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1N5711价格

参考价格：￥0.3567

型号：1N5711 品牌：STMICROELECTRONICS 备注：这里有1N5711多少钱，2025年最近7天走势，今日出价，今日竞价，1N5711批发/采购报价，1N5711行情走势销售排行榜，1N5711报价。

型号	功能描述	生产厂家&企业	LOGO
1N5711	SMALLSIGNALSCHOTTKYDIODE DESCRIPTION Metaltosiliconjunctiondiodefeaturinghighbreakdown,lowturn-onvoltageandultrafastswitching.PrimarlyintendedforhighlevelUHF/VHFdetectionandpulseapplicationwithbroaddynamicrange. Matchedbatchesareavailableonrequest.	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
1N5711	SCHOTTKYBARRIERDIODES •1N5711-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/444 •1N5712-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/445 •SCHOTTKYBARRIERDIODES •HERMETICALLYSEALED •METALLURGICALLYBONDED	CDI-DIODE Compensated Deuices Incorporated
1N5711	SCHOTTKYBARRIERSWITCHINGDIODE Features ●Ultra-FastSwitchingSpeed ●HighReverseBreakdownVoltage ●LowForwardVoltageDrop ●GuardRingJunctionProtection	DIODESDiodes Incorporated 美台半导体
1N5711	SchottkyDiodes Features •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichis protectedbyaPNjunctionguardring.Thelowfor wardvoltagedropandfastswitchingmakeitideal forprotectionofMOSdevices,steering,biasing andcouplingdiodesforfastswit	GE GE Industrial Company
1N5711	SchottkyBarrierDiodesforGeneralPurposeApplications Description The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcost glasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logorA-Dconv	HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司
1N5711	SchottkyBarrierSwitchingDiode Features •MoistureSensitivity:Level1perJ-STD-020C •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication •Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation	MCCMicro Commercial Components 美微科美微科半导体股份有限公司
1N5711	SCHOTTKYBARRIERDIODES SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5711	Small-SignalDiodeSchottkyDiodes Features ◆Forgeneralpurposeapplications ◆Metal-on-siliconSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfast switchingmakeitidealforprotectionofMOSdevices,steering, biasingandcouplingdiodesforfastswitching	Good-Ark GOOD-ARK Electronics
1N5711	SMALLSIGNALSCHOTTKYDIODES VOLTAGERANGE:70VPOWERDISSIPATION:400mW FEATURES ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeiti	BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司
1N5711	400mWattSmallSignalSchottkyDiode60to70Volts Features •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication	CHENYIShanghai Lunsure Electronic Tech 商朗电子上海商朗电子科技有限公司
1N5711	SCHOTTKYBARRIERDIODES VRRM:70V,60V FEATURES: •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode	SYNSEMI SynSemi，Inc.
1N5711	SMALLSIGNALSCHOTTKYDIODES FEATURES •Forgeneralpurposeapplications •Metal-on-siliconjunctionSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfastswitching makeitidealforprotectionofMOSdevices,steering,biasingand couplingdiodesforfast	JINANJINGHENGJinan Jingheng (Group) Co.,Ltd 晶恒集团济南晶恒电子有限责任公司
1N5711	SCHOTTKYBARRIERDIODES VRRM:70V,60V FEATURES: •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode	EIC EIC discrete Semiconductors
1N5711	SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5711	SCHOTTKYBARRIERDIODES DESCRIPTION ThisSchottkybarrierdiodeismetallurgicallybondedandoffersmilitarygradequalificationsforhigh-reliabilityapplicationson“1N”prefixednumbers.ThissmalldiodeishermeticallysealedandbondedintoaDO-35glasspackage. FEATURES •JEDECregistered1N5711-1,1N5712-1,1	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5711	400mWattSmallSignalSchottkyDiode60to70Volts Features •MoistureSensitivity:Level1perJ-STD-020C •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication •Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation	MCCMicro Commercial Components 美微科美微科半导体股份有限公司
1N5711	SchottkyBarrierDiodesforGeneralPurposeApplications Description/Applications The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcostglasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logor	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
1N5711	15mAAxialLeadedSchottkyBarrierDiodes Features ●Forgeneralpurposeapplications ●Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiodesfor fastswitc	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司
