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2N2906A晶体管资料
2N2906A别名：2N2906A三极管、2N2906A晶体管、2N2906A晶体三极管
2N2906A生产厂家：法国巴黎珊斯公司_德国电子元件股份公司_美国得克萨
2N2906A制作材料：Si-PNP
2N2906A性质：通用型 （Uni）
2N2906A封装形式：直插封装
2N2906A极限工作电压：60V
2N2906A最大电流允许值：0.6A
2N2906A最大工作频率：<1MHZ或未知
2N2906A引脚数：3
2N2906A最大耗散功率：0.4W
2N2906A放大倍数：β=120
2N2906A图片代号：D-8
2N2906Avtest：60
2N2906Ahtest：999900
- 2N2906Aatest：0.6
2N2906Awtest：0.4
2N2906A代换 2N2906A用什么型号代替：BC528,BC638,BSW24,BSV47,BSV48,2N3485A,2N4026,2N4027,2N4028,2N4029,3DK9D,
2N2906A价格
参考价格：￥5.5884
型号：2N2906A 品牌：MULTICOMP 备注：这里有2N2906A多少钱，2025年最近7天走势，今日出价，今日竞价，2N2906A批发/采购报价，2N2906A行情走势销售排行榜，2N2906A报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N2906A | PNP switching transistors PNP switching transistor in a TO-18 metal package. NPN complements: 2N2222 and 2N2222A. High-speed switching , Driver applications for industrial service. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • High-speed switching • Driver application | Philips 飞利浦 |   | |
2N2906A | Chip Type 2C2904A Geometry 0600 Polarity PNP Chip type 2C2904A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications. | Semicoa | | |
2N2906A | PNP SILICON PLANAR TRANSISTORS PNP Silicon Planar Transistors | SIEMENS 西门子 | | |
2N2906A | PNP SILICON PLANAR SWITCHING TRANSISTORS Switching And Linear Application DC to VHF Amplifier Applications | boca 博卡 | | |
2N2906A | PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES PNP SILICON GENERAL PURPOSE AMPLIFIER AND SWITCHES | MICRO-ELECTRONICS | | |
2N2906A | PNP SMALL SIGNAL SILICON TRANSISTOR RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 | Microsemi 美高森美 | | |
2N2906A | Small Signal Transistors DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER | Central | | |
2N2906A | SILICON PLANAR EPITAXIAL PNP TRANSISTOR • Low Power • Hermetic TO-18 Metal package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available | SEME-LAB | | |
2N2906A | GENERAL PURPOSE AMPLIFIERS TRANSISTORS GENERAL PURPOSE AMPLIFIERS TRANSISTORS The 2N2906 and 2N2906A are PNP transistors mounted in TO-18 metal package. They are intended for high speed switching and general purpose applications. NPN complements are 2N2221 and 2N2221A . Compliance to RoHS | COMSET | | |
2N2906A | PNP SILICON PLANAR SWITCHING TRANSISTORS Switching And Linear Application DC to VHF Amplifier Applications | CDIL | | |
2N2906A | PNP SILICON TRANSISTOR 文件：531.8 Kbytes Page：2 Pages | Central | | |
2N2906A | 封装/外壳：TO-206AA，TO-18-3 金属罐 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 0.6A TO18 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Microchip 微芯科技 | | |
2N2906A | 封装/外壳：TO-206AA，TO-18-3 金属罐 包装：管件 描述：TRANS PNP 40V 0.6A TO18 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
2N2906A | Transistor | COMSET | | |
2N2906A | Bipolar Junction Transistors | TTELEC | | |
2N2906A | PNP Silicon Switching -60V, -0.6A | Microchip 微芯科技 | | |
2N2906A | RADIATION HARDENED 文件：105.73 Kbytes Page：6 Pages | Microsemi 美高森美 | | |
2N2906A | Silicon PNP Transistor 文件：212.47 Kbytes Page：2 Pages | Semicoa | | |
2N2906A | PNP SILICON TRANSISTOR 文件：531.8 Kbytes Page：2 Pages | Central | | |
2N2906A | Medium Current General Purpose Amplifiers and Switches 文件：777.48 Kbytes Page：12 Pages | RAYTHEON 雷神 | | |
PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES PNP SILICON GENERAL PURPOSE AMPLIFIER AND SWITCHES | MICRO-ELECTRONICS | | ||
Chip Type 2C2904A Geometry 0600 Polarity PNP Chip type 2C2904A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications. | Semicoa | | ||
PNP switching transistors PNP switching transistor in a TO-18 metal package. NPN complements: 2N2222 and 2N2222A. High-speed switching , Driver applications for industrial service. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • High-speed switching • Driver application | Philips 飞利浦 | | ||
1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS 1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS These transistor are silicon planar pitaxial pnp devices conforming to JEDEC TO-18, BS SO-132A and IEC C7/B11 outlines. They are designed for high speed saturated switching and general purpose application. | STMICROELECTRONICS 意法半导体 | | ||
PNP SILICON PLANAR TRANSISTORS 文件：41.15 Kbytes Page：2 Pages | SIEMENS 西门子 | | ||
PNP SMALL SIGNAL SILICON TRANSISTOR RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 | Microsemi 美高森美 | | ||
PNP SMALL SIGNAL SILICON TRANSISTOR RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 | Microsemi 美高森美 | | ||
PNP SMALL SIGNAL SILICON TRANSISTOR RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 | Microsemi 美高森美 | | ||
Silicon PNP Transistor Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N2906AUBJ) • JANTX level (2N2906AUBJX) • JANTXV level (2N2906AUBJV) • JANS level (2N2906AUBJS) • QCI to the applicable level • 100 die visual inspection per MIL-STD-750 method 2 | Semicoa | | ||
Silicon PNP Transistor 文件：212.47 Kbytes Page：2 Pages | Semicoa | | ||
RADIATION HARDENED 文件：105.73 Kbytes Page：6 Pages | Microsemi 美高森美 | | ||
SILICON PLANAR EPITAXIAL PNP TRANSISTOR 文件：162.76 Kbytes Page：3 Pages | SEME-LAB | | ||
Dual Bipolar PNP Devices in a hermetically sealed 文件：15.06 Kbytes Page：1 Pages | SEME-LAB | | ||
Medium Current General Purpose Amplifiers and Switches 文件：777.48 Kbytes Page：12 Pages | RAYTHEON 雷神 | | ||
RADIATION HARDENED 文件：105.73 Kbytes Page：6 Pages | Microsemi 美高森美 | | ||
RADIATION HARDENED 文件：105.73 Kbytes Page：6 Pages | Microsemi 美高森美 | | ||
RADIATION HARDENED 文件：105.73 Kbytes Page：6 Pages | Microsemi 美高森美 | | ||
RADIATION HARDENED 文件：105.73 Kbytes Page：6 Pages | Microsemi 美高森美 | |
2N2906A产品属性
- 类型
描述
- 型号
2N2906A
- 功能描述
两极晶体管 - BJT PNP Gen Pur SS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Microchip |
23+ |
TO-18 |
10000 |
公司只做原装，可来电咨询 |
|||
24+ |
N/A |
79000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
MOTOROLA |
CAN |
2116 |
专营铁帽CANCDIP |
||||
ME美科 |
23+ |
TO-18 |
50000 |
全新原装正品现货,支持订货 |
|||
ME美科 |
22+ |
TO-18 |
20000 |
公司只有原装 品质保证 |
|||
UNKNOWN |
23+ |
10000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
MICROSEMI |
24+ |
SMD |
1680 |
MICROSEMI专营品牌进口原装现货假一赔十 |
|||
MOTOROLA/摩托罗拉 |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
MOT |
24+ |
CAN3 |
6540 |
原装现货/欢迎来电咨询 |
|||
MOT |
24+ |
CAN3 |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
2N2906A规格书下载地址
2N2906A参数引脚图相关
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2N2906A数据表相关新闻
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DdatasheetPDF页码索引
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