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1N571价格

参考价格：￥0.3567

型号：1N5711 品牌：STMICROELECTRONICS 备注：这里有1N571多少钱，2025年最近7天走势，今日出价，今日竞价，1N571批发/采购报价，1N571行情走势销售排行榜，1N571报价。

型号	功能描述	生产厂家&企业
1N571	GOLDBONDEDDIODES(Lowforwardvoltage,lowpowerconsumption) JEDECDO-7PACKAGE	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商
1N5711	SchottkyBarrierDiodesforGeneralPurposeApplications Description The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcost glasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logorA-Dconv	HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司
1N5711	SchottkyBarrierSwitchingDiode Features •MoistureSensitivity:Level1perJ-STD-020C •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication •Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation	MCCMicro Commercial Components 美微科美微科半导体股份有限公司
1N5711	SMALLSIGNALSCHOTTKYDIODE DESCRIPTION Metaltosiliconjunctiondiodefeaturinghighbreakdown,lowturn-onvoltageandultrafastswitching.PrimarlyintendedforhighlevelUHF/VHFdetectionandpulseapplicationwithbroaddynamicrange. Matchedbatchesareavailableonrequest.	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
1N5711	SCHOTTKYBARRIERDIODES •1N5711-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/444 •1N5712-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/445 •SCHOTTKYBARRIERDIODES •HERMETICALLYSEALED •METALLURGICALLYBONDED	CDI-DIODE Compensated Deuices Incorporated
1N5711	SCHOTTKYBARRIERSWITCHINGDIODE Features ●Ultra-FastSwitchingSpeed ●HighReverseBreakdownVoltage ●LowForwardVoltageDrop ●GuardRingJunctionProtection	DIODESDiodes Incorporated 美台半导体
1N5711	SchottkyDiodes Features •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichis protectedbyaPNjunctionguardring.Thelowfor wardvoltagedropandfastswitchingmakeitideal forprotectionofMOSdevices,steering,biasing andcouplingdiodesforfastswit	GE GE Industrial Company
1N5711	SCHOTTKYBARRIERDIODES SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5711	Small-SignalDiodeSchottkyDiodes Features ◆Forgeneralpurposeapplications ◆Metal-on-siliconSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfast switchingmakeitidealforprotectionofMOSdevices,steering, biasingandcouplingdiodesforfastswitching	Good-Ark GOOD-ARK Electronics
1N5711	400mWattSmallSignalSchottkyDiode60to70Volts Features •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication	CHENYIShanghai Lunsure Electronic Tech 商朗电子上海商朗电子科技有限公司
1N5711	SCHOTTKYBARRIERDIODES VRRM:70V,60V FEATURES: •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode	SYNSEMI SynSemi，Inc.
1N5711	SMALLSIGNALSCHOTTKYDIODES FEATURES •Forgeneralpurposeapplications •Metal-on-siliconjunctionSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfastswitching makeitidealforprotectionofMOSdevices,steering,biasingand couplingdiodesforfast	JINANJINGHENGJinan Jingheng (Group) Co.,Ltd 晶恒集团济南晶恒电子有限责任公司
1N5711	SCHOTTKYBARRIERDIODES VRRM:70V,60V FEATURES: •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode	EIC EIC discrete Semiconductors
1N5711	SMALLSIGNALSCHOTTKYDIODES VOLTAGERANGE:70VPOWERDISSIPATION:400mW FEATURES ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeiti	BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司
1N5711	SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5711	SCHOTTKYBARRIERDIODES DESCRIPTION ThisSchottkybarrierdiodeismetallurgicallybondedandoffersmilitarygradequalificationsforhigh-reliabilityapplicationson“1N”prefixednumbers.ThissmalldiodeishermeticallysealedandbondedintoaDO-35glasspackage. FEATURES •JEDECregistered1N5711-1,1N5712-1,1	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5711	SchottkyBarrierDiodesforGeneralPurposeApplications Description/Applications The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcostglasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logor	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
1N5711	400mWattSmallSignalSchottkyDiode60to70Volts Features •MoistureSensitivity:Level1perJ-STD-020C •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication •Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation	MCCMicro Commercial Components 美微科美微科半导体股份有限公司
1N5711	15mAAxialLeadedSchottkyBarrierDiodes Features ●Forgeneralpurposeapplications ●Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiodesfor fastswitc	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司
1N5711	PicoSecondSwitchingSpeed Description/Applications The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcostglasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logor	AVAGOAVAGO TECHNOLOGIES LIMITED 安华高
