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IRFP23N50L价格
参考价格：￥17.4590
型号：IRFP23N50LPBF 品牌：Vishay 备注：这里有IRFP23N50L多少钱，2025年最近7天走势，今日出价，今日竞价，IRFP23N50L批发/采购报价，IRFP23N50L行情走势销售排行榜，IRFP23N50L报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFP23N50L | Power MOSFET(Vdss=500V, Rds(on)=0.190ohm, Id=23A) Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications • Lower Gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher Gate voltage threshold offers improved noise immunity Application | IRF |   | |
IRFP23N50L | Power MOSFET FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-free Availab | VishayVishay Siliconix 威世科技 | | |
IRFP23N50L | iscN-Channel MOSFET Transistor • DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =0.235Ω (MAX) • Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
IRFP23N50L | Power MOSFET FEATURES • Superfast body diode eliminates the need for external diodes in ZVS applications • Lower gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher gate voltage threshold offers improved noise immunity • Material categoriza | VishayVishay Siliconix 威世科技 | | |
IRFP23N50L | Power MOSFET 文件：223.5 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | |
IRFP23N50L | Power MOSFET 文件：200.94 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | |
IRFP23N50L | Power MOSFET | VishayVishay Siliconix 威世科技 | | |
IRFP23N50L | SMPS MOSFET | Infineon 英飞凌 | | |
Power MOSFET FEATURES • Superfast body diode eliminates the need for external diodes in ZVS applications • Lower gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher gate voltage threshold offers improved noise immunity • Material categoriza | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-free Availab | VishayVishay Siliconix 威世科技 | | ||
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190廓 , Trr typ. = 170ns , ID = 23A ) Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications • Lower Gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher Gate voltage threshold offers improved noise immunity • Lead-Free | IRF | | ||
Power MOSFET 文件：200.94 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：223.5 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：223.5 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | ||
N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGSringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applications | Fuji 富士通 | | ||
N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGSringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Applications | Fuji 富士通 | | ||
N-CHANNEL SILICON POWER MOSFETFeatures Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGSringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Applications | Fuji 富士通 | | ||
N-CHANNEL SILICON POWER MOSFET FMH23N50E, Marking : 23N50E Features 1. Maintains both low power loss and low noise 2. Lower RDS(on) characteristic 3. More controllable switching dv/dt by gate resistance 4. Smaller VGSringing waveform during switching 5. Narrow band of the gate threshold voltage (3.0±0.5V) | Fuji 富士通 | | ||
isc N-Channel MOSFET Transistor 文件：345.38 Kbytes Page：2 Pages | ISC 无锡固电 | |
IRFP23N50L产品属性
- 类型
描述
- 型号
IRFP23N50L
- 功能描述
MOSFET N-Chan 500V 23 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
13133 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
NEW |
TO-247 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
IR |
24+ |
TO-247AC |
8866 |
||||
IR |
25+ |
管3P |
18000 |
原厂直接发货进口原装 |
|||
VISHAY(威世) |
24+ |
TO-247 |
7810 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
24+ |
TO-247 |
22055 |
郑重承诺只做原装进口现货 |
|||
VISHAY |
23+ |
TO-247 |
10828 |
全新原装正品现货可开票 |
|||
IR |
23+ |
TO-3P |
5000 |
原装正品,假一罚十 |
|||
IR |
18+ |
TO-247A |
85600 |
保证进口原装可开17%增值税发票 |
IRFP23N50L芯片相关品牌
IRFP23N50L规格书下载地址
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IRFP23N50L数据表相关新闻
IRFP23N50LPBF
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DdatasheetPDF页码索引
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