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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
1N68 | GOLDBONDEDDIODES [VMI] 200V-1,000VSinglePhaseBridge 22.0A-25.0AForwardCurrent 70ns-3000nsRecoveryTime | ETCList of Unclassifed Manufacturers 未分类制造商 |  |   |
LOWVOLTAGEDROPSCHOTTKYDIODE Features •Tungsten/PlatinumschottkybarrierforverylowVF •Oxidepassivatedstructureforverylowleakagecurrents •Guardringprotectionforincreasedreverseenergycapability •Epitaxialstructureminimizesforwardvoltagedrop •Hermeticallysealed,lowprofileceramicsurfacemoun | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | | |
LOWVOLTAGEDROPSCHOTTKYDIODE Features •Tungsten/PlatinumschottkybarrierforverylowVF •Oxidepassivatedstructureforverylowleakagecurrents •Guardringprotectionforincreasedreverseenergycapability •Epitaxialstructureminimizesforwardvoltagedrop •Hermeticallysealed,lowprofileceramicsurfacemoun | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LOWLEAKAGESCHOTTKYDIODE Features •Tungstenschottkybarrier •Oxidepassivatedstructureforverylowleakagecurrents •Guardringprotectionforincreasedreverseenergycapability •Epitaxialstructureminimizesforwardvoltagedrop •Hermeticallysealed,lowprofileceramicsurfacemountpowerpackage •Lowpa | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LOWLEAKAGESCHOTTKYDIODE Features •Tungstenschottkybarrier •Oxidepassivatedstructureforverylowleakagecurrents •Guardringprotectionforincreasedreverseenergycapability •Epitaxialstructureminimizesforwardvoltagedrop •Hermeticallysealed,lowprofileceramicsurfacemountpowerpackage •Lowpa | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LOWREVERSELEAKAGESCHOTTKYDIODE LOWREVERSELEAKAGESCHOTTKYDIODE 100Volts25Amps Features •Tungstenschottkybarrier •Oxidepassivatedstructure •Guardringprotectionforincreasedreverseenergycapability •Epitaxialstructureminimizesforwardvoltagedrop •Hermeticallysealed,lowprofile | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LOWREVERSELEAKAGESCHOTTKYDIODE LOWREVERSELEAKAGESCHOTTKYDIODE 100Volts25Amps Features •Tungstenschottkybarrier •Oxidepassivatedstructure •Guardringprotectionforincreasedreverseenergycapability •Epitaxialstructureminimizesforwardvoltagedrop •Hermeticallysealed,lowprofile | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LOWVOLTAGEDROPSCHOTTKYDIODE Features •Tungsten/PlatinumschottkybarrierforverylowVF •Oxidepassivatedstructureforverylowleakagecurrents •Guardringprotectionforincreasedreverseenergycapability •Epitaxialstructureminimizesforwardvoltagedrop •Hermeticallysealed,lowprofileceramicsurfacemoun | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LOWVOLTAGEDROPSCHOTTKYDIODE Features •Tungsten/PlatinumschottkybarrierforverylowVF •Oxidepassivatedstructureforverylowleakagecurrents •Guardringprotectionforincreasedreverseenergycapability •Epitaxialstructureminimizesforwardvoltagedrop •Hermeticallysealed,lowprofileceramicsurfacemoun | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LOWLEAKAGECURRENTSCHOTTKYDIODE Features ●Tungstenschottkybarrier ●Oxidepassivatedstructureforverylowleakagecurrents ●Guardringprotectionforincreasedreverseenergycapability ●Epitaxialstructureminimizesforwardvoltagedrop ●Hermeticallysealed,lowprofileceramicsurfacemountpowerpackage ●Lowpa | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LOWLEAKAGECURRENTSCHOTTKYDIODE Features ●Tungstenschottkybarrier ●Oxidepassivatedstructureforverylowleakagecurrents ●Guardringprotectionforincreasedreverseenergycapability ●Epitaxialstructureminimizesforwardvoltagedrop ●Hermeticallysealed,lowprofileceramicsurfacemountpowerpackage ●Lowpa | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LOWREVERSELEAKAGESCHOTTKYDIODE Features •TungstenschottkybarrierforlowVF •Oxidepassivatedstructureforverylowleakagecurrents •Guardringprotectionforincreasedreverseenergycapability •Epitaxialstructureminimizesforwardvoltagedrop •Hermeticallysealed,lowprofileceramicsurfacemountpowerpackag | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LOWREVERSELEAKAGESCHOTTKYDIODE Features •TungstenschottkybarrierforlowVF •Oxidepassivatedstructureforverylowleakagecurrents •Guardringprotectionforincreasedreverseenergycapability •Epitaxialstructureminimizesforwardvoltagedrop •Hermeticallysealed,lowprofileceramicsurfacemountpowerpackag | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LOWVOLTAGEDROPSCHOTTKYDIODE Features ●Tungsten/Platinumschottkybarrier ●Oxidepassivatedstructureforverylowleakagecurrents ●Guardringprotectionforincreasedreverseenergycapability ●Epitaxialstructureminimizesforwardvoltagedrop ●Hermeticallysealed,lowprofileceramicsurfacemountpowerpackage | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LOWVOLTAGEDROPSCHOTTKYDIODE Features ●Tungsten/Platinumschottkybarrier ●Oxidepassivatedstructureforverylowleakagecurrents ●Guardringprotectionforincreasedreverseenergycapability ●Epitaxialstructureminimizesforwardvoltagedrop ●Hermeticallysealed,lowprofileceramicsurfacemountpowerpackage | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LOWLEAKAGESCHOTTKYDIODE Features ●Tungsten/Platinumschottkybarrier ●Oxidepassivatedstructureforverylowleakagecurrents ●Guardringprotectionforincreasedreverseenergycapability ●Epitaxialstructureminimizesforwardvoltagedrop ●Hermeticallysealed,lowprofileceramicsurfacemountpowerpackage | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LOWLEAKAGESCHOTTKYDIODE Features ●Tungsten/Platinumschottkybarrier ●Oxidepassivatedstructureforverylowleakagecurrents ●Guardringprotectionforincreasedreverseenergycapability ●Epitaxialstructureminimizesforwardvoltagedrop ●Hermeticallysealed,lowprofileceramicsurfacemountpowerpackage | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LOWLEAKAGESCHOTTKYDIODE Features ·Tungsten/Platinumschottkybarrier ·Oxidepassivatedstructureforverylowleakagecurrents ·Guardringprotectionforincreasedreverseenergycapability ·Epitaxialstructureminimizesforwardvoltagedrop ·Epitaxialstructureminimizesforwardvoltagedrop ·Her | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LOWLEAKAGESCHOTTKYDIODE Features ·Tungsten/Platinumschottkybarrier ·Oxidepassivatedstructureforverylowleakagecurrents ·Guardringprotectionforincreasedreverseenergycapability ·Epitaxialstructureminimizesforwardvoltagedrop ·Epitaxialstructureminimizesforwardvoltagedrop ·Her | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
2,000V-5,000VRectifiers [VOLTAGEMULTIPLIERSINC.] 2,000V-5,000VRectifiers 0.5A-1.5AForwardCurrent 30ns-50nsRecoveryTime AXIALLEADEDHERMETICALLYSEALED | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
2,000V-5,000VRectifiers0.5A-1.5AForwardCurrent30ns-50nsRecoveryTime 2,000V-5,000VRectifiers 2.0A-5.0AForwardCurrent70nsRecoveryTime SURFACEMOUNTHERMETICALLYSEALED | VMI Voltage Multipliers |  | | |
Ultra-FastRecoveryHighVoltageSiliconRectifyingDiode Introduce: HVGThighvoltagesiliconrectifierdiodesismadeofhighqualityglasspassivatedchipandhighreliabilityepoxyresinsealingstructure,andthroughprofessionaltestingequipmentinspectionqualifiedaftertocustomers. Features: Highreliabilitydesign. GPPchip. Hig | GETEDZGETAI ELECTRONICS DEVICE CO., LTD 格特电子广州市格特电子有限公司 |  | | |
