RF Power Field Effect Transistor

880 MHz, 10 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applica

N-Channel Enhancement-Mode Lateral MOSFETs

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RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

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Airfast RF Power LDMOS Transistor

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：CAP TRIMMER 0.8-8PF 500V SMD 电容器 微调器，可变电容器

可调电容

N-Channel Enhancement-Mode Lateral MOSFETs

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