SMALL SIGNAL SCHOTTKY DIODES

Features ◇ Metal sillicon junction majority carrier conduction ◇ High current capability,Low forward voltage drop ◇ Extremely low reverse current IR ◇ Ultra speed switching characteristics ◇ Small temperature coefficient of forward characteristics ◇ Satisfactory wave detection efficiency ◇

Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 30m/50m AMPERES 40/45VOLTS

Features: * High Reliability * Low Reverse Current and Low Forward Voltage Applications: * Low Current Rectification and High Speed Switching

GERMANIUM DIODES

Features · Metal silicon junction, majority carrier conduction · High current capability, Low forward voltage drop · Extremely low reverse current lR · Ultra speed switching characteristics · Small temperature coefficient of forward characteristics · Satisfactory Wave detection e

SMALL SIGNAL SCHOTTKY DIODE

FEATURES ● Metal-on-silicon junction, majority carrier conduction ● High current capability, Low forward voltage drop ● Extremely low reverse current Ir ● Ultra speed switching characteristics ● Small temperature coefficient of forward characteristics ● Satisfactory Wave detectio

POINT CONTACT GERMANIUM DIODES

POINT CONTACT GERMANIUM DIODES 1N60 is a point contact diode employing N-from Germanium and gives an efficient and excellent linearity when used in TV image detection, FM detection, radio, AM detection, etc.

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • Metal-on-silicon junction, majority carrier conduction • High current capability, Low forward voltage drop • Extremely low reverse current IR • Ultra speed switching characteristics • Small temperature coefficient of forward characteristics • Satisfactory wave detection efficiency

Schottky Barrier Rectifier

Features • High Reliability • Low Reverse Current and Low Forward Voltage · Marking : Cathode band and type number • Moisture Sensitivity: Level 1 per J-STD-020C Maximum Ratings • Storage &Operating JunctionTemperature: -65℃ to +125℃

Schottky Barrier Rectifier

Features • High Reliability • Low Reverse Current and Low Forward Voltage · Marking : Cathode band and type number • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information) • Moisture Sensitivity Level 1 Maximum Ratings • Storage &

SMALL SIGNAL SCHOTTKY DIODES

Reverse Voltage - 40 to 45 Volts Forward Current - 0.03/0.05 Amperes FEATURES Fast switching for high efficiency Low reverse leakage High forward surge current capability High temperature soldering guaranteed 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension

POINT CONTACT GERMANIUM DIODE

Point Contact Germanium Diodes 1N60 is a point contact diode employing N-from Germanium and gives an efficient and excellent linearity when used in TV image detection, FM detection, radio, AM detection, etc.

Schottky Barrier Diode

Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar

TECHNICAL SPECIFICATIONS OF SMALL SIGNAL SCHOTTKY DIODES

FEATURES * Metal silicon junction, majority carrier conduction. * High current capability, low forward voltage drop. * Extremely low reverse current IR * Ultra speed switching characteristics * Small temperature coefficient of forward characteristics * Satisfactory Wave detection efficiency

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • Metal-on-silicon junction, majority carrier conduction • High current capability, Low forward voltage drop • Extremely low reverse current IR • Ultra speed switching characteristics • Small temperature coefficient of forward characteristics • Satisfactory wave detection efficiency

1.2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of powe

Small Signal Schottky Diodes

Features ◇ Metal sillicon junction majority carrier conduction ◇ High current capability,Low forward voltage drop ◇ Extremely low reverse current IR ◇ Ultra speed switching characteristics ◇ Small temperature coefficient of forward characteristics ◇ Satisfactory wave detection efficiency ◇

Small Signal Schottky Diodes

■ Features ● VR 40V ● IFAV 30mA ■ Applications ● Use in super high speed switching circuits, small current rectifier

Schottky Barrier Diode

Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching

SMALL SIGNAL SCHOTTKY DIODE

FEATURES ◇ Metal sillicon junction majority carrier conduction ◇ High current capability,Low forward voltage drop ◇ Extremely low reverse current IR ◇ Ultra speed switching characteristics ◇ Small temperature coefficient of forward characteristics ◇ Satis factory wave detection efficiency ◇

Hermetically Sealed Glass Case Point Contact Germanium Diode

PRODUCT FEATURE 1N60 is a point contact diode employing N-from Germanium and gives an efficient and excellent linearity when used in TV image detection, FM detection, radio, AM detection, etc.

SMALL SIGNAL SCHOTTKY DIODES

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40V Detection switch tube

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SMALL SIGNAL SCHOTTKY DIODES

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SILICON SCHOTTKY BARRIER DIODE

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1.2A, 600V N-CHANNEL POWER MOSFET

GOLD BONDED GERMANIUM DIODE

Germanium Glass Diode Features • Germanium Glass Diode • RoHS Compliance

Silicon Avalanche Diodes - 1500 Watt Metal Axial Leaded Transient Voltage Suppressors

FEATURES • Hermetically sealed • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Excellent clamping capability • Low zener impedance • 100 surge tested • -55°C to +150°C • Bi-directional MAXIMUM RATING • Peak Pulse Power (Ppk): 15000 Watts (10 x 1000µs)@25°C (see di

Schottky Barrier Diode

Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar

JEDEC DO-7 PACKAGE

JEDEC DO-7 PACKAGE

1.2 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in pow

1.2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of powe

1.2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of powe

1.2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of powe

1.2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of powe

1.2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of powe

1.2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of powe

Silicon Schottky Barrier Diode

Features ● Metal silicon junction, majority carrier conduction ● Ideal for used in detection or for switching on the radio, TV, etc.

Schottky Barrier Diode

FEATURES • High reliability • Low forward voltage and reverse current APPLICATIONS • For electronic calculator, etc. • Low current rectification and high speed switching

SCHOTTKY BARRIER DIODE

Features • High reliability • Low forward voltage and reverse current Applications • For electronic calculator, etc. • Low current rectification and high speed switching

SCHOTTKY BARRIER DIODE

Features ● High reliability ● Low forward voltage and reverse current Mechanical Data ● Case: SOD-323, Molded Plastic ● Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ● Polarity: Cathode Band ● Weight: 0.004 grams (approx.) ● Marking: A3

SCHOTTKY BARRIER DIODE

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45V Detection switch tube

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SCHOTTKY BARRIER DIODE

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肖特基二极管

肖特基二极管