silicon diode

SILICON DIODE

Diode Switching 35V 0.02A 2-Pin DO-7

Small Signal Schottky Diodes

VOLTAGE RANGE: 60 V POWER DISSIPATION:400 mW Features ◇ For general purpose applications ◇ Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasi

SCHOTTKY DIODES

SCHOTTKY DIODES • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices.

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • For general purpose applications • Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast

15mA Axial Leaded Schottky Barrier Diodes

Features ● For general purpose applications ● Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switc

SMALL SIGNAL SCHOTTKY DIODE

VOLTAGE RANGE: 60 V POWER DISSIPATION:400 mW FEATURES ◇ For general purpose applications ◇ fast switching and low logic level applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it id

SMALL SIGNAL SCHOTTKY DIODE

Features ● For general purpose applications ● Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switc

SMALL SIGNAL SCHOTTKY DIODE

VOLTAGE RANGE: 60 V POWER DISSIPATION:400 mW FEATURES ◇ For general purpose applications ◇ fast switching and low logic level applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it id

SCHOOTTKY BARRIER DIODES

SCHOOTTKY BARRIER DIODES FEATURES Hermetically Sealed Metalurgically Bonded Double Plug Construction

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • For general purpose applications • Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast

SCHOTTKY BARRIER SWITCHING DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance

Schottky Diodes

Features • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low for ward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast swit

SMALL SIGNAL SCHOTTKY DIODE

DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range.

Small-Signal Diode Schottky Diodes

Features ◆ For general purpose applications ◆ Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching

SCHOTTKY BARRIER DIODES

VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diode

400 mWatt Small Signal Schottky Diode 60 to 70 Volts

Features • High Reverse Breakdown Voltage • Low Forward Voltage Drop • For General Purpose Application

400 mWatt Small Signal Schottky Diode 60 to 70 Volts

Features • Moisture Sensitivity: Level 1 per J-STD-020C • High Reverse Breakdown Voltage • Low Forward Voltage Drop • For General Purpose Application • Marking : Cathode band and type number • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information

SCHOTTKY BARRIER DIODES

VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diode

SMALL SIGNAL SCHOTTKY DIODES

FEATURES For general purpose applications fast switching and low logic level applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and cou

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Fast Switching Time ● Low Reverse Capacitance ● Surface Mount Package Ideally Suited for Automatic Insertion

SMALL SIGNAL DIODES

Features ● Low Forward Voltage Drop ● Guard Ring Constuction for Transient Protection ● Fast Switching Time ● Low Reverse Capacitance ● Surface Mount Package ldeally Suited for Automatic Insertion

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features: • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance • Surface Mount Package Ideally Suited for Automatic Insertion

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance • Surface Mount Package Ideally Suited for Automated Insertion • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 3 and 4)

Low Forward Voltage Dropnull

Features ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Fast Switching Time ● Low Reverse Capacitance ● Surface Mount Package Ideally Suited for Automatic Insertion

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance • Surface Mount Package Ideally Suited for Automatic Insertion

Surface Mount Schottky Barrier Diode

Voltage Range 60 Volts 400m Watts Power Dissipation Features ◇ Low forward voltage drop ◇ Guard Ring Construction for Transient Protection ◇ Fast switching time ◇ Low Reverse Capacitance ◇ Surface mount package ideally suited for automatic insertion

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance • Surface Mount Package Ideally Suited for Automatic Insertion

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance • Surface Mount Package Ideally Suited for Automatic Insertion

SILICON SCHOTTKY BARRIER DIODE

SILICON SCHOTTKY BARRIER DIODE for general purpose applications

SILICON SCHOTTKY BARRIER DIODE

SILICON SCHOTTKY BARRIER DIODE for general purpose applications

GaAs INFRARED EMITTING DIODE

DESCRIPTION • The 1N6264 is a 940 nm LED in a narrow angle, TO-46 package. FEATURES • Good optical to mechanical alignment • Mechanically and wavelength matched to the TO-18 series phototransistor • Hermetically sealed package • High irradiance level • (*) Indicates JEDEC registered values

GaAs INFRARED EMITTING DIODE

DESCRIPTION • The 1N6265 is a 940 nm LED in a narrow angle, TO-46 package. FEATURES • Good optical to mechanical alignment • Mechanically and wavelength matched to the TO-18 series phototransistor • Hermetically sealed package • High irradiance level • (*) Indicates JEDEC registered values