1N5711	GeneralPurposeAxialLeadGlassPackagedSchottkyDiodes DescriptionandApplications Thesesilicondiodesarepackagedinahermeticaxialleadglasspackage.Varioususesincludedetecting,mixingandswitchingatlowpowerlevels.Theyaresuitableforcommercialswitchingalongwithcontrolfunctionsinnarrowbandreceivers.Thesediodescanalso	MA-COM M/A-COM Technology Solutions, Inc.
1N5711	SMALLSIGNALSCHOTTKYDIODES VOLTAGERANGE:70VPOWERDISSIPATION:400mW FEATURES ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeiti	DSK Diode Semiconductor Korea
1N5711	SmallSignalSchottkyDiodes VOLTAGERANGE:70VPOWERDISSIPATION:400mW Features ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeiti	LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司
1N5711	SMALLSIGNALSCHOTTKYDIODES FEATURES •Forgeneralpurposeapplications •Metal-on-siliconjunctionSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfastswitching makeitidealforprotectionofMOSdevices,steering,biasingand couplingdiodesforfast	JINGHENGJinan Jing Heng Electronics Co., Ltd. 晶恒济南晶恒电子有限责任公司
1N5711	SCHOTTKYDIODES SCHOTTKYDIODES •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltagedrop andfastswitchingmakeitidealforprotectionofMOSdevices.	DIGITRON Digitron Semiconductors
1N5711	SMALLSIGNALSCHOTTKYDIODES FEATURES Forgeneralpurposeapplications fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandco	SAMYANGSAMYANG ELECTRONICS CO.,LTD. 三阳电子三阳电子有限公司
1N5711-1	SCHOTTKYBARRIERDIODES •1N5711-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/444 •1N5712-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/445 •SCHOTTKYBARRIERDIODES •HERMETICALLYSEALED •METALLURGICALLYBONDED	CDI-DIODE Compensated Deuices Incorporated
1N5711-1	SCHOTTKYBARRIERDIODES SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5711-1	SWITCHINGDIODE SWITCHINGDIODE1N5711-1,1N5711US-1 •Hermetic,non-cavityglasspackage •Metallurgicallybonded •Physicaldimensions:AxialleadsimilartoDO-35 andsurfacemountsimilartoD-5D	SENSITRON SENSITRON SEMICONDUCTOR
1N5711-1	SCHOTTKYBARRIERDIODES DESCRIPTION ThisSchottkybarrierdiodeismetallurgicallybondedandoffersmilitarygradequalificationsforhigh-reliabilityapplicationson“1N”prefixednumbers.ThissmalldiodeishermeticallysealedandbondedintoaDO-35glasspackage. FEATURES •JEDECregistered1N5711-1,1N5712-1,1	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5711CSM	SCHOTTKYDIODEINHERMETICCERAMICSURFACEMOUNTPACKAGEFORHIGHRELIABILITYAPPLICATIONS SCHOTTKYDIODEINHERMETICCERAMICSURFACEMOUNTPACKAGEFORHIGHRELIABILITYAPPLICATIONS	SEME-LAB Seme LAB
1N5711CSM	SCHOTTKYBARRIERDIODE SCHOTTKYDIODEINHERMETICCERAMICSURFACEMOUNTPACKAGEFORHIGHRELIABILITYAPPLICATIONS	TTELECTT Electronics. TT电子公司梯梯电子集成制造服务(苏州)有限公司
1N5711UB	SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5711UBCA	SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5711UBCC	SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5711UBD	SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5711UR-1	SCHOTTKYBARRIERDIODES •1N5711UR-1AVAILABLEINJAN,JANTX,JANTXVandJANSPERMIL-PRF-19500/444 •1N5712UR-1AVAILABLEINJAN,JANTX,JANTXVandJANSPERMIL-PRF19500/445 •SCHOTTKYBARRIERDIODES •LEADLESSPACKAGEFORSURFACEMOUNT •METALLURGICALLYBONDED,DOUBLEPLUGCONSTRUCTION	CDI-DIODE Compensated Deuices Incorporated
1N5711UR-1	SCHOTTKYBARRIERDIODES SCHOTTKYBARRIERDIODES –LEADLESSPACKAGEFORSURFACEMOUNT –METALLURGICALLYBONDED –DOUBLEPLUGCONSTRUCTION QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5711US-1	SWITCHINGDIODE SWITCHINGDIODE1N5711-1,1N5711US-1 •Hermetic,non-cavityglasspackage •Metallurgicallybonded •Physicaldimensions:AxialleadsimilartoDO-35 andsurfacemountsimilartoD-5D	SENSITRON SENSITRON SEMICONDUCTOR
1N5711W	Surfacemountschottkybarrierdiode FEATURES ●LowForwardVoltageDrop. ●GuardRingConstructionforTransientProtection. ●FastSwitchingTime. ●LowReverseCapacitance. ●SurfaceMountPackageIdeallySuitedforAutomaticInsertion. APPLICATIONS ●Surfacemountfastswitchingschottkydiode.	BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司
1N5711W	SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedfor AutomaticInsertion •LeadFree/RoHSCompliant(Note3)	DIODESDiodes Incorporated 美台半导体
1N5711W	SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedfor AutomaticInsertion •LeadFree/RoHSCompliant(Note3)	DIODESDiodes Incorporated 美台半导体
1N5711W	SurfaceMountSchottkyBarrierDiode VoltageRange70Volts250mWattsPowerDissipation Features ◇Lowforwardvoltagedrop ◇GuardRingConstructionforTransient Protection ◇Fastswitchingtime ◇LowReverseCapacitance ◇Surfacemountpackageideallysuitedfor automaticinsertion	TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司
