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位置：首页 > IC中文资料第402页 > 1N6263

1N6263价格

参考价格：￥0.3083

型号：1N6263 品牌：STMicroelectronics 备注：这里有1N6263多少钱，2024年最近7天走势，今日出价，今日竞价，1N6263批发/采购报价，1N6263行情走势销售排行榜，1N6263报价。
型号 功能描述 生产厂家&企业 LOGO 操作
1N6263

SMALLSIGNALSCHOTTKYDIODE

DESCRIPTION Metaltosiliconjunctiondiodefeaturinghighbreakdown,lowturn-onvoltageandultrafastswitching. PrimarlyintendedforhighlevelUHF/VHFdetectionandpulseapplicationwithbroaddynamicrange.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
1N6263

SCHOTTKYBARRIERSWITCHINGDIODE

Features •LowForwardVoltageDrop •GuardRingConstructionforTransient Protection •FastSwitchingTime •LowReverseCapacitance

DIODESDiodes Incorporated

达尔科技

DIODES
1N6263

SchottkyDiodes

Features •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichis protectedbyaPNjunctionguardring.Thelowfor wardvoltagedropandfastswitchingmakeitideal forprotectionofMOSdevices,steering,biasing andcouplingdiodesforfastswit

GE

GE Industrial Company

GE
1N6263

Small-SignalDiodeSchottkyDiodes

Features ◆Forgeneralpurposeapplications ◆Metal-on-siliconSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfast switchingmakeitidealforprotectionofMOSdevices,steering, biasingandcouplingdiodesforfastswitching

Good-Ark

Good-Ark

Good-Ark
1N6263

400mWattSmallSignalSchottkyDiode60to70Volts

Features •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication

CHENYIShanghai Lunsure Electronic Tech

商朗电子上海商朗电子科技有限公司

CHENYI
1N6263

SCHOTTKYBARRIERDIODES

VRRM:70V,60V FEATURES: •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode

SYNSEMI

SynSemi，Inc.

SYNSEMI
1N6263

400mWattSmallSignalSchottkyDiode60to70Volts

Features •MoistureSensitivity:Level1perJ-STD-020C •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication •Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
1N6263

SCHOTTKYBARRIERDIODES

VRRM:70V,60V FEATURES: •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode

EIC

EIC

EIC
1N6263

SCHOOTTKYBARRIERDIODES

SCHOOTTKYBARRIERDIODES FEATURES HermeticallySealed MetalurgicallyBonded DoublePlugConstruction

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N6263

SMALLSIGNALSCHOTTKYDIODES

FEATURES •Forgeneralpurposeapplications •Metal-on-siliconjunctionSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfastswitching makeitidealforprotectionofMOSdevices,steering,biasingand couplingdiodesforfast

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集团济南晶恒电子有限责任公司

JINANJINGHENG
1N6263

SMALLSIGNALSCHOTTKYDIODE

VOLTAGERANGE:60VPOWERDISSIPATION:400mW FEATURES ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitid

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
1N6263

SmallSignalSchottkyDiodes

VOLTAGERANGE:60VPOWERDISSIPATION:400mW Features ◇Forgeneralpurposeapplications ◇Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasi

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
1N6263

SCHOTTKYDIODES

SCHOTTKYDIODES •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltagedrop andfastswitchingmakeitidealforprotectionofMOSdevices.

DIGITRON

Digitron Semiconductors

DIGITRON
1N6263

SMALLSIGNALSCHOTTKYDIODES

FEATURES •Forgeneralpurposeapplications •Metal-on-siliconjunctionSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfastswitching makeitidealforprotectionofMOSdevices,steering,biasingand couplingdiodesforfast

JINGHENG

Jinan Jing Heng Electronics Co., Ltd.

JINGHENG
1N6263

SMALLSIGNALSCHOTTKYDIODE

Features ●Forgeneralpurposeapplications ●Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiodesfor fastswitc

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
1N6263

15mAAxialLeadedSchottkyBarrierDiodes

Features ●Forgeneralpurposeapplications ●Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiodesfor fastswitc

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
1N6263

SMALLSIGNALSCHOTTKYDIODE

VOLTAGERANGE:60VPOWERDISSIPATION:400mW FEATURES ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitid

DSK

Diode Semiconductor Korea

DSK
1N6263

SMALLSIGNALSCHOTTKYDIODES

FEATURES Forgeneralpurposeapplications fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcou

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

SAMYANG
1N6263

SMALLSIGNALSCHOTTKYDIODE

文件：334.344 Kbytes Page：2 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者：深圳市福田区吉富昌电子商行

SUNMATE
1N6263

SMALLSIGNALSCHOTTKYDIODES

文件：56.79 Kbytes Page：2 Pages

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集团济南晶恒电子有限责任公司

JINANJINGHENG
1N6263

Forgeneralpurposeapplicationsnull

文件：75.27 Kbytes Page：2 Pages

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
1N6263

封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 60V 15MA DO35 分立半导体产品 二极管 - 整流器 - 单

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
1N6263W

SMALLSIGNALDIODES

Features ●LowForwardVoltageDrop ●GuardRingConstuctionforTransientProtection ●FastSwitchingTime ●LowReverseCapacitance ●SurfaceMountPackageldeallySuitedforAutomaticInsertion

