包装：散装 描述：STDOFF.453 M F 五金件，紧固件，配件 板垫片，支座

FUSES FOR SEMICONDUCTOR PROTECTION

Features / Benefits ► Extremely high interrupting rating 100 kA – 300 kA ► Voltage rating AC 660 V – AC 1000 V ► Protection of Power Semiconductors according to IEC 60269-1 and -4 ► Complies with DIN 43653 – sizes 000 and 00 with or without Topindicator and trip microswitch ► aR class 10 A –

FUSES FOR SEMICONDUCTOR PROTECTION

Features / Benefits ► Extremely high interrupting rating 100 kA – 300 kA ► Voltage rating AC 660 V – AC 1000 V ► Protection of Power Semiconductors according to IEC 60269-1 and -4 ► Complies with DIN 43653 – sizes 000 and 00 with or without Topindicator and trip microswitch ► aR class 10 A –

FUSES FOR SEMICONDUCTOR PROTECTION

Features / Benefits ► Extremely high interrupting rating 100 kA – 300 kA ► Voltage rating AC 660 V – AC 1000 V ► Protection of Power Semiconductors according to IEC 60269-1 and -4 ► Complies with DIN 43653 – sizes 000 and 00 with or without Topindicator and trip microswitch ► aR class 10 A –

FUSES FOR SEMICONDUCTOR PROTECTION

Features / Benefits ► Extremely high interrupting rating 100 kA – 300 kA ► Voltage rating AC 660 V – AC 1000 V ► Protection of Power Semiconductors according to IEC 60269-1 and -4 ► Complies with DIN 43653 – sizes 000 and 00 with or without Topindicator and trip microswitch ► aR class 10 A –

包装：散装 描述：PCBA, CBP/CMP INTERFACE 工具 压接器，压接机，压力机 - 配件

Adapter kit

文件：65.25 Kbytes Page：1 Pages

UHF TV Linear Power Transistor Cellular Radio RF Power Transistor

Description The 20189 is an NPN, common emitter RF power transistor intended for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are us

CHARACTER SIZE : 6.70W X 9.40H mm ( 5 X 7 DOTS) 6.70W X 11.50H mm ( 5 X 8 DOTS)

文件：69.07 Kbytes Page：1 Pages

CHARACTER SIZE : 6.70W X 9.40H mm ( 5 X 7 DOTS) 6.70W X 11.50H mm ( 5 X 8 DOTS)

文件：69.07 Kbytes Page：1 Pages