1N5711W	SURFACEMOUNTSCHOTTKYBARRIERDIODE LowForwardVoltageDrop FastSwitchingSpeed PNJunctionGuardRingforTransientand ESDProtection ForGeneralPurposeSwitchingApplications PlasticMaterial–ULRecognitionFlammability Classification94V-0	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司
1N5711W	Surfacemountschottkybarrierdiode FEATURES ●LowForwardVoltageDrop. ●GuardRingConstructionforTransient Protection. ●FastSwitchingTime. ●LowReverseCapacitance. ●SurfaceMountPackageIdeallySuitedfor AutomaticInsertion. APPLICATIONS ●Surfacemountfastswitchingschottkydiode.	DSK Diode Semiconductor Korea
1N5711W	LowForwardVoltageDrop Features ●LowForwardVoltageDrop ●GuardRingConstructionforTransient Protection ●FastSwitchingTime ●LowReverseCapacitance ●SurfaceMountPackageIdeallySuitedfor AutomaticInsertion	WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳深圳市永而佳实业有限公司
1N5711W	SURFACEMOUNTSCHOTTKYBARRIERDIODE Features ●LowForwardVoltageDrop ●GuardRingConstructionforTransient Protection ●FastSwitchingTime ●LowReverseCapacitance	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司
1N5711W	SurfaceMountSchottkyBarrierDiode VoltageRange70Volts250mWattsPowerDissipation Features ◇Lowforwardvoltagedrop ◇GuardRingConstructionforTransient Protection ◇Fastswitchingtime ◇LowReverseCapacitance ◇Surfacemountpackageideallysuitedfor automaticinsertion	LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司
1N5711W_	SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedfor AutomaticInsertion •LeadFree/RoHSCompliant(Note3)	DIODESDiodes Incorporated 美台半导体
1N5711W-7-F	SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedfor AutomaticInsertion •LeadFree/RoHSCompliant(Note3)	DIODESDiodes Incorporated 美台半导体
1N5711WS	SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingSpeed •LowCapacitance •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes3and4)	DIODESDiodes Incorporated 美台半导体
1N5711WS	SURFACEMOUNTSCHOTTKYBARIERDIODE Features ●LowForwardVoltageDrop ●GuardRingConstructionforTransientProte ●FastSwitchingSpeed ●LowCapacitance ●SurfaceMountPackageldeallySuitedforAutomaticInsertion	KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司
1N5711WS	LowForwardVoltageDrop Features •LowForwardVoltageDrop •GuardRingConstructionforTransient Protection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedfor AutomaticInsertion	WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳深圳市永而佳实业有限公司
1N5711WS	SURFACEMOUNTSCHOTTKYBARRIERDIODES Features ●LowForwardVoltageDrop ●GuardRingConstructionforTransientProtection ●FastSwitchingSpeed ●LowCapacitance ●SurfaceMountPackageIdeallySuitedforAutomaticInsertion MechanicalData ●Case:SOD-323,MoldedPlastic ●Terminals:PlatedLeadsSolderableperMIL-STD-20	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司
1N5711W-T1	SURFACEMOUNTSCHOTTKYBARRIERDIODE LowForwardVoltageDrop FastSwitchingSpeed PNJunctionGuardRingforTransientand ESDProtection ForGeneralPurposeSwitchingApplications PlasticMaterial–ULRecognitionFlammability Classification94V-0	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司
1N5712	SMALLSIGNALSCHOTTKYDIODES FEATURES Metal-to-siliconjunction andpulseapplicationswithbroaddynamicrange Highbreakdownvoltage Lowturn-onvoltage Ultrafastswitchingspeed PrmarlyintendedforhighlevelUHF/VHFdetection	SAMYANGSAMYANG ELECTRONICS CO.,LTD. 三阳电子三阳电子有限公司
1N5712	SMALLSIGNALSCHOTTKYDIODES Features ●Metal-to-siliconjunction ●Highbreakdownvoltage ●Lowturn-onvoltage ●Ultrafastswitchingspeed	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司
1N5712	GeneralPurposeAxialLeadGlassPackagedSchottkyDiodes DescriptionandApplications Thesesilicondiodesarepackagedinahermeticaxialleadglasspackage.Varioususesincludedetecting,mixingandswitchingatlowpowerlevels.Theyaresuitableforcommercialswitchingalongwithcontrolfunctionsinnarrowbandreceivers.Thesediodescanalso	MA-COM M/A-COM Technology Solutions, Inc.
1N5712	SMALLSINGALSCHOTTKYDIODES FEATURES •Metal-on-siliconjunction •Highbreakdownvoltage •Lowturn-onvoltage •Ultrafastswitchingspeed •PrimarilyintendedforhighlevelUHF/VHFdetectionandpulseapplicationswithbroaddynamicrange •ThediodeisalsoavailableintheMiniMELFcasewithtypedesignationLL5	GXELECTRONICSShandong Xinghe Minghui Electronics Co., Ltd 星合电子山东星合明辉电子有限公司
1N5712	SCHOTTKYDIODES SCHOTTKYDIODES •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltagedrop andfastswitchingmakeitidealforprotectionofMOSdevices.	DIGITRON Digitron Semiconductors

