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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1N68 | GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 |   | |
1N68 | GOLD BOUNDED GERMANUM DIODE | NJS | | |
LOW VOLTAGE DROP SCHOTTKY DIODE Features • Tungsten/Platinum schottky barrier for very low VF • Oxide passivated structure for very low leakage currents • Guard ring protection for increased reverse energy capability • Epitaxial structure minimizes forward voltage drop • Hermetically sealed, low profile ceramic surface moun | Microsemi 美高森美 | | ||
LOW VOLTAGE DROP SCHOTTKY DIODE Features • Tungsten/Platinum schottky barrier for very low VF • Oxide passivated structure for very low leakage currents • Guard ring protection for increased reverse energy capability • Epitaxial structure minimizes forward voltage drop • Hermetically sealed, low profile ceramic surface moun | Microsemi 美高森美 | | ||
LOW LEAKAGE SCHOTTKY DIODE Features • Tungsten schottky barrier • Oxide passivated structure for very low leakage currents • Guard ring protection for increased reverse energy capability • Epitaxial structure minimizes forward voltage drop • Hermetically sealed, low profile ceramic surface mount power package • Low pa | Microsemi 美高森美 | | ||
LOW LEAKAGE SCHOTTKY DIODE Features • Tungsten schottky barrier • Oxide passivated structure for very low leakage currents • Guard ring protection for increased reverse energy capability • Epitaxial structure minimizes forward voltage drop • Hermetically sealed, low profile ceramic surface mount power package • Low pa | Microsemi 美高森美 | | ||
LOW REVERSE LEAKAGE SCHOTTKY DIODE LOW REVERSE LEAKAGE SCHOTTKY DIODE 100 Volts 25 Amps Features • Tungsten schottky barrier • Oxide passivated structure • Guard ring protection for increased reverse energy capability • Epitaxial structure minimizes forward voltage drop • Hermetically sealed, low profile | Microsemi 美高森美 | | ||
LOW REVERSE LEAKAGE SCHOTTKY DIODE LOW REVERSE LEAKAGE SCHOTTKY DIODE 100 Volts 25 Amps Features • Tungsten schottky barrier • Oxide passivated structure • Guard ring protection for increased reverse energy capability • Epitaxial structure minimizes forward voltage drop • Hermetically sealed, low profile | Microsemi 美高森美 | | ||
LOW VOLTAGE DROP SCHOTTKY DIODE Features • Tungsten/Platinum schottky barrier for very low VF • Oxide passivated structure for very low leakage currents • Guard ring protection for increased reverse energy capability • Epitaxial structure minimizes forward voltage drop • Hermetically sealed, low profile ceramic surface moun | Microsemi 美高森美 | | ||
LOW VOLTAGE DROP SCHOTTKY DIODE Features • Tungsten/Platinum schottky barrier for very low VF • Oxide passivated structure for very low leakage currents • Guard ring protection for increased reverse energy capability • Epitaxial structure minimizes forward voltage drop • Hermetically sealed, low profile ceramic surface moun | Microsemi 美高森美 | | ||
LOW LEAKAGE CURRENT SCHOTTKY DIODE Features ● Tungsten schottky barrier ● Oxide passivated structure for very low leakage currents ● Guard ring protection for increased reverse energy capability ● Epitaxial structure minimizes forward voltage drop ● Hermetically sealed, low profile ceramic surface mount power package ● Low pa | Microsemi 美高森美 | | ||
