Features

• Tungsten/Platinum schottky barrier for very low VF

• Oxide passivated structure for very low leakage currents

• Guard ring protection for increased reverse energy capability

• Epitaxial structure minimizes forward voltage drop

• Hermetically sealed, low profile ceramic surface mount power package

• Low package inductance

• Very low thermal resistance

• Available as standard polarity (strap is anode: 1N6815) and reverse

polarity (strap is cathode: 1N6815R)

• TXV-level (MSASC25H45KV) or S-level (MSASC25H45KS) screening

i.a.w. Microsemi Internal Procedure PS11.50 available