1200 V half-bridge gate driver with integrated bootstrap diode and OCP

Features • Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology Floating channel designed for bootstrap operation • Maximum bootstrap voltage (VB node) of + 1225 V • Operating voltages (VS node) upto + 1200 V • Negative VS transient voltage immunity of 100 V With repetive 700 ns

1200 V half-bridge gate driver with Active Miller Clamp and Short Circuit Clamp

Features  Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology Floating channel designed for bootstrap operation  Maximum bootstrap voltage (VB node) of + 1225 V  Operating voltages (VS node) upto + 1200 V  Negative VS transient voltage immunity of 100 V With repetitive 700

1200 V half-bridge gate driver with integrated bootstrap diode and OCP

Features • Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology Floating channel designed for bootstrap operation • Maximum bootstrap voltage (VB node) of + 1225 V • Operating voltages (VS node) upto + 1200 V • Negative VS transient voltage immunity of 100 V With repetive 700 ns