1N5817价格

参考价格:¥0.1250

型号:1N5817 品牌:MULTICOMP 备注:这里有1N5817多少钱,2025年最近7天走势,今日出价,今日竞价,1N5817批发/采购报价,1N5817行情走势销售排行榜,1N5817报价。
型号 功能描述 生产厂家&企业 LOGO 操作
1N5817

SCHOTTKY BARRIER RECTIFIERS 1 AMPERE 20, 30 and 40 VOLTS

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola
1N5817

Schottky barrier diodes

DESCRIPTION The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec™(1) technology. FEATURES • Low switching losses • Fast recovery time • Guard ring protected • Hermetically s

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

1N5817

LOW DROP POWER SCHOTTKY RECTIFIER

DESCRIPTION Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in DO41 these devices are intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and small battery chargers. FEATURES AND BENEF

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
1N5817

1 AMPERE SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 40 Volts CURRENT - 1.0 Ampere)

VOLTAGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequency inverters ,f

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT
1N5817

1 AMPERE SCHOTTKY BARRIER RECTIFIERS VOLTAGE - 20 to 40 Volts CURRENT - 1.0 Ampere?

Surge

Surge Components

Surge
1N5817

1.0A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

WTEWon-Top Electronics

毅星電子毅星电子股份有限公司

WTE
1N5817

1AMPERE SCHOTTKY BARRIER RECTIFIER

TRSYS

Transys Electronics

TRSYS
1N5817

SCHOTTKY BARRIER RECTIFIER(VOLTAGE RANGE - 20 to 40 Volts CURRENT - 1.0 Ampere)

VOLTAGE RANGE - 20 to 40 Volts CURRENT - 1.0 Ampere FEATURES ✶Low switching noise ✶Low forward voltage drop ✶High current capability ✶High switching capability ✶High reliability ✶High surge capability

WINGSWing Shing Computer Components

永盛电子永盛电子(香港)有限公司

WINGS
1N5817

SCHOTTKY BARRIER DIODE

SEMTECHSemtech Corporation

升特

SEMTECH
1N5817

SCHOTTKY BARRIER RECTIFIER

VOLTAGE: 20 TO 40V CURRENT: 1.0A FEATURES • Epitaxial construction for chip • High current capability • Low forward voltage drop • Low power loss, high efficiency • High surge capability • High temperature soldering guaranteed: 250°C/10sec/0.375(9.5mm) lead length at 5 lbs tension

SSE

Shanghai Sunrise Electronics

SSE
1N5817

1.0 Ampere Schottky Barrier Rectifiers

Features • 1.0 ampere operation at TA = 90°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
1N5817

SCHOTTKY BARRIER RECTIFIER DIODES

PRV : 20 - 40 Volts IO : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliability * High efficiency * Low power loss * Low cost * Low forward voltage drop * Pb / RoHS Free

EIC

EIC discrete Semiconductors

EIC
1N5817

1 AMP SCHOTTKY BARRIER RECTIFIER

Features • Metal semiconductor junction with guard ring • Epitaxial construction • low forward voltage drop • High current capability • Easily cleaned with freon, alcohol, chlorothene and similar solvents • Plastic material UL recognized 94V-O • For use in low voltage, high frequency in

FujiFuji Electric

富士电机富士电机株式会社

Fuji
1N5817

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere FEATURES * The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 * Metal silicon junction, majority carrier conduction * Guardring for overvoltage protection * Low power loss, high efficiency *

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

ZOWIE
1N5817

1.0AMP. SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

JGD
1N5817

1.0A SCHOTTKY BARRIER RECTIFIER

Features ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application ● Lead F

DIODESDiodes Incorporated

美台半导体

DIODES
1N5817

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction

BYTES

Bytes

BYTES
1N5817

TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE - 20 to 40 Volts CURRENT - 1.0 Ampere FEATURES • Low switching noise • Low forward voltage drop • High current capability • High switching capability • High reliability • High surge capability

DCCOM

Dc Components

DCCOM
1N5817

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

FORMOSA
1N5817

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Guardring for overvoltage protection ♦ Low power loss, high efficiency ♦

GE

GE Industrial Company

GE
1N5817

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere Features ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Metal silicon junction, majority carrier conduction ● Guardring for overvoltage protection ● Low power loss, high efficiency ● High cu

Good-Ark

GOOD-ARK Electronics

Good-Ark
1N5817

1 Amp Schottky Barrier Rectifier 20 to 40 Volts

Features • Guard Ring Protection • Low Forward Voltage • Low Power Loss For High Efficiency • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/RoHS Compliant (Note1) (PSuffix designates Compliant. See ordering information)

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
1N5817

SCHOTTKY BARRIER DIODES

Reverse Voltage 20 to 40V Forward Current 1.0A Feature & Dimensions * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Low power loss,high efficiency * For use in low voltage high frequency inverters, free wheeling,and polarity protection applications

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
1N5817

Schottky Barrier Rectifiers

• Nominal current 1 A • Repetitive peak reverse voltage 20...40 V • Plastic case DO-15 (DO-204AC) • Weight approx. 0.4 g • Plastic material has UL classification 94V-0 • Standard packa

