位置：首页 > IC中文资料第8405页 > 1N5525BUR
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1N5525BUR | LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | Microsemi 美高森美 |   | |
1N5525BUR | Low Voltage Surface Mount 500 mW Avalanche Diodes • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | Microsemi 美高森美 | | |
1N5525BUR | 0.5W 6.2V 5% Zener Diode | DIGITRON | | |
Low Voltage Avalanche 500 mW Zener Diodes DO-35 FEATURES • LOW ZENER NOISE SPECIFIED • LOW ZENER IMPEDANCE • LOW LEAKAGE CURRENT • HERMETICALLY SEALED GLASS PACKAGE • JAN/JANTX/JANTXV AVAILIBLE ON 1N5518-1 TROUGH 1N5546-1 PER MIL-S-19500/437 | Microsemi 美高森美 | | ||
0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package | JGD 固锝电子 | | ||
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE 1. Package Style DO-7 2. Suffix denotes Vz tolerance: non suffix ±20, A suffix ±10: Ir @ Vr1, Vz, + Vf only. Suffix B ±5: Ir @ Vr2, Vz, DVz, Vf, ND. 3. Measured with 10, 60 Hz AC superimposed on Izt. 4. Measured from | KNOX | | ||
LOW VOLTAGE AVALANCHE DIODES DO-35 FEATURES • LOW ZENER NOISE SPECIFIED • LOW ZENER IMPEDANCE • LOW LEAKAGE CURRENT • HERMETICALLY SEALED GLASS PACKAGE • JAN/JANTX/JANTXV AVAILIBLE ON 1N5518-1 TROUGH 1N5546-1 PER MIL-S-19500/437 | Microsemi 美高森美 | | ||
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | Microsemi 美高森美 | | ||
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | Microsemi 美高森美 | | ||
ZENER DIODE, 500mW 文件：111.15 Kbytes Page：2 Pages | Microsemi 美高森美 | | ||
Zener Diodes | Microchip 微芯科技 | | ||
封装/外壳：DO-213AA 包装：卷带（TR） 描述：ZENER DIODE 分立半导体产品 二极管 - 齐纳 - 单 | Microchip 微芯科技 | | ||
封装/外壳：DO-213AA 包装：卷带（TR） 描述：VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单 | Microchip 微芯科技 | |
1N5525BUR产品属性
- 类型
描述
- 型号
1N5525BUR
- 制造商
MICROSEMI
- 制造商全称
Microsemi Corporation
- 功能描述
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROSEMI/美高森美 |
24+ |
SMD |
37935 |
郑重承诺只做原装进口现货 |
|||
1N5526A |
25+ |
6 |
6 |
||||
MICROCHIP(美国微芯) |
24+ |
DO213AA |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
MROSEMI/美高森美 |
24+ |
NA/ |
1197 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
MSC |
25+ |
190 |
公司现货 |
||||
MICROSEMI/美高森美 |
21+ |
NA |
1569 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
MICROSEMI |
24+ |
SMD |
1680 |
MICROSEMI专营品牌进口原装现货假一赔十 |
|||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
MICROCHIP/微芯 |
25+ |
SMD |
32360 |
MICROCHIP/微芯全新特价1N5525BUR-1即刻询购立享优惠#长期有货 |
|||
MICROSEMI/美高森美 |
21+ |
SMD |
120000 |
长期代理优势供应 |
1N5525BUR芯片相关品牌
1N5525BUR规格书下载地址
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1N5525BUR数据表相关新闻
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DdatasheetPDF页码索引
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