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型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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1N60P | SMALLSIGNALSCHOTTKYDIODES Features ◇Metalsilliconjunctionmajoritycarrierconduction ◇Highcurrentcapability,Lowforwardvoltagedrop ◇ExtremelylowreversecurrentIR ◇Ultraspeedswitchingcharacteristics ◇Smalltemperaturecoefficientofforwardcharacteristics ◇Satisfactorywavedetectionefficiency ◇ | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | ||
1N60P | SchottkyBarrierDiodesSMALLSIGNALSCHOTTKYDIODES30m/50mAMPERES40/45VOLTS Features: *HighReliability *LowReverseCurrentandLowForwardVoltage Applications: *LowCurrentRectificationandHighSpeedSwitching | WEITRONWEITRON 威堂電子科技 | ||
1N60P | GERMANIUMDIODES Features ·Metalsiliconjunction,majoritycarrierconduction ·Highcurrentcapability,Lowforwardvoltagedrop ·ExtremelylowreversecurrentlR ·Ultraspeedswitchingcharacteristics ·Smalltemperaturecoefficientofforwardcharacteristics ·SatisfactoryWavedetectione | DAESAN Daesan Electronics Corp. | ||
1N60P | SMALLSIGNALSCHOTTKYDIODE FEATURES ●Metal-on-siliconjunction,majoritycarrierconduction ●Highcurrentcapability,Lowforwardvoltagedrop ●ExtremelylowreversecurrentIr ●Ultraspeedswitchingcharacteristics ●Smalltemperaturecoefficientofforwardcharacteristics ●SatisfactoryWavedetectio | DIOTECH Diotech Company. | ||
1N60P | POINTCONTACTGERMANIUMDIODES POINTCONTACTGERMANIUMDIODES 1N60isapointcontactdiodeemployingN-fromGermaniumandgivesanefficientandexcellentlinearitywhenusedinTVimagedetection,FMdetection,radio,AMdetection,etc. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | ||
1N60P | SMALLSIGNALSCHOTTKYDIODES FEATURES •Metal-on-siliconjunction,majoritycarrierconduction •Highcurrentcapability,Lowforwardvoltagedrop •ExtremelylowreversecurrentIR •Ultraspeedswitchingcharacteristics •Smalltemperaturecoefficientofforwardcharacteristics •Satisfactorywavedetectionefficiency | JINANJINGHENGJinan Jingheng (Group) Co.,Ltd 晶恒集团济南晶恒电子有限责任公司 | ||
1N60P | SchottkyBarrierRectifier Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃ | TGS Tiger Electronic Co.,Ltd | ||
1N60P | SchottkyBarrierRectifier Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation) •MoistureSensitivityLevel1 MaximumRatings •Storage& | MCCMicro Commercial Components 美微科美微科半导体公司 | ||
1N60P | SMALLSIGNALSCHOTTKYDIODES ReverseVoltage-40to45Volts ForwardCurrent-0.03/0.05Amperes FEATURES Fastswitchingforhighefficiency Lowreverseleakage Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed 250C/10seconds,0.375”(9.5mm)leadlength,5lbs.(2.3kg)tension | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | ||
1N60P | POINTCONTACTGERMANIUMDIODE PointContactGermaniumDiodes 1N60isapointcontactdiodeemployingN-fromGermaniumandgivesanefficientandexcellentlinearitywhenusedinTVimagedetection,FMdetection,radio,AMdetection,etc. | SEMTECH Semtech Corporation | ||
1N60P | SchottkyBarrierDiode Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 | ||
1N60P | TECHNICALSPECIFICATIONSOFSMALLSIGNALSCHOTTKYDIODES FEATURES *Metalsiliconjunction,majoritycarrierconduction. *Highcurrentcapability,lowforwardvoltagedrop. *ExtremelylowreversecurrentIR *Ultraspeedswitchingcharacteristics *Smalltemperaturecoefficientofforwardcharacteristics *SatisfactoryWavedetectionefficiency | DCCOMDc Components 直流元件直流元件有限公司 | ||
1N60P | SMALLSIGNALSCHOTTKYDIODES FEATURES •Metal-on-siliconjunction,majoritycarrierconduction •Highcurrentcapability,Lowforwardvoltagedrop •ExtremelylowreversecurrentIR •Ultraspeedswitchingcharacteristics •Smalltemperaturecoefficientofforwardcharacteristics •Satisfactorywavedetectionefficiency | GXELECTRONICSShandong Xinghe Minghui Electronics Co., Ltd 星合明辉电子山东星合明辉电子有限公司 | ||
1N60P | 1.2A,600VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC1N60PisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristic.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsofpowe | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | ||
