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位置：首页 > IC中文资料第1705页 > 1N5711

1N5711价格

参考价格：￥0.3567

型号：1N5711 品牌：STMICROELECTRONICS 备注：这里有1N5711多少钱，2024年最近7天走势，今日出价，今日竞价，1N5711批发/采购报价，1N5711行情走势销售排行榜，1N5711报价。
型号 功能描述 生产厂家&企业 LOGO 操作
1N5711

SMALLSIGNALSCHOTTKYDIODE

DESCRIPTION Metaltosiliconjunctiondiodefeaturinghighbreakdown,lowturn-onvoltageandultrafastswitching.PrimarlyintendedforhighlevelUHF/VHFdetectionandpulseapplicationwithbroaddynamicrange. Matchedbatchesareavailableonrequest.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
1N5711

SCHOTTKYBARRIERDIODES

•1N5711-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/444 •1N5712-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/445 •SCHOTTKYBARRIERDIODES •HERMETICALLYSEALED •METALLURGICALLYBONDED

CDI-DIODE

Compensated Deuices Incorporated

CDI-DIODE
1N5711

SCHOTTKYBARRIERSWITCHINGDIODE

Features ●Ultra-FastSwitchingSpeed ●HighReverseBreakdownVoltage ●LowForwardVoltageDrop ●GuardRingJunctionProtection

DIODESDiodes Incorporated

达尔科技

DIODES
1N5711

SchottkyDiodes

Features •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichis protectedbyaPNjunctionguardring.Thelowfor wardvoltagedropandfastswitchingmakeitideal forprotectionofMOSdevices,steering,biasing andcouplingdiodesforfastswit

GE

GE Industrial Company

GE
1N5711

SchottkyBarrierDiodesforGeneralPurposeApplications

Description The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcost glasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logorA-Dconv

HPAgilent(Hewlett-Packard)

安捷伦科技安捷伦科技有限公司

HP
1N5711

SchottkyBarrierSwitchingDiode

Features •MoistureSensitivity:Level1perJ-STD-020C •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication •Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
1N5711

SCHOTTKYBARRIERDIODES

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5711

Small-SignalDiodeSchottkyDiodes

Features ◆Forgeneralpurposeapplications ◆Metal-on-siliconSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfast switchingmakeitidealforprotectionofMOSdevices,steering, biasingandcouplingdiodesforfastswitching

Good-Ark

Good-Ark

Good-Ark
1N5711

SMALLSIGNALSCHOTTKYDIODES

VOLTAGERANGE:70VPOWERDISSIPATION:400mW FEATURES ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeiti

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
1N5711

400mWattSmallSignalSchottkyDiode60to70Volts

Features •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication

CHENYIShanghai Lunsure Electronic Tech

商朗电子上海商朗电子科技有限公司

CHENYI
1N5711

SCHOTTKYBARRIERDIODES

VRRM:70V,60V FEATURES: •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode

SYNSEMI

SynSemi，Inc.

SYNSEMI
1N5711

SMALLSIGNALSCHOTTKYDIODES

FEATURES •Forgeneralpurposeapplications •Metal-on-siliconjunctionSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfastswitching makeitidealforprotectionofMOSdevices,steering,biasingand couplingdiodesforfast

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集团济南晶恒电子有限责任公司

JINANJINGHENG
1N5711

SCHOTTKYBARRIERDIODES

VRRM:70V,60V FEATURES: •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode

EIC

EIC

EIC
1N5711

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5711

SCHOTTKYBARRIERDIODES

DESCRIPTION ThisSchottkybarrierdiodeismetallurgicallybondedandoffersmilitarygradequalificationsforhigh-reliabilityapplicationson“1N”prefixednumbers.ThissmalldiodeishermeticallysealedandbondedintoaDO-35glasspackage. FEATURES •JEDECregistered1N5711-1,1N5712-1,1

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5711

400mWattSmallSignalSchottkyDiode60to70Volts

Features •MoistureSensitivity:Level1perJ-STD-020C •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication •Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
1N5711

