位置：首页 > IC中文资料 > 2ED2181S06F
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2ED2181S06F | 650 V high-side and low-side gate driver with integrated bootstrap diode Description The 2ED2181(4)S06F(J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negat | Infineon 英飞凌 |   | |
2ED2181S06F | 650 V half-bridge gate driver with integrated bootstrap diode Description The 2ED2182(4)S06F(J) is a half-bridge high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational lo | Infineon 英飞凌 | | |
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC HALF BRIDGE GATE DRIVER 650V 集成电路（IC） 栅极驱动器 | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
SOP-8 |
6825 |
百分百原装正品,可原型号开票 |
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Infine |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
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INFINEON |
23+ |
SOP8 |
10000 |
全新、原装 |
|||
INFINEON |
22+ |
NA |
30000 |
原装正品支持实单 |
|||
Infineon/英飞凌 |
21+ |
DSO-8 |
6820 |
只做原装,质量保证 |
|||
Infineon(英飞凌) |
24+ |
SOP-8 |
2669 |
特价优势库存质量保证稳定供货 |
|||
INFINEON |
24+ |
PG-DSO-8 |
15000 |
原装原标原盒 给价就出 全网最低 |
|||
INFINEON/英飞凌 |
25+ |
原厂封装 |
10280 |
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力! |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
Infineon/英飞凌 |
2022+ |
DSO-8 |
48000 |
只做原装,原装,假一罚十 |
2ED2181S06F规格书下载地址
2ED2181S06F参数引脚图相关
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DdatasheetPDF页码索引
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