High Conductance Fast Diode

General Description The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode. Features • 500 milliwatt Power Dissipation package. • Fast Switching Spee

TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES

VOLTAGE RANGE -50 to 100 Volts CURRENT - 0.075 to 0.2 Ampere FEATURES * Silicon epitaxial planar diodes * Low leakage * Low forward voltage * High speed switching * High current capability * High reliability * Low power loss, high efficiency

SMALL SIGNAL SWITCHING DIODE

FEATURES • Silicon epitaxial planar diode • Fast swithching diodes • 1N4149, 1N4447, 1N4449 are also avaible in glass case DO-34

SILICON EPITAXIAL PLANAR DIODES

Features Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34.

FAST SWITCHING DIODE

Features ● Fast Switching Speed ● Suitable for General Logic Applications ● High Conductance ● Available in Surface Mount Version (LL4154)