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位置：首页 > IC中文资料第6342页 > 1N571

1N571价格

参考价格：￥0.3567

型号：1N5711 品牌：STMICROELECTRONICS 备注：这里有1N571多少钱，2024年最近7天走势，今日出价，今日竞价，1N571批发/采购报价，1N571行情走势销售排行榜，1N571报价。
型号 功能描述 生产厂家&企业 LOGO 操作
1N571

GOLDBONDEDDIODES(Lowforwardvoltage,lowpowerconsumption)

JEDECDO-7PACKAGE

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1
1N5711

SchottkyBarrierDiodesforGeneralPurposeApplications

Description The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcost glasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logorA-Dconv

HPAgilent(Hewlett-Packard)

安捷伦科技安捷伦科技有限公司

HP
1N5711

SchottkyBarrierSwitchingDiode

Features •MoistureSensitivity:Level1perJ-STD-020C •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication •Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
1N5711

SMALLSIGNALSCHOTTKYDIODE

DESCRIPTION Metaltosiliconjunctiondiodefeaturinghighbreakdown,lowturn-onvoltageandultrafastswitching.PrimarlyintendedforhighlevelUHF/VHFdetectionandpulseapplicationwithbroaddynamicrange. Matchedbatchesareavailableonrequest.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
1N5711

SCHOTTKYBARRIERDIODES

•1N5711-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/444 •1N5712-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/445 •SCHOTTKYBARRIERDIODES •HERMETICALLYSEALED •METALLURGICALLYBONDED

CDI-DIODE

Compensated Deuices Incorporated

CDI-DIODE
1N5711

SCHOTTKYBARRIERSWITCHINGDIODE

Features ●Ultra-FastSwitchingSpeed ●HighReverseBreakdownVoltage ●LowForwardVoltageDrop ●GuardRingJunctionProtection

DIODESDiodes Incorporated

达尔科技

DIODES
1N5711

SchottkyDiodes

Features •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichis protectedbyaPNjunctionguardring.Thelowfor wardvoltagedropandfastswitchingmakeitideal forprotectionofMOSdevices,steering,biasing andcouplingdiodesforfastswit

GE

GE Industrial Company

GE
1N5711

SCHOTTKYBARRIERDIODES

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5711

Small-SignalDiodeSchottkyDiodes

Features ◆Forgeneralpurposeapplications ◆Metal-on-siliconSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfast switchingmakeitidealforprotectionofMOSdevices,steering, biasingandcouplingdiodesforfastswitching

Good-Ark

Good-Ark

Good-Ark
1N5711

400mWattSmallSignalSchottkyDiode60to70Volts

Features •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication

CHENYIShanghai Lunsure Electronic Tech

商朗电子上海商朗电子科技有限公司

CHENYI
1N5711

SCHOTTKYBARRIERDIODES

VRRM:70V,60V FEATURES: •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode

SYNSEMI

SynSemi，Inc.

SYNSEMI
1N5711

SMALLSIGNALSCHOTTKYDIODES

FEATURES •Forgeneralpurposeapplications •Metal-on-siliconjunctionSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfastswitching makeitidealforprotectionofMOSdevices,steering,biasingand couplingdiodesforfast

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集团济南晶恒电子有限责任公司

JINANJINGHENG
1N5711

SCHOTTKYBARRIERDIODES

VRRM:70V,60V FEATURES: •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode

EIC

EIC

EIC
1N5711

SMALLSIGNALSCHOTTKYDIODES

VOLTAGERANGE:70VPOWERDISSIPATION:400mW FEATURES ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeiti

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
1N5711

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5711

SCHOTTKYBARRIERDIODES

DESCRIPTION ThisSchottkybarrierdiodeismetallurgicallybondedandoffersmilitarygradequalificationsforhigh-reliabilityapplicationson“1N”prefixednumbers.ThissmalldiodeishermeticallysealedandbondedintoaDO-35glasspackage. FEATURES •JEDECregistered1N5711-1,1N5712-1,1

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5711

SchottkyBarrierDiodesforGeneralPurposeApplications

Description/Applications The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcostglasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N5711

