| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 | 
|---|---|---|---|---|
| 1N5817W | 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features: ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protec | SEMTECH_ELEC 先之科半导体 | ||
| 1N5817W | SOT-23-3L Plastic-Encapsulate Diodes Schottky Rectifier Features ● VR 20-40V ● IFAV 1A Applications ● Rectifier | HDSEMI 海德半导体 | ||
| 1N5817W | SCHOTTKY BARRIER RECTIFIERS FEATURES • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability • low forward voltage drop • High surge capability • For use in low voltage, high frequency inverters, free wheeling, and pol | YFWDIODE 佑风微 | ||
| 1N5817W | RECTIFIER SPECIALISTS VOLTAGE RANGE - 20 to 40 Volts CURRENT - 1.0 Ampere FEATURES * For general purpose applications * Low turn-on voltage * Fast switching time * Ideal for surface mounted applications | DCCOM 道全 | ||
| 1N5817W | Metal silicon junction, majority carrier conduction Features: • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability • Low forward voltage drop • High surge capability • For use in low voltage, high frequency inverters, free wheeling, and pol | SMC 桑德斯微电子 | ||
| 1N5817W | SCHOTTKY BARRIER RECTIFIERS FEATURES • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability • low forward voltage drop • High surge capability • For use in low voltage, high frequency inverters, free wheeling, and pola | SEMIPOWER 芯派科技 | ||
| 1N5817W | 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features: • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protec | YIXIN 壹芯微 | ||
| 1N5817W | Schottky Diodes ■ Features ● Low power loss, high efficiency ● High current capability ● Low forward voltage drop ● High Surge Capability | KEXIN 科信电子 | ||
| 1N5817W | SCHOTTKY BARRIER DIODE Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High temperature soldering guaranteed: 260/10°C seconds,0.375(9.5mm) lead length, 5 lbs. (2.3kg) tension This i | SMCDIODE 桑德斯微电子 | ||
| 1N5817W | SCHOTTK Y BARRIER DIODE Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l | SY 顺烨电子 | ||
| 1N5817W | SCHOTTKY BARRIER RECTIFIERS 文件:383.39 Kbytes Page:3 Pages | YFWDIODE 佑风微 | ||
| 1N5817W | SCHOTTKY DIODES SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS 文件:319.46 Kbytes Page:5 Pages | AITSEMI 创瑞科技 | ||
| 1N5817W | 1 A Surface Mount Schottky Barrier Diode 文件:470.76 Kbytes Page:2 Pages | BYTESONIC 松浩电子 | ||
| 1N5817W | 肖特基二极管 | zhxsemi 汉欣电子 | ||
| 1N5817W | 肖特基二极管 | CHINABASE 创基电子 | ||
| 1N5817W | 肖特基二极管 | JINGDAO 晶导 | ||
| 1N5817W | SCHOTTKY BARRIER DIODE 文件:471.87 Kbytes Page:3 Pages | YFWDIODE 佑风微 | ||
| 1N5817W | SCHOTTKY BARRIER RECTIFIER 文件:277.45 Kbytes Page:5 Pages | RECTRON 丽正国际 | ||
| 1N5817W | SCHOTTKY BARRIER RECTIFIER 文件:287.13 Kbytes Page:5 Pages | RECTRON 丽正国际 | ||
| SCHOTTKY BARRIER RECTIFIERS 1 AMPERE 20, 30 and 40 VOLTS Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, | Motorola 摩托罗拉 | |||
| Schottky barrier diodes DESCRIPTION The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec™(1) technology. FEATURES • Low switching losses • Fast recovery time • Guard ring protected • Hermetically s | Philips 飞利浦 | |||
| LOW DROP POWER SCHOTTKY RECTIFIER DESCRIPTION Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in DO41 these devices are intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and small battery chargers. FEATURES AND BENEF | STMICROELECTRONICS 意法半导体 | |||
| 1 AMPERE SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 40 Volts CURRENT - 1.0 Ampere) VOLTAGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequency inverters ,f | PANJIT 強茂 | |||
| 1 AMPERE SCHOTTKY BARRIER RECTIFIERS VOLTAGE - 20 to 40 Volts CURRENT - 1.0 Ampere? 