DiotecDiotec Semiconductor

德欧泰克

Diotec
1N5817

1 Amp Schottky Rectifier

1 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● Low Forward Voltage ● High Reliability ● High Current Capability

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5817

Schottky Barrier Rectifiers

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in    accordance to WEEE 2002/96/EC

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
1N5817

1.0 Ampere Schottky Barrier Rectifiers

Features • 1.0 ampere operation at TA = 90°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
1N5817

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

FORMOSA
1N5817

Schottky barrier rectifiers diodes

Forward Current: 1 A Reverse Voltage: 20 to 40 V Features ● Max. solder temperature: 260°C ● Plastic material has UL classification 94V-0

SemikronSemikron International

赛米控丹佛斯

Semikron
1N5817

SCHOTTKY BARRIER RECTIFIERS

1.0 AMPS ● Plastic material used carries UL flammability classification 94V-0 ● Extremely low Vf, low power loss, high efficiency ● High stable oxide passivated junction ● Low stored charge, majority carrier conduction

STANSON

Stanson Technology

STANSON
1N5817

Axial Lead Schottky Power Rectifiers

WEITRON

Weitron Technology

WEITRON
1N5817

Axial Lead Rectifiers

Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−volt

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
1N5817

1.0 AMP. Schottky Barrier Rectifiers

Voltage Range 20 to 40 Volts Current 1.0 Ampere Features ◇ Low forward voltage drop ◇ High current capability ◇ High reliability ◇ High surge current capability

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC
1N5817

1.0 Amp SCHOTTKY BARRIER RECTIFIERS

Features ■ EXTREMELY LOW VF ■ LOW POWER LOSS - HIGH EFFICIENCY ■ LOW STORED CHARGE; MAJORITY CARRIER CONDUCTION ■ MEETS UL SPECIFICATION 94V-0

FCIFirst Components International

戈采戈采企业股份有限公司

FCI
1N5817

SCHOTTKY DIODE

FEATURES Power dissipation PD : 300 mW(Tamb=25℃) Collector current IF : 1 A Collector-base voltage VR : 1N5817: 20 V 1N5819: 40 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃

TELTokyo Electron Ltd.

东电电子东京电子有限公司

TEL
1N5817

1 AMP SCHOTTKY BARRIER RECTIFIERS

FEATURES ● Metal semiconductor junction with guard ring ● Epitaxial construction ● Low forward voltage drop ● High current capacity ● For use in low voltage,high frequency inverters free wheeling, and polarity protection applications ● RoHS COMPLIANT

DEC

DIOTEC Electronics Corporation

DEC
1N5817

1.0 AMP. SCHOTTKY BARRIER RECTIFIERS

Voltage Range 20 to 40 Volts Current 1.0 Amperes Features * Low forward voltage drop * High current capability * High reliability * High surge current capability

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE
1N5817

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction

UNIOHMUniohm

台湾厚声

UNIOHM
1N5817

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 20 --- 40 V CURRENT: 1.0 A FEATURES ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection appli

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
1N5817

Schottky Barrier Rectifier Diodes

Features ● For Surface Mounted Applications ● Metal Silicon Junction, Majority Carrier Conduction ● Low Power Loss, High Efficiency ● High Forward Surge Current Capability

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
1N5817

1.0AMP. Schottky Barrier Rectifier

VOLTAGE: 20 TO 40V CURRENT: 1.0A Specification Features: ▪ Case: Epoxy, Molded ▪ Weight: 0.4Gram (Approximately) ▪ High current capability, Low forward voltage drop ▪ High surge current capability ▪ Finish: All External Surfaces Corrosion Resistant And Terminal Leads Are Readily Solderab

TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd

德昌电子德昌电子(集团)有限公司

TAK_CHEONG
1N5817

VOLTAGE 20V ~ 40V 1.0AMP Schottky Barrier Rectifiers

FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
1N5817

SCHOTTKY BARRIER RECTIFIER

VOLTAGE:20-40V CURRENT:1.0A FEATURES • Low switching noise • Low forward voltage drop • High current capability • High switching capabitity • High reliability • High surge capability

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重庆平伟实业重庆平伟实业股份有限公司

CHONGQING
1N5817

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES • Fast switching. • Low forward voltage, high current capability. • Low power loss, high efficiency. • High current surge capability. • High temperature soldering guaranteed: 250°C/10 seconds, 0.375 (9.5mm) lead length at 5 lbs

MICMIC GROUP RECTIFIERS

昌福电子昌福电子有限公司

MIC
1N5817

SCHOTTKY BARRIER RECTIFIERS

Features • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability • low forward voltage drop • High surge capability • For use in low voltage, high frequency inverters, free wheeling, and pola

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC
1N5817

SCHOTTKY BARRIER RECTIFIER DIODES

PRV : 20 - 40 Volts IO : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliability * High efficiency * Low power loss * Low cost * Low forward voltage drop

SYNSEMI

SynSemi,Inc.