400mWattSmallSignalSchottkyDiode60to70Volts

Features •MoistureSensitivity:Level1perJ-STD-020C •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication •Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
1N5711

15mAAxialLeadedSchottkyBarrierDiodes

Features ●Forgeneralpurposeapplications ●Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiodesfor fastswitc

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
1N5711

PicoSecondSwitchingSpeed

Description/Applications The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcostglasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logor

AVAGOAvago

安华高安华高科技

AVAGO
1N5711

GeneralPurposeAxialLeadGlassPackagedSchottkyDiodes

DescriptionandApplications Thesesilicondiodesarepackagedinahermeticaxialleadglasspackage.Varioususesincludedetecting,mixingandswitchingatlowpowerlevels.Theyaresuitableforcommercialswitchingalongwithcontrolfunctionsinnarrowbandreceivers.Thesediodescanalso

MA-COM

M/A-COM Technology Solutions, Inc.

MA-COM
1N5711

SMALLSIGNALSCHOTTKYDIODES

VOLTAGERANGE:70VPOWERDISSIPATION:400mW FEATURES ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeiti

DSK

Diode Semiconductor Korea

DSK
1N5711

SmallSignalSchottkyDiodes

VOLTAGERANGE:70VPOWERDISSIPATION:400mW Features ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeiti

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
1N5711

SMALLSIGNALSCHOTTKYDIODES

FEATURES •Forgeneralpurposeapplications •Metal-on-siliconjunctionSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfastswitching makeitidealforprotectionofMOSdevices,steering,biasingand couplingdiodesforfast

JINGHENG

Jinan Jing Heng Electronics Co., Ltd.

JINGHENG
1N5711

SCHOTTKYDIODES

SCHOTTKYDIODES •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltagedrop andfastswitchingmakeitidealforprotectionofMOSdevices.

DIGITRON

Digitron Semiconductors

DIGITRON
1N5711

SMALLSIGNALSCHOTTKYDIODES

FEATURES Forgeneralpurposeapplications fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandco

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

SAMYANG
1N5711-1

SCHOTTKYBARRIERDIODES

•1N5711-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/444 •1N5712-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/445 •SCHOTTKYBARRIERDIODES •HERMETICALLYSEALED •METALLURGICALLYBONDED

CDI-DIODE

Compensated Deuices Incorporated

CDI-DIODE
1N5711-1

SCHOTTKYBARRIERDIODES

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5711-1

SWITCHINGDIODE

SWITCHINGDIODE1N5711-1,1N5711US-1 •Hermetic,non-cavityglasspackage •Metallurgicallybonded •Physicaldimensions:AxialleadsimilartoDO-35 andsurfacemountsimilartoD-5D

SENSITRON

Sensitron

SENSITRON
1N5711-1

SCHOTTKYBARRIERDIODES

DESCRIPTION ThisSchottkybarrierdiodeismetallurgicallybondedandoffersmilitarygradequalificationsforhigh-reliabilityapplicationson“1N”prefixednumbers.ThissmalldiodeishermeticallysealedandbondedintoaDO-35glasspackage. FEATURES •JEDECregistered1N5711-1,1N5712-1,1

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5711CSM

SCHOTTKYDIODEINHERMETICCERAMICSURFACEMOUNTPACKAGEFORHIGHRELIABILITYAPPLICATIONS

SCHOTTKYDIODEINHERMETICCERAMICSURFACEMOUNTPACKAGEFORHIGHRELIABILITYAPPLICATIONS

SEME-LAB

Seme LAB

SEME-LAB
1N5711CSM

SCHOTTKYBARRIERDIODE

SCHOTTKYDIODEINHERMETICCERAMICSURFACEMOUNTPACKAGEFORHIGHRELIABILITYAPPLICATIONS

TTELECTT Electronics.

