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1N52A

GOLD BONDED GERMANIUM DIODE

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

1N52A

GOLD BOUNDED GERMANUM DIODE

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

ZENER DIODES

FEATURE ♦ Low zener impedance ♦ Low regulation factor ♦ Glass passivated junction ♦ High temperature soldering guaranteed: 260 °C/10S/9.5mm lead length at 5 lbs tension

SY

顺烨电子

Zener Diodes

■ Features ● Ptot 500mW ● Vz 2.4V-68V ■ Applications ● Stabilizing Voltage

YANGJIE

扬杰电子

ZENER DIODES

1N52 SERIES ZENER DIODES 1N5221B Through 1N5272B ELECTRICAL CHARACTERISTICS (T A =25°C)unless otherwise noted.Based on dc measurements at thermal equillibrium;lead length=3/8”;thermal resistance of heat sink=30°C/W VFmax=1.1V @ I F=200mA for all types(T A = 25°C VFmax=1.1V@ I F=200mA)

LRC

乐山无线电

High stability and high reliability

Features • Low reverse leakage • Low zener impedance • Maximum power dissipation of 500 mW • High stability and high reliability • Lead and body according with RoHS standard

DACHANG

大昌电子

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance. Intended for use in Compact Fluorescent Lights

PHILIPS

飞利浦

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