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1N5711价格

参考价格：￥0.3567

型号：1N5711 品牌：STMICROELECTRONICS 备注：这里有1N5711多少钱，2026年最近7天走势，今日出价，今日竞价，1N5711批发/采购报价，1N5711行情走势销售排行榜，1N5711报价。

型号	功能描述	生产厂家企业	LOGO
1N5711	SCHOTTKY BARRIER DIODES SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT Qualified per MIL-PRF-19500/444	MICROSEMI 美高森美	MICROSEMI
1N5711	SCHOTTKY BARRIER DIODES DESCRIPTION This Schottky barrier diode is metallurgically bonded and offers military grade qualifications for high-reliability applications on “1N” prefixed numbers. This small diode is hermetically sealed and bonded into a DO-35 glass package. FEATURES • JEDEC registered 1N5711-1, 1N5712-1, 1	MICROSEMI 美高森美	MICROSEMI
1N5711	SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT Qualified per MIL-PRF-19500/444	MICROSEMI 美高森美	MICROSEMI
1N5711	SCHOTTKY BARRIER SWITCHING DIODE Features ● Ultra-Fast Switching Speed ● High Reverse Breakdown Voltage ● Low Forward Voltage Drop ● Guard Ring Junction Protection	DIODES 美台半导体	DIODES
1N5711	SCHOTTKY BARRIER DIODES VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diode	EIC	EIC
1N5711	Small-Signal Diode Schottky Diodes Features ◆ For general purpose applications ◆ Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching	GOOD-ARK 固锝电子	GOOD-ARK
1N5711	General Purpose Axial Lead Glass Packaged Schottky Diodes Description and Applications These silicon diodes are packaged in a hermetic axial lead glass package. Various uses include detecting, mixing and switching at low power levels. They are suitable for commercial switching along with control functions in narrow band receivers. These diodes can also	MA-COM	MA-COM
1N5711	Schottky Barrier Switching Diode Features • Moisture Sensitivity: Level 1 per J-STD-020C • High Reverse Breakdown Voltage • Low Forward Voltage Drop • For General Purpose Application • Marking : Cathode band and type number • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information	MCC	MCC
1N5711	400 mWatt Small Signal Schottky Diode 60 to 70 Volts Features • Moisture Sensitivity: Level 1 per J-STD-020C • High Reverse Breakdown Voltage • Low Forward Voltage Drop • For General Purpose Application • Marking : Cathode band and type number • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information	MCC	MCC
1N5711	Pico Second Switching Speed Description/Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or	AVAGO 安华高	AVAGO
1N5711	15mA Axial Leaded Schottky Barrier Diodes Features ● For general purpose applications ● Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switc	SUNMATE 森美特	SUNMATE
1N5711	SMALL SIGNAL SCHOTTKY DIODES VOLTAGE RANGE: 70V POWER DISSIPATION: 400 mW FEATURES ◇ For general purpose applications ◇ fast switching and low logic level applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching m ake it i	BILIN 银河微电	BILIN
1N5711	SCHOTTKY BARRIER DIODES • 1N5711-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/444 • 1N5712-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/445 • SCHOTTKY BARRIER DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED	CDI-DIODE	CDI-DIODE
1N5711	400 mWatt Small Signal Schottky Diode 60 to 70 Volts Features • High Reverse Breakdown Voltage • Low Forward Voltage Drop • For General Purpose Application	CHENYI 商朗电子	CHENYI
1N5711	Schottky Diodes Features • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low for ward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast swit	GE	GE
1N5711	SMALL SIGNAL SCHOTTKY DIODES FEATURES • For general purpose applications • Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast	JINANJINGHENG 晶恒集团	JINANJINGHENG
1N5711	Schottky Barrier Diodes for General Purpose Applications Description/Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
1N5711	SCHOTTKY BARRIER DIODES VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diode	SYNSEMI	SYNSEMI
1N5711	Small Signal Schottky Diodes VOLTAGE RANGE: 70V POWER DISSIPATION: 400 mW Features ◇ For general purpose applications ◇ fast switching and low logic level applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching m ake it i	LUGUANG 鲁光电子	LUGUANG
1N5711	70V 15mA Schottky Diode Features: Picose cond switching speed Low forward voltage drop 70V breakdown voltage Guard-Ring for over-voltage protection High reliability tested grades & matched characteristic options.	SS	SS
1N5711	SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. Matched batches are available on request.	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
1N5711	SCHOTTKY DIODES SCHOTTKY DIODES • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices.	DIGITRON	DIGITRON
1N5711	SMALL SIGNAL SCHOTTKY DIODES VOLTAGE RANGE: 70V POWER DISSIPATION: 400 mW FEATURES ◇ For general purpose applications ◇ fast switching and low logic level applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching m ake it i	DSK	DSK
1N5711	SMALL SIGNAL SCHOTTKY DIODES FEATURES • For general purpose applications • Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast	JINGHENG 晶恒	JINGHENG
1N5711	Schottky Barrier Diodes for General Purpose Applications Description The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D conv	HP 安捷伦	HP
1N5711	SMALL SIGNAL SCHOTTKY DIODES FEATURES For general purpose applications fast switching and low logic level applications Metal s ilicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and co	SAMYANG 三阳电子	SAMYANG
1N5711	70 V、15 mA RF和超高速开关信号肖特基二极管 Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching.\n\n Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. Matched batches are available on request	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
1N5711	SCHOTTKY BARRIER SWITCHING DIODE 文件：273.845 Kbytes Page：2 Pages	SUNMATE 森美特 PDF上传者：深圳冠荣电子有限公司	SUNMATE
1N5711	SMALL SIGNAL SCHOTTKY DIODE 文件：46.64 Kbytes Page：3 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
1N5711	封装/外壳：DO-204AH，DO-35，轴向包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：SCHOTTKY DIODE 分立半导体产品二极管 - 整流器 - 单	MICROCHIP 微芯科技	MICROCHIP
1N5711	封装/外壳：DO-204AH，DO-35，轴向包装：卷带（TR）描述：RF DIODE SCHOTTKY 70V 250MW 分立半导体产品二极管 - 射频	BOARDCOM 博通	BOARDCOM
1N5711	SCHOTTKY BARRIER SWITCHING DIODE	DIODES 美台半导体	DIODES
