICRO-ELECTRONICS

2N2906

20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A

GENERAL PURPOSE TRANSISTOR PNP SILICON

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N2906

1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS

1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS These transistor are silicon planar pitaxial pnp devices conforming to JEDEC TO-18, BS SO-132A and IEC C7/B11 outlines. They are designed for high speed saturated switching and general purpose application.

STMICROELECTRONICS

意法半导体

2N2906

PNP Silicon Switching -60V, -0.6A

This specification covers the performance requirements for PNP, silicon, switching 2N2906A and 2N2907A transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type, and two levels of product assurance (JANHC and JANKC) are provided for ea

MICROCHIP

微芯科技

2N2906

PNP SS GP AMP MED PWR TRANS.

ONSEMI

安森美半导体

2N2906

PNP SILICON PLANAR TRANSISTORS

文件:41.15 Kbytes Page:2 Pages

SIEMENS

西门子

2N2906

封装/外壳:TO-206AA,TO-18-3 金属罐 包装:管件 描述:TRANS PNP 40V 0.6A TO18 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

2N2906

封装/外壳:TO-206AA,TO-18-3 金属罐 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:SMALL-SIGNAL BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

2N2906

Bipolar Junction Transistors

TTELEC

2N2906

SILICON PLANAR EPITAXIAL PNP TRANSISTOR

文件:239.36 Kbytes Page:3 Pages

SEME-LAB

2N2906

Medium Current General Purpose Amplifiers and Switches

文件:777.48 Kbytes Page:12 Pages

RAYTHEON

雷神

2N2906

PNP SILICON TRANSISTOR

文件:531.8 Kbytes Page:2 Pages

CENTRAL

2N2906

PNP SILICON TRANSISTOR

文件:531.8 Kbytes Page:2 Pages

CENTRAL

PNP SILICON PLANAR SWITCHING TRANSISTORS

Switching And Linear Application DC to VHF Amplifier Applications

CDIL

Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

CENTRAL

GENERAL PURPOSE AMPLIFIERS TRANSISTORS

GENERAL PURPOSE AMPLIFIERS TRANSISTORS The 2N2906 and 2N2906A are PNP transistors mounted in TO-18 metal package. They are intended for high speed switching and general purpose applications. NPN complements are 2N2221 and 2N2221A . Compliance to RoHS

COMSET

PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES

PNP SILICON GENERAL PURPOSE AMPLIFIER AND SWITCHES

MICRO-ELECTRONICS

Chip Type 2C2904A Geometry 0600 Polarity PNP

Chip type 2C2904A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

SEMICOA

High Speed Switching Transistor

Features: • PNP silicon planar switching transistors • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics • Switching and linear application DC and VHF amplifier applications Description High Speed Switching Transistors

MULTICOMP

易络盟

PNP SILICON PLANAR SWITCHING TRANSISTORS

Switching And Linear Application DC to VHF Amplifier Applications

BOCA

博卡

PNP switching transistors

PNP switching transistor in a TO-18 metal package. NPN complements: 2N2222 and 2N2222A. High-speed switching , Driver applications for industrial service. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • High-speed switching • Driver application

PHILIPS

飞利浦

PNP SMALL SIGNAL SILICON TRANSISTOR

RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291

MICROSEMI

美高森美

SILICON PLANAR EPITAXIAL PNP TRANSISTOR

• Low Power • Hermetic TO-18 Metal package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available

SEME-LAB

PNP SILICON PLANAR TRANSISTORS

PNP Silicon Planar Transistors

SIEMENS

西门子

PNP SMALL SIGNAL SILICON TRANSISTOR

RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291

MICROSEMI

美高森美

PNP SMALL SIGNAL SILICON TRANSISTOR

RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291

MICROSEMI

美高森美

PNP SMALL SIGNAL SILICON TRANSISTOR

RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291

MICROSEMI

美高森美

Silicon PNP Transistor

Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N2906AUBJ) • JANTX level (2N2906AUBJX) • JANTXV level (2N2906AUBJV) • JANS level (2N2906AUBJS) • QCI to the applicable level • 100 die visual inspection per MIL-STD-750 method 2