SchottkyBarrierDiodesforGeneralPurposeApplications

Description/Applications The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcostglasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N5711

15mAAxialLeadedSchottkyBarrierDiodes

Features ●Forgeneralpurposeapplications ●Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiodesfor fastswitc

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
1N5711

PicoSecondSwitchingSpeed

Description/Applications The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcostglasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logor

AVAGOAvago

安华高安华高科技

AVAGO
1N5711

GeneralPurposeAxialLeadGlassPackagedSchottkyDiodes

DescriptionandApplications Thesesilicondiodesarepackagedinahermeticaxialleadglasspackage.Varioususesincludedetecting,mixingandswitchingatlowpowerlevels.Theyaresuitableforcommercialswitchingalongwithcontrolfunctionsinnarrowbandreceivers.Thesediodescanalso

MA-COM

M/A-COM Technology Solutions, Inc.

MA-COM
1N5711

SMALLSIGNALSCHOTTKYDIODES

VOLTAGERANGE:70VPOWERDISSIPATION:400mW FEATURES ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeiti

DSK

Diode Semiconductor Korea

DSK
1N5711

SmallSignalSchottkyDiodes

VOLTAGERANGE:70VPOWERDISSIPATION:400mW Features ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeiti

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
1N5711

SMALLSIGNALSCHOTTKYDIODES

FEATURES •Forgeneralpurposeapplications •Metal-on-siliconjunctionSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfastswitching makeitidealforprotectionofMOSdevices,steering,biasingand couplingdiodesforfast

JINGHENG

Jinan Jing Heng Electronics Co., Ltd.

JINGHENG
1N5711

SCHOTTKYDIODES

SCHOTTKYDIODES •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltagedrop andfastswitchingmakeitidealforprotectionofMOSdevices.

DIGITRON

Digitron Semiconductors

DIGITRON
1N5711

SMALLSIGNALSCHOTTKYDIODES

FEATURES Forgeneralpurposeapplications fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandco

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

SAMYANG
1N5711

SCHOTTKYBARRIERSWITCHINGDIODE

文件：273.845 Kbytes Page：2 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者：深圳市福田区吉富昌电子商行

SUNMATE
1N5711

封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR） 描述：RF DIODE SCHOTTKY 70V 250MW 分立半导体产品 二极管 - 射频

Broadcom Limited

Broadcom Limited

Broadcom Limited
1N5711

封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SCHOTTKY DIODE 分立半导体产品 二极管 - 整流器 - 单

MicrochipMicrochip Technology Inc.

微芯科技微芯科技股份有限公司

Microchip
1N5711-1

SCHOTTKYBARRIERDIODES

DESCRIPTION ThisSchottkybarrierdiodeismetallurgicallybondedandoffersmilitarygradequalificationsforhigh-reliabilityapplicationson“1N”prefixednumbers.ThissmalldiodeishermeticallysealedandbondedintoaDO-35glasspackage. FEATURES •JEDECregistered1N5711-1,1N5712-1,1

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5711-1

SCHOTTKYBARRIERDIODES

•1N5711-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/444 •1N5712-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/445 •SCHOTTKYBARRIERDIODES •HERMETICALLYSEALED •METALLURGICALLYBONDED

CDI-DIODE

Compensated Deuices Incorporated

CDI-DIODE
1N5711-1

SCHOTTKYBARRIERDIODES

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5711-1

SWITCHINGDIODE

SWITCHINGDIODE1N5711-1,1N5711US-1 •Hermetic,non-cavityglasspackage •Metallurgicallybonded •Physicaldimensions:AxialleadsimilartoDO-35 andsurfacemountsimilartoD-5D

SENSITRON

Sensitron

SENSITRON
1N5711CSM

SCHOTTKYDIODEINHERMETICCERAMICSURFACEMOUNTPACKAGEFORHIGHRELIABILITYAPPLICATIONS

SCHOTTKYDIODEINHERMETICCERAMICSURFACEMOUNTPACKAGEFORHIGHRELIABILITYAPPLICATIONS

SEME-LAB

Seme LAB

SEME-LAB
1N5711CSM

SCHOTTKYBARRIERDIODE

SCHOTTKYDIODEINHERMETICCERAMICSURFACEMOUNTPACKAGEFORHIGHRELIABILITYAPPLICATIONS

TTELECTT Electronics.

