Power MOSFET

FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-free Availab

HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190廓 , Trr typ. = 170ns , ID = 23A )

Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications • Lower Gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher Gate voltage threshold offers improved noise immunity • Lead-Free

Power MOSFET

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N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGSringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applications

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGSringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Applications

N-CHANNEL SILICON POWER MOSFETFeatures

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGSringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Applications

N-CHANNEL SILICON POWER MOSFET

FMH23N50E, Marking : 23N50E Features 1. Maintains both low power loss and low noise 2. Lower RDS(on) characteristic 3. More controllable switching dv/dt by gate resistance 4. Smaller VGSringing waveform during switching 5. Narrow band of the gate threshold voltage (3.0±0.5V)

isc N-Channel MOSFET Transistor

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