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1N626价格
参考价格:¥0.0000
型号:1N626 品牌:Misc 备注:这里有1N626多少钱,2024年最近7天走势,今日出价,今日竞价,1N626批发/采购报价,1N626行情走势销售排行榜,1N626报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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1N626 | silicondiode SILICONDIODE | ETC1List of Unclassifed Manufacturers 未分类制造商 | ||
SMALLSIGNALSCHOTTKYDIODE VOLTAGERANGE:60VPOWERDISSIPATION:400mW FEATURES ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitid | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | |||
400mWattSmallSignalSchottkyDiode60to70Volts Features •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication | CHENYIShanghai Lunsure Electronic Tech 商朗电子上海商朗电子科技有限公司 | |||
400mWattSmallSignalSchottkyDiode60to70Volts Features •MoistureSensitivity:Level1perJ-STD-020C •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication •Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
SCHOTTKYBARRIERDIODES VRRM:70V,60V FEATURES: •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode | EIC EIC | |||
SCHOOTTKYBARRIERDIODES SCHOOTTKYBARRIERDIODES FEATURES HermeticallySealed MetalurgicallyBonded DoublePlugConstruction | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SMALLSIGNALSCHOTTKYDIODES FEATURES •Forgeneralpurposeapplications •Metal-on-siliconjunctionSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfastswitching makeitidealforprotectionofMOSdevices,steering,biasingand couplingdiodesforfast | JINANJINGHENGJinan Jingheng (Group) Co.,Ltd 晶恒集团济南晶恒电子有限责任公司 | |||
SmallSignalSchottkyDiodes VOLTAGERANGE:60VPOWERDISSIPATION:400mW Features ◇Forgeneralpurposeapplications ◇Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasi | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
SCHOTTKYDIODES SCHOTTKYDIODES •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltagedrop andfastswitchingmakeitidealforprotectionofMOSdevices. | DIGITRON Digitron Semiconductors | |||
SMALLSIGNALSCHOTTKYDIODES FEATURES •Forgeneralpurposeapplications •Metal-on-siliconjunctionSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfastswitching makeitidealforprotectionofMOSdevices,steering,biasingand couplingdiodesforfast | JINGHENG Jinan Jing Heng Electronics Co., Ltd. | |||
SMALLSIGNALSCHOTTKYDIODE Features ●Forgeneralpurposeapplications ●Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiodesfor fastswitc | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
15mAAxialLeadedSchottkyBarrierDiodes Features ●Forgeneralpurposeapplications ●Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiodesfor fastswitc | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
SMALLSIGNALSCHOTTKYDIODE VOLTAGERANGE:60VPOWERDISSIPATION:400mW FEATURES ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitid | DSK Diode Semiconductor Korea | |||
SMALLSIGNALSCHOTTKYDIODE DESCRIPTION Metaltosiliconjunctiondiodefeaturinghighbreakdown,lowturn-onvoltageandultrafastswitching. PrimarlyintendedforhighlevelUHF/VHFdetectionandpulseapplicationwithbroaddynamicrange. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
SCHOTTKYBARRIERSWITCHINGDIODE Features •LowForwardVoltageDrop •GuardRingConstructionforTransient Protection •FastSwitchingTime •LowReverseCapacitance | DIODESDiodes Incorporated 达尔科技 | |||
SchottkyDiodes Features •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichis protectedbyaPNjunctionguardring.Thelowfor wardvoltagedropandfastswitchingmakeitideal forprotectionofMOSdevices,steering,biasing andcouplingdiodesforfastswit | GE GE Industrial Company | |||
