丝印代码：21009BFZ12；High Voltage Input Precision, Low Noise FGA™ Voltage References

Features • Output Voltages . . . . . . . .1.250V, 2.500V, 4.096V, 5.000V • Initial Accuracy . . . . . . . . . . . . . .±0.5mV, ±1.0mV, ±2.0mV • Input Voltage Range. . . . . . . . . . . . . . . . . . . 3.5V to 16.5V • Output Voltage Noise . . . . . . . . .4.5μVP-P (0.1Hz to 10Hz) • Supply Curr

丝印代码：21009BFZ25；High Voltage Input Precision, Low Noise FGA™ Voltage References

Features • Output Voltages . . . . . . . .1.250V, 2.500V, 4.096V, 5.000V • Initial Accuracy . . . . . . . . . . . . . .±0.5mV, ±1.0mV, ±2.0mV • Input Voltage Range. . . . . . . . . . . . . . . . . . . 3.5V to 16.5V • Output Voltage Noise . . . . . . . . .4.5μVP-P (0.1Hz to 10Hz) • Supply Curr

丝印代码：21009BFZ41；High Voltage Input Precision, Low Noise FGA™ Voltage References

Features • Output Voltages . . . . . . . .1.250V, 2.500V, 4.096V, 5.000V • Initial Accuracy . . . . . . . . . . . . . .±0.5mV, ±1.0mV, ±2.0mV • Input Voltage Range. . . . . . . . . . . . . . . . . . . 3.5V to 16.5V • Output Voltage Noise . . . . . . . . .4.5μVP-P (0.1Hz to 10Hz) • Supply Curr

丝印代码：21009BFZ50；High Voltage Input Precision, Low Noise FGA™ Voltage References

Features • Output Voltages . . . . . . . .1.250V, 2.500V, 4.096V, 5.000V • Initial Accuracy . . . . . . . . . . . . . .±0.5mV, ±1.0mV, ±2.0mV • Input Voltage Range. . . . . . . . . . . . . . . . . . . 3.5V to 16.5V • Output Voltage Noise . . . . . . . . .4.5μVP-P (0.1Hz to 10Hz) • Supply Curr

ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY

FEATURES • Compact slim body saves space Thanks to the small surface area of 5.7 mm × 10.6 mm .224 inch × .417 inch and low height of 9.0 mm .354 inch, the pack aging density can be increased to allow for much smaller designs. • Outstanding surge resistance. Surge withstand between open contac

ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY

FEATURES • Compact slim body saves space Thanks to the small surface area of 5.7 mm × 10.6 mm .224 inch × .417 inch and low height of 9.0 mm .354 inch, the pack aging density can be increased to allow for much smaller designs. • Outstanding surge resistance. Surge withstand between open contac

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. FEATURES • Diffused emitter ballasting resistors • Self-aligned process entirely ion implanted and gold sandwich metallization • optimum temp

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. FEATURES • Diffused emitter ballasting resistors • Self-aligned process entirely ion implanted and gold sandwich metallization • optimum temp

HIGH SENSITIVITY RELAY WITH GUARANTEED LOW LEVEL SWITCHING CAPACITY

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