丝印代码：208E；TRF1208-EP Enhanced Product, Near-DC to 11GHz, Fully Differential RF Amplifier

1 Features • Vendor item drawing number: VID V62/25645 • High reliability enhanced product – Controlled baseline – One assembly and test site – One fabrication site – Extended product life cycle – Product traceability – Lead-free construction – Extended temperature range: –55°C to +125°C

丝印代码：208E；TRF1208-EP Enhanced Product, Near-DC to 11GHz, Fully Differential RF Amplifier

1 Features • Vendor item drawing number: VID V62/25645 • High reliability enhanced product – Controlled baseline – One assembly and test site – One fabrication site – Extended product life cycle – Product traceability – Lead-free construction – Extended temperature range: –55°C to +125°C

丝印代码：208E；TRF1208-EP Enhanced Product, Near-DC to 11GHz, Fully Differential RF Amplifier

1 Features • Vendor item drawing number: VID V62/25645 • High reliability enhanced product – Controlled baseline – One assembly and test site – One fabrication site – Extended product life cycle – Product traceability – Lead-free construction – Extended temperature range: –55°C to +125°C

丝印代码：208E；TRF1208-EP Enhanced Product, Near-DC to 11GHz, Fully Differential RF Amplifier

1 Features • Vendor item drawing number: VID V62/25645 • High reliability enhanced product – Controlled baseline – One assembly and test site – One fabrication site – Extended product life cycle – Product traceability – Lead-free construction – Extended temperature range: –55°C to +125°C

POWER TRANSISTORS(5.0A,1300-1500V,55W)

5.0 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 55 WATTS

5.0 AMPERES NPN SILICON POWER TRANSISTOR 700 VOLTS

Horizontal Deflection Transistor . . . designed for use in televisions. • Collector–Emitter Voltages VCES 1500 Volts • Fast Switching — 400 ns Typical Fall Time • Low Thermal Resistance 1°C/W Increased Reliability • Glass Passivated (Patented Photoglass). Triple Diffused Mesa Te

POWER TRANSISTORS(5.0A,1300-1500V,55W)

5.0 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 55 WATTS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,70-100V)

SCHOTTKY BARRIER RECTIFIER 2.0A 70-100V