High Sensitivity, with 100mW nominal operating power, in a compact and space saving case

FEATURES 1. Compact slim body saves space Thanks to the small surface area of 5.7 mm × 10.6 mm .224 inch × .417 inch and low height of 9.0 mm .354 inch, the packaging density can be increased to allow for much smaller designs. 2. High sensitivity single side stable type (Nominal operatin

ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY

FEATURES • Compact slim body saves space Thanks to the small surface area of 5.7 mm × 10.6 mm .224 inch × .417 inch and low height of 9.0 mm .354 inch, the pack aging density can be increased to allow for much smaller designs. • Outstanding surge resistance. Surge withstand between open contac

包装：管件 描述：RELAY TELECOM DPDT 1A 9VDC 继电器 信号继电器，高达 2 A

包装：管件 描述：RELAY TELECOM DPDT 1A 9VDC 继电器 信号继电器，高达 2 A

信号继电器

ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY

FEATURES • Compact slim body saves space Thanks to the small surface area of 5.7 mm × 10.6 mm .224 inch × .417 inch and low height of 9.0 mm .354 inch, the pack aging density can be increased to allow for much smaller designs. • Outstanding surge resistance. Surge withstand between open contac

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. FEATURES • Diffused emitter ballasting resistors • Self-aligned process entirely ion implanted and gold sandwich metallization • optimum temp

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. FEATURES • Diffused emitter ballasting resistors • Self-aligned process entirely ion implanted and gold sandwich metallization • optimum temp

HIGH SENSITIVITY RELAY WITH GUARANTEED LOW LEVEL SWITCHING CAPACITY

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