1N5711	PicoSecondSwitchingSpeed Description/Applications The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcostglasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logor	AVAGOAVAGO TECHNOLOGIES LIMITED 安华高
1N5711	GeneralPurposeAxialLeadGlassPackagedSchottkyDiodes DescriptionandApplications Thesesilicondiodesarepackagedinahermeticaxialleadglasspackage.Varioususesincludedetecting,mixingandswitchingatlowpowerlevels.Theyaresuitableforcommercialswitchingalongwithcontrolfunctionsinnarrowbandreceivers.Thesediodescanalso	MA-COM M/A-COM Technology Solutions, Inc.
1N5711	SMALLSIGNALSCHOTTKYDIODES VOLTAGERANGE:70VPOWERDISSIPATION:400mW FEATURES ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeiti	DSK Diode Semiconductor Korea
1N5711	SmallSignalSchottkyDiodes VOLTAGERANGE:70VPOWERDISSIPATION:400mW Features ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeiti	LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司
1N5711	SMALLSIGNALSCHOTTKYDIODES FEATURES •Forgeneralpurposeapplications •Metal-on-siliconjunctionSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfastswitching makeitidealforprotectionofMOSdevices,steering,biasingand couplingdiodesforfast	JINGHENGJinan Jing Heng Electronics Co., Ltd. 晶恒济南晶恒电子有限责任公司
1N5711	SCHOTTKYDIODES SCHOTTKYDIODES •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltagedrop andfastswitchingmakeitidealforprotectionofMOSdevices.	DIGITRON Digitron Semiconductors
1N5711	SMALLSIGNALSCHOTTKYDIODES FEATURES Forgeneralpurposeapplications fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandco	SAMYANGSAMYANG ELECTRONICS CO.,LTD. 三阳电子三阳电子有限公司
1N5711	SCHOTTKYBARRIERSWITCHINGDIODE 文件：273.845 Kbytes Page：2 Pages	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 PDF上传者：深圳冠荣电子有限公司
1N5711	封装/外壳：DO-204AH，DO-35，轴向包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：SCHOTTKY DIODE 分立半导体产品二极管 - 整流器 - 单	MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司
1N5711	封装/外壳：DO-204AH，DO-35，轴向包装：卷带（TR）描述：RF DIODE SCHOTTKY 70V 250MW 分立半导体产品二极管 - 射频	ETC 知名厂家	ETC
1N5711-1	SCHOTTKYBARRIERDIODES DESCRIPTION ThisSchottkybarrierdiodeismetallurgicallybondedandoffersmilitarygradequalificationsforhigh-reliabilityapplicationson“1N”prefixednumbers.ThissmalldiodeishermeticallysealedandbondedintoaDO-35glasspackage. FEATURES •JEDECregistered1N5711-1,1N5712-1,1	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5711-1	SCHOTTKYBARRIERDIODES •1N5711-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/444 •1N5712-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/445 •SCHOTTKYBARRIERDIODES •HERMETICALLYSEALED •METALLURGICALLYBONDED	CDI-DIODE Compensated Deuices Incorporated
1N5711-1	SCHOTTKYBARRIERDIODES SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5711-1	SWITCHINGDIODE SWITCHINGDIODE1N5711-1,1N5711US-1 •Hermetic,non-cavityglasspackage •Metallurgicallybonded •Physicaldimensions:AxialleadsimilartoDO-35 andsurfacemountsimilartoD-5D	SENSITRON SENSITRON SEMICONDUCTOR
1N5711CSM	SCHOTTKYDIODEINHERMETICCERAMICSURFACEMOUNTPACKAGEFORHIGHRELIABILITYAPPLICATIONS SCHOTTKYDIODEINHERMETICCERAMICSURFACEMOUNTPACKAGEFORHIGHRELIABILITYAPPLICATIONS	SEME-LAB Seme LAB
1N5711CSM	SCHOTTKYBARRIERDIODE SCHOTTKYDIODEINHERMETICCERAMICSURFACEMOUNTPACKAGEFORHIGHRELIABILITYAPPLICATIONS	TTELECTT Electronics. TT电子公司梯梯电子集成制造服务(苏州)有限公司
1N5711UB	SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5711UBCA	SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5711UBCC	SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5711UBD	SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5711UR-1	SCHOTTKYBARRIERDIODES •1N5711UR-1AVAILABLEINJAN,JANTX,JANTXVandJANSPERMIL-PRF-19500/444 •1N5712UR-1AVAILABLEINJAN,JANTX,JANTXVandJANSPERMIL-PRF19500/445 •SCHOTTKYBARRIERDIODES •LEADLESSPACKAGEFORSURFACEMOUNT •METALLURGICALLYBONDED,DOUBLEPLUGCONSTRUCTION	CDI-DIODE Compensated Deuices Incorporated
1N5711UR-1	SCHOTTKYBARRIERDIODES SCHOTTKYBARRIERDIODES –LEADLESSPACKAGEFORSURFACEMOUNT –METALLURGICALLYBONDED –DOUBLEPLUGCONSTRUCTION QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5711US-1	SWITCHINGDIODE SWITCHINGDIODE1N5711-1,1N5711US-1 •Hermetic,non-cavityglasspackage •Metallurgicallybonded •Physicaldimensions:AxialleadsimilartoDO-35 andsurfacemountsimilartoD-5D	SENSITRON SENSITRON SEMICONDUCTOR
1N5711W	LowForwardVoltageDrop Features ●LowForwardVoltageDrop ●GuardRingConstructionforTransient Protection ●FastSwitchingTime ●LowReverseCapacitance ●SurfaceMountPackageIdeallySuitedfor AutomaticInsertion	WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳深圳市永而佳实业有限公司