 | Surge | |||
| 1 A SURFACE MOUNT SCHOTTKY BARRIER DIODE 1 A SURFACE MOUNT SCHOTTKY BARRIER DIODE Plastic surface mounted package; 2 leads | SEMTECH_ELEC 先之科半导体 | |||
| SCHOTTKY BARRIER DIODES SCHOTTKY BARRIER DIODES PRV : 20 - 40 Volts IO : 1.0 Ampere MECHANICAL DATA : * Case : SOD-123 * Weight : 0.01 gram (approximately) * 1N5817WB Marking Code : A0 * 1N5818WB Marking Code : ME * 1N5819WB Marking Code : SR | EIC | |||
| 1 A Surface Mount Schottky Barrier Diode 1 A Surface Mount Schottky Barrier Diode Plastic surface mounted package; 2 leads | ZSELEC 淄博圣诺 | |||
| SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Negligible Reverse Recovery Time • Low Reverse Capacitance • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 3) • Qualified to AEC-Q101 Standards for High Reliability | YIXIN 壹芯微 | |||
| SCHOTTKY BARRIER DIODE FEATURES ♦ Low Forward Voltage Drop ♦ Guard Ring Construction for Transient Protection ♦ Negligible Reverse Recovery Time ♦ Low Capacitance ♦ Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA ♦ Case: SOD-323 ♦ Terminals: Solderable per MIL-STD-750, Method 2026 ♦ Appro | YFWDIODE 佑风微 | |||
| SCHOTTKY BARRIER RECTIFIERS FEATURES • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability • Low forward voltage drop • High surge capability • For use in low voltage, high frequency inverters, free wheeling, and pola | FS | |||
| Schottky barrier diode Features General rectification Low VF; Low IR High reliability | TECHPUBLIC 台舟电子 | |||
| Schottky Barrier Rectifiers Features ● Metal silicon junction, majority carrier conduction ● Guarding for overvoltage protection ● Low power loss, high efficiency ● High current capability ● Low forward voltage drop ● High surge capability ● For use in low voltage, high frequency inverters, free wheeling, and pola | PJSEMI 平晶半导体 | |||
| Schottky Barrier Diodes Features ● For use in low voltage, high frequency inverters ● Free wheeling, and polarity protection applications. | KEXIN 科信电子 | |||
| SCHOTTKY BARRIER RECTIFIERS 文件:383.39 Kbytes Page:3 Pages | YFWDIODE 佑风微 | |||
| SCHOTTKY BARRIER DIODE 文件:471.87 Kbytes Page:3 Pages | YFWDIODE 佑风微 | |||
| 1 A Surface Mount Schottky B arrier Diode 文件:523.419 Kbytes Page:3 Pages | BYTESONIC 松浩电子 | |||
| SCHOTTKY BARRIER RECTIFIERS 文件:472.43 Kbytes Page:3 Pages | YFWDIODE 佑风微 | |||
| SCHOTTKY BARRIER RECTIFIER 文件:287.13 Kbytes Page:5 Pages | RECTRON 丽正国际 | 
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 | 
|---|---|---|---|---|---|---|---|
| TOSHIBA/东芝 | 2450+ | SOD123 | 6540 | 只做原装正品现货或订货假一赔十! | |||
| ST | 10+ | SOT-123 | 3000 | 一级代理,专注军工、汽车、医疗、工业、新能源、电力 | |||
| 国产 | 24+ | SOD-323 | 88000 | 郑重承诺只做原装进口现货 | |||
| ST(意法) | 24+ | SOD123 | 7350 | 现货供应,当天可交货!免费送样,原厂技术支持!!! | |||
| JXND/嘉兴南电 | 24+ | NA/ | 115240 | 原装现货,当天可交货,原型号开票 | |||
| ST | 23+ | SOD123 | 20000 | ||||
| ST | 24+ | SOD123 | 5000 | 全新原装正品,现货销售 | |||
| CJ/长电 | 25+ | SOD-123 | 157269 | 明嘉莱只做原装正品现货 | |||
| TOSHIBA | 原厂封装 | 9800 | 原装进口公司现货假一赔百 | ||||
| ST | 24+ | SOD123 | 8000 | 新到现货,只做全新原装正品 | 
1N5817W芯片相关品牌
1N5817W规格书下载地址
1N5817W参数引脚图相关
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