LOW LEAKAGE CURRENT SCHOTTKY DIODE Features ● Tungsten schottky barrier ● Oxide passivated structure for very low leakage currents ● Guard ring protection for increased reverse energy capability ● Epitaxial structure minimizes forward voltage drop ● Hermetically sealed, low profile ceramic surface mount power package ● Low pa | Microsemi 美高森美 | | ||
LOW REVERSE LEAKAGE SCHOTTKY DIODE Features • Tungsten schottky barrier for low VF • Oxide passivated structure for very low leakage currents • Guard ring protection for increased reverse energy capability • Epitaxial structure minimizes forward voltage drop • Hermetically sealed, low profile ceramic surface mount power packag | Microsemi 美高森美 | | ||
LOW REVERSE LEAKAGE SCHOTTKY DIODE Features • Tungsten schottky barrier for low VF • Oxide passivated structure for very low leakage currents • Guard ring protection for increased reverse energy capability • Epitaxial structure minimizes forward voltage drop • Hermetically sealed, low profile ceramic surface mount power packag | Microsemi 美高森美 | | ||
LOW VOLTAGE DROP SCHOTTKY DIODE Features ● Tungsten/Platinum schottky barrier ● Oxide passivated structure for very low leakage currents ● Guard ring protection for increased reverse energy capability ● Epitaxial structure minimizes forward voltage drop ● Hermetically sealed, low profile ceramic surface mount power package | Microsemi 美高森美 | | ||
LOW VOLTAGE DROP SCHOTTKY DIODE Features ● Tungsten/Platinum schottky barrier ● Oxide passivated structure for very low leakage currents ● Guard ring protection for increased reverse energy capability ● Epitaxial structure minimizes forward voltage drop ● Hermetically sealed, low profile ceramic surface mount power package | Microsemi 美高森美 | | ||
LOW LEAKAGE SCHOTTKY DIODE Features ● Tungsten/Platinum schottky barrier ● Oxide passivated structure for very low leakage currents ● Guard ring protection for increased reverse energy capability ● Epitaxial structure minimizes forward voltage drop ● Hermetically sealed, low profile ceramic surface mount power package | Microsemi 美高森美 | | ||
LOW LEAKAGE SCHOTTKY DIODE Features ● Tungsten/Platinum schottky barrier ● Oxide passivated structure for very low leakage currents ● Guard ring protection for increased reverse energy capability ● Epitaxial structure minimizes forward voltage drop ● Hermetically sealed, low profile ceramic surface mount power package | Microsemi 美高森美 | | ||
LOW LEAKAGE SCHOTTKY DIODE Features · Tungsten/Platinum schottky barrier · Oxide passivated structure for very low leakage currents · Guard ring protection for increased reverse energy capability · Epitaxial structure minimizes forward voltage drop · Epitaxial structure minimizes forward voltage drop · Her | Microsemi 美高森美 | | ||
LOW LEAKAGE SCHOTTKY DIODE Features · Tungsten/Platinum schottky barrier · Oxide passivated structure for very low leakage currents · Guard ring protection for increased reverse energy capability · Epitaxial structure minimizes forward voltage drop · Epitaxial structure minimizes forward voltage drop · Her | Microsemi 美高森美 | | ||
