包装：散装 描述：CONN BARRIER STRIP 9CIRC 0.438\ 连接器，互连器件 隔板块

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 4400 V Mean forward current 1560 A Surge current 18.5 kA

NPN microwave power transistors

DESCRIPTION The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.The LCE2009S is a maintenance type in a SOT442A metal ceramic capstan package. FEATURES • Diffused emitter ballasting resistors • Self-aligned process

NPN microwave power transistors

DESCRIPTION The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.The LCE2009S is a maintenance type in a SOT442A metal ceramic capstan package. FEATURES • Diffused emitter ballasting resistors • Self-aligned process

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ■ NEW SERIES, ENHANCED PERFORMANCE ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING ■ INTEGRATED FREE

10 10W STEREO AMPLIFIER

DESCRIPTION The TDA2009A is class AB dual Hi-Fi Audio power amplifier assembled in Multiwatt package, specially designed for high quality stereo application as Hi-Fi and music centers. ■ HIGH OUTPUT POWER (10 + 10W Min. @ D = 1) ■ HIGH CURRENT CAPABILITY (UP TO 3.5A) ■ AC SHORT CIRCUIT PRO