梯梯电子集成制造服务(苏州)有限公司

TTELEC
1N5711UB

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5711UBCA

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5711UBCC

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5711UBD

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5711UR-1

SCHOTTKYBARRIERDIODES

•1N5711UR-1AVAILABLEINJAN,JANTX,JANTXVandJANSPERMIL-PRF-19500/444 •1N5712UR-1AVAILABLEINJAN,JANTX,JANTXVandJANSPERMIL-PRF19500/445 •SCHOTTKYBARRIERDIODES •LEADLESSPACKAGEFORSURFACEMOUNT •METALLURGICALLYBONDED,DOUBLEPLUGCONSTRUCTION

CDI-DIODE

Compensated Deuices Incorporated

CDI-DIODE
1N5711UR-1

SCHOTTKYBARRIERDIODES

SCHOTTKYBARRIERDIODES –LEADLESSPACKAGEFORSURFACEMOUNT –METALLURGICALLYBONDED –DOUBLEPLUGCONSTRUCTION QualifiedperMIL-PRF-19500/444

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5711US-1

SWITCHINGDIODE

SWITCHINGDIODE1N5711-1,1N5711US-1 •Hermetic,non-cavityglasspackage •Metallurgicallybonded •Physicaldimensions:AxialleadsimilartoDO-35 andsurfacemountsimilartoD-5D

SENSITRON

Sensitron

SENSITRON
1N5711W

LowForwardVoltageDrop

Features ●LowForwardVoltageDrop ●GuardRingConstructionforTransient Protection ●FastSwitchingTime ●LowReverseCapacitance ●SurfaceMountPackageIdeallySuitedfor AutomaticInsertion

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
1N5711W

SurfaceMountSchottkyBarrierDiode

VoltageRange70Volts250mWattsPowerDissipation Features ◇Lowforwardvoltagedrop ◇GuardRingConstructionforTransient Protection ◇Fastswitchingtime ◇LowReverseCapacitance ◇Surfacemountpackageideallysuitedfor automaticinsertion

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
1N5711W

SurfaceMountSchottkyBarrierDiode

VoltageRange70Volts250mWattsPowerDissipation Features ◇Lowforwardvoltagedrop ◇GuardRingConstructionforTransient Protection ◇Fastswitchingtime ◇LowReverseCapacitance ◇Surfacemountpackageideallysuitedfor automaticinsertion

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
1N5711W

Surfacemountschottkybarrierdiode

FEATURES ●LowForwardVoltageDrop. ●GuardRingConstructionforTransient Protection. ●FastSwitchingTime. ●LowReverseCapacitance. ●SurfaceMountPackageIdeallySuitedfor AutomaticInsertion. APPLICATIONS ●Surfacemountfastswitchingschottkydiode.

DSK

Diode Semiconductor Korea

DSK
1N5711W

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedfor AutomaticInsertion •LeadFree/RoHSCompliant(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES
1N5711W

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedfor AutomaticInsertion •LeadFree/RoHSCompliant(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES
1N5711W

Surfacemountschottkybarrierdiode

FEATURES ●LowForwardVoltageDrop. ●GuardRingConstructionforTransientProtection. ●FastSwitchingTime. ●LowReverseCapacitance. ●SurfaceMountPackageIdeallySuitedforAutomaticInsertion. APPLICATIONS ●Surfacemountfastswitchingschottkydiode.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
1N5711W

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features ●LowForwardVoltageDrop ●GuardRingConstructionforTransient Protection ●FastSwitchingTime ●LowReverseCapacitance

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
1N5711W_

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedfor AutomaticInsertion •LeadFree/RoHSCompliant(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES
1N5711W-7-F

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedfor AutomaticInsertion •LeadFree/RoHSCompliant(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES
1N5711WS