1N60P | SmallSignalSchottkyDiodes Features ◇Metalsilliconjunctionmajoritycarrierconduction ◇Highcurrentcapability,Lowforwardvoltagedrop ◇ExtremelylowreversecurrentIR ◇Ultraspeedswitchingcharacteristics ◇Smalltemperaturecoefficientofforwardcharacteristics ◇Satisfactorywavedetectionefficiency ◇ | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | ||
1N60P | SmallSignalSchottkyDiodes ■Features ●VR40V ●IFAV30mA ■Applications ●Useinsuperhighspeedswitchingcircuits,smallcurrentrectifier | YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司 | ||
1N60P | SchottkyBarrierDiode Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | ||
1N60P | SMALLSIGNALSCHOTTKYDIODE FEATURES ◇Metalsilliconjunctionmajoritycarrierconduction ◇Highcurrentcapability,Lowforwardvoltagedrop ◇ExtremelylowreversecurrentIR ◇Ultraspeedswitchingcharacteristics ◇Smalltemperaturecoefficientofforwardcharacteristics ◇Satisfactorywavedetectionefficiency ◇ | DSK Diode Semiconductor Korea | ||
1N60P | HermeticallySealedGlassCasePointContactGermaniumDiode PRODUCTFEATURE 1N60isapointcontactdiodeemployingN-fromGermaniumandgivesanefficientandexcellentlinearitywhenusedinTVimagedetection,FMdetection,radio,AMdetection,etc. | THINKISEMIThinki Semiconductor Co., Ltd. 思凯半导体思凯半导体有限公司 | ||
1N60P | SMALLSIGNALSCHOTTKYDIODES 文件:365.313 Kbytes Page:2 Pages | |||
1N60P | 40VDetectionswitchtube 文件:365.394 Kbytes Page:2 Pages | |||
1N60P | SMALLSIGNALSCHOTTKYDIODES 文件:72.98 Kbytes Page:3 Pages | JINGHENG Jinan Jing Heng Electronics Co., Ltd. | ||
1N60P | SILICONSCHOTTKYBARRIERDIODE 文件:75.86 Kbytes Page:1 Pages | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
GOLDBONDEDGERMANIUMDIODE GermaniumGlassDiode Features •GermaniumGlassDiode •RoHSCompliance | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors FEATURES •Hermeticallysealed •Breakdownvoltagerange6.8-200volts •Glasspassivatedjunction •Excellentclampingcapability •Lowzenerimpedance •100surgetested •-55°Cto+150°C •Bi-directional MAXIMUMRATING •PeakPulsePower(Ppk):15000Watts(10x1000µs)@25°C(seedi | LittelfuseLittelfuse Inc. 力特力特公司 | |||
SchottkyBarrierDiode Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 | |||
JEDECDO-7PACKAGE JEDECDO-7PACKAGE | ETC1List of Unclassifed Manufacturers 未分类制造商 | |||
1.2Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
1.2A,600VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC1N60PisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristic.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsofpowe | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
1.2A,600VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC1N60PisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristic.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsofpowe | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
1.2A,600VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC1N60PisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristic.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsofpowe | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
1.2A,600VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC1N60PisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristic.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsofpowe | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
1.2A,600VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC1N60PisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristic.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsofpowe | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
1.2A,600VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC1N60PisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristic.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsofpowe | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
