SCHOTTKY RECTIFIER

175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

The 203CNQ... (R) center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature.

The 203CNQ... (R) center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature.

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SCHOTTKY RECTIFIER

Features: • 175 ℃ TJ operation • Center tap module • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • This is a Pb

SCHOTTKY RECTIFIER

Description/ Features The 203CNQ... (R) center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in high current

SCHOTTKY RECTIFIER

175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

SCHOTTKY RECTIFIER

Description/ Features The 203CNQ... (R) center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in high current

SCHOTTKY RECTIFIER

Description/ Features The 203CNQ... (R) center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in high current

SCHOTTKY RECTIFIER

175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

SCHOTTKY RECTIFIER

Features: • 175 ℃ TJ operation • Center tap module • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • This is a Pb

SCHOTTKY RECTIFIER 200 Amp

IF(AV) Rectangular waveform 200 A VRRM 100 V IFSM @ tp = 5 µs sine 12,800 A VF @100Apk, TJ=125°C(per leg) 0.70 V TJ range - 55 to 175 °C Description The 203CNQ.. center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barri

Schottky Rectifier, 200 A

IF(AV) 200 A VR 100 V Package TO-244 Circuit Two diodes common cathodes DESCRIPTION The VS-203CNQ.. center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junctio

SCHOTTKY RECTIFIER

Description/ Features The 203CNQ... (R) center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in high current

SCHOTTKY RECTIFIER

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Schottky PowerMod

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封装/外壳：TO-244AB 包装：散装 描述：DIODE MODULE 80V 100A TO244AB 分立半导体产品 二极管 - 整流器 - 阵列

功率模块

封装/外壳：PRM4 包装：散装 描述：DIODE SCHOTTKY 100V 100A PRM4 分立半导体产品 二极管 - 整流器 - 阵列

Schottky PowerMod

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Schottky Rectifier, 200 A

P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH203 is supplied in the SOT23 subminiature sur

Dual N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.