位置：首页 > IC中文资料第2155页 > IRFP23N50L
IRFP23N50L价格
参考价格：￥17.4590
型号：IRFP23N50LPBF 品牌：Vishay 备注：这里有IRFP23N50L多少钱，2025年最近7天走势，今日出价，今日竞价，IRFP23N50L批发/采购报价，IRFP23N50L行情走势销售排行榜，IRFP23N50L报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFP23N50L | Power MOSFET(Vdss=500V, Rds(on)=0.190ohm, Id=23A) Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications • Lower Gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher Gate voltage threshold offers improved noise immunity Application | IRF |   | |
IRFP23N50L | Power MOSFET FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-free Availab | VishayVishay Siliconix 威世威世科技公司 | | |
IRFP23N50L | iscN-Channel MOSFET Transistor • DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =0.235Ω (MAX) • Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
IRFP23N50L | Power MOSFET FEATURES • Superfast body diode eliminates the need for external diodes in ZVS applications • Lower gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher gate voltage threshold offers improved noise immunity • Material categoriza | VishayVishay Siliconix 威世威世科技公司 | | |
IRFP23N50L | Power MOSFET 文件：223.5 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRFP23N50L | Power MOSFET 文件：200.94 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRFP23N50L | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
IRFP23N50L | SMPS MOSFET | Infineon 英飞凌 | | |
Power MOSFET FEATURES • Superfast body diode eliminates the need for external diodes in ZVS applications • Lower gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher gate voltage threshold offers improved noise immunity • Material categoriza | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-free Availab | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190廓 , Trr typ. = 170ns , ID = 23A ) Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications • Lower Gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher Gate voltage threshold offers improved noise immunity • Lead-Free | IRF | | ||
Power MOSFET 文件：200.94 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：223.5 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：223.5 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGSringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applications | Fuji 富士通 | | ||
N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGSringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Applications | Fuji 富士通 | | ||
N-CHANNEL SILICON POWER MOSFETFeatures Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGSringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Applications | Fuji 富士通 | | ||
N-CHANNEL SILICON POWER MOSFET FMH23N50E, Marking : 23N50E Features 1. Maintains both low power loss and low noise 2. Lower RDS(on) characteristic 3. More controllable switching dv/dt by gate resistance 4. Smaller VGSringing waveform during switching 5. Narrow band of the gate threshold voltage (3.0±0.5V) | Fuji 富士通 | | ||
isc N-Channel MOSFET Transistor 文件：345.38 Kbytes Page：2 Pages | ISC 无锡固电 | |
IRFP23N50L产品属性
- 类型
描述
- 型号
IRFP23N50L
- 功能描述
MOSFET N-Chan 500V 23 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
1922+ |
TO-247 |
210 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
25+ |
管3P |
18000 |
原厂直接发货进口原装 |
|||
VISHAY |
2021 |
TO-247 |
3000 |
全新原装公司现货
|
|||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
IR |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
IR |
22+ |
TO-247 |
8135 |
原装正品，实单请联系 |
|||
IR |
24+ |
TO-247AC |
8866 |
||||
VISHAY |
23+ |
TO-247 |
10828 |
全新原装正品现货可开票 |
|||
VISHAY(威世) |
24+ |
TO-247 |
7810 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
TO-3 |
211641 |
一级代理原装正品,价格优势,支持实单! |
IRFP23N50L规格书下载地址
IRFP23N50L参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRFP352
- IRFP351
- IRFP350
- IRFP344
- IRFP340
- IRFP2907PBF
- IRFP27N60KPBF
- IRFP26N60LPBF
- IRFP264PBF
- IRFP264
- IRFP260PBF
- IRFP260NPBF
- IRFP260NHR
- IRFP260MPBF
- IRFP260
- IRFP257
- IRFP256
- IRFP255
- IRFP254PBF
- IRFP254
- IRFP253
- IRFP252
- IRFP251
- IRFP250PBF
- IRFP250NPBF
- IRFP250MPBF
- IRFP250
- IRFP247
- IRFP246
- IRFP245
- IRFP244PBF
- IRFP244
- IRFP240PBF
- IRFP240
- IRFP23N50LPBF
- IRFP22N60KPBF
- IRFP22N50APBF
- IRFP21N60LPBF
- IRFP17N50LPBF
- IRFP153
- IRFP152
- IRFP151
- IRFP150PBF
- IRFP150NPBF
- IRFP150MPBF
- IRFP150A
- IRFP150
- IRFP140PBF
- IRFP140NPBF
- IRFP1405PBF
- IRFP140
- IRFP133
- IRFP132
- IRFP131
- IRFP130
- IRFP064PBF
- IRFP064NPBF
- IRFP064
- IRFP054PBF
- IRFP054NPBF
- IRFP054
- IRFP048RPBF
- IRFP048PBF
- IRFP048NPBF
- IRFP048
- IRFP044
- IRFNG50
- IRFNG40
- IRFN450
- IRFN440
- IRFN350
- IRFN340
- IRFN250
IRFP23N50L数据表相关新闻
IRFP23N50LPBF
进口代理
2025-4-2IRFP064NPBF
IRFP064NPBF
2023-6-3IRFP140是一款性能优异的MOSFET晶体管，具有低导通电阻、高开关速度、高电压承受能力等特点，广泛应用于工业、消费电子、通信、电源等领域。
IRFP140是一款性能优异的MOSFET晶体管，具有低导通电阻、高开关速度、高电压承受能力等特点，广泛应用于工业、消费电子、通信、电源等领域。
2023-5-27IRFP260MPBF 原装正品现货 可追溯原厂 可含税出
IRFP260MPBF 原装正品现货 可追溯原厂 可含税出
2020-11-20IRFM360深圳市唯有度科技有限公司
IRFM360原装正品热卖，价格优惠！欢迎新老客户来电咨询采购！
2019-11-4IRFP260MPBF公司原装现货/随时可以发货
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-26
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
