位置：首页 > IC中文资料第10762页 > 1N60L
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GOLD BONDED GERMANIUM DIODE Germanium Glass Diode Features • Germanium Glass Diode • RoHS Compliance | ETCList of Unclassifed Manufacturers 未分类制造商 |   | ||
Silicon Avalanche Diodes - 1500 Watt Metal Axial Leaded Transient Voltage Suppressors FEATURES • Hermetically sealed • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Excellent clamping capability • Low zener impedance • 100 surge tested • -55°C to +150°C • Bi-directional MAXIMUM RATING • Peak Pulse Power (Ppk): 15000 Watts (10 x 1000µs)@25°C (see di | Littelfuse 力特 | | ||
Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar | FORMOSA 美丽微半导体 | | ||
JEDEC DO-7 PACKAGE JEDEC DO-7 PACKAGE | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | | ||
1.2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in pow | UTC 友顺 | | ||
1.2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in pow | UTC 友顺 | | ||
1.2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in pow | UTC 友顺 | | ||
1.2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in pow | UTC 友顺 | | ||
1.2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in pow | UTC 友顺 | | ||
1.2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in pow | UTC 友顺 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET 文件：282.69 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：361.67 Kbytes Page：7 Pages | UTC 友顺 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET 文件：282.69 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT 文件：267.95 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：361.67 Kbytes Page：7 Pages | UTC 友顺 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET 文件：282.69 Kbytes Page：6 Pages | UTC 友顺 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET 文件：282.69 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT 文件：267.95 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：361.67 Kbytes Page：7 Pages | UTC 友顺 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET 文件：282.69 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET 文件：395.7 Kbytes Page：8 Pages | ARTSCHIP | | ||
N-CHANNEL POWER MOSFET 文件：361.67 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：361.67 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET 文件：395.7 Kbytes Page：8 Pages | ARTSCHIP | | ||
N-CHANNEL POWER MOSFET 文件：361.67 Kbytes Page：7 Pages | UTC 友顺 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET 文件：282.69 Kbytes Page：6 Pages | UTC 友顺 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET 文件：282.69 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：361.67 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET 文件：395.7 Kbytes Page：8 Pages | ARTSCHIP | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.0835 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL ENHANCEMENT 文件：267.95 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：361.67 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：361.67 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：361.67 Kbytes Page：7 Pages | UTC 友顺 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET 文件：282.69 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：361.67 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT 文件：267.95 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.08647 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.08635 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET 文件：282.69 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET 文件：395.7 Kbytes Page：8 Pages | ARTSCHIP | | ||
N-CHANNEL POWER MOSFET 文件：361.67 Kbytes Page：7 Pages | UTC 友顺 | | ||
1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：275.21 Kbytes Page：6 Pages | UTC 友顺 | | ||
1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：275.21 Kbytes Page：6 Pages | UTC 友顺 | | ||
1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：275.21 Kbytes Page：6 Pages | UTC 友顺 | | ||
1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：275.21 Kbytes Page：6 Pages | UTC 友顺 | | ||
1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：275.21 Kbytes Page：6 Pages | UTC 友顺 | | ||
1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：275.21 Kbytes Page：6 Pages | UTC 友顺 | | ||
1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：275.21 Kbytes Page：6 Pages | UTC 友顺 | | ||
1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：275.21 Kbytes Page：6 Pages | UTC 友顺 | | ||
1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：275.21 Kbytes Page：6 Pages | UTC 友顺 | |
1N60L产品属性
- 类型
描述
- 型号
1N60L
- 制造商
UTC-IC
- 制造商全称
UTC-IC
- 功能描述
1.2A, 600V N-CHANNEL POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UMW/FDS |
24+ |
NA/ |
980000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
22+ |
1206 |
5000 |
||||
UTC/友顺 |
25+ |
SOT-89 |
20300 |
UTC/友顺原装特价1N60G-AB3-R即刻询购立享优惠#长期有货 |
|||
Semitehelec |
2021+ |
LL34 |
2500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
UMW(广东友台半导体) |
24+ |
SOT-223 |
5000 |
诚信服务,绝对原装原盘。 |
|||
FH |
24+/25+ |
TO-92 |
80 |
原装正品现货库存价优 |
|||
FSC原装正品 |
23+ |
TO92 |
12328 |
||||
UTC(友顺) |
24+/25+ |
TO-252-2(DPAK) |
2500 |
UTC原厂一级代理商,价格优势! |
|||
2023+ |
3000 |
进口原装现货 |
|||||
ON |
2023+ |
TO-92 |
58000 |
进口原装,现货热卖 |
1N60L规格书下载地址
1N60L参数引脚图相关
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1N60L数据表相关新闻
1N60G-SOT223R-B-TG_UTC代理商
1N60G-SOT223R-B-TG_UTC代理商
2023-3-71N6525 全套的高压二极管
全新原装进口，质量保证，宇集芯一对一服务您放心的品质，急速发货，VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试，以确保我们的客户收到最/高质量的二极管。
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2021-5-141N6117代理渠道 ，进口原装
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2020-7-261N5924BRLG，1N5927BG，1N6295AG，1N6296A，1N6297A，1N6298ARL4
1N5924BRLG，1N5927BG，1N6295AG，1N6296A，1N6297A，1N6298ARL4
2020-3-10
DdatasheetPDF页码索引
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