N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGSringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applications

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGSringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Applications

N-CHANNEL SILICON POWER MOSFETFeatures

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGSringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Applications

N-CHANNEL SILICON POWER MOSFET

FMH23N50E, Marking : 23N50E Features 1. Maintains both low power loss and low noise 2. Lower RDS(on) characteristic 3. More controllable switching dv/dt by gate resistance 4. Smaller VGSringing waveform during switching 5. Narrow band of the gate threshold voltage (3.0±0.5V)

Super FAP-E3 series / N-CHANNEL SILICON POWER MOSFET

FMH23N50E,  Marking : 23N50E 1. Maintains both low power loss and low noise\n2. Lower RDS(on) characteristic\n3. More controllable switching dv/dt by gate resistance\n4. Smaller VGSringing waveform during switching\n5. Narrow band of the gate threshold voltage (3.0±0.5V)\n6. High avalanche durability;

N-CHANNEL SILICON POWER MOSFETFeatures

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGSringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Applications

Power MOSFET

FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-free Availab

Power MOSFET(Vdss=500V, Rds(on)=0.190ohm, Id=23A)

Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications • Lower Gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher Gate voltage threshold offers improved noise immunity Application

Power MOSFET

FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-free Availab

Power MOSFET

FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-free Availab