1N5711-1	SCHOTTKY BARRIER DIODES SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT Qualified per MIL-PRF-19500/444	MICROSEMI 美高森美	MICROSEMI
1N5711-1	SCHOTTKY BARRIER DIODES DESCRIPTION This Schottky barrier diode is metallurgically bonded and offers military grade qualifications for high-reliability applications on “1N” prefixed numbers. This small diode is hermetically sealed and bonded into a DO-35 glass package. FEATURES • JEDEC registered 1N5711-1, 1N5712-1, 1	MICROSEMI 美高森美	MICROSEMI
1N5711-1	SWITCHING DIODE SWITCHING DIODE 1N5711-1, 1N5711US-1 • Hermetic, non-cavity glass package • Metallurgically bonded • Physical dimensions: Axial lead similar to DO-35 and surface mount similar to D-5D	SENSITRON	SENSITRON
1N5711-1	SCHOTTKY BARRIER DIODES • 1N5711-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/444 • 1N5712-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/445 • SCHOTTKY BARRIER DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED	CDI-DIODE	CDI-DIODE
1N5711CSM	SCHOTTKY BARRIER DIODE SCHOTTKY DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS	TTELEC	TTELEC
1N5711UB	SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT Qualified per MIL-PRF-19500/444	MICROSEMI 美高森美	MICROSEMI
1N5711UBCA	SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT Qualified per MIL-PRF-19500/444	MICROSEMI 美高森美	MICROSEMI
1N5711UBCC	SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT Qualified per MIL-PRF-19500/444	MICROSEMI 美高森美	MICROSEMI
1N5711UBD	SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT Qualified per MIL-PRF-19500/444	MICROSEMI 美高森美	MICROSEMI
1N5711UR-1	SCHOTTKY BARRIER DIODES SCHOTTKY BARRIER DIODES – LEADLESS PACKAGE FOR SURFACE MOUNT – METALLURGICALLY BONDED – DOUBLE PLUG CONSTRUCTION Qualified per MIL-PRF-19500/444	MICROSEMI 美高森美	MICROSEMI
1N5711UR-1	SCHOTTKY BARRIER DIODES • 1N5711UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS PER MIL-PRF-19500/444 • 1N5712UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS PER MIL-PRF 19500/445 • SCHOTTKY BARRIER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION	CDI-DIODE	CDI-DIODE
1N5711US-1	SWITCHING DIODE SWITCHING DIODE 1N5711-1, 1N5711US-1 • Hermetic, non-cavity glass package • Metallurgically bonded • Physical dimensions: Axial lead similar to DO-35 and surface mount similar to D-5D	SENSITRON	SENSITRON
1N5711W	SURFACE MOUNT SCHOTTKY BARRIER DIODE Low Forward Voltage Drop Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0	WTE Won-Top Electronics	WTE
1N5711W	Surface mount schottky barrier diode FEATURES ● Low Forward Voltage Drop. ● Guard Ring Construction for Transient Protection. ● Fast Switching Time. ● Low Reverse Capacitance. ● Surface Mount Package Ideally Suited for Automatic Insertion. APPLICATIONS ● Surface mount fast switching schottky diode.	BILIN 银河微电	BILIN
1N5711W	SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Fast Switching Time ● Low Reverse Capacitance	SUNMATE 森美特	SUNMATE
1N5711W	Surface Mount Schottky Barrier Diode Voltage Range 70 Volts 250m Watts Power Dissipation Features ◇ Low forward voltage drop ◇ Guard Ring Construction for Transient Protection ◇ Fast switching time ◇ Low Reverse Capacitance ◇ Surface mount package ideally suited for automatic insertion	TSC 台湾半导体	TSC
1N5711W	SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance • Surface Mount Package Ideally Suited for Automatic Insertion • Lead Free/RoHS Compliant (Note 3)	DIODES 美台半导体	DIODES
1N5711W	SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance • Surface Mount Package Ideally Suited for Automatic Insertion • Lead Free/RoHS Compliant (Note 3)	DIODES 美台半导体	DIODES
1N5711W	Surface Mount Schottky Barrier Diode Voltage Range 70 Volts 250m Watts Power Dissipation Features ◇ Low forward voltage drop ◇ Guard Ring Construction for Transient Protection ◇ Fast switching time ◇ Low Reverse Capacitance ◇ Surface mount package ideally suited for automatic insertion	LUGUANG 鲁光电子	LUGUANG
1N5711W	Surface mount schottky barrier diode FEATURES ● Low Forward Voltage Drop. ● Guard Ring Construction for Transient Protection. ● Fast Switching Time. ● Low Reverse Capacitance. ● Surface Mount Package Ideally Suited for Automatic Insertion. APPLICATIONS ● Surface mount fast switching schottky diode.	DSK	DSK
1N5711W	Low Forward Voltage Drop Features ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Fast Switching Time ● Low Reverse Capacitance ● Surface Mount Package Ideally Suited for Automatic Insertion	WINNERJOIN 永而佳	WINNERJOIN
1N5711W_	SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance • Surface Mount Package Ideally Suited for Automatic Insertion • Lead Free/RoHS Compliant (Note 3)	DIODES 美台半导体	DIODES
1N5711W-7-F	SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance • Surface Mount Package Ideally Suited for Automatic Insertion • Lead Free/RoHS Compliant (Note 3)	DIODES 美台半导体	DIODES
1N5711W-7-F	Surface Mount Schottky Barrier Diode Features: • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance. • Surface Mount Package Ideally Suited for Automatic Insertion Applications: • Surface mount fast switching Schottky diode Description Surface Mount	MULTICOMP 易络盟	MULTICOMP
1N5711WS	SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Speed • Low Capacitance • Surface Mount Package Ideally Suited for Automated Insertion • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 3 and 4)	DIODES 美台半导体	DIODES
1N5711WS	SURFACE MOUNT SCHOTTKY BARRIER DIODES Features ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Fast Switching Speed ● Low Capacitance ● Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data ● Case: SOD-323, Molded Plastic ● Terminals: Plated Leads Solderable per MIL-STD-20	SUNMATE 森美特	SUNMATE
1N5711WS	SURFACE MOUNT SCHOTTKY BARIER DIODE Features ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Prote ● Fast Switching Speed ● Low Capacitance ● Surface Mount Package ldeally Suited for Automatic Insertion	KEXIN 科信电子	KEXIN
1N5711WS	Low Forward Voltage Drop Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance • Surface Mount Package Ideally Suited for Automatic Insertion	WINNERJOIN 永而佳	WINNERJOIN