Small-SignalDiodeSchottkyDiodes Features ◆Forgeneralpurposeapplications ◆Metal-on-siliconSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfast switchingmakeitidealforprotectionofMOSdevices,steering, biasingandcouplingdiodesforfastswitching | Good-Ark Good-Ark | |||
SCHOTTKYBARRIERDIODES VRRM:70V,60V FEATURES: •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode | SYNSEMI SynSemi,Inc. | |||
SMALLSIGNALSCHOTTKYDIODES FEATURES Forgeneralpurposeapplications fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcou | SAMYANGSAMYANG ELECTRONICS CO.,LTD. SAMYANGSAMYANG ELECTRONICS CO.,LTD. | |||
SURFACEMOUNTSCHOTTKYBARRIERDIODE Features ●LowForwardVoltageDrop ●GuardRingConstructionforTransientProtection ●FastSwitchingTime ●LowReverseCapacitance ●SurfaceMountPackageIdeallySuitedforAutomaticInsertion | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedforAutomaticInsertion | DIODESDiodes Incorporated 达尔科技 | |||
SurfaceMountSchottkyBarrierDiode VoltageRange60Volts400mWattsPowerDissipation Features ◇Lowforwardvoltagedrop ◇GuardRingConstructionforTransientProtection ◇Fastswitchingtime ◇LowReverseCapacitance ◇Surfacemountpackageideallysuitedforautomaticinsertion | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | |||
SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •Lead,HalogenandAntimonyFree,RoHSCompliantGreenDevice(Notes3and4) | DIODESDiodes Incorporated 达尔科技 | |||
LowForwardVoltageDropnull Features ●LowForwardVoltageDrop ●GuardRingConstructionforTransientProtection ●FastSwitchingTime ●LowReverseCapacitance ●SurfaceMountPackageIdeallySuitedforAutomaticInsertion | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | |||
SURFACEMOUNTSCHOTTKYBARRIERDIODE Features: •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedforAutomaticInsertion | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
SMALLSIGNALDIODES Features ●LowForwardVoltageDrop ●GuardRingConstuctionforTransientProtection ●FastSwitchingTime ●LowReverseCapacitance ●SurfaceMountPackageldeallySuitedforAutomaticInsertion | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedforAutomaticInsertion | DIODESDiodes Incorporated 达尔科技 | |||
SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedforAutomaticInsertion | DIODESDiodes Incorporated 达尔科技 | |||
SILICONSCHOTTKYBARRIERDIODE SILICONSCHOTTKYBARRIERDIODEforgeneralpurposeapplications | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
SILICONSCHOTTKYBARRIERDIODE SILICONSCHOTTKYBARRIERDIODEforgeneralpurposeapplications | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
GaAsINFRAREDEMITTINGDIODE DESCRIPTION •The1N6264isa940nmLEDinanarrowangle,TO-46package. FEATURES •Goodopticaltomechanicalalignment •MechanicallyandwavelengthmatchedtotheTO-18seriesphototransistor •Hermeticallysealedpackage •Highirradiancelevel •(*)IndicatesJEDECregisteredvalues | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
GaAsINFRAREDEMITTINGDIODE DESCRIPTION •The1N6265isa940nmLEDinanarrowangle,TO-46package. FEATURES •Goodopticaltomechanicalalignment •MechanicallyandwavelengthmatchedtotheTO-18seriesphototransistor •Hermeticallysealedpackage •Highirradiancelevel •(*)IndicatesJEDECregisteredvalues | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
