位置:2ED1322S12M > 2ED1322S12M详情

2ED1322S12M中文资料

厂家型号

2ED1322S12M

文件大小

1101.02Kbytes

页面数量

34

功能描述

1200 V half-bridge gate driver with Active Miller Clamp and Short Circuit Clamp

数据手册

下载地址一下载地址二到原厂下载

生产厂商

INFINEON

2ED1322S12M数据手册规格书PDF详情

Features

 Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology

Floating

channel designed for bootstrap operation

 Maximum bootstrap voltage (VB node) of + 1225 V

 Operating voltages (VS node) upto + 1200 V

 Negative VS transient voltage immunity of 100 V

With

repetitive 700 ns pulses

 2.3 A / 2.3 A peak output source / sink current capability

 Integrated ultra-fast over-current protection (OCP)

±

5% high accuracy reference threshold

Less

than 1 us over-current sense to output shutdown

 Integrated Active Miller Clamp (AMC) with 2 A sink current capability

 Integrated Short Circuit Clamp (SCC) function

 Integrated ultra-fast, low resistance bootstrap diode

 Integrated dead-time and shoot-through prevention logic (2ED1324S12P)

 Enable, Fault, and programmable Fault clear RFE input

 Logic operational up to –8 V on VS Pin

 Independent per channel undervoltage lockout (UVLO)

 25 V VCC supply voltage (maximum)

 Separate Logic (VSS) and output ground (COM)

 Greater than 5 mm clearance / creepage

 2 kV HBM ESD capability

更新时间:2025-10-23 18:43:00
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Infineon(英飞凌)
24+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品