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1N6263价格
参考价格：￥0.3083
型号：1N6263 品牌：STMicroelectronics 备注：这里有1N6263多少钱，2025年最近7天走势，今日出价，今日竞价，1N6263批发/采购报价，1N6263行情走势销售排行榜，1N6263报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1N6263 | SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. | STMICROELECTRONICS 意法半导体 |   | |
1N6263 | SCHOTTKY BARRIER SWITCHING DIODE Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance | DIODES 美台半导体 | | |
1N6263 | Schottky Diodes Features • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low for ward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast swit | GE | | |
1N6263 | Small-Signal Diode Schottky Diodes Features ◆ For general purpose applications ◆ Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching | Good-Ark 固锝电子 | | |
1N6263 | SCHOTTKY BARRIER DIODES VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diode | SYNSEMI | | |
1N6263 | 400 mWatt Small Signal Schottky Diode 60 to 70 Volts Features • High Reverse Breakdown Voltage • Low Forward Voltage Drop • For General Purpose Application | CHENYI 商朗电子 | | |
1N6263 | SCHOOTTKY BARRIER DIODES SCHOOTTKY BARRIER DIODES FEATURES Hermetically Sealed Metalurgically Bonded Double Plug Construction | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
1N6263 | SMALL SIGNAL SCHOTTKY DIODES FEATURES • For general purpose applications • Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast | JINANJINGHENG 晶恒集团 | | |
1N6263 | SMALL SIGNAL SCHOTTKY DIODE VOLTAGE RANGE: 60 V POWER DISSIPATION:400 mW FEATURES ◇ For general purpose applications ◇ fast switching and low logic level applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it id | BILIN 银河微电 | | |
1N6263 | 400 mWatt Small Signal Schottky Diode 60 to 70 Volts Features • Moisture Sensitivity: Level 1 per J-STD-020C • High Reverse Breakdown Voltage • Low Forward Voltage Drop • For General Purpose Application • Marking : Cathode band and type number • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information | MCC | | |
1N6263 | SCHOTTKY BARRIER DIODES VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diode | EIC | | |
1N6263 | Small Signal Schottky Diodes VOLTAGE RANGE: 60 V POWER DISSIPATION:400 mW Features ◇ For general purpose applications ◇ Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasi | LUGUANG 鲁光电子 | | |
1N6263 | SCHOTTKY DIODES SCHOTTKY DIODES • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices. | DIGITRON | | |
1N6263 | SMALL SIGNAL SCHOTTKY DIODES FEATURES • For general purpose applications • Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast | JINGHENG 晶恒 | | |
1N6263 | SMALL SIGNAL SCHOTTKY DIODE Features ● For general purpose applications ● Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switc | SUNMATE 森美特 | | |
1N6263 | 15mA Axial Leaded Schottky Barrier Diodes Features ● For general purpose applications ● Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switc | SUNMATE 森美特 | | |
1N6263 | SMALL SIGNAL SCHOTTKY DIODE VOLTAGE RANGE: 60 V POWER DISSIPATION:400 mW FEATURES ◇ For general purpose applications ◇ fast switching and low logic level applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it id | DSK | | |
1N6263 | SMALL SIGNAL SCHOTTKY DIODES FEATURES For general purpose applications fast switching and low logic level applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and cou | SAMYANG 三阳电子 | | |
1N6263 | SMALL SIGNAL SCHOTTKY DIODE 文件：334.344 Kbytes Page：2 Pages | | ||
1N6263 | SMALL SIGNAL SCHOTTKY DIODES 文件：56.79 Kbytes Page：2 Pages | JINANJINGHENG 晶恒集团 | | |
1N6263 | For general purpose applicationsnull 文件：75.27 Kbytes Page：2 Pages | WINNERJOIN 永而佳 | | |
1N6263 | 封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 60V 15MA DO35 分立半导体产品 二极管 - 整流器 - 单 | STMICROELECTRONICS 意法半导体 | | |
