400V, 23A N-CHANNEL POWER MOSFET

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SMARTDISCRETES Internally Clamped, N-Channel IGBT

SMARTDISCRETES Internally Clamped, N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate–C

20A, 400V N-CHANNEL POWER MOSFET

The UTC 20N40K-MT is an N-channel mode power MOSFETusing UTC’s advanced technology to provide customers with planarstripe and DMOS technology. This technology allows a minimumon-state resistance and superior switching performance. It also canwithstand high energy pulse in the avalanche and commutati • RDS(ON) < 0.22Ω @ VGS=10V\n• High Switching Speed;

400V, 23A N-CHANNEL POWER MOSFET

文件：201.28 Kbytes Page：6 Pages

20A竊?00V N-CHANNEL MOSFET

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N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

文件：192.68 Kbytes Page：5 Pages

N-CHANNEL POWER MOSFET

文件：192.68 Kbytes Page：5 Pages

400V, 23A N-CHANNEL POWER MOSFET

文件：201.28 Kbytes Page：6 Pages

20A, 400V, 0.216 Ohm, N-Channel SMPS Power MOSFET

Features • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced r DS(ON) • Reduced Miller Capacitance and Low Input Capacitance • Improved Switching Speed with Low EMI • 175°C Rated Junction Temperature pp Switch Mo

400V N-Channel MOSFET

Features • 19.5A, 400V, RDS(on) = 0.22 Ω @ VGS = 10 V • Low gate charge ( typical 60 nC) • Low Crss ( typical 45 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

SMARTDISCRETES Internally Clamped, N-Channel IGBT

SMARTDISCRETES Internally Clamped, N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate–C

SMARTDISCRETES Internally Clamped, N-Channel IGBT

SMARTDISCRETES Internally Clamped, N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate–C

General Description

General Description Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applica