2,000V-5,000VRectifiers 2,000V-5,000VRectifiers 0.5A-1.5AForwardCurrent 30ns-50nsRecoveryTime AXIALLEADED HERMETICALLYSEALED | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | | |
2,000V-5,000VRectifiers0.75A-2.00AForwardCurrent30ns-50nsRecoveryTime 2,000V-5,000VRectifiers 0.75A-2.00AForwardCurrent 30ns-50nsRecoveryTime FORMEDLEAD HERMETICALLYSEALED | VMI Voltage Multipliers | | | |
2,000V-5,000VRectifiers [VOLTAGEMULTIPLIERSINC.] 2,000V-5,000VRectifiers 0.5A-1.5AForwardCurrent 30ns-50nsRecoveryTime AXIALLEADEDHERMETICALLYSEALED | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
2,000V-5,000VRectifiers0.5A-1.5AForwardCurrent30ns-50nsRecoveryTime 2,000V-5,000VRectifiers 2.0A-5.0AForwardCurrent70nsRecoveryTime SURFACEMOUNTHERMETICALLYSEALED | VMI Voltage Multipliers | | | |
2,000V-5,000VRectifiers0.5A-1.5AForwardCurrent30ns-50nsRecoveryTime 2,000V-5,000VRectifiers 0.5A-1.5AForwardCurrent 30ns-50nsRecoveryTime AXIALLEADED HERMETICALLYSEALED | VMI Voltage Multipliers | | | |
2,000V-5,000VRectifiers 2,000V-5,000VRectifiers 0.5A-1.5AForwardCurrent 30ns-50nsRecoveryTime AXIALLEADED HERMETICALLYSEALED | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
2,000V-5,000VRectifiers0.75A-2.00AForwardCurrent30ns-50nsRecoveryTime 2,000V-5,000VRectifiers 0.75A-2.00AForwardCurrent 30ns-50nsRecoveryTime FORMEDLEAD HERMETICALLYSEALED | VMI Voltage Multipliers | | | |
2,000V-5,000VRectifiers0.5A-1.5AForwardCurrent30ns-50nsRecoveryTime 2,000V-5,000VRectifiers 0.5A-1.5AForwardCurrent 30ns-50nsRecoveryTime AXIALLEADED HERMETICALLYSEALED | VMI Voltage Multipliers | | | |
2,000V-5,000VRectifiers0.5A-1.5AForwardCurrent30ns-50nsRecoveryTime 2,000V-5,000VRectifiers 2.0A-5.0AForwardCurrent70nsRecoveryTime SURFACEMOUNTHERMETICALLYSEALED | VMI Voltage Multipliers | | | |
2,000V-5,000VRectifiers [VOLTAGEMULTIPLIERSINC.] 2,000V-5,000VRectifiers 0.5A-1.5AForwardCurrent 30ns-50nsRecoveryTime AXIALLEADEDHERMETICALLYSEALED | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
2,000V-5,000VRectifiers 2,000V-5,000VRectifiers 0.5A-1.5AForwardCurrent 30ns-50nsRecoveryTime AXIALLEADED HERMETICALLYSEALED | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
2,000V-5,000VRectifiers0.75A-2.00AForwardCurrent30ns-50nsRecoveryTime 2,000V-5,000VRectifiers 0.75A-2.00AForwardCurrent 30ns-50nsRecoveryTime FORMEDLEAD HERMETICALLYSEALED | VMI Voltage Multipliers | | | |
2,000V-5,000VRectifiers0.5A-1.5AForwardCurrent30ns-50nsRecoveryTime 2,000V-5,000VRectifiers 2.0A-5.0AForwardCurrent70nsRecoveryTime SURFACEMOUNTHERMETICALLYSEALED | VMI Voltage Multipliers | | | |
2,000V-5,000VRectifiers [VOLTAGEMULTIPLIERSINC.] 2,000V-5,000VRectifiers 0.5A-1.5AForwardCurrent 30ns-50nsRecoveryTime AXIALLEADEDHERMETICALLYSEALED | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
2,000V-5,000VRectifiers 2,000V-5,000VRectifiers 0.5A-1.5AForwardCurrent 30ns-50nsRecoveryTime AXIALLEADED HERMETICALLYSEALED | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
2,000V-5,000VRectifiers0.75A-2.00AForwardCurrent30ns-50nsRecoveryTime 2,000V-5,000VRectifiers 0.75A-2.00AForwardCurrent 30ns-50nsRecoveryTime FORMEDLEAD HERMETICALLYSEALED | VMI Voltage Multipliers | | | |
35and45VOLTS,10AMPDUALSCHOTTKYCOMMONCATHODECENTERTAPRECTIFIER FEATURES: ➤LowProfileCeramicSMD ➤HighSurgeRating ➤LowReverseLeakageCurrent ➤LowForwardVoltage ➤SeamWeldedPackage ➤LowCapacitance ➤UltrasonicAluminumWireBonds | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
35and45VOLTS,10AMPDUALSCHOTTKYCOMMONCATHODECENTERTAPRECTIFIER FEATURES ➤LowProfileCeramicSMD ➤HighSurgeRating ➤LowReverseLeakageCurrent ➤LowForwardVoltage ➤LowPowerLosses | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
35and45VOLTS,10AMPDUALSCHOTTKYCOMMONCATHODECENTERTAPRECTIFIER FEATURES: ➤LowProfileCeramicSMD ➤HighSurgeRating ➤LowReverseLeakageCurrent ➤LowForwardVoltage ➤SeamWeldedPackage ➤LowCapacitance ➤UltrasonicAluminumWireBonds | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
35and45VOLTS,10AMPDUALSCHOTTKYCOMMONCATHODECENTERTAPRECTIFIER FEATURES ➤LowProfileCeramicSMD ➤HighSurgeRating ➤LowReverseLeakageCurrent ➤LowForwardVoltage ➤LowPowerLosses | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
60VOLTS,10AMPDUALSCHOTTKYCOMMONCATHODECENTERTAPRECTIFIER FEATURES: ➤LowProfileCeramicSMD ➤HighSurgeRating ➤LowReverseLeakageCurrent ➤LowForwardVoltage ➤SeamWeldedPackage ➤LowCapacitance ➤UltrasonicAluminumWireBonds | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
60VOLTS,10AMPDUALSCHOTTKYCOMMONCATHODECENTERTAPRECTIFIER FEATURES ➤LowProfileCeramicSMD ➤HighSurgeRating ➤LowReverseLeakageCurrent ➤LowForwardVoltage ➤LowPowerLosses | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
100VOLTS,10AMPDUALSCHOTTKYCOMMONCATHODECENTERTAPRECTIFIER FEATURES: ➤LowProfileCeramicSMD ➤HighSurgeRating ➤LowReverseLeakageCurrent ➤LowForwardVoltage ➤SeamWeldedPackage ➤LowCapacitance ➤UltrasonicAluminumWireBonds | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
100VOLTS,10AMPDUALSCHOTTKYCOMMONCATHODECENTERTAPRECTIFIER FEATURES ➤LowProfileCeramicSMD ➤HighSurgeRating ➤LowReverseLeakageCurrent ➤LowForwardVoltage ➤LowPowerLosses | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
100VOLTS,20AMPSCHOTTKYRECTIFIERCERAMICSURFACEMOUNT FEATURES: ➤LowProfileCeramicSMD ➤HighSurgeRating ➤LowReverseLeakageCurrent ➤LowForwardVoltage ➤SeamWeldedPackage ➤LowCapacitance ➤UltrasonicAluminumWireBonds | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
45VOLTS,40AMPSCHOTTKYRECTIFIERCERAMICSURFACEMOUNT FEATURES: ➤LowProfileCeramicSMD ➤HighSurgeRating ➤LowReverseLeakageCurrent ➤LowForwardVoltage ➤SeamWeldedPackage ➤LowCapacitance ➤UltrasonicAluminumWireBonds | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
45VOLTS,30AMPSCHOTTKYRECTIFIERCERAMICSURFACEMOUNT FEATURES ➤LowProfileCeramicSMD ➤HighSurgeRating ➤LowReverseLeakageCurrent ➤LowForwardVoltage ➤LowPowerLosses | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
SCHOTTKYBARRIERDIODES DESCRIPTION ThisSchottkybarrierdiodeismetallurgicallybondedandoffersmilitarygradequalificationsforhigh-reliabilityapplicationson“1N”prefixednumbers.ThissmalldiodeishermeticallysealedandbondedintoaDO-35glasspackage. FEATURES •JEDECregistered1N5711-1,1N5712-1,1 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
SCHOTTKYBARRIERDIODES SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
SCHOTTKYBARRIERDIODES •1N5711-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/444 •1N5712-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/445 •SCHOTTKYBARRIERDIODES •HERMETICALLYSEALED •METALLURGICALLYBONDED | CDI-DIODE Compensated Deuices Incorporated |  | | |
SCHOTTKYBARRIERDIODES •1N5711UR-1AVAILABLEINJAN,JANTX,JANTXVandJANSPERMIL-PRF-19500/444 •1N5712UR-1AVAILABLEINJAN,JANTX,JANTXVandJANSPERMIL-PRF19500/445 •SCHOTTKYBARRIERDIODES •LEADLESSPACKAGEFORSURFACEMOUNT •METALLURGICALLYBONDED,DOUBLEPLUGCONSTRUCTION | CDI-DIODE Compensated Deuices Incorporated | | | |