1N5711产品属性

类型
描述
Number of Diodes_spec：
1
Marketing Status：
Active
Repetitive Peak Reverse Voltage_max(V)：
70
Average Rectified Current_max(A)：
0.015
VF_max(V)：
1
Reverse Current_max(mA)：
0.02
Junction Capacitance_max(pF)：
2
Reverse Recovery Time_max(ns)：
0.1
Junction Temperature_max(°C)：
200
General Description：
70 V

1N5711供应商更多...

更新时间：2026-5-15 18:39:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	1N5711W-7-F	DIODES/美台	25+	SOD-123	37496	DIODES/美台全新特价1N5711W-7-F即刻询购立享优惠#长期有货	询价
深圳市豪迈兴电子有限公司	1N5711	STM	24+	N/A	5642	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市振宏微科技有限公司	1N5711	SMD	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市达恩科技有限公司	1N5711	ST	24+		1628	进口原装正品优势供应	询价
深圳市科恒伟业电子有限公司	1N5711	ST	23+	二极管	6850	只做原装正品假一赔十为客户做到零风险!!	询价
标准国际(香港)有限公司	1N5711	GSI	25+		500	公司优势库存热卖中!	询价
深圳市威雅利发展有限公司	1N5711	DIODES	20+	N/A	1900	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
千层芯半导体(深圳)有限公司	1N5711	AGILENT	24+	SMD	33547	长期供应原装现货实单可谈	询价
深圳市正纳电子有限公司	1N5711	ST(意法)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市恒凯威科技开发有限公司	1N5711	ST/意法半导体	21+	DO-35	10000	只做原装,质量保证	询价

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找IC，尽在114IC

1N5711价格

1N5711产品属性

1N5711供应商更多...

1N5711芯片相关品牌

1N5711规格书下载地址

1N5711参数引脚图相关

1N5711数据表相关新闻

1N5819W

1N5819HW-7-F

1N5401

1N5822

1N5400TR，1SMA22CAT3G，2114-250A/225K，2322640兴中扬电子科技

1N5353B，专业军工IC，军工电子元器件销售，兴中扬电子，航空IC

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