位置：首页 > IC中文资料第7781页 > 1N65G
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 |  |   | |
1.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  | | |
N-CHANNEL MOSFET DESCRIPTION 1N60 1N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power su | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 |  | | |
Drain Current ID= 1.2A@ TC=25C ·FEATURES • Drain Current ID= 1.2A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 12.5Ω (Max) • Fast Switching ·APPLICATIONS • Switching power supplies,converters,AC and DC motor controls | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-CHANNEL POWER MOSFET 文件：717.14 Kbytes Page：9 Pages | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 |  | | |
1.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
1.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
1.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
1.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
1.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
1.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
1.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
1.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
1.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
1.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNEL POWER MOSFET 文件：326.95 Kbytes Page：7 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNEL POWER MOSFET 文件：326.95 Kbytes Page：7 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNEL POWER MOSFET 文件：326.95 Kbytes Page：7 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNEL POWER MOSFET 文件：326.95 Kbytes Page：7 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNEL POWER MOSFET 文件：326.95 Kbytes Page：7 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNEL POWER MOSFET 文件：326.95 Kbytes Page：7 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNEL POWER MOSFET 文件：326.95 Kbytes Page：7 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNEL POWER MOSFET 文件：326.95 Kbytes Page：7 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNEL POWER MOSFET 文件：326.95 Kbytes Page：7 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNEL POWER MOSFET 文件：326.95 Kbytes Page：7 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | |
1N65G产品属性
- 类型
描述
- 型号
1N65G
- 制造商
UTC-IC
- 制造商全称
UTC-IC
- 功能描述
1.2A, 650V N-CHANNEL POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SMD |
12+ |
2 |
19000 |
普通 |
|||
Microsemi(美高森美) |
24+ |
DIP-14 |
907 |
代工代料,一站式配套服务。 |
|||
TI |
N/A |
10 |
|||||
VOLTAGE MULTIPLIERS |
23+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
24+ |
N/A |
69000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
UMW/广东友台半导体 |
25+ |
SOT-223-4 |
32360 |
UMW/广东友台半导体全新特价1N65G即刻询购立享优惠#长期有货 |
|||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
UTC |
21+ |
3540 |
TO-251-3 [TM3] |
||||
UMW 友台 |
23+ |
TO-252 |
22500 |
原装正品，实单请联系 |
|||
SG |
2318+ |
DIP |
4862 |
只做进口原装!假一赔百!自己库存价优! |
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1N65G规格书下载地址
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1N65G数据表相关新闻
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DdatasheetPDF页码索引
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