SiliconSchottkyBarrierDiode Features ●Metalsiliconjunction,majoritycarrierconduction ●Idealforusedindetectionorforswitchingontheradio,TV,etc. | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
SchottkyBarrierDiode FEATURES •Highreliability •Lowforwardvoltageandreversecurrent APPLICATIONS •Forelectroniccalculator,etc. •Lowcurrentrectificationandhighspeedswitching | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
SCHOTTKYBARRIERDIODE Features •Highreliability •Lowforwardvoltageandreversecurrent Applications •Forelectroniccalculator,etc. •Lowcurrentrectificationandhighspeedswitching | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
SCHOTTKYBARRIERDIODE Features ●Highreliability ●Lowforwardvoltageandreversecurrent MechanicalData ●Case:SOD-323,MoldedPlastic ●Terminals:PlatedLeadsSolderableperMIL-STD-202,Method208 ●Polarity:CathodeBand ●Weight:0.004grams(approx.) ●Marking:A3 | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
SCHOTTKYBARRIERDIODE 文件:368.319 Kbytes Page:2 Pages | ||||
45VDetectionswitchtube 文件:365.394 Kbytes Page:2 Pages | ||||
SCHOTTKYBARRIERDIODE 文件:377.397 Kbytes Page:2 Pages |
1N60P产品属性
- 类型
描述
- 型号
1N60P
- 制造商
FORMOSA
- 制造商全称
Formosa MS
- 功能描述
Schottky Barrier Diode
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
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ST |
20+ |
SMD-1206 |
20 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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JF |
2339+ |
DO-35 |
5323 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
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JF |
2021+ |
DO-35 |
6540 |
原装现货/欢迎来电咨询 |
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ST |
21+ |
SMD-1206 |
20 |
原装现货假一赔十 |
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UTC |
23/22+ |
TO92 |
6000 |
20年老代理.原厂技术支持 |
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LL34 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
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ST/先科 |
23+ |
NA/ |
23555 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
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ST |
L34 |
608900 |
原包原标签100%进口原装常备现货! |
||||
ST/先科 |
2022 |
DO-35 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
ST |
22+ |
原厂原封 |
16900 |
正规渠道,只有原装! |
1N60P规格书下载地址
1N60P参数引脚图相关
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- 1N6106A
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- 1N6105
- 1N6104A
- 1N6104
- 1N6103A
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- 1N6102A
- 1N6102
- 1N6101
- 1N6100
- 1N610
- 1N60ZG-TN3-T
- 1N60ZG-TN3-R
- 1N60ZG-T92-R
- 1N60ZG-T92-K
- 1N60ZG-T92-B
- 1N60Z
- 1N60-TN3-T
- 1N60-TN3-R
- 1N60-TM3-T
- 1N60-TF3-T
- 1N60SW
- 1N60SSB
- 1N60S4B
- 1N60S
- 1N60PWS
- 1N60PW
- 1N60PL-T92-R
- 1N60PL-T92-K
- 1N60PL-T92-B
- 1N60PG-T92-R
- 1N60PG-T92-K
- 1N60PG-T92-B
- 1N60L-X-AA3-R
- 1N60L-TN3-T
- 1N60L-TN3-R
- 1N60L-TM3-T
- 1N60L-TF3-T
- 1N60L-TA3-T
- 1N60L-T92-K
- 1N60L-T92-B
- 1N60L-T60-K
- 1N60L-AA3-R
- 1N60-KW
- 1N60H
- 1N60G-X-TN3-T
- 1N60G-X-TN3-R
- 1N60G-X-TM3-T
- 1N60G-X-TF3-T
- 1N60G-X-TA3-T
- 1N60G-X-T92-K
- 1N60G-X-T92-B
- 1N60G-X-T60-K
- 1N60G-X-AA3-R
- 1N60G-TN3-T
- 1N60C
- 1N60A
- 1N609A
- 1N6099
- 1N6098R
- 1N6098
- 1N6097R
- 1N6097
- 1N6096R
- 1N6096
- 1N6095R
- 1N6095
- 1N6094
- 1N6093
- 1N6092
- 1N6091B
- 1N6091
- 1N6090
1N60P数据表相关新闻
1N60G-SOT223R-B-TG_UTC代理商
1N60G-SOT223R-B-TG_UTC代理商
2023-3-71N6525 全套的高压二极管
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2021-5-141N6117代理渠道 ,进口原装
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2020-10-191N5822
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2020-7-261N5924BRLG,1N5927BG,1N6295AG,1N6296A,1N6297A,1N6298ARL4
1N5924BRLG,1N5927BG,1N6295AG,1N6296A,1N6297A,1N6298ARL4
2020-3-10
DdatasheetPDF页码索引
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