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型号 功能描述 生产厂家&企业 LOGO 操作
1N60P

SMALLSIGNALSCHOTTKYDIODES

Features ◇Metalsilliconjunctionmajoritycarrierconduction ◇Highcurrentcapability,Lowforwardvoltagedrop ◇ExtremelylowreversecurrentIR ◇Ultraspeedswitchingcharacteristics ◇Smalltemperaturecoefficientofforwardcharacteristics ◇Satisfactorywavedetectionefficiency ◇

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
1N60P

SchottkyBarrierDiodesSMALLSIGNALSCHOTTKYDIODES30m/50mAMPERES40/45VOLTS

Features: *HighReliability *LowReverseCurrentandLowForwardVoltage Applications: *LowCurrentRectificationandHighSpeedSwitching

WEITRON

Weitron Technology

WEITRON
1N60P

GERMANIUMDIODES

Features ·Metalsiliconjunction,majoritycarrierconduction ·Highcurrentcapability,Lowforwardvoltagedrop ·ExtremelylowreversecurrentlR ·Ultraspeedswitchingcharacteristics ·Smalltemperaturecoefficientofforwardcharacteristics ·SatisfactoryWavedetectione

DAESAN

Daesan Electronics Corp.

DAESAN
1N60P

SMALLSIGNALSCHOTTKYDIODE

FEATURES ●Metal-on-siliconjunction,majoritycarrierconduction ●Highcurrentcapability,Lowforwardvoltagedrop ●ExtremelylowreversecurrentIr ●Ultraspeedswitchingcharacteristics ●Smalltemperaturecoefficientofforwardcharacteristics ●SatisfactoryWavedetectio

DIOTECH

Diotech Company.

DIOTECH
1N60P

POINTCONTACTGERMANIUMDIODES

POINTCONTACTGERMANIUMDIODES 1N60isapointcontactdiodeemployingN-fromGermaniumandgivesanefficientandexcellentlinearitywhenusedinTVimagedetection,FMdetection,radio,AMdetection,etc.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技（东莞）有限公司

SEMTECH_ELEC
1N60P

SMALLSIGNALSCHOTTKYDIODES

FEATURES •Metal-on-siliconjunction,majoritycarrierconduction •Highcurrentcapability,Lowforwardvoltagedrop •ExtremelylowreversecurrentIR •Ultraspeedswitchingcharacteristics •Smalltemperaturecoefficientofforwardcharacteristics •Satisfactorywavedetectionefficiency

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集团济南晶恒电子有限责任公司

JINANJINGHENG
1N60P

SchottkyBarrierRectifier

Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃

TGS

Tiger Electronic Co.,Ltd

TGS
1N60P

SchottkyBarrierRectifier

Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation) •MoistureSensitivityLevel1 MaximumRatings •Storage&

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
1N60P

SMALLSIGNALSCHOTTKYDIODES

ReverseVoltage-40to45Volts ForwardCurrent-0.03/0.05Amperes FEATURES Fastswitchingforhighefficiency Lowreverseleakage Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed 250C/10seconds,0.375”(9.5mm)leadlength,5lbs.(2.3kg)tension

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

SY
1N60P

POINTCONTACTGERMANIUMDIODE

PointContactGermaniumDiodes 1N60isapointcontactdiodeemployingN-fromGermaniumandgivesanefficientandexcellentlinearitywhenusedinTVimagedetection,FMdetection,radio,AMdetection,etc.

SEMTECHSemtech Corporation

升特

SEMTECH
1N60P

SchottkyBarrierDiode

Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

FORMOSA
1N60P

TECHNICALSPECIFICATIONSOFSMALLSIGNALSCHOTTKYDIODES

FEATURES *Metalsiliconjunction,majoritycarrierconduction. *Highcurrentcapability,lowforwardvoltagedrop. *ExtremelylowreversecurrentIR *Ultraspeedswitchingcharacteristics *Smalltemperaturecoefficientofforwardcharacteristics *SatisfactoryWavedetectionefficiency

DCCOM

Dc Components

DCCOM
1N60P

SMALLSIGNALSCHOTTKYDIODES

FEATURES •Metal-on-siliconjunction,majoritycarrierconduction •Highcurrentcapability,Lowforwardvoltagedrop •ExtremelylowreversecurrentIR •Ultraspeedswitchingcharacteristics •Smalltemperaturecoefficientofforwardcharacteristics •Satisfactorywavedetectionefficiency

GXELECTRONICSShandong Xinghe Minghui Electronics Co., Ltd

星合电子山东星合明辉电子有限公司

GXELECTRONICS
1N60P

1.2A,600VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC1N60PisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristic.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsofpowe

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
1N60P

SmallSignalSchottkyDiodes

Features ◇Metalsilliconjunctionmajoritycarrierconduction ◇Highcurrentcapability,Lowforwardvoltagedrop ◇ExtremelylowreversecurrentIR ◇Ultraspeedswitchingcharacteristics ◇Smalltemperaturecoefficientofforwardcharacteristics ◇Satisfactorywavedetectionefficiency ◇

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
1N60P

SmallSignalSchottkyDiodes

■Features ●VR40V ●IFAV30mA ■Applications ●Useinsuperhighspeedswitchingcircuits,smallcurrentrectifier

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE
1N60P

SchottkyBarrierDiode

Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
1N60P

SMALLSIGNALSCHOTTKYDIODE

FEATURES ◇Metalsilliconjunctionmajoritycarrierconduction ◇Highcurrentcapability,Lowforwardvoltagedrop ◇ExtremelylowreversecurrentIR ◇Ultraspeedswitchingcharacteristics ◇Smalltemperaturecoefficientofforwardcharacteristics ◇Satisfactorywavedetectionefficiency ◇

DSK

Diode Semiconductor Korea

DSK
1N60P

HermeticallySealedGlassCasePointContactGermaniumDiode

PRODUCTFEATURE 1N60isapointcontactdiodeemployingN-fromGermaniumandgivesanefficientandexcellentlinearitywhenusedinTVimagedetection,FMdetection,radio,AMdetection,etc.