1N5711W	SurfaceMountSchottkyBarrierDiode VoltageRange70Volts250mWattsPowerDissipation Features ◇Lowforwardvoltagedrop ◇GuardRingConstructionforTransient Protection ◇Fastswitchingtime ◇LowReverseCapacitance ◇Surfacemountpackageideallysuitedfor automaticinsertion	LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司
1N5711W	SurfaceMountSchottkyBarrierDiode VoltageRange70Volts250mWattsPowerDissipation Features ◇Lowforwardvoltagedrop ◇GuardRingConstructionforTransient Protection ◇Fastswitchingtime ◇LowReverseCapacitance ◇Surfacemountpackageideallysuitedfor automaticinsertion	TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司
1N5711W	Surfacemountschottkybarrierdiode FEATURES ●LowForwardVoltageDrop. ●GuardRingConstructionforTransient Protection. ●FastSwitchingTime. ●LowReverseCapacitance. ●SurfaceMountPackageIdeallySuitedfor AutomaticInsertion. APPLICATIONS ●Surfacemountfastswitchingschottkydiode.	DSK Diode Semiconductor Korea
1N5711W	SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedfor AutomaticInsertion •LeadFree/RoHSCompliant(Note3)	DIODESDiodes Incorporated 美台半导体
1N5711W	SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedfor AutomaticInsertion •LeadFree/RoHSCompliant(Note3)	DIODESDiodes Incorporated 美台半导体
1N5711W	Surfacemountschottkybarrierdiode FEATURES ●LowForwardVoltageDrop. ●GuardRingConstructionforTransientProtection. ●FastSwitchingTime. ●LowReverseCapacitance. ●SurfaceMountPackageIdeallySuitedforAutomaticInsertion. APPLICATIONS ●Surfacemountfastswitchingschottkydiode.	BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司
1N5711W	SURFACEMOUNTSCHOTTKYBARRIERDIODE LowForwardVoltageDrop FastSwitchingSpeed PNJunctionGuardRingforTransientand ESDProtection ForGeneralPurposeSwitchingApplications PlasticMaterial–ULRecognitionFlammability Classification94V-0	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司
1N5711W	SURFACEMOUNTSCHOTTKYBARRIERDIODE Features ●LowForwardVoltageDrop ●GuardRingConstructionforTransient Protection ●FastSwitchingTime ●LowReverseCapacitance	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司
1N5711W_	SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedfor AutomaticInsertion •LeadFree/RoHSCompliant(Note3)	DIODESDiodes Incorporated 美台半导体
1N5711W-7-F	SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedfor AutomaticInsertion •LeadFree/RoHSCompliant(Note3)	DIODESDiodes Incorporated 美台半导体
1N5711WS	SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •FastSwitchingSpeed •LowCapacitance •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes3and4)	DIODESDiodes Incorporated 美台半导体
1N5711WS	SURFACEMOUNTSCHOTTKYBARIERDIODE Features ●LowForwardVoltageDrop ●GuardRingConstructionforTransientProte ●FastSwitchingSpeed ●LowCapacitance ●SurfaceMountPackageldeallySuitedforAutomaticInsertion	KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司
1N5711WS	LowForwardVoltageDrop Features •LowForwardVoltageDrop •GuardRingConstructionforTransient Protection •FastSwitchingTime •LowReverseCapacitance •SurfaceMountPackageIdeallySuitedfor AutomaticInsertion	WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳深圳市永而佳实业有限公司
1N5711WS	SURFACEMOUNTSCHOTTKYBARRIERDIODES Features ●LowForwardVoltageDrop ●GuardRingConstructionforTransientProtection ●FastSwitchingSpeed ●LowCapacitance ●SurfaceMountPackageIdeallySuitedforAutomaticInsertion MechanicalData ●Case:SOD-323,MoldedPlastic ●Terminals:PlatedLeadsSolderableperMIL-STD-20	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司
1N5711W-T1	SURFACEMOUNTSCHOTTKYBARRIERDIODE LowForwardVoltageDrop FastSwitchingSpeed PNJunctionGuardRingforTransientand ESDProtection ForGeneralPurposeSwitchingApplications PlasticMaterial–ULRecognitionFlammability Classification94V-0	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司
1N5711W	SURFACEMOUNTSCHOTTKYBARRIERDIODE 文件：300.987 Kbytes Page：2 Pages	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 PDF上传者：深圳冠荣电子有限公司
1N5711W	70VDetectionswitchtube 文件：289.848 Kbytes Page：2 Pages	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 PDF上传者：深圳冠荣电子有限公司
1N5711WS	70VDetectionswitchtube 文件：289.848 Kbytes Page：2 Pages	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 PDF上传者：深圳冠荣电子有限公司