2,000 V - 5,000 V Rectifiers [VOLTAGE MULTIPLIERS INC.] 2,000 V - 5,000 V Rectifiers 0.5 A - 1.5 A Forward Current 30 ns - 50 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
2,000 V - 5,000 V Rectifiers 0.5 A - 1.5 A Forward Current 30 ns - 50 ns Recovery Time 2,000 V - 5,000 V Rectifiers 2.0 A - 5.0 A Forward Current 70 ns Recovery Time SURFACE MOUNT HERMETICALLY SEALED | VMI | | ||
Ultra-Fast Recovery High Voltage Silicon Rectifying Diode Introduce: HVGT high voltage silicon rectifier diodes is made of high quality glass passivated chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. Features: High reliability design. GPP chip. Hig | GETEDZGETAI ELECTRONICS DEVICE CO., LTD 格特电子广州市格特电子有限公司 | | ||
2,000 V - 5,000 V Rectifiers 2,000 V - 5,000 V Rectifiers 0.5 A -1.5 A Forward Current 30 ns - 50 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
2,000 V - 5,000 V Rectifiers 0.75 A - 2.00 A Forward Current 30 ns - 50 ns Recovery Time 2,000 V - 5,000 V Rectifiers 0.75 A - 2.00 A Forward Current 30 ns - 50 ns Recovery Time FORMED LEAD HERMETICALLY SEALED | VMI | | ||
2,000 V - 5,000 V Rectifiers 0.5 A - 1.5 A Forward Current 30 ns - 50 ns Recovery Time 2,000 V - 5,000 V Rectifiers 2.0 A - 5.0 A Forward Current 70 ns Recovery Time SURFACE MOUNT HERMETICALLY SEALED | VMI | | ||
2,000 V - 5,000 V Rectifiers 0.5 A - 1.5 A Forward Current 30 ns - 50 ns Recovery Time 2,000 V - 5,000 V Rectifiers 0.5 A - 1.5 A Forward Current 30 ns - 50 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED | VMI | | ||
2,000 V - 5,000 V Rectifiers [VOLTAGE MULTIPLIERS INC.] 2,000 V - 5,000 V Rectifiers 0.5 A - 1.5 A Forward Current 30 ns - 50 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
2,000 V - 5,000 V Rectifiers 2,000 V - 5,000 V Rectifiers 0.5 A -1.5 A Forward Current 30 ns - 50 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
2,000 V - 5,000 V Rectifiers 0.75 A - 2.00 A Forward Current 30 ns - 50 ns Recovery Time 2,000 V - 5,000 V Rectifiers 0.75 A - 2.00 A Forward Current 30 ns - 50 ns Recovery Time FORMED LEAD HERMETICALLY SEALED | VMI | | ||
2,000 V - 5,000 V Rectifiers 0.5 A - 1.5 A Forward Current 30 ns - 50 ns Recovery Time 2,000 V - 5,000 V Rectifiers 2.0 A - 5.0 A Forward Current 70 ns Recovery Time SURFACE MOUNT HERMETICALLY SEALED | VMI | | ||
2,000 V - 5,000 V Rectifiers 0.5 A - 1.5 A Forward Current 30 ns - 50 ns Recovery Time 2,000 V - 5,000 V Rectifiers 0.5 A - 1.5 A Forward Current 30 ns - 50 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED | VMI | | ||
2,000 V - 5,000 V Rectifiers [VOLTAGE MULTIPLIERS INC.] 2,000 V - 5,000 V Rectifiers 0.5 A - 1.5 A Forward Current 30 ns - 50 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
2,000 V - 5,000 V Rectifiers 2,000 V - 5,000 V Rectifiers 0.5 A -1.5 A Forward Current 30 ns - 50 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
2,000 V - 5,000 V Rectifiers 0.75 A - 2.00 A Forward Current 30 ns - 50 ns Recovery Time 2,000 V - 5,000 V Rectifiers 0.75 A - 2.00 A Forward Current 30 ns - 50 ns Recovery Time FORMED LEAD HERMETICALLY SEALED | VMI | | ||
2,000 V - 5,000 V Rectifiers 0.5 A - 1.5 A Forward Current 30 ns - 50 ns Recovery Time 2,000 V - 5,000 V Rectifiers 2.0 A - 5.0 A Forward Current 70 ns Recovery Time SURFACE MOUNT HERMETICALLY SEALED | VMI | | ||