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
1N6263W

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features: •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedforAutomaticInsertion

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技（东莞）有限公司

SEMTECH_ELEC
1N6263W

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedforAutomaticInsertion

DIODESDiodes Incorporated

达尔科技

DIODES
1N6263W

SurfaceMountSchottkyBarrierDiode

VoltageRange60Volts400mWattsPowerDissipation Features ◇Lowforwardvoltagedrop ◇GuardRingConstructionforTransientProtection ◇Fastswitchingtime ◇LowReverseCapacitance ◇Surfacemountpackageideallysuitedforautomaticinsertion

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
1N6263W

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •Lead,HalogenandAntimonyFree,RoHSCompliantGreenDevice(Notes3and4)

DIODESDiodes Incorporated

达尔科技

DIODES
1N6263W

LowForwardVoltageDropnull

Features ●LowForwardVoltageDrop ●GuardRingConstructionforTransientProtection ●FastSwitchingTime ●LowReverseCapacitance ●SurfaceMountPackageIdeallySuitedforAutomaticInsertion

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
1N6263W

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features ●LowForwardVoltageDrop ●GuardRingConstructionforTransientProtection ●FastSwitchingTime ●LowReverseCapacitance ●SurfaceMountPackageIdeallySuitedforAutomaticInsertion

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
1N6263W_

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedforAutomaticInsertion

DIODESDiodes Incorporated

达尔科技

DIODES
1N6263W-7-F

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedforAutomaticInsertion

DIODESDiodes Incorporated

达尔科技

DIODES
1N6263WS

SILICONSCHOTTKYBARRIERDIODE

SILICONSCHOTTKYBARRIERDIODEforgeneralpurposeapplications

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技（东莞）有限公司

SEMTECH_ELEC
1N6263WT

SILICONSCHOTTKYBARRIERDIODE

SILICONSCHOTTKYBARRIERDIODEforgeneralpurposeapplications

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技（东莞）有限公司

SEMTECH_ELEC
1N6263W

SURFACEMOUNTSCHOTTKYBARRIERDIODE

文件：384.115 Kbytes Page：3 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者：深圳市福田区吉富昌电子商行

SUNMATE
1N6263W

60VDetectionswitchtube

文件：376.094 Kbytes Page：3 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者：深圳市福田区吉富昌电子商行

SUNMATE
1N6263 TR

封装/外壳：DO-204AH，DO-35，轴向 包装：散装 描述：TRANSISTOR 分立半导体产品 二极管 - 整流器 - 单

CentralCentral Semiconductor Corp

美国中央半导体

Central
1N6263_15

Diode

文件：75.27 Kbytes Page：2 Pages

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
1N6263W

SURFACEMOUNTSCHOTTKYBARRIERDIODE

文件：116.15 Kbytes Page：3 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
1N6263W_08

SURFACEMOUNTSCHOTTKYBARRIERDIODE

文件：116.15 Kbytes Page：3 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
1N6263W_15

SOD-123

文件：96.54 Kbytes Page：2 Pages

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
1N6263W_15

SURFACEMOUNTSCHOTTKYBARRIERDIODE

文件：116.15 Kbytes Page：3 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
1N6263W-7-F

SURFACEMOUNTSCHOTTKYBARRIERDIODE

文件：116.15 Kbytes Page：3 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

1N6263产品属性

  • 类型

    描述

  • 型号

    1N6263

  • 功能描述

    肖特基二极管与整流器 15mA 60 Volt

  • RoHS

    否

  • 制造商

    Skyworks Solutions, Inc.

  • 产品

    Schottky Diodes

  • 峰值反向电压

    2 V

  • 正向连续电流

    50 mA

  • 配置

    Crossover Quad

  • 正向电压下降

    370 mV

  • 最大功率耗散

    75 mW

  • 工作温度范围

    - 65 C to + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-143

  • 封装

    Reel

1N6263供应商更多...

更新时间：2024-4-19 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
1N6263W-7
Diodes(美台)
23+
NA/
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
上海意淼电子科技有限公司
1N6263W-7-F
DIODES
23+
NA
20000
全新原装假一赔十
询价
深圳市得捷芯城科技有限公司
1N6263W-7-F
DIODES/美台
23+
NA/
6250
原装现货,当天可交货,原型号开票
询价
深圳市金芯世纪电子有限公司
1N6263W
TSC/台湾半导体
22+
SOD-123
100000
代理渠道/只做原装/可含税
询价
中天科工半导体（深圳）有限公司
1N6263W-7-F
DIODES/美台
23+
SOD-123
45000
热卖优势现货
询价
深圳市品优时代科技有限公司
1N6263W-7-F
Diodes/美台
2021/2022+
NA
12000
原厂原装现货订货价格优势终端BOM表可配单提供样品
询价
深圳市威雅利发展有限公司
1N6263W-7-F
DIODES
2135
SOD123
83470
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市凌旭科技有限公司
1N6263W-7-F
DIODES/美台
21+
SOD-123
6000
只做原装,一定有货,不止网上数量,量多可订货!
询价
深圳市盈腾兴电子科技有限公司
1N6263
ST/意法半导体
21+
DO-35
12820
公司只做原装,诚信经营
询价
深圳市大联智电子有限公司
1N6263W-7肖特基二极管
DIODES/美台
22+
SOD123
354000
询价

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