Description

The 20189 is an NPN, common emitter RF power transistor intended for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100 lot traceability is standard.

• 25 Volt, 900–960 MHz Characteristics

- Output Power = 1 Watt

- Gain = 12 dB Min at 1 Watt

• Class A/AB Characteristics

• Gold Metallization

• Silicon Nitride Passivated

• Surface Mountable

• Available in Tape and Reel