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位置：首页 > IC中文资料第1423页 > 1N5712

型号 功能描述 生产厂家&企业 LOGO 操作
1N5712

SchottkyBarrierDiodesforGeneralPurposeApplications

Description The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcost glasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logorA-Dconv

HPAgilent(Hewlett-Packard)

安捷伦科技安捷伦科技有限公司

HP
1N5712

SMALLSIGNALSCHOTTKYDIODES

FEATURES ◇Metal-to-siliconjunction ◇Highbreakdownvoltage ◇Lowturn-onvoltage ◇Ultrafastswitchingspeed ◇PrmarlyintendedforhighlevelUHF/VHFdetectionandpulseapplicationswithbroaddynamicrange

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
1N5712

SMALLSIGNALSCHOTTKYDIODES

FEATURES •Metal-on-siliconjunction •Highbreakdownvoltage •Lowturn-onvoltage •Ultrafastswitchingspeed •PrimarilyintendedforhighlevelUHF/VHFdetectionandpulseapplicationswithbroaddynamicrange •ThediodeisalsoavailableintheMiniMELFcasewithtypedesignationLL5

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集团济南晶恒电子有限责任公司

JINANJINGHENG
1N5712

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5712

SchottkyBarrierDiodesforGeneralPurposeApplications

Description/Applications The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcostglasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N5712

SCHOTTKYDIODES

SCHOTTKYDIODES •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltagedrop andfastswitchingmakeitidealforprotectionofMOSdevices.

DIGITRON

Digitron Semiconductors

DIGITRON
1N5712

SMALLSIGNALSCHOTTKYDIODES

Features ●Metal-to-siliconjunction ●Highbreakdownvoltage ●Lowturn-onvoltage ●Ultrafastswitchingspeed

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
1N5712

PicoSecondSwitchingSpeed

Description/Applications The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcostglasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logor

AVAGOAVAGO TECHNOLOGIES LIMITED

安华高

AVAGO
1N5712

SMALLSIGNALSCHOTTKYDIODES

FEATURES ◇Metal-to-siliconjunction ◇Highbreakdownvoltage ◇Lowturn-onvoltage ◇Ultrafastswitchingspeed ◇PrmarlyintendedforhighlevelUHF/VHFdetectionandpulseapplicationswithbroaddynamicrange

DSK

Diode Semiconductor Korea

DSK
1N5712

SmallSignalSchottkyDiodes

Features ◇Metal-to-siliconjunction ◇Highbreakdownvoltage ◇Lowturn-onvoltage ◇Ultrafastswitchingspeed ◇PrmarlyintendedforhighlevelUHF/VHFdetectionandpulseapplicationswithbroaddynamicrange

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
1N5712

SMALLSIGNALSCHOTTKYDIODES

SMALLSIGNALSCHOTTKYDIODES FEATURES ◇Metal-to-siliconjunction ◇Highbreakdownvoltage ◇Lowturn-onvoltage ◇Ultrafastswitchingspeed ◇PrmarlyintendedforhighlevelUHF/VHFdetectionandpulseapplicationswithbroaddynamicrange

KISEMICONDUCTOR

Kwang Myoung I.S. CO.,LTD

KISEMICONDUCTOR
1N5712

SMALLSIGNALSCHOTTKYDIODES

FEATURES •Metal-on-siliconjunction •Highbreakdownvoltage •Lowturn-onvoltage •Ultrafastswitchingspeed •PrimarilyintendedforhighlevelUHF/VHFdetectionandpulseapplicationswithbroaddynamicrange •ThediodeisalsoavailableintheMiniMELFcasewithtypedesignationLL5

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒济南晶恒电子有限责任公司

JINGHENG
1N5712

GeneralPurposeAxialLeadGlassPackagedSchottkyDiodes

DescriptionandApplications Thesesilicondiodesarepackagedinahermeticaxialleadglasspackage.Varioususesincludedetecting,mixingandswitchingatlowpowerlevels.Theyaresuitableforcommercialswitchingalongwithcontrolfunctionsinnarrowbandreceivers.Thesediodescanalso

MA-COM

M/A-COM Technology Solutions, Inc.

MA-COM
1N5712

SMALLSINGALSCHOTTKYDIODES

FEATURES •Metal-on-siliconjunction •Highbreakdownvoltage •Lowturn-onvoltage •Ultrafastswitchingspeed •PrimarilyintendedforhighlevelUHF/VHFdetectionandpulseapplicationswithbroaddynamicrange •ThediodeisalsoavailableintheMiniMELFcasewithtypedesignationLL5

GXELECTRONICSShandong Xinghe Minghui Electronics Co., Ltd

星合电子山东星合明辉电子有限公司

GXELECTRONICS
1N5712

SMALLSIGNALSCHOTTKYDIODES

FEATURES Metal-to-siliconjunction andpulseapplicationswithbroaddynamicrange Highbreakdownvoltage Lowturn-onvoltage Ultrafastswitchingspeed PrmarlyintendedforhighlevelUHF/VHFdetection

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

三阳电子三阳电子有限公司

SAMYANG
1N5712

20VDetectionswitchtube

文件：543.771 Kbytes Page：3 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者：深圳冠荣电子有限公司