1N6263 | 60 V、15 mA轴向RF和超高速开关信号肖特基二极管 | STMICROELECTRONICS 意法半导体 | | |
Low Forward Voltage Dropnull Features ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Fast Switching Time ● Low Reverse Capacitance ● Surface Mount Package Ideally Suited for Automatic Insertion | WINNERJOIN 永而佳 | | ||
SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Fast Switching Time ● Low Reverse Capacitance ● Surface Mount Package Ideally Suited for Automatic Insertion | SUNMATE 森美特 | | ||
SMALL SIGNAL DIODES Features ● Low Forward Voltage Drop ● Guard Ring Constuction for Transient Protection ● Fast Switching Time ● Low Reverse Capacitance ● Surface Mount Package ldeally Suited for Automatic Insertion | KEXIN 科信电子 | | ||
SURFACE MOUNT SCHOTTKY BARRIER DIODE Features: • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance • Surface Mount Package Ideally Suited for Automatic Insertion | SEMTECH_ELEC 先之科半导体 | | ||
SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance • Surface Mount Package Ideally Suited for Automatic Insertion | DIODES 美台半导体 | | ||
Surface Mount Schottky Barrier Diode Voltage Range 60 Volts 400m Watts Power Dissipation Features ◇ Low forward voltage drop ◇ Guard Ring Construction for Transient Protection ◇ Fast switching time ◇ Low Reverse Capacitance ◇ Surface mount package ideally suited for automatic insertion | TSC 台湾半导体 | | ||
SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance • Surface Mount Package Ideally Suited for Automated Insertion • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 3 and 4) | DIODES 美台半导体 | | ||
SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance • Surface Mount Package Ideally Suited for Automatic Insertion | DIODES 美台半导体 | | ||
SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance • Surface Mount Package Ideally Suited for Automatic Insertion | DIODES 美台半导体 | | ||
SILICON SCHOTTKY BARRIER DIODE SILICON SCHOTTKY BARRIER DIODE for general purpose applications | SEMTECH_ELEC 先之科半导体 | | ||
SILICON SCHOTTKY BARRIER DIODE SILICON SCHOTTKY BARRIER DIODE for general purpose applications | SEMTECH_ELEC 先之科半导体 | | ||
SURFACE MOUNT SCHOTTKY BARRIER DIODE 文件：384.115 Kbytes Page：3 Pages | | |||
60V Detection switch tube 文件：376.094 Kbytes Page：3 Pages | | |||
封装/外壳：DO-204AH，DO-35，轴向 包装：散装 描述：TRANSISTOR 分立半导体产品 二极管 - 整流器 - 单 | Central | | ||
Diode 文件：75.27 Kbytes Page：2 Pages | WINNERJOIN 永而佳 | | ||
Schottky | DIODES 美台半导体 | | ||
SURFACE MOUNT SCHOTTKY BARRIER DIODE 文件：116.15 Kbytes Page：3 Pages | DIODES 美台半导体 | | ||
SURFACE MOUNT SCHOTTKY BARRIER DIODE 文件：116.15 Kbytes Page：3 Pages | DIODES 美台半导体 | | ||
SOD-123 文件：96.54 Kbytes Page：2 Pages | WINNERJOIN 永而佳 | | ||
SURFACE MOUNT SCHOTTKY BARRIER DIODE 文件：116.15 Kbytes Page：3 Pages | DIODES 美台半导体 | | ||
SURFACE MOUNT SCHOTTKY BARRIER DIODE 文件：116.15 Kbytes Page：3 Pages | DIODES 美台半导体 | | ||
肖特基二极管 | CHINABASE 创基电子 | |
1N6263产品属性
- 类型
描述
- 型号
1N6263
- 功能描述
肖特基二极管与整流器 15mA 60 Volt
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
22+ |
SOD-123 |
6440 |
现货,原厂原装假一罚十! |
|||
Diodes(美台) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
DIODES/美台 |
23+ |
SOD123 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
ST/意法半导体 |
21+ |
DO-35 |
8860 |
只做原装,质量保证 |
|||
DIODES/美台 |
24+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
DIODES/美台 |
23+ |
SOD123 |
50000 |
原装正品 支持实单 |
|||
DIODES/美台 |
24+ |
SOD123 |
9600 |
原装现货,优势供应,支持实单! |
|||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
DIODES |
16+ |
SOD123 |
11900 |
进口原装现货/价格优势! |
|||
DIODES |
24+ |
SOD123 |
34300 |
原装现货假一赔十 |
1N6263规格书下载地址
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DdatasheetPDF页码索引
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