GaAs INFRARED EMITTING DIODE

DESCRIPTION • The 1N6266 is a 940 nm LED in a narrow angle, TO-46 package. FEATURES • Good optical to mechanical alignment • Mechanically and wavelength matched to the TO-18 series phototransistor • Hermetically sealed package • High irradiance level • (*) Indicates JEDEC registered values

TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 200 Volts PPK : 1500 Watts FEATURES : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V

TRANSZORB Transient Voltage Suppressors

Features • Underwriters Laboratory Recognition under UL standard for safety 497B: Isolated Loop Circuit Protection • Glass passivated junction • 1500W peak pulse power capabililty on 10/1000µs waveform, repetition rate (duty cycle): 0.05 • Excellent clamping capability • Low incremental surge

Unidirectional & Bidirectional Transient Voltage Suppressors

DESCRIPTION The Transient Voltage Suppressor (TVS) series for 1N5908 & 1N6267-1N6303A are JEDEC registered selections for unidirectional devices. The popular series of 1.5KE6.8-1.5KE400CA offers similar voltages with an extended voltage range and also provides bidirectional options with a C o

TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR

VOLTAGE RANGE - 6.8 to 440 Volts PEAK PULSE POWER - 1500 Watts FEATURES * Glass passivated junction * 1500 Watts Peak Pulse Power capability on 10/1000 µs waveform * Excellent clamping capability * Low zener impedance * Fast response time

TRANSIENT ABSORPTION ZENER

DESCRIPTION The Transient Voltage Suppressor (TVS) series for 1N5908 & 1N6267-1N6303A are JEDEC registered selections for unidirectional devices. The popular series of 1.5KE6.8-1.5KE400CA offers similar voltages with an extended voltage range and also provides bidirectional options with a C o

TRANSIENT VOLTAGE SUPPRESSOR

FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Glass passivated junction ♦ 1500W peak pulse power capability on 10/1000ns waveform repetition rate (duty cycle): 0.05 ♦ Excellent clamping capability ♦ Low incremental surge resistance ♦ Fast response

GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

VOLTAGE - 6.8 TO 440 Volts 1500 Watt Peak Power 5.0 Watt Steady State FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Glass passivated chip junction in Molded Plastic package ● 1500W surge capability at 1ms ● Excellent clamping capability

TRANSIENT VOLTAGE SUPPRESSOR

BREAKDOWN VOLTAGE: 6.8 --- 200 V PEAK PULSE POWER: 1500 W FEATURES ◇ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◇ Glass passivated junction ◇ 1500W peak pulse power capability with a 10/1000μs waveform, repetition rate (duty cycle): 0.05 ◇ Excellent clam

POWER 1500Watts VOLTAGE 6.8 to 440 Volts

Features · Underwriters Laboratory recognition under UL standard for safety 497B : Isolated loop circuit protection · Glass passivated junction · 1500W peak pulse power capability on 10/1000μS waveform, repetition rate(duty cycle) : 0.05 · Excellent clamping capability · Low incremental surge

GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

VOLTAGE- 6.8 TO 440 Volts 1500 Watt Peak Power 5.0 Watt Steady State FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94 V-O • Glass passivated chip junction in Molded Plastic package • 1500W surge capability at 1ms • Excellent clamping capability • Low

TRANSIENT VOLTAGE SUPPRESSOR

BREAKDOWN VOLTAGE：6.8- 440V PEAK PULSE POWER：1500W FEATURES • 1500 Watts Peak Power capability on 10/1000 us waveform • Excellent clamping capability • Low zener impedance • Fast response time

1500W TRANSIENT VOLTAGE SUPPRESSOR

FEATURES ● PLASTIC PACKAGE HAS UNDERWRITERS LABORATORY FLAMMABILITY CLASSIFICATION 94V-0 ● 1500W SURGE CAPABILITY AT 1ms ● EXCELLENT CLAMPING CAPABILITY ● LOW ZENER IMPEDANCE ● FAST RESPONSE TIME:TYPICALLY LESS THAN 1.0 PS FROM 0 VOLTS TO BV MIN ● TYPICAL IR LESS THAN 1μA ABOVE 10V ● HIGH T

