25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

Trans MOSFET N-CH 60V 25A 3-Pin(3+Tab) TO-220AB

N-Channel 60 V (D-S) MOSFET

文件：1.31323 Mbytes Page：9 Pages

POWER MOS FIELD EFFECT TRANSISTORS

文件：235.65 Kbytes Page：4 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

DESCRIPTION The UTC 25N06 is an N-channel enhancement mode power MOSFET, which provides low gate charge, avalanche rugged technology, and so on. The UTC 25N06 is universally applied in DC-DC & DC-AC converters, motor control, high current, high speed switching, solenoid and relay drivers, re

Fast Switching

• FEATURES • Drain Current ID= 25A@ TC=25℃ • Drain Source Voltage : VDSS= 60V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.065Ω(Max) • Fast Switching • APPLICATIONS • Switching regulators • Switching converters,motor drivers,relay drivers

60V N-Channel Power Mosfet

Features VDS = 60V,ID =25A RDS(ON),23 mΩ(Typ) @ VGS =10V RDS(ON),30 mΩ(Typ) @ VGS =4.5V Fast Switching Low ON Resistance(Rdson≤29mΩ) Low Gate Charge Low Reverse transfer capacitances 100 Single Pulse avalanche energy Test

60V N-Channel Power Mosfet

General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 60V,ID =25A RDS(ON),23 mΩ(Typ) @ VGS =10V RDS(ON),30 mΩ(Typ) @ VGS =4.5V Fast Swit

25A, 60V N-CHANNEL POWER MOSFET

文件：186.89 Kbytes Page：6 Pages