■ High performance Read-While-Write/Erase

— 85 ns initial access

— 52 MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode

— 25 ns asynchronous-page mode

— 4-, 8-, 16-, and continuous-word burst mode

— Burst suspend

— Programmable WAIT configuration

— Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)

— 1.8 V low-power buffered programming at 7 µs/byte (Typ)

■ Architecture

— Asymmetrically-blocked architecture

— Multiple partitions: 8-Mbit: 128- Mbit devices; 16-Mbit: 256-Mbit devices

— Four 16-Kword parameter blocks: top or bottom configurations

— 64-Kword main blocks

— Dual-operation: Read-While-Write (RWW) or Read-While-Erase (RWE)

— Status register for partition and device status

■ Density and Packaging

— 128- and 256-Mbit density in VF BGA packages

— 128/0 and 256/0 Density in SCSP

— 16-bit wide data bus

■ Power

— VCC (core) = 1.7 V - 2.0 V

— VCCQ (I/O) = 2.2 V - 3.3 V

— Standby current: 30 µA (Typ) for 256-Mbit

— 4-Word synchronous read current: 16 mA (Typ) at 52 MHz

— Automatic Power Savings mode

■ Security

— OTP space: 64 unique factory device identifier bits; 64 user-programmable OTP bits; Additional 2048 user-programmable OTP bits

— Absolute write protection: VPP = GND

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

■ Software

— 20 µs (Typ) program suspend

— 20 µs (Typ) erase suspend

— Numonyx™ Flash Data Integrator (Numonyx™ FDI) optimized

■ Quality and Reliability

— Expanded temperature: –25° C to +85° C

— Minimum 100,000 erase cycles per block

— Intel ETOX* VIII process technology (0.13 µm)