SEMICOA

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. • Low Collector Output Capacita

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

EPITAXIAL PLANAR PNP TRANSISTOR

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ● Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. ● Excellent DC Current Gain Linearity. ● Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. ● Low Collector

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

PNP SILICON TRANSISTOR

文件:531.8 Kbytes Page:2 Pages

CENTRAL

PNP SILICON TRANSISTOR

文件:531.8 Kbytes Page:2 Pages

CENTRAL

PNP SILICON TRANSISTOR

文件:531.8 Kbytes Page:2 Pages

CENTRAL

PNP SILICON TRANSISTOR

文件:531.8 Kbytes Page:2 Pages

CENTRAL

Silicon PNP Transistor

文件:212.47 Kbytes Page:2 Pages

SEMICOA

RADIATION HARDENED

文件:105.73 Kbytes Page:6 Pages

MICROSEMI

美高森美

Medium Current General Purpose Amplifiers and Switches

文件:777.48 Kbytes Page:12 Pages

RAYTHEON

雷神

Silicon PNP Transistor

文件:212.47 Kbytes Page:2 Pages

SEMICOA

RADIATION HARDENED

文件:105.73 Kbytes Page:6 Pages

MICROSEMI

美高森美

SILICON PLANAR EPITAXIAL PNP TRANSISTOR

文件:162.76 Kbytes Page:3 Pages

SEME-LAB

Dual Bipolar PNP Devices in a hermetically sealed

文件:15.06 Kbytes Page:1 Pages

SEME-LAB

Medium Current General Purpose Amplifiers and Switches

文件:777.48 Kbytes Page:12 Pages

RAYTHEON

雷神

RADIATION HARDENED

文件:105.73 Kbytes Page:6 Pages

MICROSEMI

美高森美

RADIATION HARDENED

文件:105.73 Kbytes Page:6 Pages

MICROSEMI

美高森美

RADIATION HARDENED

文件:105.73 Kbytes Page:6 Pages

MICROSEMI

美高森美

RADIATION HARDENED

文件:105.73 Kbytes Page:6 Pages

MICROSEMI

美高森美

Bipolar PNP Device in a Hermetically sealed LCC1

文件:14.88 Kbytes Page:1 Pages

SEME-LAB

Dual Bipolar PNP Devices in a hermetically sealed

文件:15.05 Kbytes Page:1 Pages

SEME-LAB

Laser Marking

文件:21.86 Kbytes Page:1 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Laser Marking

文件:21.86 Kbytes Page:1 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Medium Current General Purpose Amplifiers and Switches

文件:777.48 Kbytes Page:12 Pages

RAYTHEON

雷神

EPITAXIAL PLANAR PNP TRANSISTOR

文件:782.96 Kbytes Page:4 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

2N2906产品属性

  • 类型

    描述

  • Case:

    TO-18

  • Configuration/ Description:

    PNP General Purpose Amplifier/Switch

  • Polarity:

    PNP

  • IC MAX:

    600mA

  • PD MAX:

    400mW

  • VCEO MAX:

    40V

  • hFE MIN:

    40

  • hFE MAX:

    120

  • @VCE:

    10V

  • VCE(SAT) MAX:

    400mV

  • @IC:

    150mA

  • @IB:

    15mA

  • Cob MAX:

    8pF

  • fT MIN:

    200MHz

更新时间:2026-7-31 13:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
KEC
25+
SOT-363
90000
全新原装现货
MOTOROLA
24+
CAN3
55000
原装现货假一罚十
Microchip
2511
TO-18
5904
电子元器件采购降本30%!原厂直采,砍掉中间差价
TI
专业铁帽
CAN10
10000
原装铁帽专营,代理渠道量大可订货
MOTOROLA/摩托罗拉
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
UNKNOWN
23+
10000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
26+
N/A
79000
一级代理-主营优势-实惠价格-不悔选择
MICROCHIP
23+
7300
专注配单,只做原装进口现货
ON
23+
CAN
10
正规渠道,只有原装!
Microchip
25+
TO-18
18000
全新、原装

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