GaAsINFRAREDEMITTINGDIODE DESCRIPTION •The1N6266isa940nmLEDinanarrowangle,TO-46package. FEATURES •Goodopticaltomechanicalalignment •MechanicallyandwavelengthmatchedtotheTO-18seriesphototransistor •Hermeticallysealedpackage •Highirradiancelevel •(*)IndicatesJEDECregisteredvalues | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR VOLTAGE-6.8TO440Volts1500WattPeakPower5.0WattSteadyState FEATURES ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O ●GlasspassivatedchipjunctioninMoldedPlasticpackage ●1500Wsurgecapabilityat1ms ●Excellentclampingcapability | TRSYS Transys Electronics | |||
TRANSIENTVOLTAGESUPPRESSOR VBR:6.8-200Volts PPK:1500Watts FEATURES: *1500Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V | EIC EIC | |||
Unidirectional&BidirectionalTransientVoltageSuppressors DESCRIPTION TheTransientVoltageSuppressor(TVS)seriesfor1N5908&1N6267-1N6303AareJEDECregisteredselectionsforunidirectionaldevices.Thepopularseriesof1.5KE6.8-1.5KE400CAofferssimilarvoltageswithanextendedvoltagerangeandalsoprovidesbidirectionaloptionswithaCo | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
TRANSZORBTransientVoltageSuppressors Features •UnderwritersLaboratoryRecognitionunderULstandardforsafety497B:IsolatedLoopCircuitProtection •Glasspassivatedjunction •1500Wpeakpulsepowercapabililtyon10/1000µswaveform,repetitionrate(dutycycle):0.05 •Excellentclampingcapability •Lowincrementalsurge | VishayVishay Siliconix 威世科技 | |||
TransientVoltageSuppressorDiodes VoltageRange6.8to440Volts 1500WattsPeakPower5.0WattsSteadyState Features ◇ULRecognizedFile#E-96005 ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇ExceedsenvironmentalstandardsofMIL-STD-19500 ◇1500Wsurgecapabilityat10x100uswavef | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | |||
TRANSIENTVOLTAGESUPPRESSOR BREAKDOWNVOLTAGE:6.8---200V PEAKPULSEPOWER:1500W FEATURES ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇Glasspassivatedjunction ◇1500Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.05 ◇Excellentclam | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | |||
POWER1500WattsVOLTAGE6.8to440Volts Features ·UnderwritersLaboratoryrecognitionunderULstandardforsafety497B:Isolatedloopcircuitprotection ·Glasspassivatedjunction ·1500Wpeakpulsepowercapabilityon10/1000μSwaveform,repetitionrate(dutycycle):0.05 ·Excellentclampingcapability ·Lowincrementalsurge | DAESAN Daesan Electronics Corp. | |||
GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR VOLTAGE-6.8TO440Volts1500WattPeakPower5.0WattSteadyState FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •GlasspassivatedchipjunctioninMoldedPlasticpackage •1500Wsurgecapabilityat1ms •Excellentclampingcapability •Low | MDEMDE semiconductor MDE半导体公司 | |||
TRANSIENTVOLTAGESUPPRESSOR BREAKDOWNVOLTAGE:6.8-440VPEAKPULSEPOWER:1500W FEATURES •1500WattsPeakPowercapabilityon10/1000uswaveform •Excellentclampingcapability •Lowzenerimpedance •Fastresponsetime | CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD 重庆平伟实业重庆平伟实业股份有限公司 | |||
TECHNICALSPECIFICATIONSOFTRANSIENTVOLTAGESUPPRESSOR VOLTAGERANGE-6.8to440VoltsPEAKPULSEPOWER-1500Watts FEATURES *Glasspassivatedjunction *1500WattsPeakPulsePowercapabilityon 10/1000µswaveform *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime | DCCOMDc Components 直流元件直流元件有限公司 | |||
TRANSIENTVOLTAGESUPPRESSOR FEATURES ♦PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ♦Glasspassivatedjunction ♦1500Wpeakpulsepowercapabilityon10/1000nswaveformrepetitionrate(dutycycle):0.05 ♦Excellentclampingcapability ♦Lowincrementalsurgeresistance ♦Fastresponse | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
