HIGH SPEED SWITCHES

The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current g

Chip Type 2C2222A Geometry 0400 Polarity NPN

Chip type 2C2222A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applica tions.

Type 2N2222A Geometry 0400 Polarity NPN

Product Summary: Chip type 2C2222A by Semicoa Semiconductors provides performance similar to these devices. Features: Medium power ratings APPLICATIONS: Designed for general purpose switching and amplifier applications.

NPN SILICON PLANAR TRANSISTORS

NPN Small Signal General Purpose Amplifiers

NPN Small Signal General Purpose Amplifiers NPN Small Signal General Purpose Amplifiers & Switches

NPN SILICON SWITCHING TRANSISTOR

NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255

Small Signal Transistors

Small Signal Transistors TO-18 Case (Continued)

SILICON PLANAR EPITAXIAL TRANSISTORS

SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2907 and 2N2907aA are PNP transistors mounted in TO-18 metal package with the collector connected to the case . They are primarily intended for high speed switching. NPN complements are 2N2222 and 2N2222A . Compliance to RoHS

SILICON PLANAR EPITAXIAL TRANSISTORS

SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2907 and 2N2907aA are PNP transistors mounted in TO-18 metal package with the collector connected to the case . They are primarily intended for high speed switching. NPN complements are 2N2222 and 2N2222A . Compliance to RoHS

NPN Plastic Encapsulated Transistor

FEATURE Complementary PNP type available 2N2907A

NPN switching transistors

FEATURES 1. High current (max. 800 mA) 2. Low voltage (max. 40 V). APPLICATIONS • Linear amplification and switching. DESCRIPTION NPN switching transistor in a TO-18 metal package.PNP complement: 2N2907A.

NPN SILICON PLANAR SWITCHING TRANSISTORS

Switching And Linear Application DC And VHF Amplifier Applications

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON TRANSISTOR

Small Signal Transistors TO-18 Case (Continued)

NPN SILICON PLANAR SWITCHING TRANSISTORS

NPN SILICON PLANAR SWITCHING TRANSISTORS Switching And Linear Application DC And VHF Amplifier Applications

Radiation Hardened NPN Silicon Switching Transistors

Features ● Qualified to MIL-PRF-19500/255 ● Levels JANSM-3K Rads (Si) JAN JANSD-10K Rads (Si) JANTX JANSP-30K Rads (Si) JANTXV JANSL-50K Rads (Si) JAN JANSR-100K Rads (Si) ● TO-18 (TO-206AA), Surface mount UA & UB Packages Applications ● Switching and Linear Applicatio

General Purpose NPN Transistors

Si-Epi-Planar Switching Transistors • Power dissipation 625 mW • Plastic case TO-92 • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Amplifiers & Switches

Amplifiers & Switches Bipolar: General Purpose

NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255

NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Surface Mount Quad NPN Transistor

Description: The 2N6989U (TX, TXV) is a hermeƟcally sealed, ceramic surface‐mount device, consisƟng of 4 silicon NPN transistors. The 20 pin ceramic package is ideal for designs where board space and device weight are important design consideraƟons. Typical screening lot acceptance test are per M

SWITCHING SILICON TRANSISTORS

SWITCHING SILICON TRANSISTORS The 2N2221-A and 2N2222-A are NPN transistors mounted in TO-18 metal case . They are designed for high-speed switching applications and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance

HIGH SPEED SWITCHES

The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current g

NPN SILICON PLANAR SWITCHING TRANSISTORS

NPN SILICON PLANAR SWITCHING TRANSISTORS Switching And Linear Application DC And VHF Amplifier Applications

NPN General Purpose Transistor

NPN General Purpose Transistor

TO-92 Plastic-Encapsulate Transistors

Feature complementary NPN Type available

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 50V(Min) · Low Noise and High Gain · High Power Gain APPLICATIONS · Switching regulator and high voltage switching applications · High speed DC-DC converter applications

High Speed Switching Transistor

Features •NPN Silicon Planar Switching Transistor •Fast switching devices exhibiting short turn-off and low saturation voltage characteristics •Switching and Linear application DC and VHF Amplifier applications

Silicon NPN Transistor Small Signal General Purpose Amplifier & Switch

文件：66.5 Kbytes Page：2 Pages

NPN Silicon Epitaxial Planar Transistor

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SILICON SWITCHING NPN TRANSISTOR

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封装/外壳：TO-206AA，TO-18-3 金属罐 包装：管件 描述：TRANS NPN 40V 0.8A TO18 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Bipolar Transistors

中等功率双极型晶体管

NPN Silicon Switching 50V, 0.8A

封装/外壳：TO-206AA，TO-18-3 金属罐 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 40V 0.6A TO18 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN transistor in a TO-92 Plastic Package

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TECHNICAL DATA SHEET NPN SILICON SWITCHING TRANSISTOR

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SILICON NPN TRANSISTORS

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High Speed Switching Transistor

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TO-92 Plastic-Encapsulate Transistors (NPN)

文件：141.04 Kbytes Page：2 Pages

RADIATION HARDENED

文件：144.21 Kbytes Page：7 Pages

HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR

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NPN SILICON SWITCHING TRANSISTOR

文件：142.92 Kbytes Page：6 Pages

HIGH SPEED SWITCHES

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HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR

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NPN Silicon Planar Transistors

NPN Small Signal General Purpose Amplifiers

NPN Small Signal General Purpose Amplifiers NPN Small Signal General Purpose Amplifiers & Switches

Chip Type 2C2222A Geometry 0400 Polarity NPN

Chip type 2C2222A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applica tions.

NPN switching transistors

FEATURES 1. High current (max. 800 mA) 2. Low voltage (max. 40 V). APPLICATIONS • Linear amplification and switching. DESCRIPTION NPN switching transistor in a TO-18 metal package.PNP complement: 2N2907A.

HIGH-SPEED SWITCHES

DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature use

SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc

SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc

SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc

SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc

NPN Switching Transistors

Features • High current (max.800mA) • Low voltage (max.40V) • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information)

SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc

SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc

SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc