您好,欢迎来到114ic资料网！

芯片资料
  • 芯片资料
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第6388页 > 1N626

1N626价格

参考价格：￥0.0000

型号：1N626 品牌：Misc 备注：这里有1N626多少钱，2024年最近7天走势，今日出价，今日竞价，1N626批发/采购报价，1N626行情走势销售排行榜，1N626报价。
型号 功能描述 生产厂家&企业 LOGO 操作
1N626

silicondiode

SILICONDIODE

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1
1N6263

SMALLSIGNALSCHOTTKYDIODE

VOLTAGERANGE:60VPOWERDISSIPATION:400mW FEATURES ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitid

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
1N6263

400mWattSmallSignalSchottkyDiode60to70Volts

Features •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication

CHENYIShanghai Lunsure Electronic Tech

商朗电子上海商朗电子科技有限公司

CHENYI
1N6263

400mWattSmallSignalSchottkyDiode60to70Volts

Features •MoistureSensitivity:Level1perJ-STD-020C •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication •Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
1N6263

SCHOTTKYBARRIERDIODES

VRRM:70V,60V FEATURES: •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode

EIC

EIC

EIC
1N6263

SCHOOTTKYBARRIERDIODES

SCHOOTTKYBARRIERDIODES FEATURES HermeticallySealed MetalurgicallyBonded DoublePlugConstruction

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N6263

SMALLSIGNALSCHOTTKYDIODES

FEATURES •Forgeneralpurposeapplications •Metal-on-siliconjunctionSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfastswitching makeitidealforprotectionofMOSdevices,steering,biasingand couplingdiodesforfast

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集团济南晶恒电子有限责任公司

JINANJINGHENG
1N6263

SmallSignalSchottkyDiodes

VOLTAGERANGE:60VPOWERDISSIPATION:400mW Features ◇Forgeneralpurposeapplications ◇Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasi

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
1N6263

SCHOTTKYDIODES

SCHOTTKYDIODES •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltagedrop andfastswitchingmakeitidealforprotectionofMOSdevices.

DIGITRON

Digitron Semiconductors

DIGITRON
1N6263

SMALLSIGNALSCHOTTKYDIODES

FEATURES •Forgeneralpurposeapplications •Metal-on-siliconjunctionSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfastswitching makeitidealforprotectionofMOSdevices,steering,biasingand couplingdiodesforfast

JINGHENG

Jinan Jing Heng Electronics Co., Ltd.

JINGHENG
1N6263

SMALLSIGNALSCHOTTKYDIODE

Features ●Forgeneralpurposeapplications ●Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiodesfor fastswitc

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
1N6263

15mAAxialLeadedSchottkyBarrierDiodes

Features ●Forgeneralpurposeapplications ●Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiodesfor fastswitc

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
1N6263

SMALLSIGNALSCHOTTKYDIODE

VOLTAGERANGE:60VPOWERDISSIPATION:400mW FEATURES ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitid

DSK

Diode Semiconductor Korea

DSK
1N6263

SMALLSIGNALSCHOTTKYDIODE

DESCRIPTION Metaltosiliconjunctiondiodefeaturinghighbreakdown,lowturn-onvoltageandultrafastswitching. PrimarlyintendedforhighlevelUHF/VHFdetectionandpulseapplicationwithbroaddynamicrange.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
1N6263

SCHOTTKYBARRIERSWITCHINGDIODE

Features •LowForwardVoltageDrop •GuardRingConstructionforTransient Protection •FastSwitchingTime •LowReverseCapacitance

DIODESDiodes Incorporated

达尔科技

DIODES
1N6263

SchottkyDiodes

Features •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichis protectedbyaPNjunctionguardring.Thelowfor wardvoltagedropandfastswitchingmakeitideal forprotectionofMOSdevices,steering,biasing andcouplingdiodesforfastswit

GE

GE Industrial Company

GE
1N6263

Small-SignalDiodeSchottkyDiodes

Features ◆Forgeneralpurposeapplications ◆Metal-on-siliconSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfast switchingmakeitidealforprotectionofMOSdevices,steering, biasingandcouplingdiodesforfastswitching

Good-Ark

Good-Ark

Good-Ark
1N6263

SCHOTTKYBARRIERDIODES

VRRM:70V,60V FEATURES: •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode

SYNSEMI

SynSemi，Inc.

SYNSEMI
1N6263

SMALLSIGNALSCHOTTKYDIODES

FEATURES Forgeneralpurposeapplications fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcou

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

SAMYANG
1N6263W

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features ●LowForwardVoltageDrop ●GuardRingConstructionforTransientProtection ●FastSwitchingTime ●LowReverseCapacitance ●SurfaceMountPackageIdeallySuitedforAutomaticInsertion

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
1N6263W

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedforAutomaticInsertion

DIODESDiodes Incorporated

达尔科技

DIODES
1N6263W

SurfaceMountSchottkyBarrierDiode

VoltageRange60Volts400mWattsPowerDissipation Features ◇Lowforwardvoltagedrop ◇GuardRingConstructionforTransientProtection ◇Fastswitchingtime ◇LowReverseCapacitance ◇Surfacemountpackageideallysuitedforautomaticinsertion

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
1N6263W

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •Lead,HalogenandAntimonyFree,RoHSCompliantGreenDevice(Notes3and4)

DIODESDiodes Incorporated

达尔科技

DIODES
1N6263W

LowForwardVoltageDropnull

Features ●LowForwardVoltageDrop ●GuardRingConstructionforTransientProtection ●FastSwitchingTime ●LowReverseCapacitance ●SurfaceMountPackageIdeallySuitedforAutomaticInsertion

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
1N6263W

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features: •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedforAutomaticInsertion

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技（东莞）有限公司

SEMTECH_ELEC
1N6263W

SMALLSIGNALDIODES

Features ●LowForwardVoltageDrop ●GuardRingConstuctionforTransientProtection ●FastSwitchingTime ●LowReverseCapacitance ●SurfaceMountPackageldeallySuitedforAutomaticInsertion

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
1N6263W_

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedforAutomaticInsertion

DIODESDiodes Incorporated

达尔科技

DIODES
1N6263W-7-F

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedforAutomaticInsertion

DIODESDiodes Incorporated

达尔科技

DIODES
1N6263WS

SILICONSCHOTTKYBARRIERDIODE

SILICONSCHOTTKYBARRIERDIODEforgeneralpurposeapplications

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技（东莞）有限公司

SEMTECH_ELEC
1N6263WT

SILICONSCHOTTKYBARRIERDIODE

SILICONSCHOTTKYBARRIERDIODEforgeneralpurposeapplications

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技（东莞）有限公司

SEMTECH_ELEC
1N6264

GaAsINFRAREDEMITTINGDIODE

DESCRIPTION •The1N6264isa940nmLEDinanarrowangle,TO-46package. FEATURES •Goodopticaltomechanicalalignment •MechanicallyandwavelengthmatchedtotheTO-18seriesphototransistor •Hermeticallysealedpackage •Highirradiancelevel •(*)IndicatesJEDECregisteredvalues

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
1N6265

GaAsINFRAREDEMITTINGDIODE

DESCRIPTION •The1N6265isa940nmLEDinanarrowangle,TO-46package. FEATURES •Goodopticaltomechanicalalignment •MechanicallyandwavelengthmatchedtotheTO-18seriesphototransistor •Hermeticallysealedpackage •Highirradiancelevel •(*)IndicatesJEDECregisteredvalues

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
1N6266

GaAsINFRAREDEMITTINGDIODE

DESCRIPTION •The1N6266isa940nmLEDinanarrowangle,TO-46package. FEATURES •Goodopticaltomechanicalalignment •MechanicallyandwavelengthmatchedtotheTO-18seriesphototransistor •Hermeticallysealedpackage •Highirradiancelevel •(*)IndicatesJEDECregisteredvalues

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
1N6267

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR

VOLTAGE-6.8TO440Volts1500WattPeakPower5.0WattSteadyState FEATURES ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O ●GlasspassivatedchipjunctioninMoldedPlasticpackage ●1500Wsurgecapabilityat1ms ●Excellentclampingcapability

TRSYS

Transys Electronics

TRSYS
1N6267

TRANSIENTVOLTAGESUPPRESSOR

VBR:6.8-200Volts PPK:1500Watts FEATURES: *1500Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V

EIC

EIC

EIC
1N6267

Unidirectional&BidirectionalTransientVoltageSuppressors

DESCRIPTION TheTransientVoltageSuppressor(TVS)seriesfor1N5908&1N6267-1N6303AareJEDECregisteredselectionsforunidirectionaldevices.Thepopularseriesof1.5KE6.8-1.5KE400CAofferssimilarvoltageswithanextendedvoltagerangeandalsoprovidesbidirectionaloptionswithaCo

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N6267

TRANSZORBTransientVoltageSuppressors

Features •UnderwritersLaboratoryRecognitionunderULstandardforsafety497B:IsolatedLoopCircuitProtection •Glasspassivatedjunction •1500Wpeakpulsepowercapabililtyon10/1000µswaveform,repetitionrate(dutycycle):0.05 •Excellentclampingcapability •Lowincrementalsurge

VishayVishay Siliconix

威世科技

Vishay
1N6267

TransientVoltageSuppressorDiodes

VoltageRange6.8to440Volts 1500WattsPeakPower5.0WattsSteadyState Features ◇ULRecognizedFile#E-96005 ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇ExceedsenvironmentalstandardsofMIL-STD-19500 ◇1500Wsurgecapabilityat10x100uswavef

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
1N6267

TRANSIENTVOLTAGESUPPRESSOR

BREAKDOWNVOLTAGE:6.8---200V PEAKPULSEPOWER:1500W FEATURES ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇Glasspassivatedjunction ◇1500Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.05 ◇Excellentclam

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
1N6267

POWER1500WattsVOLTAGE6.8to440Volts

Features ·UnderwritersLaboratoryrecognitionunderULstandardforsafety497B:Isolatedloopcircuitprotection ·Glasspassivatedjunction ·1500Wpeakpulsepowercapabilityon10/1000μSwaveform,repetitionrate(dutycycle):0.05 ·Excellentclampingcapability ·Lowincrementalsurge

DAESAN

Daesan Electronics Corp.

DAESAN
1N6267

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR

VOLTAGE-6.8TO440Volts1500WattPeakPower5.0WattSteadyState FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •GlasspassivatedchipjunctioninMoldedPlasticpackage •1500Wsurgecapabilityat1ms •Excellentclampingcapability •Low

MDEMDE semiconductor

MDE半导体公司

MDE
1N6267

TRANSIENTVOLTAGESUPPRESSOR

BREAKDOWNVOLTAGE：6.8-440VPEAKPULSEPOWER：1500W FEATURES •1500WattsPeakPowercapabilityon10/1000uswaveform •Excellentclampingcapability •Lowzenerimpedance •Fastresponsetime

CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD

重庆平伟实业重庆平伟实业股份有限公司

CHONGQING
1N6267

TECHNICALSPECIFICATIONSOFTRANSIENTVOLTAGESUPPRESSOR

VOLTAGERANGE-6.8to440VoltsPEAKPULSEPOWER-1500Watts FEATURES *Glasspassivatedjunction *1500WattsPeakPulsePowercapabilityon 10/1000µswaveform *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime

DCCOMDc Components

直流元件直流元件有限公司

DCCOM
1N6267

TRANSIENTVOLTAGESUPPRESSOR

FEATURES ♦PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ♦Glasspassivatedjunction ♦1500Wpeakpulsepowercapabilityon10/1000nswaveformrepetitionrate(dutycycle):0.05 ♦Excellentclampingcapability ♦Lowincrementalsurgeresistance ♦Fastresponse

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N6267

TRANSIENTABSORPTIONZENER

DESCRIPTION TheTransientVoltageSuppressor(TVS)seriesfor1N5908&1N6267-1N6303AareJEDECregisteredselectionsforunidirectionaldevices.Thepopularseriesof1.5KE6.8-1.5KE400CAofferssimilarvoltageswithanextendedvoltagerangeandalsoprovidesbidirectionaloptionswithaCo

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N6267

BREAKDOWNVOLTAGE:6.8---200VPEAKPULSEPOWER:1500W

Features ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇1500Wsurgecapabilityat10x1000uswaveform ◇Excellentclampingcapability ◇LowDynamicimpedance ◇Fastresponsetime:Typicallylessthan1.0psfrom0voltstoVBRforunidirectionaland5.0ns

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
1N6267

TRANSZORB®TransientVoltageSuppressors

FEATURES •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •1500Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitiverate(dutycycle):0.01 •Excellentclampingcapability •Veryfastresponsetime •Lowincrementalsurgeresistance •AEC

VishayVishay Siliconix

威世科技

Vishay
1N6267

TransientVoltageSuppressorsPeakPulsePower1500WBreakdownVoltage6.8to550V

PeakPulsePower1500WBreakdownVoltage6.8to550V Features ●PlasticpackagehasUnderwritersLaboratoryFlammability Classification94V-0 ●Glasspassivatedjunction ●1500Wpeakpulsepowercapabililtyon10/1000uswaveform, repetitionrate(dutycycle):0.05 ●Excellentclamping

Good-Ark

Good-Ark

Good-Ark
1N6267

1500WTRANSIENTVOLTAGESUPPRESSOR

FEATURES ●PLASTICPACKAGEHASUNDERWRITERSLABORATORYFLAMMABILITYCLASSIFICATION94V-0 ●1500WSURGECAPABILITYAT1ms ●EXCELLENTCLAMPINGCAPABILITY ●LOWZENERIMPEDANCE ●FASTRESPONSETIME:TYPICALLYLESSTHAN1.0PSFROM0VOLTSTOBVMIN ●TYPICALIRLESSTHAN1μAABOVE10V ●HIGHT

SIRECTSirectifier Global Corp.

矽莱克半导体矽莱克半导体有限公司(深圳)

SIRECT
1N6267

TRANSIENTVOLTAGESUPPRESSOR

FEATURES ♦PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ♦Glasspassivatedjunction ♦1500Wpeakpulsepowercapabilityon10/1000nswaveformrepetitionrate(dutycycle):0.05 ♦Excellentclampingcapability ♦Lowincrementalsurgeresistance ♦Fastresponse

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N6267

UNIDIRECTIONALANDBIDRECTIONAL

UNIDIRECTIONALANDBIDRECTIONAL TRANSIENTVOLTAGESUPPRESSORS FEATURES •AvailableinbothUnidirectionalandBidirectional(addCorCAsuffixforbidirectional) •Voltagesfrom6.8to180VBreakdown(VBR) •Suppressestransientsupto1500watts@10/1000μs(seeFigure1) •Powerrating

DIGITRON

Digitron Semiconductors

DIGITRON
1N6267

1500WattsAxialLeadedTransientVoltageSuppressor

Features •1500Wsurgecapabilityat1ms •Excellentclampingcapability •Lowzenerimpedance •Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) •TypicalIRlessthen1mAabove10V

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
1N6267

1500WattsTransientVoltageSuppressorDiodes

Features ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇1500Wsurgecapabilityat10x1000uswaveform ◇Excellentclampingcapability ◇LowDynamicimpedance ◇Fastresponsetime:Typicallylessthan1.0psfrom0voltstoVBRforunidirectionaland5.0ns

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
1N6267

TRANSIENTVOLTAGESUPPRESSOR

ReverseVoltage-6.8to400Volts PEAKPULSEPOWER-1500Watts FEATURES •1500WattsPulsecapability •Excellentclampingcapability •Lowincrementalsurgeresistance •Fastresponsetime •Hightemperaturesolderingguaranteed:260C/10secondsatterminals •ComponentinaccordancetoR

GXELECTRONICSShandong Xinghe Minghui Electronics Co., Ltd

星合明辉电子山东星合明辉电子有限公司

GXELECTRONICS
1N6267A

TRANSZORB®TransientVoltageSuppressors

FEATURES •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •1500Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitiverate(dutycycle):0.01 •Excellentclampingcapability •Veryfastresponsetime •Lowincrementalsurgeresistance •AEC

VishayVishay Siliconix

威世科技

Vishay
1N6267A

UNIDIRECTIONALANDBIDRECTIONAL

UNIDIRECTIONALANDBIDRECTIONAL TRANSIENTVOLTAGESUPPRESSORS FEATURES •AvailableinbothUnidirectionalandBidirectional(addCorCAsuffixforbidirectional) •Voltagesfrom6.8to180VBreakdown(VBR) •Suppressestransientsupto1500watts@10/1000μs(seeFigure1) •Powerrating

DIGITRON

Digitron Semiconductors

DIGITRON
1N6267A

1500WattsTransientVoltageSuppressorDiodes

Features ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇1500Wsurgecapabilityat10x1000uswaveform ◇Excellentclampingcapability ◇LowDynamicimpedance ◇Fastresponsetime:Typicallylessthan1.0psfrom0voltstoVBRforunidirectionaland5.0ns

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
1N6267A

TRANSZORBTransientVoltageSuppressors

FEATURES •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •1500Wpeakpulsepowercapabilitywitha10/1000µswaveform,repetitiverate(dutycycle):0.01 •Excellentclampingcapability •Veryfastresponsetime •Lowincrementalsurgeresistance •Sol

VishayVishay Siliconix

威世科技

Vishay
1N6267A

1500WattsAxialLeadedTransientVoltageSuppressor

Features •1500Wsurgecapabilityat1ms •Excellentclampingcapability •Lowzenerimpedance •Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) •TypicalIRlessthen1mAabove10V

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
1N6267A

BREAKDOWNVOLTAGE:6.8---200VPEAKPULSEPOWER:1500W

Features ◇PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◇1500Wsurgecapabilityat10x1000uswaveform ◇Excellentclampingcapability ◇LowDynamicimpedance ◇Fastresponsetime:Typicallylessthan1.0psfrom0voltstoVBRforunidirectionaland5.0ns

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

1N626产品属性

  • 类型

    描述

  • 型号

    1N626

  • 功能描述

    silicon diode

1N626供应商更多...

更新时间：2024-4-18 9:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市能创芯电子科技有限公司
1N6267AG
ON
23+
DO-201AD-2
3000
全新原装正品!一手货源价格优势!
询价
深圳市柏芯特电子科技有限公司
1N6263
ST/意法半导体
2023
DO-35
6000
公司原装现货/支持实单
询价
深圳市昌和盛利电子有限公司
1N6263
TOSHIBA
23+
SOD123
9526
询价
深圳市凯盛恒创科技有限公司
1N6267A
GI
最新
1200
原装正品 现货供应 价格优
询价
深圳市保之丰科技有限公司
1N6263W-7-F
DIODES/美台
21+
SOD-123
6004
询价
深圳市大源实业科技有限公司
1N6263W-7-F
DIODES/美台
22+
SOD-123
16571
优势价格原装现货提供BOM一站式配单服务
询价
深圳市安富世纪电子有限公司
1N6263
ST
21+
DO-35
50000
全新原装正品现货,支持订货
询价
深圳市斌能达电子科技有限公司
1N6263
ST/意法半导体
2023+
DO-35
6000
全新原装深圳仓库现货有单必成
询价
深圳市辉晓电子科技有限公司
1N6263W
SUNMATE(森美特)
21+
原装现货
1000000
现货供应 数量有多 价格优势
询价
深圳市宝隆宏业科技有限公司
1N6263
ST/意法
2122+
DO-35
35000
全新原装正品,优势渠道可含税,假一赔十
询价

1N626芯片相关品牌

  • DATADELAY
  • Fujitsu
  • Hittite
  • JHE
  • Lattice
  • Microsemi
  • MOLEX10
  • NUMONYX
  • SHARMA
  • TI1
  • Vitec
  • ZSELEC

1N626规格书下载地址

1N626参数引脚图相关

1N626数据表相关新闻

  • 1N60G-SOT223R-B-TG_UTC代理商

    1N60G-SOT223R-B-TG_UTC代理商

    2023-3-7

  • 1N6525 全套的高压二极管

    全新原装进口，质量保证，宇集芯一对一服务您放心的品质，急速发货，VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试，以确保我们的客户收到最/高质量的二极管。

    2021-5-18

  • 1N6513 全套表面贴装二极管

    全新原装进口，质量保证，宇集芯您放心的品质，VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试，以确保我们的客户收到最/高质量的二极管。

    2021-5-14

  • 1N6529 全套中高压二极管

    全新原装进口，质量保证，宇集芯您放心的品质，VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试，以确保我们的客户收到最/高质量的二极管。

    2021-5-13

  • 1N6117代理渠道 ，进口原装

    1N6117 代理渠道，进口原装

    2020-10-19

  • 1N5924BRLG，1N5927BG，1N6295AG，1N6296A，1N6297A，1N6298ARL4

    1N5924BRLG，1N5927BG，1N6295AG，1N6296A，1N6297A，1N6298ARL4

    2020-3-10

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2024 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示