1N571产品属性

类型
描述
型号
1N571
功能描述
GOLD BONDED DIODES(Low forward voltage, low power consumption)

1N571供应商更多...

更新时间：2025-8-1 8:53:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市英瑞尔电子科技有限公司	1N5712	M-PULSE	24+	SMD	3200	进口原装假一赔百	询价
深圳市湘达电子科技有限公司	1N5719-54	MA/COM	22+	NA	12800	只做原装,价格优惠,长期供货。	询价
天津市博通航睿技术有限公司	1N5711W-7-F	MULTICOMP			198		询价
深圳市诚利顺电子科技有限公司	1N5711W-7	DIODES	23+	SOD123	120000	十七年VIP会员,诚信经营，一手货源，原装正品可零售！	询价
深圳市天芯威科技有限公司	1N5711WS-7-F	DIODES	22+23+	SOD-323	8000	新到现货，只做原装进口	询价
深圳市中赛美电子科技有限公司	1N5711	ST/意法半导体	23+	DO-35	12700	买原装认准中赛美	询价
深圳市英科美电子有限公司	1N5711W-7-F	DIODES/美台	2223+	SOD123	26800	只做原装正品假一赔十为客户做到零风险	询价
深圳和润天下电子科技有限公司	1N5711WS-7-F	DIODES	2022+PB	SOD123	13500		询价
深圳市英特法电子科技有限公司	1N5711	ST/意法半导体	2023+	DO-35	6000	原装正品现货、支持第三方检验、终端BOM表可配单提供	询价
深圳市粤骏腾电子科技有限公司	1N5711WS	DIODES/美台	24+	SOD323	98000	原装现货假一罚十	询价

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