SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc

NPN switching transistors

FEATURES 1. High current (max. 800 mA) 2. Low voltage (max. 40 V). APPLICATIONS • Linear amplification and switching. DESCRIPTION NPN switching transistor in a TO-18 metal package.PNP complement: 2N2907A.

HIGH-SPEED SWITCHES

DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature use

Chip Type 2C2222A Geometry 0400 Polarity NPN

Chip type 2C2222A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applica tions.

NPN Silicon Planar Transistors

NPN Small Signal General Purpose Amplifiers

NPN Small Signal General Purpose Amplifiers NPN Small Signal General Purpose Amplifiers & Switches

SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc

SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc

SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc

SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc

SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc

SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc

DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

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DUAL HIGH SPEED, MEDIUM POWER

文件：36.95 Kbytes Page：2 Pages

Bipolar Junction Transistors

DUAL HIGH SPEED, MEDIUM POWER

文件：36.95 Kbytes Page：2 Pages