| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po | UTC 友顺 |   | ||
GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Drain Current ID= 1.2A@ TC=25C ·FEATURES • Drain Current ID= 1.2A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 12.5Ω (Max) • Fast Switching ·APPLICATIONS • Switching power supplies,converters,AC and DC motor controls | ISC 无锡固电 | | ||
N-CHANNEL MOSFET DESCRIPTION 1N60 1N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power su | ZSELEC 淄博圣诺 | | ||
N-CHANNEL POWER MOSFET 文件：717.14 Kbytes Page：9 Pages | UMW 友台半导体 | | ||
1.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po | UTC 友顺 | | ||
1.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po | UTC 友顺 | | ||
1.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po | UTC 友顺 | | ||
1.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po | UTC 友顺 | | ||
1.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po | UTC 友顺 | | ||
1.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po | UTC 友顺 | | ||
1.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po | UTC 友顺 | | ||
1.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po | UTC 友顺 | | ||
1.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po | UTC 友顺 | | ||
1.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：326.95 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：326.95 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：326.95 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：326.95 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：326.95 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：326.95 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：326.95 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：326.95 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.08722 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.08621 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VMI |
24+ |
NA/ |
6206 |
原装现货,当天可交货,原型号开票 |
|||
UTC(友顺) |
24+/25+ |
SOT-223-3 |
2500 |
UTC原厂一级代理商,价格优势! |
|||
VMI |
23+ |
NA |
114 |
专做原装正品,假一罚百! |
|||
VOLTAGE MULTIPLIERS |
23+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
长电 |
25+23+ |
TO-252 |
23828 |
绝对原装正品全新进口深圳现货 |
|||
UMW/广东友台半导体 |
25+ |
SOT-223-4 |
32360 |
UMW/广东友台半导体全新特价1N65G即刻询购立享优惠#长期有货 |
|||
SK |
23+ |
DFN5060-8 |
368000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
MSC |
QQ咨询 |
CDIP |
104 |
全新原装 研究所指定供货商 |
|||
VOLTAGEMULTIPLIER |
24+ |
281 |
|||||
Microsemi |
24+ |
2000 |
原厂正规渠道现货、保证原装正品 |
1N65L芯片相关品牌
1N65L规格书下载地址
1N65L参数引脚图相关
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1N65L数据表相关新闻
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全新原装进口，质量保证，宇集芯您放心的品质，VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试，以确保我们的客户收到最/高质量的二极管。
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瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-2-28
DdatasheetPDF页码索引
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