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

THINKISEMI
1N60P

SMALLSIGNALSCHOTTKYDIODES

文件：365.313 Kbytes Page：2 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者：深圳冠荣电子有限公司

SUNMATE
1N60P

40VDetectionswitchtube

文件：365.394 Kbytes Page：2 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者：深圳冠荣电子有限公司

SUNMATE
1N60P

SMALLSIGNALSCHOTTKYDIODES

文件：72.98 Kbytes Page：3 Pages

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒济南晶恒电子有限责任公司

JINGHENG
1N60P

SILICONSCHOTTKYBARRIERDIODE

文件：75.86 Kbytes Page：1 Pages

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
1N60

GOLDBONDEDGERMANIUMDIODE

GermaniumGlassDiode Features •GermaniumGlassDiode •RoHSCompliance

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
1N60

SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors

FEATURES •Hermeticallysealed •Breakdownvoltagerange6.8-200volts •Glasspassivatedjunction •Excellentclampingcapability •Lowzenerimpedance •100surgetested •-55°Cto+150°C •Bi-directional MAXIMUMRATING •PeakPulsePower(Ppk):15000Watts(10x1000µs)@25°C(seedi

Littelfuselittelfuse

力特力特公司

Littelfuse
1N60

SchottkyBarrierDiode

Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

FORMOSA
1N60

JEDECDO-7PACKAGE

JEDECDO-7PACKAGE

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1
1N60

1.2Amps,600VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
1N60PG-T92-B

1.2A,600VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC1N60PisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristic.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsofpowe

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
1N60PG-T92-K

1.2A,600VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC1N60PisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristic.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsofpowe

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
1N60PG-T92-R

1.2A,600VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC1N60PisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristic.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsofpowe

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
1N60PL-T92-B

1.2A,600VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC1N60PisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristic.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsofpowe

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
1N60PL-T92-K

1.2A,600VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC1N60PisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristic.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsofpowe

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
1N60PL-T92-R

1.2A,600VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC1N60PisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristic.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsofpowe

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
1N60PW

SiliconSchottkyBarrierDiode

Features ●Metalsiliconjunction,majoritycarrierconduction ●Idealforusedindetectionorforswitchingontheradio,TV,etc.

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
1N60PW

SchottkyBarrierDiode

FEATURES •Highreliability •Lowforwardvoltageandreversecurrent APPLICATIONS •Forelectroniccalculator,etc. •Lowcurrentrectificationandhighspeedswitching

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技（东莞）有限公司

SEMTECH_ELEC
1N60PWS

SCHOTTKYBARRIERDIODE

Features •Highreliability •Lowforwardvoltageandreversecurrent Applications •Forelectroniccalculator,etc. •Lowcurrentrectificationandhighspeedswitching

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技（东莞）有限公司

SEMTECH_ELEC
1N60PWS

SCHOTTKYBARRIERDIODE

Features ●Highreliability ●Lowforwardvoltageandreversecurrent MechanicalData ●Case:SOD-323,MoldedPlastic ●Terminals:PlatedLeadsSolderableperMIL-STD-202,Method208 ●Polarity:CathodeBand ●Weight:0.004grams(approx.) ●Marking:A3

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
1N60PW

SCHOTTKYBARRIERDIODE

文件：368.319 Kbytes Page：2 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者：深圳冠荣电子有限公司

SUNMATE
1N60PW

45VDetectionswitchtube

文件：365.394 Kbytes Page：2 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者：深圳冠荣电子有限公司

SUNMATE
1N60PWS

SCHOTTKYBARRIERDIODE

文件：377.397 Kbytes Page：2 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者：深圳冠荣电子有限公司

SUNMATE

1N60P产品属性

  • 类型

    描述

  • 型号

    1N60P

  • 制造商

    FORMOSA

  • 制造商全称

    Formosa MS

  • 功能描述

    Schottky Barrier Diode

1N60P供应商更多...

更新时间：2025-6-9 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
1N60P
ST/先科
24+
NA/
23555
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市威雅利发展有限公司
1N60P
ST
20+
SMD-1206
20
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市豪迈兴电子有限公司
1N60P
JF
24+
DO-35
5323
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
深圳市仟禧电子有限公司
1N60P
ST/意法
22+
DO-35
20000
深圳原装现货正品有单价格可谈
询价
深圳市航润创能电子集团有限公司
1N60P
ST
21+
SMD-1206
20
原装现货假一赔十
询价
深圳市永贝尔科技有限公司
1N60P
FORMOSA
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
深圳市振宏微科技有限公司
1N60P
LL34
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
深圳市毅创腾电子科技有限公司
1N60P-S4038
ST原装
DIP
10000
原装长期供货!
询价
深圳市华斯顿科技有限公司
1N60P-S4038
ST原装
25+23+
DIP
42376
绝对原装正品全新进口深圳现货
询价
深圳市赛特兴科技有限公司
1N60PD
ST
23+
原厂原封
16900
正规渠道,只有原装!
询价

1N60P芯片相关品牌

  • ADVANTECH
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  • bookham
  • ITT
  • LEIDITECH
  • Maxim
  • PYRAMID
  • SOCAY
  • TEMEX
  • TURCK
  • ZETTLER

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