梯梯电子集成制造服务(苏州)有限公司

TTELEC
1N5711UB

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5711UBCA

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5711UBCC

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5711UBD

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5711UR-1

SCHOTTKYBARRIERDIODES

•1N5711UR-1AVAILABLEINJAN,JANTX,JANTXVandJANSPERMIL-PRF-19500/444 •1N5712UR-1AVAILABLEINJAN,JANTX,JANTXVandJANSPERMIL-PRF19500/445 •SCHOTTKYBARRIERDIODES •LEADLESSPACKAGEFORSURFACEMOUNT •METALLURGICALLYBONDED,DOUBLEPLUGCONSTRUCTION

CDI-DIODE

Compensated Deuices Incorporated

CDI-DIODE
1N5711UR-1

SCHOTTKYBARRIERDIODES

SCHOTTKYBARRIERDIODES –LEADLESSPACKAGEFORSURFACEMOUNT –METALLURGICALLYBONDED –DOUBLEPLUGCONSTRUCTION QualifiedperMIL-PRF-19500/444

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5711US-1

SWITCHINGDIODE

SWITCHINGDIODE1N5711-1,1N5711US-1 •Hermetic,non-cavityglasspackage •Metallurgicallybonded •Physicaldimensions:AxialleadsimilartoDO-35 andsurfacemountsimilartoD-5D

SENSITRON

Sensitron

SENSITRON
1N5711W

Surfacemountschottkybarrierdiode

FEATURES ●LowForwardVoltageDrop. ●GuardRingConstructionforTransientProtection. ●FastSwitchingTime. ●LowReverseCapacitance. ●SurfaceMountPackageIdeallySuitedforAutomaticInsertion. APPLICATIONS ●Surfacemountfastswitchingschottkydiode.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
1N5711W

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedfor AutomaticInsertion •LeadFree/RoHSCompliant(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES
1N5711W

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedfor AutomaticInsertion •LeadFree/RoHSCompliant(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES
1N5711W

SurfaceMountSchottkyBarrierDiode

VoltageRange70Volts250mWattsPowerDissipation Features ◇Lowforwardvoltagedrop ◇GuardRingConstructionforTransient Protection ◇Fastswitchingtime ◇LowReverseCapacitance ◇Surfacemountpackageideallysuitedfor automaticinsertion

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
1N5711W

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features ●LowForwardVoltageDrop ●GuardRingConstructionforTransient Protection ●FastSwitchingTime ●LowReverseCapacitance

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
1N5711W

LowForwardVoltageDrop

Features ●LowForwardVoltageDrop ●GuardRingConstructionforTransient Protection ●FastSwitchingTime ●LowReverseCapacitance ●SurfaceMountPackageIdeallySuitedfor AutomaticInsertion

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
1N5711W

SurfaceMountSchottkyBarrierDiode

VoltageRange70Volts250mWattsPowerDissipation Features ◇Lowforwardvoltagedrop ◇GuardRingConstructionforTransient Protection ◇Fastswitchingtime ◇LowReverseCapacitance ◇Surfacemountpackageideallysuitedfor automaticinsertion

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
1N5711W

Surfacemountschottkybarrierdiode

FEATURES ●LowForwardVoltageDrop. ●GuardRingConstructionforTransient Protection. ●FastSwitchingTime. ●LowReverseCapacitance. ●SurfaceMountPackageIdeallySuitedfor AutomaticInsertion. APPLICATIONS ●Surfacemountfastswitchingschottkydiode.

DSK

Diode Semiconductor Korea

DSK
1N5711W_

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedfor AutomaticInsertion •LeadFree/RoHSCompliant(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES
1N5711W-7-F

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedfor AutomaticInsertion •LeadFree/RoHSCompliant(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES
1N5711WS

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingSpeed •LowCapacitance •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes3and4)

DIODESDiodes Incorporated

达尔科技

DIODES
1N5711WS

SURFACEMOUNTSCHOTTKYBARIERDIODE

Features ●LowForwardVoltageDrop ●GuardRingConstructionforTransientProte ●FastSwitchingSpeed ●LowCapacitance ●SurfaceMountPackageldeallySuitedforAutomaticInsertion

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
1N5711WS

SURFACEMOUNTSCHOTTKYBARRIERDIODES

Features ●LowForwardVoltageDrop ●GuardRingConstructionforTransientProtection ●FastSwitchingSpeed ●LowCapacitance ●SurfaceMountPackageIdeallySuitedforAutomaticInsertion MechanicalData ●Case:SOD-323,MoldedPlastic ●Terminals:PlatedLeadsSolderableperMIL-STD-20

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
1N5711WS

LowForwardVoltageDrop

Features •LowForwardVoltageDrop •GuardRingConstructionforTransient Protection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedfor AutomaticInsertion

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
1N5712

SCHOTTKYDIODES

SCHOTTKYDIODES •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltagedrop andfastswitchingmakeitidealforprotectionofMOSdevices.