2,000 V - 5,000 V Rectifiers [VOLTAGE MULTIPLIERS INC.] 2,000 V - 5,000 V Rectifiers 0.5 A - 1.5 A Forward Current 30 ns - 50 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
2,000 V - 5,000 V Rectifiers 2,000 V - 5,000 V Rectifiers 0.5 A -1.5 A Forward Current 30 ns - 50 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
2,000 V - 5,000 V Rectifiers 0.75 A - 2.00 A Forward Current 30 ns - 50 ns Recovery Time 2,000 V - 5,000 V Rectifiers 0.75 A - 2.00 A Forward Current 30 ns - 50 ns Recovery Time FORMED LEAD HERMETICALLY SEALED | VMI | | ||
35 and 45 VOLTS, 10 AMP DUAL SCHOTTKY COMMON CATHODE CENTERTAP RECTIFIER FEATURES: ➤ Low Profile Ceramic SMD ➤ High Surge Rating ➤ Low Reverse Leakage Current ➤ Low Forward Voltage ➤ Seam Welded Package ➤ Low Capacitance ➤ Ultrasonic Aluminum Wire Bonds | Microsemi 美高森美 | | ||
35 and 45 VOLTS, 10 AMP DUAL SCHOTTKY COMMON CATHODE CENTERTAP RECTIFIER FEATURES ➤ Low Profile Ceramic SMD ➤ High Surge Rating ➤ Low Reverse Leakage Current ➤ Low Forward Voltage ➤ Low Power Losses | Microsemi 美高森美 | | ||
35 and 45 VOLTS, 10 AMP DUAL SCHOTTKY COMMON CATHODE CENTERTAP RECTIFIER FEATURES: ➤ Low Profile Ceramic SMD ➤ High Surge Rating ➤ Low Reverse Leakage Current ➤ Low Forward Voltage ➤ Seam Welded Package ➤ Low Capacitance ➤ Ultrasonic Aluminum Wire Bonds | Microsemi 美高森美 | | ||
35 and 45 VOLTS, 10 AMP DUAL SCHOTTKY COMMON CATHODE CENTERTAP RECTIFIER FEATURES ➤ Low Profile Ceramic SMD ➤ High Surge Rating ➤ Low Reverse Leakage Current ➤ Low Forward Voltage ➤ Low Power Losses | Microsemi 美高森美 | | ||
60 VOLTS, 10 AMP DUAL SCHOTTKY COMMON CATHODE CENTERTAP RECTIFIER FEATURES: ➤ Low Profile Ceramic SMD ➤ High Surge Rating ➤ Low Reverse Leakage Current ➤ Low Forward Voltage ➤ Seam Welded Package ➤ Low Capacitance ➤ Ultrasonic Aluminum Wire Bonds | Microsemi 美高森美 | | ||
60 VOLTS, 10 AMP DUAL SCHOTTKY COMMON CATHODE CENTERTAP RECTIFIER FEATURES ➤ Low Profile Ceramic SMD ➤ High Surge Rating ➤ Low Reverse Leakage Current ➤ Low Forward Voltage ➤ Low Power Losses | Microsemi 美高森美 | | ||
100 VOLTS, 10 AMP DUAL SCHOTTKY COMMON CATHODE CENTERTAP RECTIFIER FEATURES: ➤ Low Profile Ceramic SMD ➤ High Surge Rating ➤ Low Reverse Leakage Current ➤ Low Forward Voltage ➤ Seam Welded Package ➤ Low Capacitance ➤ Ultrasonic Aluminum Wire Bonds | Microsemi 美高森美 | | ||
100 VOLTS, 10 AMP DUAL SCHOTTKY COMMON CATHODE CENTERTAP RECTIFIER FEATURES ➤ Low Profile Ceramic SMD ➤ High Surge Rating ➤ Low Reverse Leakage Current ➤ Low Forward Voltage ➤ Low Power Losses | Microsemi 美高森美 | | ||
100 VOLTS, 20 AMP SCHOTTKY RECTIFIER CERAMIC SURFACE MOUNT FEATURES: ➤ Low Profile Ceramic SMD ➤ High Surge Rating ➤ Low Reverse Leakage Current ➤ Low Forward Voltage ➤ Seam Welded Package ➤ Low Capacitance ➤ Ultrasonic Aluminum Wire Bonds | Microsemi 美高森美 | | ||
45 VOLTS, 40 AMP SCHOTTKY RECTIFIER CERAMIC SURFACE MOUNT FEATURES: ➤ Low Profile Ceramic SMD ➤ High Surge Rating ➤ Low Reverse Leakage Current ➤ Low Forward Voltage ➤ Seam Welded Package ➤ Low Capacitance ➤ Ultrasonic Aluminum Wire Bonds | Microsemi 美高森美 | | ||
45 VOLTS, 30 AMP SCHOTTKY RECTIFIER CERAMIC SURFACE MOUNT FEATURES ➤ Low Profile Ceramic SMD ➤ High Surge Rating ➤ Low Reverse Leakage Current ➤ Low Forward Voltage ➤ Low Power Losses | Microsemi 美高森美 | | ||