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingSpeed •LowCapacitance •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes3and4)

DIODESDiodes Incorporated

达尔科技

DIODES
1N5711WS

SURFACEMOUNTSCHOTTKYBARIERDIODE

Features ●LowForwardVoltageDrop ●GuardRingConstructionforTransientProte ●FastSwitchingSpeed ●LowCapacitance ●SurfaceMountPackageldeallySuitedforAutomaticInsertion

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
1N5711WS

LowForwardVoltageDrop

Features •LowForwardVoltageDrop •GuardRingConstructionforTransient Protection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedfor AutomaticInsertion

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
1N5711WS

SURFACEMOUNTSCHOTTKYBARRIERDIODES

Features ●LowForwardVoltageDrop ●GuardRingConstructionforTransientProtection ●FastSwitchingSpeed ●LowCapacitance ●SurfaceMountPackageIdeallySuitedforAutomaticInsertion MechanicalData ●Case:SOD-323,MoldedPlastic ●Terminals:PlatedLeadsSolderableperMIL-STD-20

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
1N5711W

SURFACEMOUNTSCHOTTKYBARRIERDIODE

文件：300.987 Kbytes Page：2 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者：深圳市福田区吉富昌电子商行

SUNMATE
1N5711W

70VDetectionswitchtube

文件：289.848 Kbytes Page：2 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者：深圳市福田区吉富昌电子商行

SUNMATE
1N5711WS

70VDetectionswitchtube

文件：289.848 Kbytes Page：2 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者：深圳市福田区吉富昌电子商行

SUNMATE
1N5711WS

SURFACEMOUNTSCHOTTKYBARRIERDIODES

文件：289.848 Kbytes Page：2 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者：深圳市福田区吉富昌电子商行

SUNMATE
1N5711_15

Small-SignalDiodeSchottkyDiodes

文件：127.26 Kbytes Page：2 Pages

Good-Ark

Good-Ark

Good-Ark

1N5711产品属性

  • 类型

    描述

  • 型号

    1N5711

  • 功能描述

    肖特基二极管与整流器 15mA 70 Volt

  • RoHS

    否

  • 制造商

    Skyworks Solutions, Inc.

  • 产品

    Schottky Diodes

  • 峰值反向电压

    2 V

  • 正向连续电流

    50 mA

  • 配置

    Crossover Quad

  • 正向电压下降

    370 mV

  • 最大功率耗散

    75 mW

  • 工作温度范围

    - 65 C to + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-143

  • 封装

    Reel

1N5711供应商更多...

更新时间：2024-4-24 19:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市品优时代科技有限公司
1N5711WS
Diodes/美台
2021/2022+
NA
12000
原厂原装现货订货价格优势终端BOM表可配单提供样品
询价
中天科工半导体（深圳）有限公司
1N5711WS-7-F
Diodes Incorporated
23+
SC-76,SOD-323
30000
二极管-分立半导体产品-原装正品
询价
深圳市晴轩时代电子有限公司
1N5711W-7-F
DIODES/美台
21+
SOD-123
8800
公司只做原装正品
询价
深圳市凌旭科技有限公司
1N5711W-7-F
DIODES/美台
21+
SOD-123
14156
只做原装,一定有货,不止网上数量,量多可订货!
询价
深圳市大联智电子有限公司
1N5711WS-7-F
DIODES/美台
22+
SOD123
354000
询价
深圳市柏芯特电子科技有限公司
1N5711W-7-F
DIODES/美台
2023
SOD-123
6200
公司原装现货/支持实单
询价
深圳市易讯博科技有限公司
1N5711WS-7-F
DIODES
22+
NA
27000
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询价
深圳市艾宇欣科技有限公司
1N5711UR-1
Microsemi
1942+
N/A
908
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询价
深圳市振宏微科技有限公司
1N5711T25
agi
23+
NA
116
专做原装正品,假一罚百!
询价
深圳市创盛芯科技有限公司
1N5711W
DIODES/美台
22+
SOD123
1500
原装现货假一赔十
询价

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