DIGITRON

Digitron Semiconductors

DIGITRON
1N5712

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5712

PicoSecondSwitchingSpeed

Description/Applications The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcostglasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logor

AVAGOAvago

安华高安华高科技

AVAGO
1N5712

SMALLSIGNALSCHOTTKYDIODES

FEATURES ◇Metal-to-siliconjunction ◇Highbreakdownvoltage ◇Lowturn-onvoltage ◇Ultrafastswitchingspeed ◇PrmarlyintendedforhighlevelUHF/VHFdetectionandpulseapplicationswithbroaddynamicrange

DSK

Diode Semiconductor Korea

DSK
1N5712

SmallSignalSchottkyDiodes

Features ◇Metal-to-siliconjunction ◇Highbreakdownvoltage ◇Lowturn-onvoltage ◇Ultrafastswitchingspeed ◇PrmarlyintendedforhighlevelUHF/VHFdetectionandpulseapplicationswithbroaddynamicrange

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
1N5712

SMALLSIGNALSCHOTTKYDIODES

SMALLSIGNALSCHOTTKYDIODES FEATURES ◇Metal-to-siliconjunction ◇Highbreakdownvoltage ◇Lowturn-onvoltage ◇Ultrafastswitchingspeed ◇PrmarlyintendedforhighlevelUHF/VHFdetectionandpulseapplicationswithbroaddynamicrange

KISEMICONDUCTORKwang Myoung I.S. CO.,LTD

明阳国际贸易广州市明阳国际贸易有限公司

KISEMICONDUCTOR
1N5712

SMALLSIGNALSCHOTTKYDIODES

FEATURES •Metal-on-siliconjunction •Highbreakdownvoltage •Lowturn-onvoltage •Ultrafastswitchingspeed •PrimarilyintendedforhighlevelUHF/VHFdetectionandpulseapplicationswithbroaddynamicrange •ThediodeisalsoavailableintheMiniMELFcasewithtypedesignationLL5

JINGHENG

Jinan Jing Heng Electronics Co., Ltd.

JINGHENG

1N571产品属性

  • 类型

    描述

  • 型号

    1N571

  • 功能描述

    GOLD BONDED DIODES(Low forward voltage, low power consumption)

1N571供应商更多...

更新时间：2024-5-14 9:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳宇航军工半导体有限公司
1N5711WS-7-F
DIODES
19+
SOD323
58756
原厂代理渠道,每一颗芯片都可追溯原厂；
询价
深圳市祥瑞智科技有限公司
1N5711
ST
22+
SOD123
12206
原厂原装,价格优势!13246658303
询价
深圳市兴灿科技有限公司
1N5711
STM原厂目录
23+
DO35
96000
全新原装
询价
千层芯半导体(深圳)有限公司
1N5711WS-F
DIODES
17+
SOD-323
6010
只做原装正品
询价
深圳市吉利鑫科技发展有限公司
1N5711W-7-F
DIODESINCORPORATED
22+
10000
绝对原装现货热卖
询价
深圳市恒意法电子有限公司
1N5711WS-7-F
Diodes Incorporated
21+
SOD-323
51000
正规渠道原装正品现货
询价
深圳市博浩通科技有限公司
1N5711
STMicro.
23+
DO-35
7750
全新原装优势
询价
深圳市纽联电子有限公司
1n5711
31aSchottkyVHF/UHFDem70v15mA2p
1000
全新原装现货 样品可售
询价
佛山市芯光达科技有限公司
1N5711W-7-F
DIODES(美台)
23+
SOD-123
3003
进口原装假一赔十可开增值票
询价
深圳市华瑞顺电子科技有限公司
1N5711WS-7-F
DIODES/美台
22+
SOD-323
12680
询价

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