SCHOTTKY BARRIER DIODES DESCRIPTION This Schottky barrier diode is metallurgically bonded and offers military grade qualifications for high-reliability applications on “1N” prefixed numbers. This small diode is hermetically sealed and bonded into a DO-35 glass package. FEATURES • JEDEC registered 1N5711-1, 1N5712-1, 1 | Microsemi 美高森美 | | ||
SCHOTTKY BARRIER DIODES SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT Qualified per MIL-PRF-19500/444 | Microsemi 美高森美 | | ||
SCHOTTKY BARRIER DIODES • 1N5711-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/444 • 1N5712-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/445 • SCHOTTKY BARRIER DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED | CDI-DIODE | | ||
SCHOTTKY BARRIER DIODES SCHOTTKY BARRIER DIODES – LEADLESS PACKAGE FOR SURFACE MOUNT – METALLURGICALLY BONDED – DOUBLE PLUG CONSTRUCTION Qualified per MIL-PRF-19500/444 | Microsemi 美高森美 | | ||
SCHOTTKY BARRIER DIODES • 1N5711UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS PER MIL-PRF-19500/444 • 1N5712UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS PER MIL-PRF 19500/445 • SCHOTTKY BARRIER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION | CDI-DIODE | | ||
SCHOTTKY BARRIER DIODES • 1N5711-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/444 • 1N5712-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/445 • SCHOTTKY BARRIER DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED | CDI-DIODE | | ||
SCHOTTKY BARRIER DIODES SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT Qualified per MIL-PRF-19500/444 | Microsemi 美高森美 | | ||
SCHOTTKY BARRIER DIODES DESCRIPTION This Schottky barrier diode is metallurgically bonded and offers military grade qualifications for high-reliability applications on “1N” prefixed numbers. This small diode is hermetically sealed and bonded into a DO-35 glass package. FEATURES • JEDEC registered 1N5711-1, 1N5712-1, 1 | Microsemi 美高森美 | | ||
SCHOTTKY BARRIER DIODES SCHOTTKY BARRIER DIODES – LEADLESS PACKAGE FOR SURFACE MOUNT – METALLURGICALLY BONDED – DOUBLE PLUG CONSTRUCTION Qualified per MIL-PRF-19500/444 | Microsemi 美高森美 | | ||
SCHOTTKY BARRIER DIODES • 1N5711UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS PER MIL-PRF-19500/444 • 1N5712UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS PER MIL-PRF 19500/445 • SCHOTTKY BARRIER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION | CDI-DIODE | |
1N68产品属性
- 类型
描述
- 型号
1N68
- 功能描述
GOLD BONDED DIODES
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VMI |
25+ |
18000 |
一级代理保证进口原装正品假一罚十价格合理 |
||||
IR |
24+ |
SMD |
1680 |
IR专营品牌进口原装现货假一赔十 |
|||
MSC |
25+ |
7 |
公司优势库存 热卖中!!! |
||||
VMI |
2022+ |
DIP |
8000 |
只做原装支持实单,有单必成。 |
|||
INFINEON/英飞凌 |
2447 |
20 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
IR |
23+ |
N/A |
7000 |
||||
MICROCHIP(美国微芯) |
24+ |
MELF |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
IR |
22+ |
N/A |
6000 |
终端可免费供样,支持BOM配单 |
|||
23+ |
SOT23-5 |
452585 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
1N68芯片相关品牌
1N68规格书下载地址
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1N68数据表相关新闻
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