IRFP23N50LPBF价格

参考价格:¥17.4590

型号:IRFP23N50LPBF 品牌:Vishay 备注:这里有IRFP23N50LPBF多少钱,2026年最近7天走势,今日出价,今日竞价,IRFP23N50LPBF批发/采购报价,IRFP23N50LPBF行情走势销售排行榜,IRFP23N50LPBF报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFP23N50LPBF

Power MOSFET

FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-free Availab

VISHAYVishay Siliconix

威世威世科技公司

IRFP23N50LPBF

HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190廓 , Trr typ. = 170ns , ID = 23A )

Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications • Lower Gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher Gate voltage threshold offers improved noise immunity • Lead-Free

IRF

IRFP23N50LPBF

Power MOSFET

文件:223.5 Kbytes Page:11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-free Availab

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=500V, Rds(on)=0.190ohm, Id=23A)

Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications • Lower Gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher Gate voltage threshold offers improved noise immunity Application

IRF

N-CHANNEL SILICON POWER MOSFETFeatures

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGSringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Applications

FUJI

富士通

Power MOSFET

FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-free Availab

VISHAYVishay Siliconix

威世威世科技公司

IRFP23N50LPBF产品属性

  • 类型

    描述

  • 型号

    IRFP23N50LPBF

  • 功能描述

    MOSFET N-Chan 500V 23 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-17 13:34:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
20+
SMD
880000
明嘉莱只做原装正品现货
VISHAY
23+
TO-247
50000
全新原装正品现货,支持订货
VISHAY
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
VIS
2023+
SMD
5000
全新原装正品,优势价格
VISHAY
23+
TO-247
10828
全新原装正品现货可开票
VISHAY/威世
21+
NA
12820
只做原装,质量保证
VISHAY
23+
TO-247-3
50000
原装正品 支持实单
VISHAY/威世通
20+
na
65790
原装优势主营型号-可开原型号增税票
VISHAY
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
VISHAY
24+
TO-247
9000
只做原装正品 有挂有货 假一赔十

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