SYNSEMI
1N5817

Schottky Barrier Rectifiers

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

MOSPEC
1N5817

SCHOTTKY BARRIER RECTIFIERS

REVERSE VOLTAGE - 20 to 40 Volts FORWARD CURRENT - 1.0 Ampere FEATURES ● Metal-Semiconductor junction with guard ring ● Epitaxial construction ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 ● For use in low voltage,high frequency in

CTC

ctconline

CTC
1N5817

SCHOTTKY BARRIER RECTIFIERS

AXIAL LEAD RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial consrjction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency invert

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N5817

1.0Amp Silicon Schottky Barrier Rectifiers

Features • Low forward voltage drop • High current capability • High surge current capability • High reliability • Epitaxial construction

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

CYSTEKEC
1N5817

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage 20 to 40 Volts Forward Current - 1.0 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • High cu

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集团济南晶恒电子有限责任公司

JINANJINGHENG
1N5817

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Metal silicon junction,majority carrier conduction ● Guardring for overvoltage protection ● Low power loss,high efficiency ● High curre

DIOTECH

Diotech Company.

DIOTECH
1N5817

Schottky Barrier Rectifiers

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SILAN
1N5817

SCHOTTKY BARRIER RECTIFIER VOLTAGE: 20 TO 40V CURRENT: 1.0A

VOLTAGE: 20 TO 40V CURRENT: 1.0A FEATURE High current capability, Low forward voltage drop Low power loss, high efficiency High surge capability High temperature soldering guaranteed 250°C /10sec/0.375 lead length at 5 lbs tension

GULFSEMIGulf Semiconductor

海湾电子海湾电子(山东)有限公司

GULFSEMI
1N5817

Schottky Rectifier, 1.0 A

DESCRIPTION The 1N5817 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial leaded outline

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
1N5817

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction

TGS

Tiger Electronic Co.,Ltd

TGS
1N5817

PLASTIC SCHOTTKY BARRIER RECTIFIER

Features • Low Forward Voltage Drop • High Current Capability • High temperature soldering guaranteed: 260℃/10 seconds, 0.375 (9.5mm) lead length, 5 lbs. (2.3kg) tension • Lead and body according with RoHS standard

DACHANGRugao Dachang Electronics Co., Ltd

大昌电子如皋市大昌电子有限公司

DACHANG
1N5817

Schottky Barrier Rectifier

Reverse Voltage: 20 to 40V Forward Current: 1.0A Features - Plastic package has Underwriters Laboratory Flammability Classification 94V-0 - Low power loss, high efficiency - For use in low voltage high frequency inverters, free wheeling, and polarity protection applications - Guardri

COMCHIPComchip Technology

典琦典琦科技股份有限公司

COMCHIP
1N5817

CURRENT 1.0Ampere VOLTAGE 20 to 40 Volts

Features • Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction, majority carrier conduction • Guard ring for overvoltage protection • Low power loss, high efficiency • High current capability, Low forward voltage drop • High surge capabi

DAESAN

Daesan Electronics Corp.

DAESAN
1N5817

SCHOTTKY BARRIER RECTIFIERS

REVERSE VOLTAGE - 20 to 40 Volts FORWARD CURRENT - 1.0 Ampere FEATURES ● Metal-Semiconductor junction with gard ring ● Epitaxial construction ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 ● For use in low vlotage, high frequency in

HY

HY ELECTRONIC CORP.

HY

1N5817产品属性

  • 类型

    描述

  • 型号

    1N5817

  • 功能描述

    肖特基二极管与整流器 Vr/20V Io/1A T/R

  • RoHS

  • 制造商

    Skyworks Solutions, Inc.

  • 产品

    Schottky Diodes

  • 峰值反向电压

    2 V

  • 正向连续电流

    50 mA

  • 配置

    Crossover Quad

  • 正向电压下降

    370 mV

  • 最大功率耗散

    75 mW

  • 工作温度范围

    - 65 C to + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-143

  • 封装

    Reel

更新时间:2025-8-5 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
24+
标准封装
22048
全新原装正品/价格优惠/质量保障
TWGMC臺灣迪嘉
25+
SOD323
36000
TWGMC臺灣迪嘉原装现货1N5817WS即刻询购立享优惠#长期有排单订
三年内
1983
只做原装正品
24+/25+
329
原装正品现货库存价优
ON
23+
NA
8021
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品
ON
24+
DO-41
8540
只做原装正品现货或订货假一赔十!
星海
23+
DO-41
32078
10年以上分销商,原装进口件,服务型企业
MICROSEMI
23+
NA
686
专做原装正品,假一罚百!
扬杰
25+
DO-41
10000
扬杰原厂一级代理商,价格优势!
GW
24+
DIP
6980
原装现货,可开13%税票

1N5817芯片相关品牌

  • ANALOGICTECH
  • ASTRODYNE
  • CT
  • DSK
  • EIC
  • EMCORE
  • EXXELIA
  • MTRONPTI
  • NTE
  • P-TEC
  • WECO
  • Yamaha

1N5817数据表相关新闻