TRANSIENTABSORPTIONZENER DESCRIPTION TheTransientVoltageSuppressor(TVS)seriesfor1N5908&1N6267-1N6303AareJEDECregisteredselectionsforunidirectionaldevices.Thepopularseriesof1.5KE6.8-1.5KE400CAofferssimilarvoltageswithanextendedvoltagerangeandalsoprovidesbidirectionaloptionswithaCo | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
BREAKDOWNVOLTAGE:6.8---200VPEAKPULSEPOWER:1500W Features ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇1500Wsurgecapabilityat10x1000uswaveform ◇Excellentclampingcapability ◇LowDynamicimpedance ◇Fastresponsetime:Typicallylessthan1.0psfrom0voltstoVBRforunidirectionaland5.0ns | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
TRANSZORB®TransientVoltageSuppressors FEATURES •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •1500Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitiverate(dutycycle):0.01 •Excellentclampingcapability •Veryfastresponsetime •Lowincrementalsurgeresistance •AEC | VishayVishay Siliconix 威世科技 | |||
TransientVoltageSuppressorsPeakPulsePower1500WBreakdownVoltage6.8to550V PeakPulsePower1500WBreakdownVoltage6.8to550V Features ●PlasticpackagehasUnderwritersLaboratoryFlammability Classification94V-0 ●Glasspassivatedjunction ●1500Wpeakpulsepowercapabililtyon10/1000uswaveform, repetitionrate(dutycycle):0.05 ●Excellentclamping | Good-Ark Good-Ark | |||
1500WTRANSIENTVOLTAGESUPPRESSOR FEATURES ●PLASTICPACKAGEHASUNDERWRITERSLABORATORYFLAMMABILITYCLASSIFICATION94V-0 ●1500WSURGECAPABILITYAT1ms ●EXCELLENTCLAMPINGCAPABILITY ●LOWZENERIMPEDANCE ●FASTRESPONSETIME:TYPICALLYLESSTHAN1.0PSFROM0VOLTSTOBVMIN ●TYPICALIRLESSTHAN1μAABOVE10V ●HIGHT | SIRECTSirectifier Global Corp. 矽莱克半导体矽莱克半导体有限公司(深圳) | |||
TRANSIENTVOLTAGESUPPRESSOR FEATURES ♦PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ♦Glasspassivatedjunction ♦1500Wpeakpulsepowercapabilityon10/1000nswaveformrepetitionrate(dutycycle):0.05 ♦Excellentclampingcapability ♦Lowincrementalsurgeresistance ♦Fastresponse | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
UNIDIRECTIONALANDBIDRECTIONAL UNIDIRECTIONALANDBIDRECTIONAL TRANSIENTVOLTAGESUPPRESSORS FEATURES •AvailableinbothUnidirectionalandBidirectional(addCorCAsuffixforbidirectional) •Voltagesfrom6.8to180VBreakdown(VBR) •Suppressestransientsupto1500watts@10/1000μs(seeFigure1) •Powerrating | DIGITRON Digitron Semiconductors | |||
1500WattsAxialLeadedTransientVoltageSuppressor Features •1500Wsurgecapabilityat1ms •Excellentclampingcapability •Lowzenerimpedance •Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) •TypicalIRlessthen1mAabove10V | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
1500WattsTransientVoltageSuppressorDiodes Features ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇1500Wsurgecapabilityat10x1000uswaveform ◇Excellentclampingcapability ◇LowDynamicimpedance ◇Fastresponsetime:Typicallylessthan1.0psfrom0voltstoVBRforunidirectionaland5.0ns | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
TRANSIENTVOLTAGESUPPRESSOR ReverseVoltage-6.8to400Volts PEAKPULSEPOWER-1500Watts FEATURES •1500WattsPulsecapability •Excellentclampingcapability •Lowincrementalsurgeresistance •Fastresponsetime •Hightemperaturesolderingguaranteed:260C/10secondsatterminals •ComponentinaccordancetoR | GXELECTRONICSShandong Xinghe Minghui Electronics Co., Ltd 星合明辉电子山东星合明辉电子有限公司 | |||
