型号 功能描述 生产厂家 企业 LOGO 操作
1N5817W

1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features: ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protec

SEMTECH_ELEC

先之科半导体

1N5817W

SOT-23-3L Plastic-Encapsulate Diodes

Schottky Rectifier Features ● VR 20-40V ● IFAV 1A Applications ● Rectifier

HDSEMI

海德半导体

1N5817W

SCHOTTKY BARRIER RECTIFIERS

FEATURES • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability • low forward voltage drop • High surge capability • For use in low voltage, high frequency inverters, free wheeling, and pol

YFWDIODE

佑风微

1N5817W

RECTIFIER SPECIALISTS

VOLTAGE RANGE - 20 to 40 Volts CURRENT - 1.0 Ampere FEATURES * For general purpose applications * Low turn-on voltage * Fast switching time * Ideal for surface mounted applications

DCCOM

道全

1N5817W

Metal silicon junction, majority carrier conduction

Features: • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability • Low forward voltage drop • High surge capability • For use in low voltage, high frequency inverters, free wheeling, and pol

SMC

桑德斯微电子

1N5817W

SCHOTTKY BARRIER RECTIFIERS

FEATURES • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability • low forward voltage drop • High surge capability • For use in low voltage, high frequency inverters, free wheeling, and pola

SEMIPOWER

芯派科技

1N5817W

1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features: • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protec

YIXIN

壹芯微

1N5817W

Schottky Diodes

■ Features ● Low power loss, high efficiency ● High current capability ● Low forward voltage drop ● High Surge Capability

KEXIN

科信电子

1N5817W

SCHOTTKY BARRIER DIODE

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High temperature soldering guaranteed: 260/10°C seconds,0.375(9.5mm) lead length, 5 lbs. (2.3kg) tension This i

SMCDIODE

桑德斯微电子

1N5817W

SCHOTTK Y BARRIER DIODE

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

SY

顺烨电子

1N5817W

SCHOTTKY BARRIER RECTIFIERS

文件:383.39 Kbytes Page:3 Pages

YFWDIODE

佑风微

1N5817W

SCHOTTKY DIODES SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

文件:319.46 Kbytes Page:5 Pages

AITSEMI

创瑞科技

1N5817W

1 A Surface Mount Schottky Barrier Diode

文件:470.76 Kbytes Page:2 Pages

BYTESONIC

松浩电子

1N5817W

肖特基二极管

zhxsemi

汉欣电子

1N5817W

肖特基二极管

CHINABASE

创基电子

1N5817W

肖特基二极管

JINGDAO

晶导

1N5817W

SCHOTTKY BARRIER DIODE

文件:471.87 Kbytes Page:3 Pages

YFWDIODE

佑风微

1N5817W

SCHOTTKY BARRIER RECTIFIER

文件:277.45 Kbytes Page:5 Pages

RECTRON

丽正国际

1N5817W

SCHOTTKY BARRIER RECTIFIER

文件:287.13 Kbytes Page:5 Pages

RECTRON

丽正国际

SCHOTTKY BARRIER RECTIFIERS 1 AMPERE 20, 30 and 40 VOLTS

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

Motorola

摩托罗拉

Schottky barrier diodes

DESCRIPTION The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec™(1) technology. FEATURES • Low switching losses • Fast recovery time • Guard ring protected • Hermetically s

Philips

飞利浦

LOW DROP POWER SCHOTTKY RECTIFIER

DESCRIPTION Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in DO41 these devices are intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and small battery chargers. FEATURES AND BENEF

STMICROELECTRONICS

意法半导体

1 AMPERE SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 40 Volts CURRENT - 1.0 Ampere)

VOLTAGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequency inverters ,f

PANJIT

強茂

1 AMPERE SCHOTTKY BARRIER RECTIFIERS VOLTAGE - 20 to 40 Volts CURRENT - 1.0 Ampere?

Surge

1 A SURFACE MOUNT SCHOTTKY BARRIER DIODE

1 A SURFACE MOUNT SCHOTTKY BARRIER DIODE Plastic surface mounted package; 2 leads

SEMTECH_ELEC

先之科半导体

SCHOTTKY BARRIER DIODES

SCHOTTKY BARRIER DIODES PRV : 20 - 40 Volts IO : 1.0 Ampere MECHANICAL DATA : * Case : SOD-123 * Weight : 0.01 gram (approximately) * 1N5817WB Marking Code : A0 * 1N5818WB Marking Code : ME * 1N5819WB Marking Code : SR

EIC

1 A Surface Mount Schottky Barrier Diode

1 A Surface Mount Schottky Barrier Diode Plastic surface mounted package; 2 leads

ZSELEC

淄博圣诺

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Negligible Reverse Recovery Time • Low Reverse Capacitance • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 3) • Qualified to AEC-Q101 Standards for High Reliability

YIXIN

壹芯微

SCHOTTKY BARRIER DIODE

FEATURES ♦ Low Forward Voltage Drop ♦ Guard Ring Construction for Transient Protection ♦ Negligible Reverse Recovery Time ♦ Low Capacitance ♦ Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA ♦ Case: SOD-323 ♦ Terminals: Solderable per MIL-STD-750, Method 2026 ♦ Appro

YFWDIODE

佑风微

SCHOTTKY BARRIER RECTIFIERS

FEATURES • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability • Low forward voltage drop • High surge capability • For use in low voltage, high frequency inverters, free wheeling, and pola

FS

Schottky barrier diode

Features General rectification Low VF; Low IR High reliability

TECHPUBLIC

台舟电子

Schottky Barrier Rectifiers

Features ● Metal silicon junction, majority carrier conduction ● Guarding for overvoltage protection ● Low power loss, high efficiency ● High current capability ● Low forward voltage drop ● High surge capability ● For use in low voltage, high frequency inverters, free wheeling, and pola

PJSEMI

平晶半导体

Schottky Barrier Diodes

Features ● For use in low voltage, high frequency inverters ● Free wheeling, and polarity protection applications.

KEXIN

科信电子

SCHOTTKY BARRIER RECTIFIERS

文件:383.39 Kbytes Page:3 Pages

YFWDIODE

佑风微

SCHOTTKY BARRIER DIODE

文件:471.87 Kbytes Page:3 Pages

YFWDIODE

佑风微

1 A Surface Mount Schottky B arrier Diode

文件:523.419 Kbytes Page:3 Pages

BYTESONIC

松浩电子

SCHOTTKY BARRIER RECTIFIERS

文件:472.43 Kbytes Page:3 Pages

YFWDIODE

佑风微

SCHOTTKY BARRIER RECTIFIER

文件:287.13 Kbytes Page:5 Pages

RECTRON

丽正国际

更新时间:2025-10-31 16:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
2450+
SOD123
6540
只做原装正品现货或订货假一赔十!
ST
10+
SOT-123
3000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
国产
24+
SOD-323
88000
郑重承诺只做原装进口现货
ST(意法)
24+
SOD123
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
JXND/嘉兴南电
24+
NA/
115240
原装现货,当天可交货,原型号开票
ST
23+
SOD123
20000
ST
24+
SOD123
5000
全新原装正品,现货销售
CJ/长电
25+
SOD-123
157269
明嘉莱只做原装正品现货
TOSHIBA
原厂封装
9800
原装进口公司现货假一赔百
ST
24+
SOD123
8000
新到现货,只做全新原装正品

1N5817W数据表相关新闻