SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc

SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc

SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc

SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc

SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc

SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc

NPN switching transistors

FEATURES 1. High current (max. 800 mA) 2. Low voltage (max. 40 V). APPLICATIONS • Linear amplification and switching. DESCRIPTION NPN switching transistor in a TO-18 metal package.PNP complement: 2N2907A.

Amplifier Transistors

Amplifier Transistors NPN Silicon

Amplifier Transistors

Amplifier Transistors NPN Silicon

Amplifier Transistors(NPN Silicon)

Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available*

Amplifier Transistors(NPN Silicon)

Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available*