1N5711产品属性

类型
描述
型号
1N5711
功能描述
肖特基二极管与整流器 15mA 70 Volt
RoHS
否
制造商
Skyworks Solutions, Inc.
产品
Schottky Diodes
峰值反向电压
2 V
正向连续电流
50 mA
配置
Crossover Quad
正向电压下降
370 mV
最大功率耗散
75 mW
工作温度范围
- 65 C to + 150 C
安装风格
SMD/SMT
封装/箱体
SOT-143
封装
Reel

1N5711供应商更多...

更新时间：2025-7-23 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	1N5711WS-7-F	DIODES(美台)	24+	SOD323	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市得捷芯城科技有限公司	1N5711W-7	Diodes(美台)	24+	NA/	8735	原厂直销,现货供应,账期支持!	询价
深圳市天芯威科技有限公司	1N5711WS-7-F	DIODES	22+23+	SOD-323	8000	新到现货，只做原装进口	询价
深圳市科芯源微电子有限公司	1N5711W-7-F	DIODES/美台	25+	SOD-123	54648	百分百原装现货实单必成	询价
深圳市科恒伟业电子有限公司	1N5711	Agilent	21+	VQFN	9800	只做原装正品假一赔十!正规渠道订货!	询价
深圳市弘扬芯城科技有限公司	1N5711WS-7-F	DIODES(美台)	2024+	SOD-323	500000	诚信服务,绝对原装原盘	询价
深圳市富利微电子科技有限公司	1N5711WS-7-F	DIODES/美台	24+	NA	30000	房间原装现货特价热卖,有单详谈	询价
深圳市润联芯城科技有限公司	1N5711W-7-F	DIODES/美台	23+	SOD-123	50000	原装正品支持实单	询价
中天科工半导体（深圳）有限公司	1N5711W-7-F	DIODES/美台	25+	SOD-123	37496	DIODES/美台全新特价1N5711W-7-F即刻询购立享优惠#长期有货	询价
深圳市联世界科技有限公司	1N5711	ST	24+/25+		8000	原装正品现货库存价优	询价

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2019-12-2

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DdatasheetPDF页码索引