GOLD BONDED DIODES(Low forward voltage, low power consumption)

JEDEC DO-7 PACKAGE

SCHOTTKY BARRIER DIODES

SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT Qualified per MIL-PRF-19500/444

Small-Signal Diode Schottky Diodes

Features ◆ For general purpose applications ◆ Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching

SMALL SIGNAL SCHOTTKY DIODES

VOLTAGE RANGE: 70V POWER DISSIPATION: 400 mW FEATURES ◇ For general purpose applications ◇ fast switching and low logic level applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching m ake it i

400 mWatt Small Signal Schottky Diode 60 to 70 Volts

Features • High Reverse Breakdown Voltage • Low Forward Voltage Drop • For General Purpose Application

SCHOTTKY BARRIER DIODES

VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diode

SMALL SIGNAL SCHOTTKY DIODE

DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. Matched batches are available on request.

SCHOTTKY BARRIER DIODES

• 1N5711-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/444 • 1N5712-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/445 • SCHOTTKY BARRIER DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED

SCHOTTKY BARRIER SWITCHING DIODE

Features ● Ultra-Fast Switching Speed ● High Reverse Breakdown Voltage ● Low Forward Voltage Drop ● Guard Ring Junction Protection

Schottky Diodes

Features • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low for ward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast swit

Schottky Barrier Diodes for General Purpose Applications

Description The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D conv

Schottky Barrier Switching Diode

Features • Moisture Sensitivity: Level 1 per J-STD-020C • High Reverse Breakdown Voltage • Low Forward Voltage Drop • For General Purpose Application • Marking : Cathode band and type number • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • For general purpose applications • Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast

SCHOTTKY BARRIER DIODES

VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diode

SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT

SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT Qualified per MIL-PRF-19500/444

SCHOTTKY BARRIER DIODES

DESCRIPTION This Schottky barrier diode is metallurgically bonded and offers military grade qualifications for high-reliability applications on “1N” prefixed numbers. This small diode is hermetically sealed and bonded into a DO-35 glass package. FEATURES • JEDEC registered 1N5711-1, 1N5712-1, 1

Schottky Barrier Diodes for General Purpose Applications

Description/Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or

400 mWatt Small Signal Schottky Diode 60 to 70 Volts

Features • Moisture Sensitivity: Level 1 per J-STD-020C • High Reverse Breakdown Voltage • Low Forward Voltage Drop • For General Purpose Application • Marking : Cathode band and type number • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information

15mA Axial Leaded Schottky Barrier Diodes

Features ● For general purpose applications ● Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switc

Pico Second Switching Speed

Description/Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or

General Purpose Axial Lead Glass Packaged Schottky Diodes

Description and Applications These silicon diodes are packaged in a hermetic axial lead glass package. Various uses include detecting, mixing and switching at low power levels. They are suitable for commercial switching along with control functions in narrow band receivers. These diodes can also

SMALL SIGNAL SCHOTTKY DIODES

VOLTAGE RANGE: 70V POWER DISSIPATION: 400 mW FEATURES ◇ For general purpose applications ◇ fast switching and low logic level applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching m ake it i

Small Signal Schottky Diodes

VOLTAGE RANGE: 70V POWER DISSIPATION: 400 mW Features ◇ For general purpose applications ◇ fast switching and low logic level applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching m ake it i

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • For general purpose applications • Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast

SCHOTTKY DIODES

SCHOTTKY DIODES • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices.

SMALL SIGNAL SCHOTTKY DIODES

FEATURES For general purpose applications fast switching and low logic level applications Metal s ilicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and co

SCHOTTKY BARRIER DIODES

• 1N5711-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/444 • 1N5712-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/445 • SCHOTTKY BARRIER DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED

SCHOTTKY BARRIER DIODES

SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT Qualified per MIL-PRF-19500/444

SWITCHING DIODE

SWITCHING DIODE 1N5711-1, 1N5711US-1 • Hermetic, non-cavity glass package • Metallurgically bonded • Physical dimensions: Axial lead similar to DO-35 and surface mount similar to D-5D

SCHOTTKY BARRIER DIODES

DESCRIPTION This Schottky barrier diode is metallurgically bonded and offers military grade qualifications for high-reliability applications on “1N” prefixed numbers. This small diode is hermetically sealed and bonded into a DO-35 glass package. FEATURES • JEDEC registered 1N5711-1, 1N5712-1, 1

SCHOTTKY BARRIER DIODE

SCHOTTKY DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT

SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT Qualified per MIL-PRF-19500/444

SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT

SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT Qualified per MIL-PRF-19500/444

SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT

SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT Qualified per MIL-PRF-19500/444

SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT

SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT Qualified per MIL-PRF-19500/444

SCHOTTKY BARRIER DIODES

SCHOTTKY BARRIER DIODES – LEADLESS PACKAGE FOR SURFACE MOUNT – METALLURGICALLY BONDED – DOUBLE PLUG CONSTRUCTION Qualified per MIL-PRF-19500/444

SCHOTTKY BARRIER DIODES

• 1N5711UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS PER MIL-PRF-19500/444 • 1N5712UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS PER MIL-PRF 19500/445 • SCHOTTKY BARRIER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION

SWITCHING DIODE

SWITCHING DIODE 1N5711-1, 1N5711US-1 • Hermetic, non-cavity glass package • Metallurgically bonded • Physical dimensions: Axial lead similar to DO-35 and surface mount similar to D-5D

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance • Surface Mount Package Ideally Suited for Automatic Insertion • Lead Free/RoHS Compliant (Note 3)

Surface mount schottky barrier diode

FEATURES ● Low Forward Voltage Drop. ● Guard Ring Construction for Transient Protection. ● Fast Switching Time. ● Low Reverse Capacitance. ● Surface Mount Package Ideally Suited for Automatic Insertion. APPLICATIONS ● Surface mount fast switching schottky diode.

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance • Surface Mount Package Ideally Suited for Automatic Insertion • Lead Free/RoHS Compliant (Note 3)

Surface Mount Schottky Barrier Diode

Voltage Range 70 Volts 250m Watts Power Dissipation Features ◇ Low forward voltage drop ◇ Guard Ring Construction for Transient Protection ◇ Fast switching time ◇ Low Reverse Capacitance ◇ Surface mount package ideally suited for automatic insertion

Surface Mount Schottky Barrier Diode

Voltage Range 70 Volts 250m Watts Power Dissipation Features ◇ Low forward voltage drop ◇ Guard Ring Construction for Transient Protection ◇ Fast switching time ◇ Low Reverse Capacitance ◇ Surface mount package ideally suited for automatic insertion

Surface mount schottky barrier diode

FEATURES ● Low Forward Voltage Drop. ● Guard Ring Construction for Transient Protection. ● Fast Switching Time. ● Low Reverse Capacitance. ● Surface Mount Package Ideally Suited for Automatic Insertion. APPLICATIONS ● Surface mount fast switching schottky diode.

Low Forward Voltage Drop

Features ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Fast Switching Time ● Low Reverse Capacitance ● Surface Mount Package Ideally Suited for Automatic Insertion

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Fast Switching Time ● Low Reverse Capacitance

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Low Forward Voltage Drop Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance • Surface Mount Package Ideally Suited for Automatic Insertion • Lead Free/RoHS Compliant (Note 3)

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance • Surface Mount Package Ideally Suited for Automatic Insertion • Lead Free/RoHS Compliant (Note 3)

SURFACE MOUNT SCHOTTKY BARIER DIODE

Features ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Prote ● Fast Switching Speed ● Low Capacitance ● Surface Mount Package ldeally Suited for Automatic Insertion

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Speed • Low Capacitance • Surface Mount Package Ideally Suited for Automated Insertion • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 3 and 4)

Low Forward Voltage Drop

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance • Surface Mount Package Ideally Suited for Automatic Insertion

SURFACE MOUNT SCHOTTKY BARRIER DIODES

Features ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Fast Switching Speed ● Low Capacitance ● Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data ● Case: SOD-323, Molded Plastic ● Terminals: Plated Leads Solderable per MIL-STD-20

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Low Forward Voltage Drop Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

SMALL SIGNAL SCHOTTKY DIODES

FEATURES Metal-to-silicon junction and pulse applications with broad dynamic range High breakdown voltage Low turn-on voltage Ultrafast switching speed Prmarly intended for high level UHF/VHF detection

SMALL SIGNAL SCHOTTKY DIODES

Features ● Metal-to-silicon junction ● High breakdown voltage ● Low turn-on voltage ● Ultrafast switching speed

General Purpose Axial Lead Glass Packaged Schottky Diodes

Description and Applications These silicon diodes are packaged in a hermetic axial lead glass package. Various uses include detecting, mixing and switching at low power levels. They are suitable for commercial switching along with control functions in narrow band receivers. These diodes can also

SCHOTTKY DIODES

SCHOTTKY DIODES • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices.

Pico Second Switching Speed

Description/Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or

SMALL SIGNAL SCHOTTKY DIODES

FEATURES ◇ Metal-to-silicon junction ◇ High breakdown voltage ◇ Low turn-on voltage ◇ Ultrafast switching speed ◇ Prmarly intended for high level UHF/VHF detection and pulse applications with broad dynamic range