Power MOSFET(Vdss=500V, Rds(on)=0.190ohm, Id=23A)

Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications • Lower Gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher Gate voltage threshold offers improved noise immunity Application

Power MOSFET

FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-free Availab

iscN-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =0.235Ω (MAX) • Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Power MOSFET

FEATURES • Superfast body diode eliminates the need for external diodes in ZVS applications • Lower gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher gate voltage threshold offers improved noise immunity • Material categoriza

Power MOSFET

文件：223.5 Kbytes Page：11 Pages

Power MOSFET

文件：200.94 Kbytes Page：9 Pages

Power MOSFET

FEATURES • Superfast body diode eliminates the need for external diodes in ZVS applications • Lower gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher gate voltage threshold offers improved noise immunity • Material categoriza

Power MOSFET

FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-free Availab

HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190廓 , Trr typ. = 170ns , ID = 23A )

Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications • Lower Gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher Gate voltage threshold offers improved noise immunity • Lead-Free

Power MOSFET

文件：200.94 Kbytes Page：9 Pages

Power MOSFET

文件：223.5 Kbytes Page：11 Pages

Power MOSFET

文件：223.5 Kbytes Page：11 Pages

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGSringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applications

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGSringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Applications

N-CHANNEL SILICON POWER MOSFETFeatures

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGSringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Applications

N-CHANNEL SILICON POWER MOSFET

FMH23N50E, Marking : 23N50E Features 1. Maintains both low power loss and low noise 2. Lower RDS(on) characteristic 3. More controllable switching dv/dt by gate resistance 4. Smaller VGSringing waveform during switching 5. Narrow band of the gate threshold voltage (3.0±0.5V)

isc N-Channel MOSFET Transistor

文件：345.38 Kbytes Page：2 Pages