SCHOTTKYBARRIERDIODES SCHOTTKYBARRIERDIODES –LEADLESSPACKAGEFORSURFACEMOUNT –METALLURGICALLYBONDED –DOUBLEPLUGCONSTRUCTION QualifiedperMIL-PRF-19500/444 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
SCHOTTKYBARRIERDIODES SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
SCHOTTKYBARRIERDIODES •1N5711-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/444 •1N5712-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/445 •SCHOTTKYBARRIERDIODES •HERMETICALLYSEALED •METALLURGICALLYBONDED | CDI-DIODE Compensated Deuices Incorporated | | | |
SCHOTTKYBARRIERDIODES DESCRIPTION ThisSchottkybarrierdiodeismetallurgicallybondedandoffersmilitarygradequalificationsforhigh-reliabilityapplicationson“1N”prefixednumbers.ThissmalldiodeishermeticallysealedandbondedintoaDO-35glasspackage. FEATURES •JEDECregistered1N5711-1,1N5712-1,1 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
SCHOTTKYBARRIERDIODES SCHOTTKYBARRIERDIODES –LEADLESSPACKAGEFORSURFACEMOUNT –METALLURGICALLYBONDED –DOUBLEPLUGCONSTRUCTION QualifiedperMIL-PRF-19500/444 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
SCHOTTKYBARRIERDIODES •1N5711UR-1AVAILABLEINJAN,JANTX,JANTXVandJANSPERMIL-PRF-19500/444 •1N5712UR-1AVAILABLEINJAN,JANTX,JANTXVandJANSPERMIL-PRF19500/445 •SCHOTTKYBARRIERDIODES •LEADLESSPACKAGEFORSURFACEMOUNT •METALLURGICALLYBONDED,DOUBLEPLUGCONSTRUCTION | CDI-DIODE Compensated Deuices Incorporated | | | |
3AmpSQ-MELFSchottkyBarrierRectifiers DESCRIPTION Thisseriesof3ampSchottkyrectifiersarecompactintheirsquareMELFpackagingforhighdensitymounting.The1N5822USand1N6864USaremilitaryqualifiedforhigh-reliabilityapplications. FEATURES •JEDECregisteredsurfacemountequivalentsof1N5820–1N5822and1N6864nu | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | |
1N68产品属性
- 类型
描述
- 型号
1N68
- 功能描述
GOLD BONDED DIODES
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Microsemi |
1942+ |
N/A |
908 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
|||
CDI-DIODE |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
VMI |
2022+ |
二极管 |
7300 |
原装现货 |
|||
VMI |
23+ |
N/A |
8000 |
一级代理现货、保证进口原装正品假一罚十价格合理 |
|||
MSC |
7 |
公司优势库存 热卖中!!! |
|||||
MICROCHIP-微芯 |
24+25+/26+27+ |
DO-35-2 |
6328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
2021+ |
SOT23-5 |
452585 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
MICROCHIP(美国微芯) |
23+ |
MELF |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
IR |
2018+ |
SMD |
1680 |
IR专营品牌进口原装现货假一赔十 |
|||
INFINEON/英飞凌 |
2021+ |
20 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
1N68芯片相关品牌
1N68规格书下载地址
1N68参数引脚图相关
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2n3904
- 256p
- 2531
- 240m
- 2222a
- 20kv
- 20700
- 1N6837
- 1N6836
- 1N6824UR-1
- 1N6824-1
- 1N6823R
- 1N6823
- 1N6822R
- 1N6822
- 1N6821R
- 1N6821
- 1N6820R
- 1N6820
- 1N6819R
- 1N6819
- 1N6818R
- 1N6818
- 1N6817R
- 1N6817
- 1N6816R
- 1N6816
- 1N6815R
- 1N6815
- 1N6808
- 1N67A
- 1N6791
- 1N6779
- 1N6778
- 1N6777
- 1N6776
- 1N6775
- 1N6774
- 1N6773R
- 1N6773
- 1N6772R
- 1N6772
- 1N6771R
- 1N6771
- 1N6770R
- 1N6770
- 1N6769R
- 1N6769
- 1N6768R
- 1N6768
1N68数据表相关新闻
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全新原装进口，质量保证，宇集芯您放心的品质，VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试，以确保我们的客户收到最/高质量的二极管。
2021-5-141N6529 全套中高压二极管
全新原装进口，质量保证，宇集芯您放心的品质，VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试，以确保我们的客户收到最/高质量的二极管。
2021-5-131PS70SB85，115香港赛普电子NXP代理现货热卖
1PS70SB85，115香港赛普电子联系电话：13530751985联系人Mike
2019-4-91PS76SB40公司大量全新现货随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-2-28
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