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位置：首页 > IC中文资料第6345页 > 1N5525

型号 功能描述 生产厂家&企业 LOGO 操作
1N5525

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

JGD
1N5525

LOWVOLTAGEAVALANCHEZENERDIODESHIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE

LOWVOLTAGEAVALANCHEZENERDIODES HIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE 1.PackageStyleDO-7 2.SuffixdenotesVztolerance:nonsuffix±20,Asuffix±10:Ir@Vr1,Vz,+Vfonly.SuffixB±5:Ir@Vr2,Vz,DVz,Vf,ND. 3.Measuredwith10,60HzACsuperimposedonIzt. 4.Measuredfrom

KNOXKnox Semiconductor, Inc

Knox Semiconductor, Inc

KNOX
1N5525

LOWVOLTAGEAVALANCHEDIODESDO-35

FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5525

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5525

LowVoltageAvalanche500mWZenerDiodesDO-35

FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5525

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N5525

封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR） 描述：VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单

MicrochipMicrochip Technology Inc.

微芯科技微芯科技股份有限公司

Microchip
1N5525-1

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5525A

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

JGD
1N5525A

LOWVOLTAGEAVALANCHESSILICONOXIDEPASSIVATEDZENERREGULATORDIODES

LOWVOLTAGEAVALANCHESSILICONOXIDEPASSIVATEDZENERREGULATORDIODES LOWVOLTAGEAVALANCHEZENERDIODES 400MILLIWATTS 3.3THRU33VOLTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N5525A

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5525A-1

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5525AUR

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5525AUR-1

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5525B

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5525B

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

JGD
1N5525B

LOWREVERSELEAKAGECHARACTERISTICS

•1N5518-1THRU1N5546B-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •LOWREVERSELEAKAGECHARACTERISTICS •LOWNOISECHARACTERISTICS •DOUBLEPLUGCONSTRUCTION •METALLURGICALLYBONDED

CDI-DIODE

Compensated Deuices Incorporated

CDI-DIODE
1N5525B-1

LOWREVERSELEAKAGECHARACTERISTICS

•1N5518-1THRU1N5546B-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •LOWREVERSELEAKAGECHARACTERISTICS •LOWNOISECHARACTERISTICS •DOUBLEPLUGCONSTRUCTION •METALLURGICALLYBONDED

CDI-DIODE

Compensated Deuices Incorporated

CDI-DIODE
1N5525B-1

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5525BUR

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5525BUR

LowVoltageSurfaceMount500mWAvalancheDiodes

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5525BUR-1

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5525C

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5525C

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

JGD
1N5525C-1

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5525CUR

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5525CUR

LowVoltageSurfaceMount500mWAvalancheDiodes

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5525CUR-1

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5525D

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

JGD
1N5525D

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5525D

REF/REGDIODE

Description:Ref/RegDiode,250mW

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N5525D-1

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5525DUR

LowVoltageSurfaceMount500mWAvalancheDiodes

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5525DUR

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5525DUR-1

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5525UR

LowVoltageSurfaceMount500mWAvalancheDiodes

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5525UR

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5525UR-1

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5525A

封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR） 描述：VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单

MicrochipMicrochip Technology Inc.

微芯科技微芯科技股份有限公司

Microchip
1N5525B

LOWREVERSELEAKAGECHARACTERISTICS

文件：114.68 Kbytes Page：2 Pages

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5525BUR-1

ZENERDIODE,500mW

文件：111.15 Kbytes Page：2 Pages

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

1N5525产品属性

  • 类型

    描述

  • 型号

    1N5525

  • 制造商

    MICROSEMI

  • 制造商全称

    Microsemi Corporation

  • 功能描述

    Low Voltage Avalanche 500 mW Zener Diodes DO-35

1N5525供应商更多...

更新时间：2024-5-27 18:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市和悦电子贸易有限公司
1N5525BUR-1
MICROSEM
756
询价
深圳市永贝尔科技有限公司
1N5525B
CDI-DIODE
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
千层芯半导体(深圳)有限公司
1N5525BUR-1JANTX
MICROSEMI
2018+
SMD
1680
MICROSEMI专营品牌进口原装现货假一赔十
询价
深圳市高捷芯城科技有限公司
1N5525D
MICROCHIP(美国微芯)
23+
DO35
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
深圳市得捷芯城科技有限公司
1N5525BUR-1
MROSEMI/美高森美
23+
NA/
1197
优势代理渠道,原装正品,可全系列订货开增值税票
询价
标准国际(香港)有限公司
1N5525B
MOT
N/A
80
询价
深圳市惊羽科技有限公司
1N5525B(DO35)
MICROCHIP-微芯
24+25+/26+27+
DO-35-2
9328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
深圳市向鸿伟业电子有限公司
1N5525BUR-1
MICROSEMI/美高森美
22++
SMD
5209
原装正品!诚信经营,实单价优!
询价
深圳市云美电子科技有限公司
1N5525BUR-1
MICROSEMI/美高森美
22+
SMD
37240
只做原装正品现货
询价
深圳市东来宝电子科技有限公司
1N5525BUR-1
MICROSEMI/美高森美
22+
SMD
25502
郑重承诺只做原装进口现货
询价

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