TRANSIENT VOLTAGE SUPPRESSOR

FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Glass passivated junction ♦ 1500W peak pulse power capability on 10/1000ns waveform repetition rate (duty cycle): 0.05 ♦ Excellent clamping capability ♦ Low incremental surge resistance ♦ Fast response

Transient Voltage Suppressors Peak Pulse Power 1500W Breakdown Voltage 6.8 to 550V

Peak Pulse Power 1500W Breakdown Voltage 6.8 to 550V Features ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Glass passivated junction ● 1500W peak pulse power capabililty on 10/1000us waveform, repetition rate (duty cycle): 0.05 ● Excellent clamping

BREAKDOWN VOLTAGE: 6.8 --- 200V PEAK PULSE POWER: 1500 W

Features ◇ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◇ 1500W surge capability at 10 x 1000 us waveform ◇ Excellent clamping capability ◇ Low Dynamic impedance ◇ Fast response time: Typically less than 1.0ps from 0 volts to VBR for unidirectional and 5.0 ns

TRANSZORB® Transient Voltage Suppressors

FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 • Excellent clamping capability • Very fast response time • Low incremental surge resistance • AEC

1500 Watts Axial Leaded Transient Voltage Suppressor

Features • 1500W surge capability at 1ms • Excellent clamping capability • Low zener impedance • Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) • Typical IR less then 1mA above 10V

Transient Voltage Suppressor Diodes

Voltage Range 6.8 to 440 Volts 1500 Watts Peak Power 5.0 Watts Steady State Features ◇ UL Recognized File # E-96005 ◇ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◇ Exceeds environmental standards of MIL-STD-19500 ◇ 1500W surge capability at 10 x 100 us wavef

TRANSIENT VOLTAGE SUPPRESSOR

Reverse Voltage - 6.8 to 400 Volts PEAK PULSE POWER-1500 Watts FEATURES • 1500 Watts Pulse capability • Excellent clamping capability • Low incremental surge resistance • Fast response time • High temperature soldering guaranteed: 260 C/10 seconds at terminals • Component inaccordance to R

1500 WattsTransient Voltage Suppressor Diodes

Features ◇ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◇ 1500W surge capability at 10 x 1000 us waveform ◇ Excellent clamping capability ◇ Low Dynamic impedance ◇ Fast response time: Typically less than 1.0ps from 0 volts to VBR for unidirectional and 5.0 ns

UNIDIRECTIONAL AND BIDRECTIONAL

UNIDIRECTIONAL AND BIDRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS FEATURES • Available in both Unidirectional and Bidirectional (add C or CA suffix for bidirectional) • Voltages from 6.8 to 180 V Breakdown (VBR) • Suppresses transients up to 1500 watts @ 10/1000 μs (see Figure 1) • Power rating

TRANSIENT VOLTAGE SUPPRESSOR

Features · Underwriters Laboratory recognition under UL standard for safety 497B : Isolated loop circuit protection · Glass passivated junction · 1500W peak pulse power capability on 10/1000μs waveform, repetition rate(duty cycle) : 0.05% · Excellent clamping capability · Low incremen

TRANSZORB® Transient Voltage Suppressors

FEATURES • Glass passivated chip junction • Available in unidirectional and bidirectional • 1500 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 • Excellent clamping capability • Very fast response time • Low incremental surge resistance • AEC

1500 WattsTransient Voltage Suppressor Diodes

Features ◇ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◇ 1500W surge capability at 10 x 1000 us waveform ◇ Excellent clamping capability ◇ Low Dynamic impedance ◇ Fast response time: Typically less than 1.0ps from 0 volts to VBR for unidirectional and 5.0 ns

TRANSZORB짰 Transient Voltage Suppressors

FEATURES • Glass passivated chip junction • Available in unidirectional and bidirectional • 1500 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 • Excellent clamping capability • Very fast response time • Low incremental surge resistance • AEC

TRANSIENT VOLTAGE SUPPRESSOR

Features · Underwriters Laboratory recognition under UL standard for safety 497B : Isolated loop circuit protection · Glass passivated junction · 1500W peak pulse power capability on 10/1000μs waveform, repetition rate(duty cycle) : 0.05 · Excellent clamping capability · Low incremental s