TRANSZORB®TransientVoltageSuppressors FEATURES •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •1500Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitiverate(dutycycle):0.01 •Excellentclampingcapability •Veryfastresponsetime •Lowincrementalsurgeresistance •AEC | VishayVishay Siliconix 威世科技 | |||
UNIDIRECTIONALANDBIDRECTIONAL UNIDIRECTIONALANDBIDRECTIONAL TRANSIENTVOLTAGESUPPRESSORS FEATURES •AvailableinbothUnidirectionalandBidirectional(addCorCAsuffixforbidirectional) •Voltagesfrom6.8to180VBreakdown(VBR) •Suppressestransientsupto1500watts@10/1000μs(seeFigure1) •Powerrating | DIGITRON Digitron Semiconductors | |||
1500WattsTransientVoltageSuppressorDiodes Features ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇1500Wsurgecapabilityat10x1000uswaveform ◇Excellentclampingcapability ◇LowDynamicimpedance ◇Fastresponsetime:Typicallylessthan1.0psfrom0voltstoVBRforunidirectionaland5.0ns | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
TRANSZORBTransientVoltageSuppressors FEATURES •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •1500Wpeakpulsepowercapabilitywitha10/1000µswaveform,repetitiverate(dutycycle):0.01 •Excellentclampingcapability •Veryfastresponsetime •Lowincrementalsurgeresistance •Sol | VishayVishay Siliconix 威世科技 | |||
1500WattsAxialLeadedTransientVoltageSuppressor Features •1500Wsurgecapabilityat1ms •Excellentclampingcapability •Lowzenerimpedance •Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) •TypicalIRlessthen1mAabove10V | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
BREAKDOWNVOLTAGE:6.8---200VPEAKPULSEPOWER:1500W Features ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇1500Wsurgecapabilityat10x1000uswaveform ◇Excellentclampingcapability ◇LowDynamicimpedance ◇Fastresponsetime:Typicallylessthan1.0psfrom0voltstoVBRforunidirectionaland5.0ns | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 |
1N626产品属性
- 类型
描述
- 型号
1N626
- 功能描述
silicon diode
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON |
23+ |
DO-201AD-2 |
3000 |
全新原装正品!一手货源价格优势! |
|||
ST/意法半导体 |
2023 |
DO-35 |
6000 |
公司原装现货/支持实单 |
|||
TOSHIBA |
23+ |
SOD123 |
9526 |
||||
GI |
最新 |
1200 |
原装正品 现货供应 价格优 |
||||
DIODES/美台 |
21+ |
SOD-123 |
6004 |
||||
DIODES/美台 |
22+ |
SOD-123 |
16571 |
优势价格原装现货提供BOM一站式配单服务 |
|||
ST |
21+ |
DO-35 |
50000 |
全新原装正品现货,支持订货 |
|||
ST/意法半导体 |
2023+ |
DO-35 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
SUNMATE(森美特) |
21+ |
原装现货 |
1000000 |
现货供应 数量有多 价格优势 |
|||
ST/意法 |
2122+ |
DO-35 |
35000 |
全新原装正品,优势渠道可含税,假一赔十 |
1N626规格书下载地址
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- 1N6145A
- 1N6135
- 1N6129A
- 1N6121USJANTX
- 1N6118A
- 1N6117A
- 1N6114AUS
- 1N6113AUS
- 1N6113A
- 1N6112AJANTXV
- 1N6112A
- 1N6111A
- 1N6110A
- 1N6107A
- 1N6104AJANTX
- 1N6103AUS
- 1N6098
1N626数据表相关新闻
1N60G-SOT223R-B-TG_UTC代理商
1N60G-SOT223R-B-TG_UTC代理商
2023-3-71N6525 全套的高压二极管
全新原装进口,质量保证,宇集芯一对一服务您放心的品质,急速发货,VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试,以确保我们的客户收到最/高质量的二极管。
2021-5-181N6513 全套表面贴装二极管
全新原装进口,质量保证,宇集芯您放心的品质,VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试,以确保我们的客户收到最/高质量的二极管。
2021-5-141N6529 全套中高压二极管
全新原装进口,质量保证,宇集芯您放心的品质,VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试,以确保我们的客户收到最/高质量的二极管。
2021-5-131N6117代理渠道 ,进口原装
1N6117 代理渠道,进口原装
2020-10-191N5924BRLG,1N5927BG,1N6295AG,1N6296A,1N6297A,1N6298ARL4
1N5924BRLG,1N5927BG,1N6295AG,1N6296A,1N6297A,1N6298ARL4
2020-3-10
DdatasheetPDF页码索引
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