SUNMATE
1N5712

SMALLSIGNALSCHOTTKYDIODES

文件：543.771 Kbytes Page：3 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者：深圳冠荣电子有限公司

SUNMATE
1N5712

封装/外壳：DO-204AH，DO-35，轴向 包装：管件 描述：DIODE SCHOTTKY 20V 75MA DO35 分立半导体产品 二极管 - 整流器 - 单

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip
1N5712

封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR） 描述：RF DIODE SCHOTTKY 20V 250MW 分立半导体产品 二极管 - 射频

ETC

知名厂家

1N5712-1

SCHOTTKYBARRIERDIODES

•1N5711-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/444 •1N5712-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/445 •SCHOTTKYBARRIERDIODES •HERMETICALLYSEALED •METALLURGICALLYBONDED

CDI-DIODE

Compensated Deuices Incorporated

CDI-DIODE
1N5712-1

SCHOTTKYBARRIERDIODES

DESCRIPTION ThisSchottkybarrierdiodeismetallurgicallybondedandoffersmilitarygradequalificationsforhigh-reliabilityapplicationson“1N”prefixednumbers.ThissmalldiodeishermeticallysealedandbondedintoaDO-35glasspackage. FEATURES •JEDECregistered1N5711-1,1N5712-1,1

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5712-1

SCHOTTKYBARRIERDIODES

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5712-1JANTX

SchottkyBarrierDiodeQualifiedperMIL-PRF-19500/444

DESCRIPTION ThisSchottkybarrierdiodeismetallurgicallybondedandoffersmilitarygradequalificationsforhigh-reliabilityapplicationson“1N”prefixednumbers.ThissmalldiodeishermeticallysealedandbondedintoaDO-35glasspackage. FEATURES •JEDECregistered1N5711-1,1N5712-1,1

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5712UB

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5712UBCA

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5712UBCC

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5712UBD

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5712UR-1

SCHOTTKYBARRIERDIODES

•1N5711UR-1AVAILABLEINJAN,JANTX,JANTXVandJANSPERMIL-PRF-19500/444 •1N5712UR-1AVAILABLEINJAN,JANTX,JANTXVandJANSPERMIL-PRF19500/445 •SCHOTTKYBARRIERDIODES •LEADLESSPACKAGEFORSURFACEMOUNT •METALLURGICALLYBONDED,DOUBLEPLUGCONSTRUCTION

CDI-DIODE

Compensated Deuices Incorporated

CDI-DIODE
1N5712UR-1

SCHOTTKYBARRIERDIODES

SCHOTTKYBARRIERDIODES –LEADLESSPACKAGEFORSURFACEMOUNT –METALLURGICALLYBONDED –DOUBLEPLUGCONSTRUCTION QualifiedperMIL-PRF-19500/444

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5712UR-1

SCHOTTKYBARRIERDIODES

文件：83.58 Kbytes Page：3 Pages

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

1N5712产品属性

  • 类型

    描述

  • 型号

    1N5712

  • 功能描述

    肖特基二极管与整流器 20 VBR 1.2 pF

  • RoHS

    否

  • 制造商

    Skyworks Solutions, Inc.

  • 产品

    Schottky Diodes

  • 峰值反向电压

    2 V

  • 正向连续电流

    50 mA

  • 配置

    Crossover Quad

  • 正向电压下降

    370 mV

  • 最大功率耗散

    75 mW

  • 工作温度范围

    - 65 C to + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-143

  • 封装

    Reel

1N5712供应商更多...

更新时间：2025-8-1 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
1N5712
MICROCHIP(美国微芯)
24+
DO35(DO204AH)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
深圳市威雅利发展有限公司
1N5712
ST
2113
DO-35
9000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市金宏图电子科技有限公司
1N5712
Microchip Technology
2025
2519
全新、原装
询价
千层芯半导体(深圳)有限公司
1N5712
M/A-COM
24+
SMD
5500
M/A-COM专营品牌绝对进口原装假一赔十
询价
深圳市明嘉莱科技有限公司
1N5712-1
MICROSEMI/美高森美
25+
NA
880000
明嘉莱只做原装正品现货
询价
深圳市振宏微科技有限公司
1N5712.TR
FAIRCHILD
23+
480
专做原装正品,假一罚百!
询价
富凯科技(深圳）有限公司
1N5712
Broadcom Limited
24+
DO-204AH,DO-35,轴向
6000
只做原装，欢迎询价，量大价优
询价
标准国际(香港)有限公司
1N5712
HP
9942
11
公司优势库存 热卖中!
询价
深圳市赛美科科技有限公司
1N5712
M/A-COM
NA
5500
一级代理 原装正品假一罚十价格优势长期供货
询价
深圳市金嘉锐电子有限公司
1N5712
Avago
2025+
DO-35
32560
原装优势绝对有货
询价

1N5712芯片相关品牌

  • ADAM-TECH
  • ECS
  • EDAC
  • grayhill
  • Intel
  • KODENSHI
  • MEDER
  • MPD
  • RENCO
  • SEI
  • TAI-SAW
  • ZFSWITCHES

1N5712规格书下载地址

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1N5712数据表相关新闻

DdatasheetPDF页码索引

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